International Journal of Modern Electronics and Communication Engineering (IJMECE) ISSN: 2321-2152

Volume No.-6, Issue No.-5, September, 2018

Design and Optimization of Square SPI for Ultra-Wide Band

Applications
Beeresha R S A M Khan
Department of Electronics Department of Electronics
Mangalore University Mangalore University
Mangalore, India Mangalore, India
E-mail: beereshakote@gmail.com E-mail: asifabc@yahoo.com

Manjunatha Reddy H V
RF/Microwave Circuits Design
ICON Design and Automation Pvt. Ltd
Bangalore, India
E-mail: manjunatha_hv@rediffmail.com

Abstract: The design, simulation and implementation of microstrip square spiral inductors (SPI) for ultra-wideband applications. An accurate
analytical modeling was done by using the current sheet approximation (CSA) method. The simplified lumped equivalent circuit is used to
determine the physical dimension of the square SPI model. They are three different square turn SPI structures (1-turn, 2-turn, and 3-turns) are
electromagnetically (EM) simulate using physical dimensions. These physical dimensions help to achieve desired inductance values. The
implementation SPI structure in monolithic multilayer integrated circuit (MMIC) technique and operating frequency from 100MHz to 2000MHz
and calculate inductance and quality factor (Q-factor) at 950MHz for ultra-wide band applications. The SPI is model on RT/Duroid substrate and
measured with the network analyzer. The obtained results show that the average inductance of SPI (1-turn to 3-turn) increases by 74% and
quality factor decreases the average of 68%.The observed results show that average error of CSA v/s EM simulated = 5.66%, CSA v/s tested =
4% and EM simulated v/s measured = 6.87%. It is found that CSA, EM simulation and measured results are in close agreement with the smaller
average error. The analysis show that, increase in turns will influence to increases inductance value. The enhancement of the series resistance is
leading to deterioration of the Q-factor.

Keywords: SPI, Q-factor, Insertion Loss, Return Loss, CSA, Electromagnetic Simulation.
I. INTRODUCTION
The development of compact and low cost printed circuit
board fabrication is important in a wireless communication
system. The miniaturization can be achieved either by
compressing the size of individual components or by
integrating different functions within a single component. To
attain the above needs, one can employ a unique technique
called microwave multilayer integrated circuits (MMIC). The
MMIC is a simple technique, which is reliable in an electrical
and thermal performance of passive components. The MMIC
technology is widely used in ultra-wideband applications like
radar [1], wireless communication [2] and remote sensing [3].
The MMIC has accomplished for accurate characterization
of planar passive transmission lines [4]. The planar passive
components such as SPI, inter digital capacitor (IDC) and these
are fabricated using MMIC technique. The choice of optimal
geometry of the planar passive components depends on
operating frequency. The planar circuit will experience a
passive component effect while transmitting higher frequency
signals are passing through it. The increase of passivity will
deteriorate Q-factor. The Q-factor is a key parameter to
improve circuit efficiency [5]. Many researchers have designed
a suitable inductor model with multilayer substrate material and
geometric calculation to improve Q-factor [6] [7] [8].
The better efficiency of a spiral inductor is directly reflected
by its Q-factor. The optimization of Q-factor depends on
various physical parameters such as a number of turns (n),
conductor width (W), conductor length (L) space (S) between
the conductors, inner diameter (Di) and outer diameter (Dout).
However, the number of turns used in SPI, which is dominated
inductance value than other parameters (W, L, and S) because
smaller variation in number turns leads to significant changes
in Q-factor and inductance. Therefore, in this work, we
investigated the role of the number of turns on inductance value
and Q-factor of the square SPI structure. We varied the number
of turns from one to three (n=1 to n=3) of a square spiral
inductor for100MHz to 2000MHz operating frequency and
calculate the inductance and Q-factor at 950MHz.
II. BASICS OF SPIRAL INDUCTOR (SPI)
The SPI is available in different structures such as straight
narrow racks, single loop, and multi-turn. In the multi-turn
inductor of the circular and square structure are preferred for
higher inductance value of passive components development.
The square SPI structure is widely used due to its less

