PART 1

SEMICONDUCTORS

SPECIAL PURPOSE DIODES

BIPOLAR JUNCTION TRANSISTORS

BJT DEVICES

BJT AMPLIFIERS

FET DEVICES

FET AMPLIFIERS

BJT AND FET FREQUENCY RESPONSE

BASIC OP AMP CIRCUITS

SEMICONDUCTOR DIODES

DIODE APPLICATIONS

TRANSISTOR BIAS CIRCUITS

DC BIASING BJTS

FIELD EFFECT TRANSISTORS

DC BIASING FETS
 INDIABIX 1
SEMICONDUCTORS 9. An n-type semiconductor material 16. A reverse-biased diode has the
A. is intrinsic. connected to the positive
1. A silicon diode measures a low B. has trivalent impurity atoms side of the source, and the
value of resistance with the meter added. connected to the negative side of the
leads in both positions. The trouble, if C. has pentavalent impurity source.
any, is atoms added. A. cathode, anode
A. the diode is open. D. requires no doping. B. cathode, base
B. the diode is shorted to ground. C. base, anode
10. For a forward-biased diode, as
C. the diode is internally D. anode, cathode
temperature is , the forward
shorted. current for a given value of 17. What types of impurity atoms are
D. the diode is working correctly. forward voltage. added to increase the number of
2. Single-element semiconductors A. decreased, increases conduction-band electrons in intrinsic
are characterized by atoms with B. increased, increases silicon?
valence electrons. C. increased, decreases A. bivalent
A. 3 D. decreased, decreases B. octavalent
B. 4 C. pentavalent
11. Which statement best
C. 5 D. trivalent
describes an insulator?
D. 2 E. none of the above
A. A material with many free
3. Under normal conditions a diode electrons. 18. What factor(s) do(es) the barrier
conducts current when it is B. A material doped to have potential of a pn junction depend on?
A. reverse-biased. some free electrons. A. type of semiconductive
B. forward-biased. C. A material with few free material
C. avalanched. electrons. B. the amount of doping
D. saturated. D. No description fits. C. the temperature
D. all of the above
4. A diode conducts when it is 12. Effectively, how many valence
E. type of semiconductive
forward- biased, and the anode is electrons are there in each atom
material and the amount of
connected to the through a within a silicon crystal?
doping but not the
limiting resistor. A. 2
temperature
A. positive supply B.4
B. negative supply C. 8 19.An atom is made up of
C. cathode D. 16 A. protons.
D. anode B. neutrons.
13. The boundary between p-type
C. electrons.
5. As the forward current through a material and n-type material is called
D. all of the above
silicon diode increases, the internal A. a diode.
resistance B. a reverse-biased diode. 20. Reverse breakdown is a condition
A. increases. C. a pn junction. in which a diode
B. decreases. D. a forward-biased diode. A. is subjected to a large
C. remains the same. reverse voltage.
14. You have an unknown type of
B. is reverse-biased and there is
6. The movement of free electrons in diode in a circuit. You measure the
a small leakage current.
a conductor is called voltage across it and find it to be 0.3
C. has no current flowing at all.
A. voltage. V. The diode might be
D. is heated up by large
B. current. A. a silicon diode.
amounts of current in the forward
C. recombination. B. a germanium diode.
direction.
D. equilibrium.
21. There is a small amount of current
7.For a forward-biased diode, the poten as C. a D. a
barrier tial for rever
incre tem wa se-
ases. per rd- bias
atur bia
A. e ed
se
d germ
decr
sili aniu
ease
co m
s
n diod
dio e.
de
.
 INDIABIX 1
a e of This rea co 27. The
B. r u ward
c a curre e r se n. maximum
curre
r b rev nt is v r the number of
nt 24. The
o a ers called e e res electrons in
A. for throu forward
s r e- war rs n ist each shell of
d- gh a voltage
s r bia bia e t. an an atom is
silico across a
i sed s b D. r ce A. 2.
cur n conducting
t e dio ren r e of B. 2N2
t. diode silicon
h r de. e v the Wher
B. re incre diode is
o a e ma en
m 15. An ases, about
d k r teri is
ai ideal the A. 0.3
n e d s al. the
diode volta V.
s presents o e C. th num
c w ge B. 1.7
l at ber
o n acros V.
e im of
n c s the C. –
st when a pu the
u k diode 0.7 V.
a reversed- riti shell.
nt rr a A. inc D. 0.7
biased and rea es V. C. 4.
C. in e g ar
a(n) ses D. 8.
cr nt e 25. The
to e
e . c most 28. A silicon
a ad
a C. c u common diode is
when 0.7 de
s o r forward-
forward- V d type of
e n r biased. You
biased. ma to diode
s v e measure the
A. ope xim de failure is
e n voltage to
8. The n, um cr a(n)
nt t ground from
wide end sho . ea A. op
io . the anode at
arrow on rt B. de se en
n , and the
a B. sho al 22. As cre th B. sh
schemati rt, the as ort voltage from
c e
c ope for es. C. res the cathode
re
indicates n C. is a sta isti to ground at
sis
the C. ope r s nc ve .
ta
diode. n, el e e A. 0 V,
nc 26. What
ope at s. is 0.3 V
A. gr e occurs
n iv ad B. 2.3 V,
o 23. Dopi of when a
u D. sho el de 1.6 V
ng of a th conduction
n rt, y d C. 1.6 V,
semicon e - band
d sho c 2.3 V
ductor to m
rt o electron D. 0.3
B. di hol at
n material loses V, 0 V
re d eri
st means energy
ct the al. 29. The term
a A. t and falls
io ma D. tha bias in
n nt h back into a
. a teri t electronics
of hole in the
t al all usually
el D. d valence
e a tog im means
e band?
cr eth pu A. the
ct A. do
e er. riti valu
ro g pin
a B. tha es g e of
n l
s t ar B. re ac
fl u
o e im e co volta
e
w s pur re m ge in
-
C. c a itie mo bi the
t
at n s ve na sign
y
h d are d tio al.
p
o th ad to n B. the
e e
d de get C. ge
e n d pu ner cond
in s to
D. a re ati ition
cr u
n inc sili on of
e b
 INDIABIX 1
C. t he nel 10. Ref
c h stat C. pin er to
u e us
rr of
e v the
n a dio B. z n ply
t l de. e g rec
t u n tifie D. Sc this
h e e n rs hot figure.
r
SPECIAL- r e tky Identify
4. You
o o PUR C. v g have an 8. Re
the
f a Schottk
u POS r
a application fer to
g d t for a diode y diode.
h c E a i A. inc
this
ct to be used figur
a DIO v rea A. a
o in a tuning e.
p v e se. B. b
n o
DES r circuit. A
B. dec
Whic C. c
D. S type of h
j l r rea D. d
1.Schottky c diode to symb
u t e se. E. e
diodes h use might ol is
n a s C. re
are also ot be corre 11. LEDs
c g i mai
known as tk A. an n ct for are made
ti e y s LE out of
A. PIN the a
o s t D. A. silico
dio 3.The sa zene
n des a B. a r n.
Schottk me
. f . n Sc B. germ
y diode . diode
o B. hot c hot aniu
is used ?
r car e tky 7. W m.
A. in dio hat
rier . A. a C. galli
t hi de.
dio C. i kind B. b um.
g
h de n C. a of C. c silicon
h
e s. v Gu diode D. d and
-
C. ste e nn is E. e german
p
d p- r dio forme ium,
o
e rec y de. d by 9. Which but not
w
v ove f D. a joinin diode gallium.
e
i ry a var g a employs
r 12. The
c dio s act dope graded
ci
e des t- or. d doping? normal
rc
. s semic A. ze operati
ui 5. Refer to
t D. tun w ner ng
ts this figure. ondu
o nel it B. LE region
. Which ctor
dio c D for a
B. i symbol is regio
des h C. tun zener
o n correct for n with
. i nel diode is
p an LED? a
n D. ste the
e 2. Zener c g metal
p- A. forwa
r diodes i c A. a ?
re rd-
a with r ir B. b A. las co bias
t breakdown c c C. c er ve regio
e voltages u u D. d B. tun ry n.
less than 5 i it E. e B. r e- on.
p V operate t D. i
r 6. Refer to
predomina s n
o this figure.
ntly in p
p o If VIN
what type r
e w increases,
of e
r e IZ will
breakdown q e bi C. zero-
l ? u r
s v a crossi
y A. ava i e s
u ng
. lan r r re regio
D. t che p
i s gi n.
 INDIABIX 1
D. reverse- 18. The B. de v a t ara rated at 1 C. inc 20. What
breakd process cre o t typ cto WATt. The re diode
own of as l e e r maximum as operates
region. emitting e. t of D. Sc safe e, only with
photons C. re a p bre hot current the re majority
from a mai g r ak tky zener can ma carriers?
semicon n e e do carry is in A. laser
26. the
ductive the s d wn A. B. tunn
sa Back- sa
material o ? to- 1.61 A. el
me B. me
is called g m A. a back C. Scho
. r i v 161 mA. D. re ttky
A. p varact
25. Zener a C. m
h e n or D. step-
diodes l 16.1 mA. ai
o with a a diode recov
a n
t breakdown t n D. ery
s are th
o e t n 1.61 mA.
c used e 21. Refer to
l r l
h for 16. Refer sa this figure.
u t y
e what to this m Which
m h reaso figure. Find e, symbol is
i a i B. z
n? the tunnel de correct for a
n n n e
A. diode cr photodiode?
e n
symbol. ea
s
5 se A. a
A. a B. b
V B. b C. c
C. c D. d
o D. d E. e
w e
c p E. e
h r over-
e 22. What
e a C. v voltage
r 17. Refe type of diode
n protection
r to this maintains a
c 14. An e iod figure. If constant
e LED is ri e
. the load current?
forward- e sh current A. LED
13. B. g nc biased. s oul
att a increases, B. zene
Refer e. The diode r d
e ll IR will and r
to this i D. gall should e be
m IZ will . C. curr
figure. u ium be on, s off
pt ent
If VIN m ph but no i if
s regul
increas osp light is s for
to a ator
e, VR hid showing. t wa
r D. pin
will s e. o
A rd- E. none
e r
19. An 8.2 possible bia of
n i
i V zener trouble s se A. re the
d has a might be t d. ma abov
e resistance A. t D. the in e
. o
of 5Ω. The h o po the
C. e e sa 23.What
A. increas actual s we
l d me diode is used
e. voltage m r
e i , in seven-
B. decreas across its a su
c o inc segment
e. terminals ll ppl
t d rea displays?
C. remain r when the . y
e se A. zene
the o current is C. n vol
is B. dec r
same. l 25 mA is o tag
o rea B. LED
u A. 8.2 n e
p se, C. laser
m V. e is
e re D. Scho
i B. 125 . too
n mai ttky
n mV. . T hig n
e C. h h. the 24. Refer to
B. th
s 8.325 V. e e sa this figure. If
15.A 6.2 V
c D. s me VIN
e zener is
8.075 V. d decreases, IR
 INDIABIX 1
will B. a po 29. A act miz T fer to mum
w wer this value
A. in i circ O figur of IB
cr d uits R e. that will
e e . Dete produc
a r in S rmin e
s t circui
e. u ts 1. Re e the saturati
n laser or e mini on.
requi
i diode is a B. rev A. 9.2 BJT is
ring
n norma pn ers V short for
negat lly
g jun e, B. 9.9 A. base
ive emits ma
r ctio V juncti
resis A. c xim
a n C. – on
tance o ize
n dio 9.9 V transi
. h C. rev
g de D. – stor.
C. in e ers
e tha 9.2 V B. binar
ver r e,
to t A. 0.2 y
y e mi 7.When a
eli alw 5 juncti
fast nt ni transistor
mi ays mA on
- li miz is used
nat op B. transi
swi g e as a
e era stor.
tchi ht D. for switch, it
har tes 5.325 µA C. both
ng . wa is stable
mo in C. juncti
circ B. m rd, in which on
nic uits o an mi two transi
dis . n d is ni 1.065 µA
distinct stor.
tor D. in o do miz D.
regions? D. bipol
tio po c pe e
10.425 µA A. sat ar
n wer h d
no sup r to
ur juncti
rea ply o BIP 2. A ati on
son rec m the transistor
tifie at inh
O on transi
; amplifier an stor
onl rs. ic ere L has a d
li 9. For a
y 28. W
g
nt A voltage act
zen hat ca gain of ive silicon
ers type
ht pa R 100. If the transistor,
. B. act
are of cita input ive when a
use coher nc base- emitter
diode J voltage is an
d in a ent e junction is
is 75 mV, the d
bac com
and of U output cut forward-
k- mo the biased, it
monl
noc N voltage is: off
to- y de A. C. sa has a
bac used
hro ple C 1.33 V tur nominal
mat
k in
ic
tio T B. 7.5 ati voltage drop
con electr n V on of
figu ligh reg I C. an
onic
rati t. ion O 13.3 V d
tuner
on neith . D. 15 cu
s in
er N V tof
TVs? A. f
27.A coherent f
A. var o
tunnel nor D. no
act r T
diode mo ne
or w
is
B. Sc
noc a R of
used hro th
hot r A
A. i mat d e
tky
n
C. LE ic , N ab
h ov
i D light m S e
. a
g D. Gu I
x 8. The
h nn 30.A
- var
i S term
 INDIABIX 1
14. R 6 es of u e CC
saturation ratur
efer V bipol c 10. A is: e.
B. 0 to the neg C. varie
to ar certain
. emitter ativ s
this juncti transistor
7 and e with
figu on has IC = 15
V with I C.
re. transi mA and IB
C. 1 respect varies
The stors = 167µA;
. to the with
valu ? βDC is:
2 collector temper
e of A. np
V A. . A. 15
VBE n ature
D. A. p B. 167 and IC.
is: an A. 92
d 0.05 mA o C. 0.011
s D. 90 kΩ 18. A
0.079 V pn B.
it B. 9.1 transist
15. W p 11.Refer to
2.085 mA i M or data
hat B. pnn this figure.
and C. v Ω sheet
are e The value usually
nnp C. 10
the , of VCE is: identifie
C. ppn 1.065 mA 0
two n s βDC as
and D. kΩ
typ e
nnp D. 15 A. hre.
A. 0. g
7.4 mA 0 B. hFE.
3. A D. pts a
= C 4. What is ti kΩ
Refer . an
0. (s B
C d the v
to this 17. The
2 a . stp ratio of e
figure. value of
V, t) IC to IB? B. p
If VCE I 16. βDC
A. β o
is: In A. 9.9 is fixed
D s
this C V for
it
circ B. h B. 9.2 any
i
uit FE V
v parti
βDC C. α e C. 0.7 cular
= D
C , V trans
100 D. ei p D. istor.
and t o B. va
VIN h s 19.3 V rie
=8 e it 12. What s
V. r i does wit
D. V T β v
. βDC vary h
h DC e te
e with?
o C. n m
r e A. IC pe
v
a h g B. ºC
l FE a 6. Refer to i b n
u , ti o
e this s t o
b v figure. : t
u e h
o The
f t , value of º
I
n p VBC C
R o o
C

