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Electronic Properties of Tin Telluride: A First Principles Study
Electronic Properties of Tin Telluride: A First Principles Study
2
ABSTRACT
ab initio
Keywords: SnTe, electron momentum density, IV-VI semiconductor and LCAO method etc.
(Received …., in final form …. !!! Will be written by the editors !!!)
1. INTRODUCTION
O h Fmm
D h Pnma
2. COMPUTATIONAL DETAILS
ab-initio
Fmm a
k
p
n p i r ipr dr
i
p r
p
pz J(pz) in e/a.u.
(a.u.)
J100 J110 J111 Jave.
0.4
0.3
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
0 1 2 3 4 5
Fig. 1
Bz
n n
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-0.1
-0.2
-0.3
2 4 6 8 10 12 14 16
Fig. 2
z
4. CONCLUSIONS
7 1.5
1.0
6
0.5
5
0.0
4
-0.5
3 -1.0
0 2 4 6 8 10
2
1
0
0 2 4 6 8 10
Fig. 4
ACKNOWLEDGEMENTS
REFERENCES
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Phys. Rev. R10
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Semiconductor Lasers
Physica 139/140B
Phys. Rev. lett. 105
Optical Mat. 30
164
Phys. Stat. Sol. (b) 197
Phys. Rev. B 81
Phys. Rev. B 77
J. Phys.: Condens. Matter 14,
Inorganic Materials 44,
98
77 78 1396(E)
Compton scattering
Chem. Phys. 41
Chem. Phys. 59
6
15