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PNP Silicon: Semiconductor Technical Data
PNP Silicon: Semiconductor Technical Data
PNP Silicon: Semiconductor Technical Data
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating Symbol 2N5400 2N5401 Unit CASE 29–04, STYLE 1
Collector – Emitter Voltage VCEO 120 150 Vdc TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N5400 120 —
2N5401 150 —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 mAdc, IE = 0) 2N5400 130 —
2N5401 160 —
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 100 Vdc, IE = 0) 2N5400 — 100 nAdc
(VCB = 120 Vdc, IE = 0) 2N5401 — 50
(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5400 — 100 µAdc
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5401 — 50
Emitter Cutoff Current IEBO — 50 nAdc
(VEB = 3.0 Vdc, IC = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.
ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5400 30 —
2N5401 50 —
150
h FE, CURRENT GAIN TJ = 125°C
100
25°C
70
50
– 55°C
30 VCE = – 1.0 V
VCE = – 5.0 V
20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA 10 mA 30 mA 100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
103
VCE = 30 V
102
IC, COLLECTOR CURRENT ( µA)
IC = ICES
101
TJ = 125°C
100
75°C
10–1
REVERSE FORWARD
10–2 25°C
10–3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0.7 1.0
VBE(sat) @ IC/IB = 10
0.6 0.5
θVC for VCE(sat)
0.5 0
0.4 –0.5
0.3 –1.0
0.2 VCE(sat) @ IC/IB = 10 –1.5
θVB for VBE(sat)
0.1 –2.0
0 –2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
100
70 TJ = 25°C
VBB VCC 50
+ 8.8 V –30 V
30
C, CAPACITANCE (pF)
10.2 V
20 Cibo
100 3.0 k RC
Vin
Vout 10
10 µs 0.25 µF RB 7.0
INPUT PULSE 5.0 Cobo
5.1 k
tr, tf ≤ 10 ns Vin 100 1N914 3.0
DUTY CYCLE = 1.0% 2.0
1.0
Values Shown are for IC @ 10 mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
1000 2000
700 IC/IB = 10
TJ = 25°C tr @ VCC = 120 V 1000
500 IC/IB = 10 tf @ VCC = 120 V
700 TJ = 25°C
300
tr @ VCC = 30 V 500
200
tf @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
300
100 200
70 ts @ VCC = 120 V
50 100
70
30
50
20 td @ VBE(off) = 1.0 V
VCC = 120 V 30
10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––
STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD
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◊ 2N5400/D