B
t s a
t α it n
h DC i d
a v
t 5. For º
e C
normal
w operation D. n IC
i e ,
l of a pnp g
l BJT, the a
base b
p must be ti
u
r v
with t
o e
d respect ,
 INDIABIX 1
C. IC . V CE . volt ude of C. 27.Wh shorts e
ag dark at is on the
13 19.What is es curren 4.375 mV (are) circuit
29. Refer to
the this figure.
o is t in a D. commo board
ratio of Determine
of the photot n D. all
IC to IE? the
A. tra ransist 4.375 V fault(s) of
A. βD minimum
B. nsi or in a th
C 26. What is value of VIN
C. B. sto usuall BJT- e
βD (are) from the
D. r in y falls based ab
C / general-
ov following
(βD the in purpose/s circuit?
0.375 e that will
C + line what mall- A. o
1)
saturate this
ar range signal p
28. T transistor.
C. βD reg ? transistors e
he
C ion A. m case n
either dc
of A type(s)? s
βDC / loa
its B. μ A. TO
(βDC d
op A -18 o
+ 1) line
era C. n B. TO r
or A on
tion -92 s
αDC, D. p a
? C. TO h
but A fam
A. 0 -39 o
not ily
< D. TO r A. 13.21
βDC 25.A 35 of
V -52 t V
20. Refer an npn heavily to mV coll
to this
CE
signal is E. all s B. 12.51
or pnp lightly B. 0. ecto
figure. transistor doped, for applied of V
7 r
The to the the i C. 0.7 V
? each < cha
value base of ab n D. 9.4 V
A. IE region? V ract
of βDC = ov t
A. bas erist
= 100 and IB e, e e
C ic
a r
VIN = 8 V. + coll E
< properly
curv BJ
Determine IC ect n
IC(sat). B. IB or,
V biased a
es T
of a
= emi
C
E(
transisto l
tran D
r with an t
IC tter m
ax r'e
sist E
+ B. emi o
IE tter
)
V =8
or VI
C. sho
C. IC , C
and t
ws C
= coll RC h
E(
=1
the E
IB ect e
A. 1 + or,
m
k.
A. sat S
ax ura
8 IE bas The t
) tio
m D. n e > out r 1. How
n
A o C. emi V put a reg much is the
B. 7. n tter, sig n ion base-to-
C
9 e bas nal s . emitter
E
2 o e, volt i
D. n B. cut voltage of a
m f coll ag
o s off transistor in
A t ect e
n t reg the "on"
C. 1. h or at
e o ion state?
8 e D. coll the
of r . A. 0V
m a ect coll
th B. op C. acti B. 0.7 V
A b or,
e ect en ve C. 0.7
D. 8 o emi
a or bia reg mV
µ v tter,
b is: s ion D. Unde
A e bas
o A. res . fined
e
21. W 22.What v isto D. all
is the 23.In e 3.5 V r(s) of 2. How
hich of
order of what B. C. external th many layers
the 24. Th
doping, rang opens e of material
following e
from e of 28.57 V and ab does a
is true for magnit ov transistor
 INDIABIX 1
have? v 4. For w h 100 to cteris s and
A. 1 e what a m a few tics D. All base-
B.2 kind r m kΩ, on of emitter
C. 3 of d, e exce the th junction
D. 4 amplif r t edin specif e s
icatio e e g 100 icatio ab forward
3. Which v r ov
ns kΩ n -
of the e D. A Exceed e
can sheet biased?
following rs n ing
the s? 10. I A. Activ
equipme e y 100 e
active A. On n
nt can C. r o kΩ, B. Cutof
regio B. Off whic
check e f f
n of 100 C. Sm h
the v t
the to a all- regio C. Satu
condition e h
comm few sig n are ratio
of a r e
on- kΩ nal n
transistor s a both
emitte Exceed cha D. All of
? e, b the
rac the
A. C
r f o ing colle
config 100 teri abov
ur o v ctor-
uratio kΩ, stic e
re r e base
n be w excee 11. An = 30 µA. of
nt 7. W
used? a ding example of the
tr hat
A. Volt r 100 abov
a a pnp
age d ran kΩ
c silicon e
B. Cur D. r ge 100Ω
er transistor 15. What
rent e of to a
B. D is a does a
C. Po v resi few
ig 2N4123. reading of a
wer e stor kΩ,
it A. Tru
D. All rs val large or
al 100Ω e
of e, ues A. 100 small
di to a B. Fal
the r wo B. 106 resistance in
s few se
pl ab e uld C. 50 forward- and
kΩ
a ove v you 12. Which D. 400 reverse-
y e get 8. Calculat of the biased
5. In 14. Which
m rs wh e following is conditions
the e configurati
et en minority (are) the indicate
active ons can a
er che current terminal(s) when
regio 6. A transistor
( cki ICO if IC = of a checking a
n, transist set up?
D ng 20.002 mA transistor? transistor
while or can A. Co
D a and IC A. Em using an
the be m
M tra majority = itte ohmmeter?
checke m
) collec 20 mA. r A. Fault
d using nsi on
C. O tor- A. 20 B. Ba y
a(n) stor -
h base µA se devi
. for ba
m juncti B. C. Col ce
A. c for se
m on is lect B. Good
u war B. Co
et - 0.002 µA or devic
rv d- m
er biase e C. 2 D. All e
and m
( d, tr nA of on C. Bad
rev
V the a D. 2 the - ohm
ers
O base- c µA ab e mete
e-
M emitte e ov mit r
) bia 9. W
r is - r e ter D. None
D. A sed hat is
biase B. di C. Co of
ll con (are) 13. Use
d. gi m the
o diti the this table
A. for ta m abov
f ons comp of collector
war l on e
t by onent characterist
d, m -
h an (s) of ics to 16. Determin
for et col
e oh electri calculate e the value
war e lec
a d mm cal βac at VCE = of α when β
r tor
b B. for ete chara 15 V and IB = 100.
C. o D. All
o r? A. 1.01
 INDIABIX 1
B. 101 A. IB / A. C f i ive trans char
C. 0.99 IE o o n B. Cut istor acteri
D. B. IC / m r off creat stics
IE m C. Sat ed? D. All
C C. IC / o p ura A. of
t
a IB n e tion the
- h abov
n D. No r D. All 1930s
ne b i of e
n B.
A. a s c
o of the
s e 30. For
t the ab 1940s
100 e n a
b ab s ov C.
B. 116 B. C t properl
e ove e e
C. o y
s t 1950s
22. How m 27. H biased
o o D.
50 many m ow pnp
l D. carriers o f many
o transist
v 1960s
participate n f indivi or, let IC
e 110 in the - β dual 29. M = 10
d injection c c a pnp ost mA and
w 19. Whi c
process of ol o . silico speci IE =
it ch of the
a unipolar le l n ficati 10.2
h following
device? ct l transi on mA.
t can be
A. 1 o stors sheet What is
h obtained e
B.2 r can s are the
e from the C. C c
C. 0 be brok level of
i last o t
D. 3 hous en IB?
n scale m o ed in dow A. 0.2 A
f factor of 23. What m r a 14- n B. 200
o a curve are the o A. 2 pin into mA
r tracer? ranges of n B. 5
c plasti A. m C. 200
m A. h the ac - h C. 7 c axi µA
a F input and e a D. 10 m
dual- D. 20.2
ti E output m r u
26. W in- ma
o B. α resistance it a m
t hich line
n
dc
for a c rat 31. Wh
C. α e of the pack
p common- t ing at is
ac r follow age?
r base e s (are)
D. β D. E ing A. 4
o a configurati r B. th the
m regio B.7
v
c
on? i er compo
itt ns is C. 10
i 20. Calc A. s m nent(s)
e (are) D. 14
d ulate βac t al of most
10Ω–100Ω , r- part ch specific
e for IC = i 28. I
50 kΩ –1 c of the ar ation
d 15 mA c n
MΩ ol outpu act
and VCE s what sheets
17. Trans B. 50 le t eri
= 5 V. deca provide
istors ct chara sti
kΩ –1 MΩ, de d by
are A. 10 Ω – 100Ω was cs the
C. 10 the C. ele manufa
termi 200 first ctri cturer?
Ω–100 kΩ,
nal B. cal
50 Ω –1 kΩ
devices. A. Ma tic the
D.
A. 2 180 xim s abov
B. 3 C. um C. Ele e
None of the
C. 4 rati ctri
above 32.What is
D. 5 220 ng cal
s βdc equal
D. 24. What i ch
18.Calcul o to?
is the most cteris B. Th ara
ate βdc at r s A. IB / IE
None of frequently tics er cte
VCE = 15 mal rist B. IC / IE
the encountere 25. of a
V and IB w cha ics C. IC / IB
above d transistor β transi
= 30 µA. i ract D. None
configurati d stor? D. All
21.βdc = c t eris of of
on? h A. Act
 INDIABIX 1
th 35. Whic LI 2 10. W l fails uiv
e h B. β hat is to ale
a compon FI re the acco nt
b ent of ER > most unt B. re
o the 1 for C. β
v
S 0
impor
collector tant r the D. Th
R para outpu ev
