Journal of the Ceramic Society of Japan 111mTn348–351iB@@Cj

Paper

ÍçµÊdċ@fì»V^ Al4SiC4 ċÌmM`±¦g

üMc£W”m·x˶«
äãKiEX åjERû¾Ç
¼Ã®HÆåwÞ¿HwÈC466–8555 ¼Ã®sºaæä튬

Thermal Conductivity and Temperature Dependence of Linear Thermal Expansion

Coe‹cient of Al4SiC4 Sintered Bodies Prepared by Pulse Electronic Current Sintering
Koji INOUE, Satoshi MORI and Akira YAMAGUCHI
Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso­cho, Showa­ku, Nagoya­shi 466–8555

The thermal conductivity and the temperature dependence of linear thermal expansion coe‹cient of Al4SiC4
sintered bodies were investigated from room temperature to 1200‹ C. Thermal conductivity decreased with
the increase porosity. The thermal conductivity and linear expansion coe‹cient of highly densitied Al4SiC4
body in a range from room temperature to 1200‹ C were 80 WEm|1EK|1 and 7.16~10|6 K|1, respectively.
[Received November 29, 2002; Accepted February 7, 2003]

Key­words : Al4SiC4, Aluminum silicon carbide, Compound in the system Al–Si–C, Carbide, Thermal conductivity,
Thermal expansion

A.  ¾
SiC ÍDê½­xÁ«1),2)C‚ÏH«1),2)ƂZ_i2545‹
C)3)
ðLµÄ¢éªC1600‹
CÈã̂·É¨¢ÄÏ_»«ªá¢±
Æ©çC‚·Þ¿ÆµÄÌprͧÀ³êÄ¢é4)D
Al–Si–C nÌ¡‡Y»¨ÆµÄCAl4SiC45), Al4Si2C55), Al4Si4
C76), Al4Si3C67)CÆ Al8SiC78)Ì 5 íÞÌ»‡¨ª¾ç©É³ê
Ä¢éD»Ì†Åà Al4SiC4 ÍC‚Z_i2037‹ C)9) Åυa«
ÉDê C³k­xª SiC Éä×Ă¢±Æ©ç11),12) C‚·
10)

\¢Þ¿ÆµÄúÒ³êéD
»ÝÜÅÉ Al4SiC4 ÍC_»³êéÆ\Êɀ‰Cg i3Al2O3¥
2SiO2 jÆR‰“_€iAl2O3 j©çÈéÛìwª`¬³êCD
ê½Ï_»Á«ð¦·±Æª¾ç©É³êÄ¢éª13)`15)CM
`±âMc£ÈÇ̂·Á«É¢Ä;ç©É³êĢȢD
{¤†ÍCAl4SiC4 ÌÞ¿J­ðîbƵÄCAl4SiC4 ċ
ÌÌM`±¦ÆüMc£W”Ì·x˶«É¢ľç©Éµ Fig. 1. Granular variation of the synthesized Al4SiC4 powder.
½D

B. À±û@ ̳Í̺Åp‹XÊdµC¨æ»100‹ C/min Å1400`1700‹

B.A o­´¿
o­´¿ÆµÄCȺÌû@Å Al4SiC4 ²–ð‡¬µ½D
Al ²–iƒx99.9÷C½Ï±a10.00 mm), Si ²–iƒx98÷C
½Ï±a5.00 mm), C ²–iƒx99.9÷C½Ï±a5.00 mmj
ð Al/Si/C4/1/4 (molar ratiojÉÈé椼®¬‡µC»
êð20~20~(5`10)mm3 ̳ûÌÉñ80 MPa ż¬`ãC
100 MPa Å CIP ¬`µC³²Ìð컵½D±Ì³²ÌðA
‹~i{[gÌãÉu«C»êðÇódCFÉu¢½DĬÍ
0.2`0.3 l/min Ŭüµ½A‹S“KXµÍC†C10‹
Å1700‹ CÜÅÁMµÄ 4 h ۝ãC10‹ C/min Åñ400‹CÜÅ
~·µ½D¾çê½Ä¬ÌÍ Al4SiC4 P¡Å èC±êð{[
‹~‹Å24 h ²ÓµÄ Al4SiC4 o­´¿²–Ƶ½D»Ì±x
ªzÍC}PÌæ¤Å èC½Ï±aª1.04 mm Å éD
B.B Ž±Ìì»
Al4SiC4 ²–ðàa20 mm ÌJ[{“_CÉ[qµCp‹X
Êdċ@ipulse electronic current sinteringEȺ PECS Æ
ª·jÉæèsÁ½DðÍ^óµÍC†CãºûüÉ80 MPa
C
ÜÅÁMµÄ30 min ۝µC»Ìã©Rúâµ½D
B.C ċÌ]¿
2.2ßžçê½Ä‹ÌÌ©³§xyÑ^§xðA‹Lf
X@yÑsNm[^[@Éæè»ê¼êªèµCŠÎ§xð
Zoµ½DċÌÌ÷\¢ð–¸^dq°÷¾iSEMjÉæè
Ï@µ½D
B.D M`±¦ªè
2.2ßž½k§Ä‹Ì©çŽ±Ðð q10~1 mm3 ÉÈéæ
C/min ¤¸§Jb^[ðp¢ÄØèoµ½D·×Ä̎±ÐÌ\Êð
0.5 mm Ì_C„‚“hy[XgÉæ褁dã°µCAZg
“Éæè´¹gôòµC»Ì㣇³¹½D±ÌŽ±ÐÉ¢
ÄåCµÍC†CŒ[U[t‰bV…@ÉæèäMiCp jÆ
MgUW”ikjðªèµCȺɦ·®ÉæèM`±¦i lj
ðß½16)D
lr¥Cp¥k (1)
½¾µClFM`±¦iW¥cm|1¥K|1), rF©³§x
ig¥cm|3),