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 International Journal of Modern Electronics and Communication Engineering (IJMECE)
Volume No.-6, Issue No.-5, September, 2018
complexity in analytical design and easy fabrication than
circular inductor structure with the help of lumped equivalent
circuit as shown in figure 1 and 2 [9].
Figure1.SPI Structure
Figure2.Equivalent Circuit of SPI Structure
The frequency dependency of the spiral metal coils series
inductance and resistance represents the parallel Rs and Ls of
the circuit. The Cs is the series capacitance of the conductor and
Cox is present in space between parallel conductors. The Rsi
and Csi represent the DC resistance of the metal line [10]. To
facilitate the design of such components, significant work has
gone into modeling spiral inductors using lumped circuit
models [11] [12]. The parasitic resistors and capacitors in this
model have simple physically intuitive expressions, but the
inductance value lacks a simple but accurate expression. Figure
2 shows the equivalent circuit for the planar spiral inductor.
Using this equivalent circuit to calculate the inductance value
for a given frequency with the help of S-parameter. The S-
parameters are calculated in AWR tool and transformed into Y
parameters from which the inductance L and Q factor can be
calculated based on the following equations [13] 14].
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1
𝐼𝑚
𝑌21
𝐿= (1)
2𝜋𝑓
RES Publication © 2012
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ISSN: 2321-2152
1
𝐼𝑚
𝑌11
𝑄 − 𝐹𝑎𝑐𝑡𝑜𝑟 = 1
(2)
𝑅𝑒
𝑌21
Where Y: are the Y parameter and f is a signal frequency.
The characteristics of the spiral inductor usually having three
important figure of merit like inductance, quality factor and
self-inductance (SRF) [15]. The geometric parameters will
determine inductance and Q- factor. The SRF for an inductor
can be viewed as the maximum frequency at which the inductor
value is positive. When the frequency increases, the inductor
value becomes negative, i.e., the inductor acts like a capacitor.
The lumped equivalent circuits will help to design planar
square SPI structure with desired inductance and Q-factor.
III. SPI DESIGN USING CSA METHOD
The planar SPI geometric scale model with help of lumped
equivalent circuit and analyze S- parameters of the desired
frequency. The current distribution in square SPI structure is
dependent on the desired frequency. However, the current
distribution may affect by few phenomena such as skin effect
and proximity effects of neighboring conductor segments. The
current distribution in an isolated conductor is explained by
many authors adopting the closed-form equations. However,
closed-form equations face shortcomings during their
incorporation in explaining the current distribution
phenomenon in SPI due to the proximity effects [16]. To
overcome the proximity effects, slightly modified closed-form
equations called simple equations [17]. The simple equations
describe the current distribution in the conductor. This is
approximate in a stepwise fashion by breaking up SPI structure
into sub-segments to make the uniform current distribution.
These equations help to calculate the total inductance of the
structure with the help of each segment (4-segment in one turn)
self and mutual inductance between segment to segment of SPI
square SPI structure [18] [19].
Furthermore, simple equations are classified as modified
wheeler formulas, monomial expression and current sheet
approximation (CSA) [6]. The modified wheeler formula is
particularly suited for the octagonal and hexagonal structure to
calculate inductance value. This technique is associated with
the collection of all layout data to fit into the structure and
calculate the inductance value [6]. The monomial expression is
well suited for circular structure, where the inductance value is
calculated by considering the entire structure instead of
individual turns/tracks shape [20]. The CSA is a better method
to calculate the inductance value for a square spiral inductor
structure. The CSA method involves in approximating the sides
of a spiral inductor structure [21]. This method is used to
analyze self and mutual inductance by considering the opposite
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 International Journal of Modern Electronics and Communication Engineering (IJMECE) ISSN: 2321-2152
Volume No.-6, Issue No.-5, September, 2018

parallel sides of the spiral inductor. The self and mutual

inductance are evaluated using the concept of geometric mean
distance (GMD) [6].