e current 1. The 2 meter t eni
IC is current
33. List C. β for impe n
called gain for
the types A. 2 re
ampli danc
the the 13. R
of bipolar m < fier e
leakage Darlington efer A. 5V
junction A 1 level
current? connection analy to
transistor B. 4 0 B. 3.7 V
A. M is sis? of the this
s. m R C. 20 V
a A. rb′ devic figur
A. p A. β1· A 2 D. 3V
j B. rc′ e and e.
p (β2 /2) C. 5 D. β
o C. re′ the Calc 14. Yo
n, ri B. β1· m re
feedb
< ulate u have
n t β2 A 11. An ack
1 the a need
p y C. β/ D. 6 emitter-
effect
n β 0 follower valu to
B. I m from
B. p A R is also e of apply
n 2 outpu an
n known VB.
d 5. Which t to amplifie
p, 7. Refe as:
e of the input. r with a
n p r to this A. co
p following m A. hy very
e is figure. bri
n mo high
n referred Determi d
C. n n- power
d ne the eq
p to as the em gain.
e value of 1 2
Which of the following
p, reverse itte
n Av. would you
p transfer r
t D. β1· e
p voltage am A. 49.6
n
C. M
ratio? plifi
(β2 -1)
i 3. Whic B. 5
D. n A. hi er. 2. Which of h of the h- C. 100
n
n o B. hr B. co the parameter D. 595
p, r C. hf m following s
p D. h mo configurati correspon 8. For a
it
n y o
n- ons has ds to re in common-
p ba the lowest a emitter
D. N 6. Which se output common- amplifier, the
34.What o of the am impedance purpose of
is the n base
following plifi swamping is
ratio of e ? configurati
condition er. A. to
the total o A. Fix on?
s must C. co mini
width to f ed- A. hib
t be met to m mize
that of bia B. hfb
h allow the mo gain.
the s C. hrb
e use of n- B. to
center B. Vol D. hob
a the col redu
tag
layer for b approxim lec 4. Refer to ce
e-
a o ate tor this figure. the
divi
transistor v approach am effec
der Find the
? A. in a plif ts of
C. Em value of I E.
voltage- ier. r'e
e itte
1:15 divider D. Da C. to
r-
B. bias rlin maxi
foll
gto
B configura
n
ow mize
1:150 tion? er gain.
C. J pai D. no
A. βr D. No
T e
r.
ne purp
15:1 ose.
D.
A > 12. T of
1 he the
M 0 ab
9. What is
the typical
150:1 P R mode ov
 INDIABIX 1
value of choose? wer 17. What advantag it me A. Th the input and
the A. c is the e that a on n e output
15. W
current o range of Sziklai . D. No ou signals.
hat is uni
gain of a m the the input pair has C. hig tp A. 0º
common- m volta impedan over a her t ut B. 45º
base o ce of a Darlingt inp an C. 90º
ge 21. Refer
configura n common- on pair ut d D. 180º
gain im to this
tion? - base is figure. in
of a pe 25. Which
A. L c configura A. h pu
feedb da Calculate one of the
e o tion? i t
ack nc the value following
s ll A. A g vo
pair e. of Rin(tot). configuration
s e f h lta
t c conn e D. hig s has the
e ge
h t ectio r her lowest input
w s
a o n? c volt impedance?
ag ar
n r A. 1 u A. Fixed
o e e
1 B. c B. 1 r -bias
h gai 18
B. B o C. 100 r B. Com
m n. 0º
et m D. 100 e mon-
s o
w m n 19. What base
t ut
e o 6. A t is the C. Emitt
com o g of
e n typical er-
- mon- a a p follo
n range of
1 b emitt m i ha wer
er a the output se
a a n D. Volta
ampli x impedance .
n s . ge-
fier i of a B. Ga
d e B. l divid
has m common- in
5 C. c e er?
0 o volta u emitter is
s
m ge m configurati sm 26. Which of
C. B s
et m gain, on? all the following
w o o A. 10 er represent(s)
i
e n f Ω th the
curre n
e - 5 to an advantage(s)
nt p
n e 0 10 1. of the
gain, u
1 m Ω 0Ω C. Ga system
t B. 1 in approach
0 it power B. 1 v kΩ is over the r-
0 t k
e o to lar model
a gain, and Ω
n r l 5 ge approach?
to
d D. e t kΩ r A. Thev
5
2 m input a C. 40 th enin'
k
0 it Ω g kΩ an s
impedance.
0 t e to 1. theo
A. hig C. 1
D. U e 50 D. No
h, 0 rem
n r i kΩ ne
low 0 can
d - k s D. 50 of
, be
ef f Ω 0 th
hig used
in o to n kΩ e
h, .
e ll 5 e to ab
low B. The
d o 0 e 1 ov
kΩ e effec
B. hi C. h igh, 0 d t of
g i hig k e 20. What is 24. For chan
h, g h Ω d the unit the
hi h ging
D. low D. 1 of the common-
g , , the
M t paramet emitter
h, h low load
Ω o er ho? fixed-bias
hi i , can
to A. Vol configurati
g g low 2 be
t t on, there dete
h, h , M
u B. Oh is a phase rmin
lo , hig Ω
r m shift
w h h ed
18. The n C. Sie between
 INDIABIX 1
a n e the C. β ne outpu caus C3.
s d out diff D. T of t ed B. an
i put. ere h the signa by open
m a B. two nce e ab l at C2.
p n inp of v ov Vout is C. an
l a uts the e e reduc open
e l and two n ed base
32. T
e y two inp i from -
out he
q z ut n norm emitt
u put volt al. er of
e 31. Under confi
a s. The Q2.
age whi gurati
ti C. tw probl D. a
t s. ch on is
o short
o h frequ em
inp 30. T of A. an ed
n e ently could
uts he the op C2.
. used be en
an foll
C. T e d for and impe
mo owi 34.
h n on impe A. 37. a danc
e del ng When
t e danc 7 out e at
suff co the
r i out e kΩ put. the
e ers ndi bypass
r put matc B. 3.7 low,
fro tio capacit
i e . hing. 7 low
s m n(s or is
D. one A. fixe kΩ low,
bei ) is remove
n n inp d- C. 37 hig
o ng the 8 d from
e ut bia h
limit Ω a
n t and cur s high,
e two ed D. 2.2 commo
w ren B. volt low
out to a 5 n-
e o t ag high,
d put part kΩ emitter
r gai e- high
s. icul amplifie
t k n divi 22. What is
o ar r, the
. 28. The Av der the range of
set voltage
g D. A emitter- ≈ β bia the current
o of s gain
ll follower ope ? gain
b C. em A. incre
o configurati rati A. r
a itte ases.
f on has a ng o
c t 1 r- B. decr
k con foll ease
h impedance 0
ditio ow s.
t e R
at the input ns if er C. has
o a C
it is D. coll very
t b B. R
h o to ect little
B
v be 1 or effect
e
e con 0 fee .
side db for BJT ab 29. The
a R
27.The red ack transistor ov differential
c differe
e
amplifiers? e
acc C. r amplifier
ntial 33.R A. les
urat 23. What produces
e amplif o efer s
e. 1 does the outputs that
q ier to tha
A. h 0 negative are
u has this n1
y R A. com
iv A. o figure B. 1 sign in the
b mon
a n
C
. You to voltage
ri a mod
l e notic 10 gain of
d n e.
e i e e 0 the
d B. in-
n n q while C. ab common-
R phas
t p u servi ov emitter
u
B e
m iv 1 cing e fixed-bias
t 10 the
o al 0 this configurati
d a e ampli 0 on
R volta
e n n fier D. All indicate?
d
e
of ges.
l t D. N that
o the C. the
a B. re o the
n sum
 INDIABIX 1
o u m u lac nn on?
35. R n ect
f t u e A. Ai
efer c ed
t v s co B. Av
to h to
h o t upl C. Ap
this a gro
e l b ing D. None
figure n un
t t e an of
. g d. the
w a e d
Deter e abov
o g v by 40. Refer
mine d e
i e a pa to this
the B. r
n s l ss figure. If an A. 41 43. Which of
value e
p . u ca emitter 6 the following
of VC. p
a pa bypass Ω define(s) the
hich of as l
t cit capacitor B. 5 conversion
the a a
e ors was kΩ efficiency?
following pro c
d wit installed, C. 50 A. Ac
is (are) du e
i h determine kΩ pow
true to ct.
n sh the value D. 50 er to
achieve B. Th c
d ort of Rin(base). 0 the
a good e o
i s Ω load/
overall eff u
v D. rep ac
voltage ect p lac 41. Unde
i input
gain for of l e r which of
A. 2 d pow
the Rs i VCC the
0 u er
circuit? an n wit following
V a B. Ac
A. T d g h conditions
B. 1 ll pow
h RL gro is the
0 y er to
e m a un output
V . the
us n d impedanc
C. 5 D. N load/
e t o d e of the
V 39.For the dc