348
 äãKi ¼ Journal of the Ceramic Society of Japan 111mTnB@@C 349

CpFäMiJ¥g|1¥K|1 ), kFMgUW”icm2¥s|1 jÅ éD º·©çÅå1200‹ C̊è·xÔɨ¯éüMc£W”ðª

B.E üMc£W”ªè èµC·xÉεÄ}¦·éÆ}TÌæ¤ÉÈéD±Ì}©ç
2.2ßž½k§Ä‹Ì©çŽ±Ðð 3~4~10 mm3 ÉÈé 1400`1700‹
CÅĬµ½ Al4SiC4 ċÌÌüMc£W”ÍCÄ
椸§Jb^[ðp¢ÄØèoµ½D·×Ä̎±ÐÌ\Ê ‹·xÌã¸ÆÆàå«­ÈèC1650‹ CÈãÌċ·xÅ}
ð0.5 mm Ì_C„‚“hy[XgÉæ褁dã°µC»Ì ƒÉÁµC1700‹ CÅÅàå«­ÈÁ½D±ÌÆ«üMc£W
ãAZg“Éæè´¹gôòµC»Ì㣇³¹½D±ÌŽ± ”ÍC·x˶«ð¦µCá·Å}ƒÉÁµ½ªD‚·ÉÈ
ÐÉ¢ÄA‹S“KXµÍC†Cº·©ç1200‹ CÜÅÁM éÆÉâ©ÉÁµ½D
µÄCº·©çÅå1200‹ CÜÅ̊è·xÔɨ¯éüMc
£W”ðªèµ½D D. l @
D.A M`±
C. ‹ Ê 1400`1700‹
CÅĬµÄ¾çê½ Al4SiC4 ċÌÌM`±¦
C.A ÷\¢ ÍC} 4 ɦ·æ¤É1650‹
CÈãÌċ·xÅ}ƒÉÁµÄ
80 MPa ̳ÍÅ1400`1700‹C, 30 min ĬµÄ¾çê½ ¢éD±ê͟Ìæ¤Él¦çêéD
Al4SiC4 ċÌ̧xÏ»ð}Qɦ·D©³§xÍC·xª êÊÉZ‰~bNXÌM`±ÍCA±ŠðʶÄÌñ²ae
1400`1600‹CÅÏ»¹¸C1600`1700‹ CŝÁµ½Dµ©µC «gÌ`dC”ÍtHm“ÆæÎêéMGl‹M[ÊqÔ̊
^§xÍ1400`1700‹ CÅÙÆñÇÏ»µÈ©Á½D»Ì‹ÊC
ŠÎ§xÍCċ·xª1600‹ C©ç1700‹ CÖ㸷éÆC
70.2÷©ç97.2÷Ö}ƒÉÁµ½D
1400`1700‹
CÅĬµÄ¾çê½Ä‹ÌÌjfÊ SEM Ê
^ð}Rɦ·D1400`1600‹ CÌċÌÅÍCñ 1`5 mm Ì
±qªÏ@³êCÙÆñÇċµÄ¢È©Á½Dµ©µÈª
çC1650`1700‹ CÌċÌÅÍk§»ªisµCñ10 mm Ü
Ŭ·µ½±qªÏ@³ê½D
C.B M`±
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CÅĬµÄ¾çê½ Al4SiC4 ċÌÉ¢ĺ
·É¨¯éċÌÌ©³§xCäMÆMgU¦Ì‹Êð\PÉ
¦·D©³§xÆMgU¦ÍC1400‹ CÅÅଳ­Cċ·
xÌã¸ÆÆàÉå«­ÈèC1700‹ CÅÅàå«©Á½Dê
ûCäMÍC1400‹ CÅÅàå«­Cċ·xÌã¸ÆÆàÉ
¬³­ÈèC1700‹ CÅÅଳ©Á½D
¾ç꽩³§xCäMÆMgU¦Ì‹Ê©ç(1)®ðp¢
ÄM`±¦ðZoµCċ·xÉεÄ}¦·éÆ}SÌæ¤
ÉÈéD±Ì}©çM`±¦ÍC1400‹ CÅĬµ½ Al4SiC4 Ä
‹Ìª53 W¥m|1¥K|1 ÅÅଳ­Cċ·xª1650‹ CÈã
ÉÈéÆ}ƒÉå«­ÈèC1700‹ CÅĬµ½ Al4SiC4 ċÌ
ª80 W¥m|1¥K|1 ÅÅàå«©Á½D
C.C Mc£
1400`1700‹
CÅĬµÄ¾çê½ Al4SiC4 ċÌÉ¢ÄC

