Experiment #1: JFET Characterisation

Objective: To investigate the characteristics of JFET-input, output and transconductance

characteristics curve.

Component Required: JFET(n-channel), Resistors 1K(2),

Facilities Required: Breadboard, variable power supply, multimeter

Circuit Diagram:

Theory:

The junction FET has a channel consisting of N-type semiconductor or P-type semiconductor material
and the gate is made of the opposite semiconductor type.

The junction FET has a channel consisting of N-type semiconductor or P-type semiconductor material
and the gate is made of the opposite semiconductor type. The N-channel is doped with donor
impurities where the flow of current through the channel is negative in the form of electrons. The P-
channel is doped with acceptor impurities on where the flow of current is positive in the form of
holes. Since electrons have a higher mobility through a conductor compared to holes, N-channel
JFETs have a greater channel conductivity compared to their equivalent P-channel type

The input impedance is extremely high since the gate junction is reverse biased and because there is
no minority carrier contribution to the flow through the device. The depletion of charge carriers
from the N-channel serves as the control element for the JFET. The majority carriers from a larger
depletion zone around the gate are depleted when the gate is made more negative. For a given
value of source-to-drain voltage, this reduces the current flow.

Characteristics of JFET for being commonly used:

 Fast switching 
 For low frequency operation, source and drain can be interchanged 
 Gate voltage that controls drain current 
 Single majority carrier 
 Small in size 
 High “Z” input

Observation:

Graphs:
Tables:

Id(mA) Vds(V)
 0 0
1.3 4
1.32 8
1.34 12
1.35 16

Id(mA) Vgs(V)
12 0
9 -0.4
7 -0.8
4 -1.2
3 -1.6

Calculation and Results:

Output resistance= (16-2) V/ (1.35-1.3) mA=280k ohm

On resistance= (2-0)V/(1.3-0)mA=1.54k ohm

Transconductance=(12-9)mA/(0.4-0)V=7.5k V/A