f be n network
D. 0 common- pow
f co e b approxima
V emitter er
e nsi of y tely equal
36. In a c de amplifier sup
th p to RC for a
common- t re ac plie
e a common-
base o d equivalent d
a s emitter
amplifier, f as circuit, all C. Dc
b s fixed-bias
the input R a o capacitors
configurati
signal is pr v are outp
s c on?
connecte a od e A. eff ut
a A. ro
n ect
d to the uc p 10
38. To ive
A. b d t a RC pow
analyze ly
a an c B. ro er/ac
the sh
s R d i <
common- ort
e. ev t 10 input
L
emitter s.
B. c m alu o RC pow
amplifier, B. effe
ol u ate r C. ro er
what ctiv
le s d s < D. All of
must be ely
ct t in ro the
done to ope
or b div w D. ro abov
determin n
. e id i > e
e the dc circ
C. e ual t uits ro
m equivale 44. The dc
c ly. h . 42. Which emitter
it nt
o C. Th C. not of the current of a
te circuit?
n e o con following transistor is
r. A. le
s eff p nec gains is
D. o a 8 mA. What
i ect e ted less than
ut v is the value
d of n to 1 for a
p e of re?
e Rs s gro
ut ci common- A. 320
r an C. r und
. rc base Ω
e d e .
ui configurati B. 13.3
37. W d RL t p D. co
 INDIABIX 1
k i cui 46. In an er? the low ns Common
Ω r t un- The ab , -emitter
ov hig 51. Which
C. c eq byp inp voltage
e h of
u uiv ass ut -
3.125 Ω the
i ale ed im 48. F 50. T divider
D. follo
t nt. emi pe or the he with
wing
e D. All tter da collec total bypass
5.75 Ω confi
q of bias nc tor dc capacit
gain gurat
45. Whic u the con e is feedb or
of a ions
i ab figu pur Common
h of the ack multi has
v ov rati ely -emitter
following confi stage an
a e on res voltage
should gurati ampli outp
be done l hie isti on, fier is -
ut
to obtain e repl ve. there the . divider
impe
the ac n ace It is a A. su without
danc
equivalen t s in the re var m bypass
e Zo
t of a . mo ies phase of capacit
equa
network? C. R del. fro shift indi or
l to
A. S e A. re m betw vid D. All
R C?
et m B. β a een ual of
A. Fix the
al o C. β few the volt ed abov
l v re oh input ag - e
d e D. Ib ms and e bia
c to outpu gai s 52. Ref
47. W ns
s a me t co er to
hich B. su
o ll go signal m this
ur of m
e hm s. m figure.
c the of
l s. A. 0º on Find
e follo dB
e An B. 45º - the
s win vol
m oh C. 90º e value
to g is tag
e m D. 18 mit of
z (are e
n me 0º ter
er ) gai Rin(base).
t ter
o true 49. A capacitor despi
s ca
B. R reg commo is ke
nn
e ardi n- A. no the
b ot suppl
p ng collect pu
y be y
l the or rp
p us volta
a inp amplifi os
a ut ed ge.
c er has e,
s imp to D. to
e input si
s eda me maxi
a nc
e nce as mize
ll resist e
d for ure A. 420 ampl
c ance, it
freq the Ω ifier
a current is
b uen sm gain.
p gain, B. 50 sh
y cies all- kΩ
a and voltage or 54.For BJT
in sig C. 940
c te amplifiers,
t nal gain.
it the
A. hig Ω d the gain
h mid ac
o h, D. ou typically
r e ran inp
hig t ranges from
s ge ut 100.8Ω
h, by a level just
b s 100 im
lo RE less than 1
h kHz pe 53.For a
y w . to a level
o of a da common-
a B. hig B. to that may
r BJT nc emitter
s h, re exceed
t tran e. amplifier, du
h low 1000.
- sist D. A the ce
o , A. volta
c or ll purpose of noi
rt low ge
i o the emitter se.
- am C. hig B. curr
f bypass
c r plifi h, C. to ent
 INDIABIX 1
C. i n xe of 107 58. Whic t amplifier is ov sinusoidal ac
m - d- kΩ. The h of the var 0 e analysis of
p e bia input following ies V. The transistor
e m 61. What
s signal is is (are) fro trouble networks?
d it is re equal
12 mV. true m could be A. Smal
a t caused by to in terms
co The regardin a l-
n e of h
m approxim g the fe signa
c r parameter l
mo ate output w
e B. C s? B. Larg
n- output impedan oh
D. Al o A. hre e-
em voltage is ce for ms
l m / signa
itte (common frequenci to
of m hoe l
r - es in the mo
th o B. (hr C. Smal
an collector) midrange re
e e +
n d A. 100 kHz tha l- or
a - 1) large
vol 8.92 V of a BJT n2 /
b e -
o tag B. 1 transisto M hoe
m e- 1 A. an sign
v r Ω. C. hie
i 2 ope al
e div amplifier C. An –
t m n D. None
ide ? oh (hr
55. The t V C4. of
r A. T m e /
loaded e C. 1 B. an the
h me hoe abov
voltage r 2 ope
wit e ter )(1
gain of v m n e
h ca +
an o V C2.
by o nn hfe
amplifier l D. 8. C. an
pa u ot )
t 9 op
is always ss t be D. hfe
m en
more a ca us E. no
V p ba
than the g pa ed ne
u se-
no- load e cit to of
t em
level. - or me itte th
i
A. T d D. Co as r of e
m
ru i m ur Q1. ab
p
e v mo e D. a ov
e
B. F i n- sho e
d the
al d em sm rte
a 62. What
s e itte d
n all- is the
e r r C4.
c sig controlling
56. W w vol nal current in
e 60. What
hich of i tag ac a
t is the limit
e- i out common-
h of the
the div s put base
efficiency
ide im configurati
defined by
following b r pe on?
p = Po / Pi?
configura y wit da A. Ie
u A. Gr
tions has p ho nc B. Ic
r eat
a voltage a ut e. C. Ib
e er
gain of – s by D. All D. No
l tha
RC s pa of n1 ne
y
/re? ss the B. Le of
A. Fi c ca ab ss th
r
x a pa ov tha e
e
e p cit e n1 ab
s
d- a or C. Alw ov
i 59.Refer
bi c ays e
57.An s to this
a i 1
emitter- t figure. The 63. Which
s t D. No
follower i output of the
c o ne
amplifier v signal from following
o r of
has an e the first technique
m C. F the
input . stage of s can be
m i ab
o impedance B. I this used in the
 INDIABIX 1
64. The u ampli Darli a out 1 1 l
inpu c fier. ngton s and a 0. 4 o
t ti A. sm pair e low 5 n
imp v alle provi d input g
eda e r, des impe
, beta 68. A
nce sm danc a
m Darlin
of a alle for e. s
ill gton
BJT r input D. a low
i pair
am B. sm resista amplif t
h alle nce.
plifi ier volta h
e r, A. m
er has ge e
n lar ul
is A. high gain
r ger ti
pur y and g
C. lar pl
ely in s inp a a
ger ic
natu , ut high t
, at
re h io im input e
sm
and e n, pe impe -
all
can n er d da danc t
vary r D. lar e nc e. o
fro y ger cr e -
m a s , e an
few D. N lar a d FET 2. W C l
to o ger s hig DEVI hat is the .D t
. n e h level of a
A. r e 66. R d
CES drain g
volt
e o efer B. m ag current ID e
1.
si f to u e for gate-to-
Which
st t this lt gai source i
of
iv h figure i n. voltages s
the
e, e . If an p B. low follow
o a emitt li v
inp ing
h b er c a
ut rating
m o bypa a l
v im s
s, ss ti u
e pe appea
m capa o e
e n da r(s)
65. The citor nc .
g , in
was A.
o i e the
the install an
h n specif on
sou ed, d e-
m c icatio
what fou
s rce r low n rth
resi would volt
B. c e sheet
sta the ag
a a for an
nce new e
p s FET?
an Av e gai
a Voltage
ci d/o be? d n. s between
ti r the load C. di C. a specifi
v resi vi volt c
e, sta si ag termi
m nce o e nals
ic , n, gai B. Cu
ro the d n rre
fa les e of nt
ra s cr ab lev
d the e els
s, Po s A.
ove A. 4.96
fa w s
rall D. A
ra B. 125
gai e 0.
d C. 398 r
n 25
s D. 600 d
of B.
C. in i
an 67. A
d
 INDIABIX 1
the pinch- off o – e 9. Referrin device. d
VGS less e o v 1 g to this The FET
than 8. W transfer
n sev e . curve, is a
(more hat is the
negative d era 0 determine ID A. bip
s l 6. Refer n ratio of ID /
than) the at VGS = 2 V. ola
o hu to this A IDSS for VGS
pinch-off r,
n ndr portion of d = 0.5 VP?
level? bip
V ed a c ola
A. z
MΩ specificat D. N r
e D