Fig. 3. SEM photographs of the fractured surface of the Al4SiC4

body sintered at 1400–1700‹
C for 30 min under 80 MPa in vacuum
by PECS.

Table 1. Characteristics of the Al4SiC4 Body Sintered at

1400–1700‹
C for 30 min Under 80 MPa in Vacuum by PECS

Fig. 2. Densities of the Al4SiC4 body sintered at 1400–1700‹

C for
30 min under 80 MPa in vacuum by PECS.
350 p‹XÊdċ@Å컵½ Al4SiC4 ċÌÌM`±¦ÆüMc£W”Ì·x˶«

Fig. 4. Thermal conductivity of the Al4SiC4 body sintered for

30 min under 80 MPa in vacuum by PECS. Fig. 6. Thermal conductivity of the Al4SiC4 body sintered at
1400–1700‹ C for 30 min under 80 MPa in vacuum by PECS for its
relative density.

Fig. 5. Linear thermal expansion coe‹cient of the Al4SiC4 body

sintered at 1400–1700‹
C for 30 min under 80 MPa in vacuum by
PECS. Fig. 7. Arrhenius plots of linear thermal expansion coe‹cient of
the Al4SiC4 body sintered at 1400–1700‹C for 30 min under 80 MPa
in vacuum by PECS.

ÝìpÉæéàÌÆl¦çêÄ¢é17) Dá¦Î SiC ÌM`±

ªåÉtHm“UÉŠ–·étHm“–tHm“ŠÝìpÉ ¶é±ÆÉæÁıE̔ª¸­µC»Ì‹ÊM`±¦ªÇ­
æéàÌÅ é±Æ©ç18)CAl4SiC4 ÌM`±ÍtHm“ÉN ÈèCMaxwell ç̂f‹ÆÙÈÁ½àÌÆl¦çêéD
ö·éàÌÆl¦çêéD»µÄċÌÌM`±ÍCEÌÊÆ »µÄÅàk§È Al4SiC4 ċÌÍCM`±¦ª80 W¥m|1¥
嫳â±aÈÇÌ÷\¢Éå«­e¿³êéD1400`1700‹ C K|1 Å èCSlack21), Takeda22)çâ Kuramoto Æ Taniguchi23)
ÅĬµ½ Al4SiC4 ċÌÌM`±¦ðċÌ̊ΧxÉÎ çÉæÁÄñ³ê½‚M`±¦³@»‡¨Å é AlN Z‰
µÄ}¦·éÆ}UÌæ¤ÉÈéD±Ì}©ç Al4SiC4 Ä‹Ì ~bNXi270`95 W¥m|1¥K|1 jÌM`±¦ÉCG·éàÌ
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êC1400`1700‹ CÅĬµ½ Al4SiC4 ċÌÌM`±¦ÍC D.B Mc£
CE¦É˶µ½àÌÆl¦çêéD±±ÅCEªªUµÄ¢ } 5 ɦ·æ¤É1400`1700‹
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é Al4SiC4 ½‹»ÌðCMaxwell çÉæÁÄñ¥³ê½ªU± üMc£W”Í·xÌã¸ÆÆàɝÁµ±¯Ä¢éD±Ì}
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