VUM 33-05N

Power MOSFET Stage ID25 = 47 A

for Boost Converters VDSS = 500 V
Module for Power Factor Correction
RDS(on) = 0.12 Ω

2 3 4
5 1 3 2 7 8 4 6 1
VRRM (Diode) VDSS Type
V V
600 500 VUM 33-05N

6 7 8
5

Symbol Conditions Maximum Ratings Features

VDSS TVJ = 25°C to 150°C 500 V • Package with DCB ceramic base plate
VDGR TVJ = 25°C to 150°C; RGS = 10 kΩ 500 V • Soldering connections for PCB mounting
VGS Continuous ±20 V • Isolation voltage 3600 V~
• Low RDS(on) HDMOSTM process
MOSFET

ID TS = 85°C 33 A
• Low package inductance for high
ID TS = 25°C 47 A
speed switching
IDM TS = 25°C, tp = ① 130 A
• Ultrafast boost diode
PD TS = 85°C 310 W • Kelvin source for easy drive
IS VGS = 0 V, TS = 25°C 33 A
ISM VGS = 0 V, TS = 25°C, tp = ① 130 A Applications

VRRM 600 V • Power factor pre-conditioner for

IFAV TS = 85°C, rectangular δ = 0.5 33 A SMPS, UPS, battery chargers and
Boost Diode

inverters
IFSM TVJ = 45°C, t = 10 ms (50 Hz) 300 A • Boost topology for SMPS including
t = 8.3 ms (60 Hz) 320 A 1~ rectifier bridge
TVJ = 150°C,t = 10 ms (50 Hz) 260 A • Power supply for welding equipment
t = 8.3 ms (60 Hz) 280 A
Advantages
P TS = 85°C 59 W
• 3 functions in one package
VRRM 1200 V • Output power up to 8 kW
Rectifier Diodes

IdAV TS = 85°C, sinus 180° 54 A • No external isolation

IFSM TVJ = 45°C, t = 10 ms (50 Hz) 300 A • Easy to mount with two screws
t = 8.3 ms (60 Hz) 320 A • Suitable for wave soldering
• High temperature and power cycling
TVJ = 150°C,t = 10 ms (50 Hz) 260 A
capability
t = 8.3 ms (60 Hz) 280 A
• Fits easiliy to all available PFC
P TS = 85°C 50 W controller ICs
TVJ -40...+150 °C
TJM 150 °C
Tstg -40...+150 °C
Module

VISOL 50/60 Hz t = 1 min 3000 V~

IISOL ≤ 1 mA t=1s 3600 V~
Md Mounting torque (M5) 2-2.5/18-22 Nm/lb.in.
Weight 28 g
① Pulse width limited by TVJ

IXYS reserves the right to change limits, test conditions and dimensions. 20070704a

© 2007 IXYS All rights reserved 1-4

 VUM 33-05N

Symbol Conditions Characteristic Values 350

(TVJ = 25°C, unless otherwise specified) A V = 0.8V
R RRM
min. typ. max. 300
VDSS VGS = 0 V, ID = 2 mA 500 V
VGS(th) VDS = 20 V, ID = 20 mA 2 5 V 250
IFSM TVJ= 45°C
IGSS VGS = ±20 V, VDS = 0 V ±500 nA 200
IDSS VDS = 500 V, VGS = 0 V 2 mA
150
RDS(on) TVJ = 25°C 0.12 Ω
RGint TVJ = 25°C 1.5 Ω
MOSFET

100
gfs VDS = 15 V, IDS = 12 A 30 S
VDS IDS = 24 A, VGS = 0 V 1.5 V TVJ= 125°C
50
td(on) VDS = 250 V, IDS = 12 A, VGS = 10 V 100 ns
td(off) Zgen. = 1 Ω, L-load 220 ns 0
Ciss 8.5 nF 0.001 0.01 0.1 s 1
t
Coss VDS = 25 V, f = 1 MHz, VGS = 0 V 0.9 nF
Crss 0.3 nF Fig. 1 Non-repetitive peak surge
current (Rectifier Diodes)
Qg VDS = 250 V, ID = 12 A, VGS = 10 V 350 nC
RthJH with heat transfer paste 0.21 K/W
VF IF = 33 A; TVJ = 25°C 1.75 V 500
TVJ =150°C 1.5 V A2s
IR VR = 600 V, TVJ = 25°C 1.5 mA 400
Boost Diode

VR = 480 V, TVJ = 25°C 0.25 mA

TVJ =125°C 7 mA
VT0 For power-loss calculations only 1.21 V 300
rT TVJ = 125°C 9 mΩ TVJ= 45°C
I2t
IRM IF = 30 A; -diF/dt = 240 A/μs
200
VR = 350 V, TVJ = 100°C 10 11 A
RthJH with heat transfer paste 1.1 K/W TVJ= 125°C
VF IF = 20 A, TVJ = 25°C 1.5 V 100
Rectifier Diodes