r S ion o B. bi
5. Which of sheet.
o D. U n po
the Determin e
a n lar
d following e the o
m ,
e applies to a values of f
p un
fi safe reverse- t A.
e ip
r n MOSFET gate- h ola
e e handling? source e 0.444 mA r
s d A. Al voltage a B. C. uni
B. ID wa and gate b pol
4. W ys o 1.333 mA
current if ar,
SS
hat is the pic v C.
C. N the FET bip
range of k e
e was ola
an FET's up 0.111 mA
g forced to 7. At r
input the D.
at accept it. which of D. uni
impedan tra
iv the pol
e ce? nsi 4.444 mA ar,
A. 1 following
v sto 10. Which uni
0 condition
al r of the pol
Ω (s) is the
u by following ar
depletion
e the controls
t region 13. Referr
D. U ca the level of
o uniform? ing to this
n sin I D?
d 1 A. N transfer
g. o A. VGS curve.
ef k A. 2
B. Po b B. VDS Calculate
in Ω wer should
5
e B. 1 V i C. IG (using
always be d a D. VDG Shockley'
d k
off when c, s s
Ω network 11.It is the
3.What is – B. V equation)
the changes insulating
t 2 D VGS at ID =
level of made. layer of
o 0 S 4mA.
IG in an C. Al 0 > the
1 MOSFET
FET? wa n 0
0 constructio
A. Z ys A V
k n that
e tou d C. V
r Ω accounts
ch c D
o C. 5 for the very
gro B. – S
a 0 desirable
un 2 =
m k high input
d 5 V
p Ω V impedance
bef P
e ore d D. N of the
r t c, o device.
ha
e o 1 n A. Si A.
1 ndl
s 0 e O
0 ing
B. E m o B. Ga 2.54 V
0 the
q A f As B. –
k de
u d t C. Si 2.54 V
al Ω vic
c h O2 C. –
to D. 1 e.
C. – e D. HC 12
ID M D. All a
6 l V
C. D Ω of b
V D. Un
e the o 12. The
d def
p t ab v BJT is a
c, ine
 INDIABIX 1
B. o T uce regi s is is a A. 2 FETs has
n C. e the 1.66 V on referr controlled B.3 the lowest
e- n inp B. – to ed to device. C. 4 input
h h ut 1.66 V the as The JFET D. 3 impedance?
al a imp C. left the is a or A. JFET
f n eda of region - controlled 4 B. MOS
C. th c nce 0.66 V the . device. FET
re e To D. – 25. Refer
pinc A. sat A. volt deple
e- m prote 0.66 V to the tion-
h- ura age
fo e ct the tion , following type
18.T off
ur n MOS volt figure. C. MOS
he locu B. cut
th t- FET off age Calculate FET
s t for C. o ate, B. volt VGS at ID = enha
D. N y both h 0.616 mA coll age 8 mA for k ncem
o p polari m ect , = 0.278 × ent-
n e ties ic 20. Whic or, cur 10–2 A/V2. type
e M h of the emi ren D. None
To D.
increase A
of O following tter t of
the input ll
th S transisto C. cur the
imped of B. bas
e F th r(s) has ren abov
e,
a E ance (have) t, e
D. No e coll
b T depletio vol
ne a ect
o D. B n and 28. Whic
of b or, tag
v J enhance h of the
the o emi e
e T ment following
abo v tter D. cur A.
e types? ren applies to
15. T 16. W ve C. gat
A. B e, t, MOSFETs?
he hat 3.70 V
17. R 19. Refe cur A. No
tran is J dra B.
eferri r to the T in, ren direc
sfer the following
ng to B. J sou t 5.36 V t
curv pur curves.
the F rce C. elect
e is pos Calculate 24. How
follow E D. gat rical
not e of ID at VGS many
ing T e, 7.36 V conn
defi add = 1 V. terminals
transf C. M dra D. ectio
ned ing can a
er O in, n
by two MOSFET
curve, S em 2.36 V betw
Sho Zen have?
deter F itte een
ckle er r 26. The
mine E
y's dio T level of
the gate
equ des 22. Which VGS that
level D. N termi
atio to of the results in
of VGS o nal
n the following is ID = 0 mA
when n and
for MO e (are) the is defined
the the
the . SF o terminal(s) by VGS =
drain chan
A. J ET f of a field- A. VG
curre nel
F in t effect
nt is S(of B. Desir
E this h transistor
20 f) able
T figu e (FET). B. VP
mA. high
B. d re? a A. Dr C. VD input
e b ain S impe
pl o B. Ga D. No danc
et v te ne e
io e C. So of
A. C. Use
n- urc th
21. The s
ty e e
p 8.167 mA three meta
D. All ab
e B. terminal l for
of ov
M s of the the
the e
O A. T 4.167 mA JFET gate,
ab
S o C. are the 27. Which drain
ov
F r , and e of the , and
E e 6.167 mA A. g following sour
A.
d D. 23. A BJT
 INDIABIX 1
c e ve A. R labl Ω nel E emitt
e r e e C. 108 B. p- er
c o 31. Which
d to Ω cha R B. com
of the
o v
following is
u me D. 1011 nn S mon-
n o c as Ω el colle
lt (are) the e C. p-n 1. A ctor
n ure
s advantage( d 34. R ch com C. com
e
C. I s) of VMOS c efer an mon- mon-
c for
over h to the nel gate base
ti G
the
i MOSFETs? a follow D. n- ampl D. emitt
o BJ
s n ing cha ifier er-
n T.
z n chara nn is follo
s A. β
e el cteris el simil wer
D. A
r r D
tic an ar in
ll 2. The
o e C
curve d confi
o B. I theoreti
D. A si . p- gurat
f cal
ll st D
Calcu cha ion
t efficien
o a S nn
h late to
f n S el cy of a
e C. V the whic
t c
a resist
h e P h
b ance class D
o
e Highe D. A FE BJT
a ll of the amplifie
r current T ampl
v o FET r is
b and power ifier?
e
o rati f at A A. co
A. 75%.
VGS = B. 85%.
29. At v ngs t M m
which of e h –0.25 C. 90%.
C. F PL m
the a e V if ro D.
30. Whic on
following st a = 10 IFI -
h of the b kΩ. 100%.
is the e
following o 3. A follower
level of r
represen v common-
VDS equal s
t(s) the e
to the w source
cutoff it 4. Refer to this figure. If R6
pinch-off region 33. Which amplifier is
voltage? c of similar in opened, the signal at the
for an hi drain of Q1 WOuld
A. W FET? the configurati
h n foll on to
A. I g
e owi which BJT
n
D ti
= ng A. amplifier?
ID m
0 inp A. co
b e
m ut 1.1378 kΩ m
e D. A
A im B. mo
c ll
B. V pe n-
o o
da 113.78 Ω ba
m G f
nc C. se
e S t
= es B. co
s h
V is 11.378 Ω m
e e
not D. mo
q P a
C. I vali n-
u b
d 11.378 kΩ coll
al G o
= ect
to v for
0 35. Which or
ID e a
D. A of the C. co
JF
SS
ll 32. H follow m
B. W ET
o and ing is mo
h ?
f - (are) n-
e A. em
t held not
n itte
h instr an
V 1010 Ω r
e ume FET?
GS
nts B. 1 D. em
is a A. n-
0 itte
z b are 9 ch
o avai an r-
 INDIABIX 1
A. c r 5. Refer ativ A. 17 , B. 2.5
o i to this e 6 calcu mS
m n figure. pe mV late C. 2.75
m g Find the aks p-p gm mS
o value of . B. 88 D. 3.25
for
n- t V D. C. clip mV mS
VGSQ
e o pe p-p = –
m d
A. – C. 48 1.25 15.Ref
itt t on
7.29 mV V. erring
er the
h B. – p-p to this
B. c i po
7.50 D. 24 figure,
o siti
s C. – mV calculat
m ve
m 8.05 pe p-p e the
f D. – value
o aks 14. R
n i 8.55 . of RD if
g eferri
- A. 2 10.Refer D. 0 the ac
u ng to
c 0 to this Vp-p gain is
r the
ol V figure. If A. 2 10.
e 11. Use follow
le B. 1 Vin = 1 V m Assum
, the ing
ct 1 S e VGSQ
p-p, the figure
o V following = ¼Vp.
output
r c C. 1 equation to rd = 19 kΩ.
voltage [
C. c a 0 A. 2
Vout calculate ]
o l V | | .
m would gm for a 2
c D. 9
m be JFET
u V A. k
o l having IDSS
B. Ω
n- a 6. A BJT = 10 mA,
b C. B. 2
t is a VP = –5 V,
a D. .
e controll
s and VGSQ = 4
ed
e A –2.5 V. 2
device.
D. c v A. c
o k
u
m Ω
f rr
m C. 2
o e A. u
o .
r n n
n- 6
t d
g 2
y B. v i
at
ol s
e o k
ta t
s Ω
9 g o D. 2
. = e r .
7. Referri t 8
R 5 ng to e 2
e 8 this d
f µ figure, . k
e S calculat B. c Ω
r . e Av if li
p 16.W
p her
s e. e e
e C. re d do
. ma o yo
B. d in n u
e the t get
c sa h the
r me e
A. in lev
e . n
cr el
a D. dist e
e of
s ort. g
a gm
 INDIABIX 1
and rd A. o a ac figure. If C4 curve, the
the
for an biasing p p an opened, level of gm.
FET e p aly the signal A. less
transist n l sis voltage at B. same
or? c i D. All the drain of C. great
12. For ir e of Q1 WOuld er
what arr
an c d the
A.– value of 26. What is
ID is gm ge u ab
2.85 equal to ov the typical
me it s
B.– 0.5 e value for the
nt f i
3.26 gm0? input
B. fro o g 19. An A. 1.8
C.– A. 0 mA impedance Zi
m r n FET is a 5
2.95 B. 0.25 IDSS for JFETs?
the d a controlled kΩ
D.– C. 0.5 IDSS A. 100
spe c l device. B. 1.9
3.21 D. IDSS kΩ
cifi a a 2
A. cur
cati n n A. incr kΩ
B. 1 MΩ
ren
on a eas C. 10
d t C. 2.0
she l e. MΩ
B. vol 5
et y B. dec kΩ D. 1000
l tag
C. fro s rea MΩ
o e D. 2.1
m se.
i a 5 27. MOSFET
the 20. What C. re kΩ
s d s make
cha is the input ma