𝜇𝑛2 𝑑𝑎𝑣𝑔 𝐶1 𝐶2
𝐿𝑔𝑚𝑑 = ln + 𝐶3 𝜌 + 𝐶4 𝜌2 (3)
2 𝜌

Where the coefficient of Ci are layout dependent, µ is

permeability of a substrate, davg is the average distance
between the inner diameters (Di) to the outer diameter (Dout)
and ρ is the fill ratio. The total inductance of a square SPI Figure4.Fabricated Square SPI Structure
structure can be explained as the sum of self and mutual IV. OPTIMIZATION OF SPI TURNS
inductances using CSA method. The self-inductance is
To increase in SPI turns by keeping conductor width
calculated by considering each side of a square structure (out of
(0.2mm), space between the conductor (0.2mm) and an inner
four) individually in a turn. The mutual inductance is quantified
diameter (0.7mm) are constant. The turns are an increase from
by considering the inductance between sides in a turn.
1-turn to 3-turn respect to operating frequency from 100MHz to
2000MHz and calculate inductance and Q-factor at 950MHz.
The figure 4.a, show that operating frequency with respect to
the inductance value of 1-turn, 2-turn, and 3-turn. The figure
4.b, show the Q-factor with respect to the operating frequency
of the SPI turns.
1

INDUCTANCE_SIM
50
L_SRL2(2) (nH)
SPI_N1_Sim
40 L_SRL2(2) (nH)
SPI_N2_Sim
L_SRL2(2) (nH)
30 SPI_N3_Sim

2 20

10
Figure3.a. Two Turn SPI 2D Structure
0
100 600 1100 1600 2000
Frequency (MHz)

Figure5.a.SIM Inductance

QUALITY FACTORS_SIM
250
Q_IN2(2)
SPI_N1_Sim
Q_IN2(2)
200 SPI_N2_Sim
Q_IN2(2)
SPI_N3_Sim
150

100

50
Figure3.b.Two Turn SPI 2D Structure
0
100 600 1100 1600 2000
The 2D and 3D layout structure of SPI is designed by using Frequency (MHz)

the NI/AWR tool considering RT/Duroid multilayer substrate

material as shown in figure 3. In this structure, a dielectric layer
of height 0.508 mm is sandwiched between two conducting
copper layers of thickness 0.032 mm [22]. The input is applied
to the top layer and the corresponding output is derived from
the bottom layer. The fabricated miniature square SPI
structures are as show in figure 4.
RES Publication © 2012
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Figure5.b.SIM Q-Factor
As the observed results show, increase in turns of SPI will
effect increases the inductance value and decrease the quality
factor due to an increase in series resistance of the structure.
The variation of inductance value with respect to operating
frequency is linear at a lower frequency and nonlinear at the
higher frequency with respect number of turns. The linear
variation of inductance has lower dissipation due to smaller the
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 International Journal of Modern Electronics and Communication Engineering (IJMECE) ISSN: 2321-2152
Volume No.-6, Issue No.-5, September, 2018

series resistance. The increase in turns to increases series

resistance influence in the exponential increase in inductance
value. In our design shows that 1-turn and 2-turn SPI has
almost linear inductance value with respect to operating
frequency. The 3-turn SPI structure inductance value almost
linear up to 1GHz, and after that increases rapidly due to
increase in series reactance with respect to proposed geometric
scaling and operating frequency.

SPI_TURNS_S11_SIM
0

-5

-10

-15 DB(|S(1,1)|)
SPI_N1_Sim
-20 DB(|S(1,1)|)
SPI_N2_Sim
-25 DB(|S(1,1)|) Figure8.Tested andSIM Insertion Loss of 1 to 3 Turns
SPI_N3_Sim
-30
100 600 1100 1600 2000
Frequency (MHz) The figure 8 and 9, show comparative results of EM
simulated and tested S-parameters such asS11 and S21 of
Figure6.a.SIM Return Loss
square SPI. There is a smaller deviation between simulated and
SPI_TURNS_S21_SIM tested results because of an addition of SMA connector and
0
soldering material. The observed EM simulated S-parameters
are better agreement with the tested structure of n = 1 to n = 3.
-5
The observed results at 950MHz are tabulated in table 1.
DB(|S(2,1)|)
SPI_N1_Sim Table1.Best results
-10 DB(|S(2,1)|) Turns (n) S11SIM S11Test( S21SIM S21Test
SPI_N2_Sim
DB(|S(2,1)|)
(dB) dB) (dB) (dB)
-15
SPI_N3_Sim SPI_1=1 -10.7 -10.49 -0.406 -0.424
100 600 1100 1600 2000
Frequency (MHz)
SPI_2=2 -5.58 -6.29 -1.447 -1.204
SPI_3=2 -2.11 -2.19 -4.252 -4.132
Figure6.b.SIM Insertion Loss
V. RESULTS AND DISCUSSION
For ultra-wideband applications, we consider 950 MHz to
calculate the inductance and Q-factor of SPI. The S-parameters
of SPI and tested results of desired frequency shown in table 1.
The S11 and S21 of simulated results are well matched with
tested results. From the simulated results of S-parameters are
used to calculate the inductance and Q-factor of a tested
structure using equation (1) and (2). The theoretically
calculated inductance value using CSA with proposed
geometric scale for design SPI model.
The smaller deviation can be observed by comparing CSA,
EM simulated and tested results. The deviation is due to the
reactance of the input/output connector and soldering material,
which leads error compare between simulated and tested. The
average inductance error of EM simulated with CSA is 5.66%,
CSA with tested is 4% and EM simulated with tested is 6.87%
Figure7.Tested andSIM Return Loss1 to 3 Turns
as shown in table 2. The error percentage is negligible and it is
almost less than 7% with we achieve 93% matched
performance of designed and fabricated SPI models.

