NTMFS4847N

Power MOSFET
30 V, 85 A, Single N−Channel, SO−8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses http://onsemi.com
• Thermally Enhanced SO−8 Package
• These are Pb−Free Devices
V(BR)DSS RDS(ON) MAX ID MAX
Applications
• Refer to Application Note AND8195/D 4.1 mW @ 10 V
30 V 85 A
• CPU Power Delivery 6.2 mW @ 4.5 V
• DC−DC Converters
• Low Side Switching
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±16 V G (4)

Continuous Drain TA = 25°C ID 18 A

Current RqJA S (1,2,3)
(Note 1) TA = 85°C 13
Power Dissipation TA = 25°C PD 2.21 W N−CHANNEL MOSFET
RqJA (Note 1)
Continuous Drain TA = 25°C ID 29.5 A MARKING
Current RqJA v
10 sec TA = 85°C 21 DIAGRAM
Power Dissipation TA = 25°C PD 5.8 W D
RqJA, t v 10 sec Steady S D
1 4847N
Continuous Drain State TA = 25°C ID 11.5 A S
SO−8 FLAT LEAD S AYWZZ
Current RqJA
(Note 2) TA = 85°C 8.2 CASE 488AA G D
STYLE 1 D
Power Dissipation TA = 25°C PD 0.88 W
RqJA (Note 2)
A = Assembly Location
Continuous Drain TC = 25°C ID 85 A Y = Year
Current RqJC
TC = 85°C 61 W = Work Week
(Note 1)
ZZ = Lot Traceability
Power Dissipation TC = 25°C PD 48.1 W
RqJC (Note 1)
Pulsed Drain tp=10ms TA = 25°C IDM 170 A
Current ORDERING INFORMATION
Current limited by package TA = 25°C IDmaxpkg 100 A
Device Package Shipping†
Operating Junction and Storage TJ, −55 to °C
Temperature TSTG +150 NTMFS4847NT1G SO−8FL 1500 /
Source Current (Body Diode) IS 48 A (Pb−Free) Tape & Reel
Drain to Source dV/dt dV/dt 6 V/ns NTMFS4847NT3G SO−8FL 5000 /
Single Pulse Drain−to−Source Avalanche EAS 163 mJ (Pb−Free) Tape & Reel
Energy (VDD = 50 V, VGS = 10 V,
IL = 33 Apk, L = 0.3 mH, RG = 25 W) †For information on tape and reel specifications,
including part orientation and tape sizes, please
Lead Temperature for Soldering Purposes TL 260 °C refer to our Tape and Reel Packaging Specifications
(1/8” from case for 10 s) Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

May, 2012 − Rev. 3 NTMFS4847N/D
 NTMFS4847N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 2.6
Junction−to−Ambient – Steady State (Note 1) RqJA 56.6
°C/W
Junction−to−Ambient – Steady State (Note 2) RqJA 142
Junction−to−Ambient − t v 10 sec RqJA 21.6
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain−to−Source Breakdown Voltage V(BR)DSS/ 25
mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25 °C 1
VDS = 24 V mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±16 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.45 1.8 2.5 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.2 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V to ID = 30 A 3.2 4.1
11.5 V
ID = 15 A 3.2
mW
VGS = 4.5 V ID = 30 A 5.0 6.2
ID = 15 A 5.0
Forward Transconductance gFS VDS = 1.5 V, ID = 30 A 74 S
CHARGES AND CAPACITANCES
Input Capacitance CISS 2614
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 12 V 466 pF
Reverse Transfer Capacitance CRSS 241
Total Gate Charge QG(TOT) 19.2 28
Threshold Gate Charge QG(TH) 1.6
VGS = 4.5 V, VDS = 15 V; ID = 30 A nC
Gate−to−Source Charge QGS 7.3
Gate−to−Drain Charge QGD 6.1
Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V, 43.8
nC
ID = 30 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time td(ON) 17.7
Rise Time tr VGS = 4.5 V, VDS = 15 V, ID = 15 A, 53
ns
Turn−Off Delay Time td(OFF) RG = 3.0 W 21
Fall Time tf 8.7
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4847N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(ON) 10.5
Rise Time tr VGS = 11.5 V, VDS = 15 V, 20.8
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 28.1
Fall Time tf 6.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.8 1.0
V
IS = 30 A TJ = 125°C 0.7
Reverse Recovery Time tRR 15.4
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 8.2 ns
Discharge Time tb IS = 30 A 7.2
Reverse Recovery Charge QRR 6.0 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 0.93 nH
Drain Inductance LD 0.005
TA = 25°C
Gate Inductance LG 1.84
Gate Resistance RG 0.9 W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