B. t C. t better
rac resistance in 24. Which
o o power
teri (Rin(source)) the of the
i sa switches than
stic of a following
s s c me BJTs because
common- is a
D. All o r . they have
gate required
of l e D. dist A. lower
amplifier? condition
the a a ort. turn-
A. Rs to simplify
ab t t off
e B. (1+ the
ov e gm) equations times
e t .
|| for Zo and
h a B. lower
17. The class Rs Av for the
e on-
D amplifier C. 1/ self-bias
d s state
uses what gm configurati
c h resist
type D. no on?
b o ne A. rd ance.
8. A of i
13. = r of ≤1 C. a
common- p transistors? a
Refer 2 - t the 0R
drain p A. JFE s
to this 0 - ab positi
amplifier Ts i
D
figure. m c ov B. rd ve
is similar n e
If Vin V i =
in g
what r 21.There RD temp
configura a
is the c is a C. rd eratu
tion to r
output u ≥ re
which r inversion
voltag i 10 coeffi
BJT a between
e? t RD cient.
amplifier? n gate and
e D. No D. all of
B. B y is (are) the g source in a
q ne the
J o function(s) e source of
T f u follower. abov
of the m th
s t i A. 0 e
coupling e e
C. M h v B. 90
capacitors n ab 28. When
O e a C. 180
C1 and C2 t ov VGS = 0.5 Vp
S a l D.
in an FET fr e gm is _
F b e
circuit? o maximum
E o n none of the 25. The
A. to m value.
T v t above steeper
cre t A. one-
s e f the slope
ate h 22. Refer fourt
D. a o of the ID
18. What an e to this h
n r versus VGS
 INDIABIX 1
B. o FE A. 1 C. 5 m y a SFE
n T 0 m p l Ts
e- C. D- m A. l d M
h MO A D. 2.5 o u O
al SF . mA A. B.
f ET B. 7 . B. C.
C. th . C. D.
re 32. O 5 D.
e- n m
fo which A 40.
ur of the . eferring
th follow figure,
s ing 23. calculate
produc 34. C
A. 2 para i =
29. MOSF Referrin e which lass
m meter f
ET g to this digital D
S s y
digital figure, gates? ampl
B. 3 does o
ifiers
switch find Zo inverters
m rd s
diffe
ing is S have
20µS. = NOR
used gates r
C. 4 no or from
to NAND
m little all
gates
S impac othe
all of the
D. 5 t in a r
above
m sourc clas
S 30. ses A.
e-
31.W follow Referri of
ampl B.
hic er ng to
h config ifiers
the C.
uratio beca
typ transfer use D.
e n?
A. Zi
charact the
of 41.
B. Zo eristics outp
FE eferring
C. Av shown ut
Ts figure,
D. All tran
can below, calculate
of sist
op calculat =
ors
era the e gm at are
te ab
VGSQ = – oper
wit @o
1 V. ated
h a ve
as
gat
33. R swit
e-
efer che
to-
to s.
sou
this of their
rce A.
figure very low
Q-
. For input
poi B.
midp capa
nt
oint citan
val C.
biasin ce.
ue
g, ID of their
of D.
would high-
0
be frequ
V?
ency 42.
A. J
F resp
E onse
T capa
B. E biliti <
- es. Z
M D. th
O ey .
S e A.
 INDIABIX 1
35. Refer to this figure. If R7 were to A. Vout would 8 B. high
decrease in value, Vout would B. A. 10 kΩ input
C. 0 impe
M 52. Referri
D. danc
Ω. ng to this e
44. B. 1. figure, C. low
eferring 5 calculate powe
figure, k Zi for yos = r
for Ω. 20 µS. cons
A. 362.52 Ω A. 99 C. 3. A. inc Assume umpti
B. 340.5 Ω 0 3 rea VGSQ = on
C. 420.5 Ω m k se. −2.2V. D. All of
A.
increase. V the
D. 480.9 Ω Ω. B. de
B.
decrease. remain the same. distortB. 1.1 abov
D. 48 cre
C.45.The more 3 e
M as
D.horizontal the V p- e.
Ω. 54.CMOS
characteristic p
36. Refer to this figure. If ID = 4 mA, find C. re
48. W digital
curves
the valueon the
of VGS. C. 2. ma
hich switches
drain 8 in
of use
characteristics, V the
the A. n-
the the output p-p sa
follo cha
impedance. D. 99 me
wing nnel
A. less 0 . A.
V is and
B. same D. dis
(are) p-
C. greater p-p tor 300.2 Ω
relat t. cha
47.R B.
46. Refer to this ed nnel
figure. If gm = efer 50. The D-
to 330.4 Ω
A.4000 mS10.8and
V a to input MO
depl C.
B.signal 6 Vof 75 this resistance SFE
etio
C.mVrms is applied figur at the gate Ts
–0.7 V n- 340.5 Ω
to the
–6 V gate, e. of a FET is in
D. type D.
calculate the p- The extremely seri
MO
er(s) has (have)
p a output appr A. hig 350.0 Ω es.
SFE
een input and output signals?
voltage. oxim h. B. n-
Ts? 53.FET
ate B. low cha
VGSQ amplifier
valu . nnel
can s
e of and
be 51. Determi provide
Rin is p-
nega ne the A. ex
tor determines the voltage gain and input resistance of a common-gate amplifier? cha
43. tive, value for cell
zero, RD if the ac nnel
efe ent
or gain is 8. D-
rrin vol
posit MO
g tag
gure below, determine the output impedance for VGS
ive. e SFE
to
gai Ts
thisB. g m be
larg n in
figu m a
er para
re, c ll
tha llel.
obt a e
n C. n-
ain n r
b t IDSS cha
g
. nnel
for e h
g a D. All and
ID A. 1.5
of p-
6 r n 1
e g the cha
mA kΩ
ab nnel
. a m B. 1.6
ov E-
t 0 5
e MO
e . kΩ
r SFE
C. ID 49. Refer to C. 1.8
c Ts
o this figure. 5
r a in
If C2 kΩ
n seri
s Shorted, D. 2.0
 INDIABIX 1
e Μ 7 in value. 62. E the a dc
s S kΩ, amplitud - ir meter
. B. 1 4 e a little, MOS po C. apply
D. n 0 mS the FETs we ing a
- 0 D. No signal are r test
c µ ne voltage gener ha ac
h S of at the ally ndl signa
a t the source used ing l
n o abo of Q2 in . D. All of
n 1 ve Would switc the
63. F
e 0 hing abov
57. What or an
0 A. 2.2 e
l limits the applic FET
0 kΩ
a signal ation small 64. The E-
µ B. 1.2
n amplitude s - MOSFET
S kΩ
d in an beca signa is quite
C. 1 C. 600
0 analog use l popular
kΩ
p 0 MOSFET of their ampli in
D. 100
- 0 switch? very low fier,
kΩ
c µ A. the input one
h S swit A. in 61.A JFET capa could applications.
a t ch cr cascade citanc go A. digital
n o inp e amplifier e. about circuit
n 5 ut a employs of their troubl ry
0 cap s A. 2 thres B. high-
e esho
0 acit e. co hold frequ
l oting
0 anc B. d mm char ency
E a
µ e e on- acter C. buffer
- circui
S B. VGS cr gat ing
M istic t by
D. e e D. All of
O (th) (VGS(th) viewing
C. the a am the
S ). the
10000 µS swit s plifi abov
F e. of their circui
to 100000 ch's ers. e
E C. r high- t
µS po B. 2
T e frequ boar 65.Ref
wer co
s 56. Calc m mm ency d for erring
han
ulate gm ai on- respo poor to this
dlin
i and rd if n sou nse solde figure,
g
n yfs = 4 t rce capa r calculat
D. VDS
mS and h am bilitie joints e Av if
p yos = 58. Input e plifi s. B. usi yos = 20
a 15ΩS. resistance s ers. D. of ng µS.
r A. 4 of a a 1 A. – kΩ
a m common- m Common- 3.48
drain e. 67. In a
l S gate and B. –
, amplifier is D. di 3.56 common-
l 1
6 RG st source
e A. com C. –
6 || o 3.62 amplifier, the
l mon-
. RIN( rt D. – purpose of
. sour
7 . 4.02 the bypass
gate). ce
55.What k RG capacitor, C2,
B. 60. Refe ampli 66. Referri
is the Ω + is to
r to this fier. ng to this
range B. 4 RIN( A. 2.9 A. keep
of gm figure. If 1 figure, 2
m the
for gate). VGS = –6 comm calculate kΩ sour
S
JFETs C. RG. V, on- Zo if yos = B. 3.2 ce
,
? D. RIN( calculate gate 40µS. 0 effec
1
A. 1 5
gate). the and 1 kΩ tively
µ k 59. Refer value of comm C. 3.2 at
S Ω to this RS that on- 5
to C. 6 Figure. If will drain kΩ
1 6 Vin was provide amplif D. 3.7
0 . increased this ier. 5
 INDIABIX 1
A. a single- B. t is volt gain will occur at a .
stage con age is 20 3. For A. 15.8
19.2 V 46.13 Hz Hz
nect for dB. which of
B. – C. ed the A. the
6
to a rat following
V 238.73 Hz
5- ed 1.225 mV frequency
C. D.
spe out B. region(s)
aker put can the
10.8 V 1575.8 Hz
. if 12.25 mV coupling
D.
5. The Cal the C. and
30 V smalle cula am bypass
122.5 mV A. 1.2.
r te plifi capacitors
70. If ID = D. B. 2.4.
capaci the er no longer
IDSS / 2, gm C.
tive inp volt be
= eleme ut age 1.225 V replaced
A. 1 a 4.4.
nts of c u BJT 8. A by the
B. 0.707 g D.
the r t. amp 3- short-
C. 0.5 desig o D. p lifier dB circuit
u 8.8.
n will n r at drop approxima
d o 69. Refer to
deter . the in hfe tion?
BJT AND FET mine B. p v low- freq this figure. A. Lo
FREQ the r i freq uen If ID = 4 w-
cutoff o d uen cy mA, IDSS = fre
UENC freque vi e cy 16 mA, and qu