TVJ = 125°C 1.5 V

IR VR = 1200 V, TVJ = 25°C 0.25 mA 0
VR = 0.8 •VRRM,TVJ = 125°C 2 mA 1 ms 10
t
VT0 For power-loss calculations only 1.18 V
rT TVJ = 125°C 12 mΩ Fig. 2 I2t for fusing (Rectifier Diodes)

RthJH with heat transfer paste 1.3 K/W

Dimensions in mm (1 mm = 0.0394")

IXYS reserves the right to change limits, test conditions and dimensions. 20070704a

© 2007 IXYS All rights reserved 2-4

 VUM 33-05N

80 80 2.5
A 10 V A RDS(on) ID=18A
70 70
7V 2.0
60 60
6V
norm.
ID 50 ID 50
1.5
TVJ = 25°C
40 40
TVJ = 125°C
30 VGS= 5 V 30 1.0

20 20
0.5
10 10

0 0 0.0
0 2 4 6 8 V 10 2 3 4 5 6 V 7 -50 0 50 100 °C 150
VDS VGS TVJ

Fig. 3 Typ. output characteristic Fig. 4 Typ. transfer characteristics Fig. 5 Typ. normalized
ID = f (VDS) (MOSFET) ID = f (VGS) (MOSFET) RDS(on) = f (TVJ) (MOSFET)

1.4 12 100
BVDSS V nF
VGS(th)
10
1.2 VDS= 250 V
VGS(th) VDSS
ID = 18 A Ciss
8 10
1.0 VGS
IG = 10 mA C
norm.
6
0.8 Coss
4 1

0.6
2
Crss

0.4 0 0.1
-50 0 50 100 °C 150 0 100 200 300 nC 400 0 5 10 15 V 20
TVJ Qg VDS
Fig. 6 Typ. normalized BVDSS = f (TVJ) Fig. 7 Typ. turn-on gate charge Fig. 8 Typ. capacitances C = f (VDS),
VGS(th) = f (TVJ) (MOSFET) characteristics, VGS = f (Qg) (MOSFET) f = 1 MHz (MOSFET)
80 120 3.0
TVJ=100°C
s A μC
VR= 350 V
100 2.5
60 max.

gfs 80 Qrr 2.0 IF = 37 A

IF TVJ=150°C IF = 74 A
40 60 TVJ=100°C 1.5 IF = 37 A
IF = 18.5 A
TVJ= 25°C
40 1.0
20
20 0.5

typ.
0 0 0.0
0 20 40 60 80 A 100 0.5 1.0 1.5 2.0 V 2.5 10 100 A/μs 1000
ID VF -diF/dt

Fig. 9 Typ. transconductance, Fig. 10 Forward current versus Fig. 11 Recovery charge versus -diF/dt
gfs = f (ID) (MOSFET) voltage drop (Boost Diode) (Boost Diode)

IXYS reserves the right to change limits, test conditions and dimensions. 20070704a

© 2007 IXYS All rights reserved 3-4

 VUM 33-05N

40 1.4 0.6
TVJ=100°C TVJ=100°C
μs
A VR= 350 V max. VR= 350 V
0.5
1.2
30 Kt trr
IRM
IF = 37 A 0.4
IF = 74 A 1.0 max. IF = 37 A
IF = 37 A IF = 74 A
20 IRM 0.3
IF = 18.5 A IF = 37 A
0.8 IF = 18.5 A
0.2
10 Qr
0.6
typ. 0.1
typ.
0 0.4 0.0
0 100 200 300 400 A/μs
500 600 20 40 60 °C 160
80 100 120 140 0 100 200 300 400 A/μs 600
500
-diF/dt TVJ -diF/dt
Fig. 12 Peak reverse current versus Fig. 13 Dynamic parameters versus Fig. 14 Recovery time versus
-diF/dt (Boost Diode) junction temperature (Boost Diode) -diF/dt (Boost Diode)

18 12 10
V TS =85°C TS =85°C
kW kW
16
10
8
14 Vin = 230 V/50 Hz
VFR Pout Pout fc = 40 kHz
VFR 8
12
6
10 6

8 4
4
Vin = 115 V/60 Hz
6 fc = 80 kHz
tFR 2
2
4

2 0 0
0 100 200 300 400 A/μs
500 600 0 20 40 60 80 kHz 120
100 0 50 100 150 200
V 250
diF/dt fc Vin (RMS)
Fig. 15 Peak forward voltage versus Fig. 16 Output power versus carrier Fig. 17 Output power versus
-diF/dt (Boost Diode) frequency (Module) mains voltage

9 1.5
kW VUM 33
fc = 80 kHz K/W
8
Vin = 230 V/50 Hz
7 1.2

ZthJC Rectifier Diodes

Pout 6
0.9
5 Boost Diode

4
Vin = 115 V/60 Hz 0.6
3

2 0.3 MOSFET
1

0 0.0
40 60 80 100 °C 120 0.01 0.1 1 s 10
TS t

Fig. 18 Output power versus Fig. 19 Transient thermal impedance junction to case for all devices
heatsink temperature (Module)

IXYS reserves the right to change limits, test conditions and dimensions. 20070704a

© 2007 IXYS All rights reserved 4-4

Mouser Electronics

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VUM33-05N