110 120
10V 5.0 V TJ = 25°C 110
100 VDS ≥ 10 V
4.5 V 3.8 V 100
90
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

80 4.2 V 90
3.6 V 80
70
4.0 V 70
60
3.4 V 60
50
50
40
3.2 V 40
30 TJ = 125°C
30
20 20
3.0 V TJ = 25°C
10 10
2.8 V TJ = −55°C
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

TYPICAL CHARACTERISTICS

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 NTMFS4847N

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.040 0.008
ID = 30 A TJ = 25°C
0.035
TJ = 25°C 0.007
0.030
0.006
0.025 VGS = 4.5 V

0.020 0.005

0.015 0.004
0.010 VGS = 11.5 V
0.003
0.005
0 0.002
2 3 4 5 6 7 8 9 10 11 30 40 50 60 70 80 90 100 110 120
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage

1.8 10,000
ID = 30 A VGS = 0 V
VGS = 10 V
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

1.6
IDSS, LEAKAGE (nA)
1.4 TJ = 150°C

1.2 1000

1.0

0.8
TJ = 125°C
0.6 100
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

3200 12
VGS, GATE−TO−SOURCE VOLTAGE (V)

Ciss QT
TJ = 25°C 11
2800
10
VGS
C, CAPACITANCE (pF)

2400 9
8
2000
7
1600 6
5
1200 Qgs Qgd
Coss 4
800 3
Crss 2 ID = 30 A
400
1 TJ = 25°C
0 0
0 4 8 12 16 20 24 28 32 0 4 8 12 16 20 24 28 32 36 40 44
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

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 NTMFS4847N

TYPICAL CHARACTERISTICS

1000 30
VDS = 15 V VGS = 0 V
ID = 15 A 25 TJ = 25°C

IS, SOURCE CURRENT (A)

VGS = 11.5 V tf
td(off)
100 20
tr
t, TIME (ns)

15
td(on)
10 10

1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance

1000 180

SOURCE AVALANCHE ENERGY (mJ)

ID = 33 A
EAS, SINGLE PULSE DRAIN−TO−
160
140
ID, DRAIN CURRENT (A)

100 10 ms
120
100 ms 100
10
1 ms 80
VGS = 20 V
Single Pulse 10 ms 60
TC = 25°C dc
1
RDS(on) Limit 40
Thermal Limit 20
Package Limit
0.1 0
0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

140 100

120

100

80 125°C 100°C 25°C

gFS (S)

Id (A)

10
60

40

20
VDS = 1.5 V
0 1
0 15 30 45 60 75 90 105 120 1 10 100 1000 10,000
DRAIN CURRENT (A) PULSE WIDTH (ms)
Figure 13. gFS vs. Drain Current Figure 14. Id vs. Pulse Width

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 NTMFS4847N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)
CASE 488AA
ISSUE G
2X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B BURRS.
2X
D1 MILLIMETERS
0.20 C DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
4X b 0.33 0.41 0.51
E1 q c 0.23 0.28 0.33
E D 5.15 BSC
2 D1 4.50 4.90 5.10
c D2 3.50 −−− 4.22
A1 E 6.15 BSC
E1 5.50 5.80 6.10
1 2 3 4 E2 3.45 −−− 4.30
e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3X C K 1.20 1.35 1.50
L 0.51 0.61 0.71
e SEATING
L1 0.05 0.17 0.20
0.10 C PLANE
M 3.00 3.40 3.80
A DETAIL A q 0_ −−− 12 _

0.10 C STYLE 1:
PIN 1. SOURCE
SIDE VIEW 2. SOURCE
DETAIL A SOLDERING FOOTPRINT* 3. SOURCE
4. GATE
3X 4X 5. DRAIN
8X b 1.270 0.750
4X
0.10 C A B 1.000
0.05 c L e/2
1 4
0.965
K
1.330 2X
0.905
2X
E2
PIN 5 M 0.495 4.530
(EXPOSED PAD) L1
3.200
0.475

G D2
2X
BOTTOM VIEW 1.530
4.560

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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