c defi
Y ncies. d cuto ned VGS(off) = –8 en
A. low e o V, find VDS. cy
RESP ff? by
a u B. Mi
B. mid A. fα
ONSE d p d-
C. hig fβ
c li fre
h B. C.
p n qu
1. A D. 2
6. Wh at g en
change C.
at is h t cy
in
the to o C. Hi
frequen D.
range g t gh-
cy by a
of the r h fre
factor
capac o e qu
of
itor u l en
n o cy
Cds?
d. a D. All
is A.
C. p d of
equivalent .
to 1 0.01 r the
octave. to 0.1 o 68. ab
A. 2 vi Refer to ov
pF
B. 10 d this e
B. 0.1
e figure.
C. 5 to 4. Determi
c
D. 20 1 The ne the
o
pF voltage lower
2. What u
C. 0.1 gain is cutoff
is the pl
to 1 frequency
ratio of in
nF of this
the g
D. 0.1 to network.
capacit
to 1 th
ive
F e
reactanc
e XCS to 7. An in
the input amplif p
resistanc ier
e RI of rated
the input at 30-
RC W
circuit of outpu
 INDIABIX 1
9. A he high- volt gai decib frequency mon-
20. Deter base
n larg frequ age n in els. response
mine the
am er ency A. – t a single- for the C. Com
break mon-
plifi cap regio 30.01 dB o stage BJT, complete
frequency colle
er aciti n? B. – by how system?
1 for this ctor
rate ve A. Inte 20.0 dB much does A. low
0 circuit. D. All of
d at ele rele C. – the base est
30- me ctro 13.01 dB p voltage B. mid the
W nts de D. – F lead the dle abov
out of cap 3.01 dB B. 1 input C. hig e
put the acit t voltage at he
13. By 23. What
is des anc o the cutoff st
what 1 magnitude
con ign es frequency D. No
factor 0 voltage gain
nect will B. Wiri in the low- ne
does an n A. corresponds
ed det ng frequency of
cap audio F to a decibel
to a erm region? the
acit level C. 1 15.915 Hz gain of 50?
5- ine A. Ab ab
anc change if t ove B. A. 31.6238
spe the out B. 316.228
es the o
aker cutoff 0º 159.15 Hz C. 3162.38
C. Mill power 1
. frequenc 0 B. 45º C. D. 31623.8
er level
Cal y. F C. Ab
effe changes 24. By what
cula A. l ct D. 1 out 31.85 Hz
from 4 W other
te o cap t 90º D.
to 4096 name(s) are
the w acit o D. No
W? the cutoff
inpu B. m anc 1 ne 318.5 Hz
A. 2 frequencies
t i e 0 of
d B.4 the 21. What in a
pow D. All F
C. h C. 6 ab is the ratio frequency
er of
i D. 8 ov of the response plot
req the 16. For
g 14. For e common called?
uire ab the low-
d h ove audio logarithm A. Corn
frequenc 18. What
systems, of a er
for 11. W y is the
12.Th number to frequ
full hic the respons normalized
e its natural ency
pow h of reference e of a gain
input logarithm? B. Brea
er the level is BJT expressed
powe A. 0.435 k
out foll generally amplifier in dB for
r to a B. 2 frequ
put owi accepted , the the cutoff
devic C. 2.3 ency
if ng as . maximu frequencie
e is D. 3.2 C. Half-
the ele A. 1 m gain s?
10,00 powe
pow me m is where A. –3 22. Whi
0 W r
er nts W . dB ch of the
at frequ
gain is B. 1 A. R B. +3 following
1000 ency
is (ar W dB configurati
V. B
D. All
20 e) C. 1 = C. –6 ons does
The of
dB. imp 0 0 dB (do) not
outpu the
A. 3 orta m Ω D. – involve
t abov
m W B. R 20
nt powe the Miller e
W D. 1 dB
in r is
C effect
B. 3 0 =
det 500 19. Which capacitan 25. The
0 0 0
erm W, of the low- ce? frequency
m m Ω
inin and frequency A. Co response
W W C. R
g cutoffs m of
C. 3 the
the 15. What E
m a
0 outpu = determined
gai is the on transformer-
0 t 0 by CS, CC,
n of range of - coupled
m impe Ω or CE will
the the e system is
W danc be the mit
sys capacitor 17. In predomina calculated
D. 3 e is ter
tem s Cgs and the input nt factor in primarily by
W 100Ω. B. Co
in Cgd? RC determinin the stray
Find m
10.T the A. 1 circuit of g the low- capacitance
the
 INDIABIX 1
between 27. I ct ose ap low-
the turns n C. Ba d of is acit frequ
of the the se bot equivalen an ency
primary hyb bul h t to 1 ce regio
and rid k eve decade. Cw1 n?
secondar π D. All n A. 2 B. The A. Ab
y or of and B. 10 transit out
windings. Gia the odd C. 5 ion 0º
A. lo col ab har D. 20 capac B. 45º
w ett ov mo itance C. Ab
e 31. W
B. m o nics (Cbe / out
hic
id mo 28. W . Cqs) 90º
h
C. hi del, hat is It is C. Mill D. No
of
g whi the co er ne
the ca of
h ch ratio mp foll pa the
26. logea on of the ose owi
e d cita ab
= outpu ng
onl nc ove
log10a of t ca e
A. the volta y of pa 33. In
CM1
foll ge to odd cito the -
D. All
2.3 owi the har rs frequ
of
B. ng input mo is ency
the
do volta nic (ar ab regio
2.718 es ge at s. e) ov n, the
C. e rb the It is incl e capa
D. incl cutoff co ud citive
1.414 ud frequ mp 32. In elem
ed
e? encie ose the ents
in
A. B s in a d input of
Ci
a norm only RC impor
for
s alized of circuit tance
the
e frequ eve of a are
hig
s ency n single the
h-
p respo har - intere
r fre
nse mo stage lectro
e qu
plot? nics BJT, de
a en
A. 0.25 . by (betw
d cy
B. 0.50 The how een
i reg
C. 0.707 har much termi
n ion
D. 1 mo does nals)
g of
nics the capa
r 29. W a
wav base citanc
e hich BJ
efor volta es
s of the T
ms ge intern
i or
follow are lead
s FE al to
ing also the
t T the
state squ input
a am active
n ment are volta
plifi devic
c s is wav ge for
er? e and
e true es. frequ
A. I the
for a encie
30. A n wiring
squar s
chang p capac
B. B e- much
e in u itance
a wave larger
s freque t betw
signal than
e ncy by w een
? ir the
c a the
i cutoff leads
o factor
of n frequ of the
n
A. It is g ency netw
t
comp c in the ork.
a
 INDIABIX 1
A. lo o thr B. s n e- wave The above
w n ee a g input is output reference,
B. m e trig w a applied voltage is and a
id ger to m to this most supply of
C. hi t poi ot p amplifie likely to ± 12 V,
g r nts h li r. be the output
h i . w fi will be
D. non a e A. 20
34.What g A. V(out)
e of v r V.
is the g
the ef . max
ratio of e B. 12 –
abo or B. a B.
the r V. V(out)
ve. m d
output p C. 10
. i max
power to o 2. Refer to A. a V. C. –1.41
C. si f
the input i the given squ D. 15 V
n f
n figure. This are V.
power at u e D. +1.41
the cutoff t circuit is s r wa 8. A V
frequenci . known as oi e ve. comparato
B. a B. a 10. In a(n)
es in a d n r with a
c al t tria when the
normaliz Schmitt
o w i ngl input voltage
ed trigger has
m a a e exceeds a
frequenc A. tw
p v t wa specified
y o
a ef o ve. reference
response tri
r or r C. a voltage, the
plot? A. a gg
a m . sin output
A. 0.25 non er
t . C. a e changes
B. 0.50 inv le
o D. tri n wa state.
C. 0.707 erti ve
r a i ve. A. integ
D. 1 ng ls.
w n n D. no rator
am B. a
gl t out B. differ
fas
it e e put entiat
plifi t
BASI h er.
w g .
re or
C OP h a r sp
B. a 6. Refer to
y v a on
AMP s
diff
ef t the given
ere figure. se.
CIRC t
ntia
o o
What is C. a
e r r
UITS r
tor.
m . the output slo
voltage? w
. D. a
1.A e C. an res
s po
Schmitt s int 4. Refer
u ns
trigger i egr to the m
is s ato given e.
m
A. a . r. figure. D. on
i
c C. a D. a This A. 2V e
n
o su circuit is B. –2 trig
g
m c mm known as V ge
a
p o ing C. r
m
m am lev
a p
p plifi +Vsat el.
r li
a a er. fi D. – 9. Refer to
t r 3.The e Vsat the given
o a output of r 7. If an op- figure.
r t a Schmitt . Determine
A. a amp
w o trigger is n comparato the upper
5. Ref
it r a o r has a trigger
er to
h w A. pul ni gain of point.
the
o i se n 100,000,
given
n t wa v an input
figure
l h vef e difference
.A
y or rti of 0.2 mV
m. squar
 INDIABIX 1
C. s A. 1 he pl lied ermin ste A. su s.
u 5 first ifi bet e the res m B. the
m . inp e we outpu is. m differ
m 2 ut. r en t er ence
in m 18. Refer
B. sel D. c the volta B. no betw
g V to the
ect o inp ge. nz een
a / the m given er
uts two
m μ hig p figure. o-
. volta
pl s hes a With the le
Wh ges.
ifi B. 1 t r inputs ve
at C. the
er . val at shown, l
is area
D. c 5 ue o determine de
the unde
o 2 inp r A. 1V the output te
out ra
m V ut. B. –1 voltage. ct
14. A put curve
p / C. sel V or .
a μ n volt