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 International Journal of Modern Electronics and Communication Engineering (IJMECE) ISSN: 2321-2152
Volume No.-6, Issue No.-5, September, 2018

CSA EM-Sim Tested_Ind Error %_CSA Error %_CSA Error %_EM

Turns (nH) (nH) (nH) V/S EM V/S Test V/S Test

SPI_1=1 5.3 5.42 5.58 2.26 5.28 2.95

SPI_2=2 10.02 10.85 9.63 8.3 3.9 11.24
SPI_3=2 23.51 22.5 22 6.42 2.84 6.42
Average Error in % 5.66 4 6.87

To reduce the resistive loss of a conductor is to reduce the
conductor width to minimize the substrate loss and which is
more dominant than the resistive loss for large inductor
structure [23]. Figure 7 shows inductance versus the number of
turns and average error percentage of a square spiral inductor.
The inductance of an SPI increase by increase in turns. The
measured inductance value of 1-turn to 2-turn increases by 42%
and 2-turn to 3-turn is 56%. The observed tested results show
that increase turn will result to increase inductance value
linearly with average 15% in each turn (1-turn to 2-turn and 2-
turn to 3-turn) and 74% from 1-turn to 3-turn with respect to
proposed geometric scale.
The Q-factor is one of a figure of merit to justify SPI
efficiency. We use the conventional definition of the Q-factor,
being the ratio of the stored to dissipated total energy in the
component. The desired magnetic and parasitic capacitive
energy of the components are considered in this definition. This
is in contrast to other definitions of a Q-factor that relate to the
stored magnetic energy only [24-25]. In RF circuit design,
however, consideration of the total energy stored in the
component and the total loss is relevant.
QF_Sim QF_Tested
160
Q-Factor
better Q-factor we need to know the operating frequency and
physical scaling of SPI.
VI. CONCLUSION
The 1-turn to 3-turn spiral inductors are designed with
constant conductor width, inner diameter, and space between
the conductors. The systematic characterization of square SPI
on RT/Duroid substrate using NI/AWR software. The
performance of Square SPI is analyzed with the variation of the
number of turns. By increasing the number of turns from 1 to 3,
the inductance value is improved by 75% and the Q-factor falls
down 68%. The fabricated structures results are well matched
with EM simulated and designed results. The observed results
show that increase in turns will influence to increases
inductance of square SPI. This work helps to design specified
value of inductance with desired operating frequency for
RF/Microwave component modeling and development for
ultra-wide band applications.
ACKnowledgment
The authors would like to thank ICON design Automation
Pvt Ltd Bangalore, for their help and guidance to carry out this
work at their R&D lab.
References

120
80
40
0 Electronic networks and Devices, vol. 2, pp. 153-186, Sept-
1 2 3
Turns
Figure9.Turns V/S Q-factor
The Q-factor = XL/RS (XL =L), for the perfect inductor
the series resistance is nearly equal to zero then Q-factor will
be infinity. However, in practical circuits, the series resistance
affects to decrease the Q-factor and increases the dissipation.
Figure 6 shows the Q-factor versus the number of turns. The
EM simulated and tested structures give better quality factor at
desired operating band. The observed EM simulated Q-factor
decreases with increase in turns. This shown that increase SPI
turns increases inductance and decreases Q-factor. To achieve
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