ect C. C. av D. the
r s the op- ag
er rate
at C. 1 low am e? +Vsat agi
p A. 1 of
o . est D. – ng
r has 3 cha
5 val Vsat a
2 ue an V nge
m
11.R ope B. – 16.A good of
m inp plif
efer V ut. n- 1 exampl the
ier
to / loo 3 e of inpu
D. sel D. su
the μ ect p V hystere t
m
give s the gai C. 1 sis is volt
m
n D. 1 last 3 a(n) age.
n of er
figu 5 inp 90, V A. AM
re. rad 24. Refer to
. ut. 000 p-
an
If io. the given
2 . p
d
Vin 13.W D. 2 B. the figure.
V Vsat
= 5 hat 6 rm Determine
/ =
circuit V ost no the lower
V, μ ±13
s produ at. nz trigger point.
the V.
p-
ces C. ala er
rate A
p
12. I an rm o-
of diff 15.R
na outpu clo le
cha ere efe
flas t that ck. ve
nge ntial r to
h appro D. no l
of volt the
A/ ximat ne de
the age giv
D es of te
out of en
con the the ct
put 0.1 fig
ver area ab or
volt Vp-p ure ov
ter, under
age is . e 23. A
the the
in app Det differe
pri curve
res 17. To u he ntiator
orit of an
pon reduce p low is used
y input to
se the p er
enc functi measu
to a effects of e trig
od on? re
sing noise r ger
er A. int A. th
le resulting t poi
is egr e
puls in erratic ri nt.
use ato su
e switching g C. no
d r m
inpu of output g nz
to B. diff of
t is: states of e ero
A. s ere r th
a -
e ntia p e
lev
l tor comparat inp
o el
e C. su or, you i ut
det
c mm can use n vol
ecti
t ing A. th t. ta
on.
t am e ge
B. t D. hy
 INDIABIX 1
B. ju a the q B. 2. The summing its circu
SEMI amplifier
n t ab u diode fe it or
ct o ove COND a 1. A. is
with a
ed uses
closed-loop
io r.
30.W
UCTO l 6 the simplestgain equal ba a
n B. d × of ck capa
C. z if hich R 10
to the
t semi reciprocal cir citor
e f of the DIOD o
–19
cond of the cu in its
follow
n e
ing
ES C. uctor number of it. feed
e r devic
are J.
r e 1. 6. es inputs. B. us back
n variat A 25
D. v O B. ha A. av es circu
ti ions . ×
ar n s era an it
a a of the 6.0 10
e ch gin in
ct t basic 2 18
28. In a
ara g du
or o sum e D. cte comparator
B. sca ct
r. ming × risti with output
29. A V ling or
C. S ampli 1.6 cs bounding,
com tha C. no in
c fier? 1 6 what type of
par i t ne its
h A. ave 0 × diode is
ator s clo of fe
m rag 2 10 used in the
with –24 sel the ed
it ing 3 feedback
hyst e y ab ba
t am loop?
e B. – ov
ere t plifi ck
e A. Schottky
sis r er r 0.5 V cir
is i B. sca A. d C. 2V 26. cu
som g ling i D. –2 mathematic it.
etim g am 1.05 V o V al process C. u
es e plifi B. – d for se
e 22. What
kno r er 0.35 V determinin s
. s type(s) of
wn C. bot C. circuit(s) g the rate a
as D. n h C. b of change ca
o o use
a(n) of 0.35 V of a p
n t comparato
A. in the D. – function. ac
e h rs?
te ab 1.05 V A. Int it
o ov o
gr egr or
f e 20. Wh f
t ati in
at is (are)
h on it
the
e B. Dif s
necessar fer
A. 7 a fe
y ent
V A( b e
compone iati
B. – n) o d
nt(s) for on
7 v b
the C. Su
V e ac
design of m
C. k
a 21.Refer mi ci
A. bounded to the ng
+Vsat rc
comparat given D. Co
D. – ui
+V(o or? figure. mp
Vsat t.
A. r What is ara
ut)ma D. us
19. Refer e the tori
x
amplifier is ct es
to the B. output ng
a ifi a
given V(out voltage? 27.An
e re
figure. integrat
)max
r si
Determin C.– or circuit
di st
e the 2.47 A. us
o or
output V es
d in
voltage, D. a
e its
VOUT. res
s fe
+2.4 ist ed
B. z A.
7V or
e ba
25. n in ck
0.5 V
 INDIABIX 1
match ag oo of co cir 15. Which ctor diode D. 280 A
those of a e d an nd cui of the can be
simple cur dio ide uct t 24. Whi
following determine
switch ren de al ion B. A ch of
devices d quickly
C. is t of B. An dio ? sh the
can check using a
a 0.1 op de ort followin
A. A the .
t mA en in n circ g
condition A. D
w at dio the uit elemen
of a D
o- a de regi o C. Un M ts is
semicondu
te te C. A on p pre B. V most
ctor diode?
r mp sho of e dict O frequen
A. Dig
m rte n abl M tly used
era non ital
in d e C. cu for
tur dis
al dio D. U D. m e rv doping
e pla
d de n A D. All e pure
of y
e D. A d of tra Ge or
10 10. The me
vi def e the ce Si?
0° ter
c ecti fi ab r A. Boro
C. (D
e ve n diff ov n
A. T DM D. An
D. A oh e use e
r ) y B. Galli
ll m d d
u B. Mu of um
o me th C. Indiu
e 7. How ltim
f ter imp
B. F many ete e m
t uriti
a 5. Wh r ab D. All
h orbiting es
l ich C. Cu ov of
e electrons with
s capa rve e the
a does the valence
e citanc tra abov
b germaniu electron 18. How
e cer e
o 4. W m atom s are many
v domi D. All
hat have? called valence 25. C
e nates of
doe A. 4 donor electrons alculate
in the the
s a B. 14 atoms. does a the
3. It ab
rever C. 32 A. 4 silicon temper
is hig ov
se- D. 41 B.3 atom ature
not h e
bias C. 5 have? coeffici
unc resi 8. How
regio D. 0 16. Which A. 1 ent in
om sta many
n? of the B.2 %/° C
mo nce terminals 11. In
A. de following is C. 3 of a 10-
n rea does a which of
ple an atom D. 4 V
for din tio diode the composed nomina
a g in n have? following 19. What
of? l Zener
ger bot B. con A. 1 color(s) is the
A. Ele diode
ma h ver B. 2 is (are) resistor
ctr at 25°
niu for sio C. 3 LEDs on value of
war C if the
m n D. 4 presentl s an ideal
d- nomina
diod C. 40 y B. Pro diode in
an 9. What l
e Ω available ton the region
d unit is voltage
with Diff ? s of
rev used to is 10.2
an usi A. Y C. Ne conductio
ers represent V at
Is in on e utr n?
e- the level 100° C.
the D. 140 ll on A. 0
bia Ω of a A. 0.0238
ord o s Ω
s No diode B. 0.0251
er w D. All B. 5k
of dir ne forward C. 0.0267
B. W of Ω
1–2 ecti of current the D. 0.0321
h C. Un
µA ons the IF? it ab de 26. In
at indi ab A. p e ov fin general
25° cat ove A C. O e ed , LEDs
C to e? B. n r D. Infi
6. Wh 17. The operate
hav A. A A a nit
at is condition at
e C. µ n y
the of a voltage
leak g A g
state semicondu levels
 INDIABIX 1
fro volt s at B. D. V 21. Calcula employed ce silicon
m ag 25° C e te static wi diode
resista most
e and 1.7–3.3 V r nce RD se when
V to for the C. y of a - VD = 0?
frequently
the temp h diode lin (Choos
V. Ze eratur 5–12 V i having ID = in ea e the
A. ner e D. g 30 mA and r best
dio coeffi h VD = 0.75 the answer
30. W
1.0, de cient 20–25 V V. analysis of .)
f hat
3.0 at is A. 25 electronic A. 1 pF
14. At r is
a 0.05 B. 40 systems. B. 3 pF
B. what kind e the
............ te %/° C. 0.04 A. ide C. 5 pF
of q valu
1.7, 3.3 mp C. D. 0.025 al D. 10 pF
operating u e of
era A. 4.6 de
C. frequency e 22. In the
V vic 31. Wh
............ tur diffusion n trans
which of e ich of
0.5, 4.0 e B. or c ition
the B. si the
D. of transition y capa
following is mp followin
12 4.86 V is a citan
the light lifi g
None of 0° C. 5.1 capacitor ce
intensity ed ratings
the above C if V for a
represent measured C. pie is true?
the D.
27. D ed in ? A. Si er ve
eter no parallel
5.34 V A. Ca dio PI lowe
min min with the nd
al de V r
e 28. What is ideal ela s a PIV
the volt the diode? B. Effi
ag ha n and
no maximu A. L cac ve d narr
min e is m o y
5.1 hig w owe
al power w C. Flu
Volt
he id r
rating fr x r er
e D. Illu
12. Deter 20. for PI temp
q mi
mining rd Calculate LE V te erat
u nat
to a high the Ds? e an m ure
ion
degree of power 150 n d p rang
accuracy dissipatio mW c 23.Calculat na er es
from a n of a 500 y e ID if RD rro at than
character diode mW diode B. M = 30 we ur Ge
1W mode and VD e
istic having ID o r diod
curve is = 40 mA. 10 W l is d = 0.84 ra es.
very A. 2 e V. te n D. Si
29. A. 28
accurate. 8 r mp g diod
The mA
A. T m _ at era e es
ru W e B. tur s hav
e B. 2 fr e th e
B. F 8 e 0.028 mA ra a lowe
al W q C. 2.8 ng n r
s C. 2 u A G
es PIV
e 8 e th e and
13. What 0 n an di wide
is the m c Ge o r
range W y
of the dio d
operat D. U C. M e
ing de temp
n id s.
s. erat
d fr
B. Si C. Si ure
e e
di di rang
fi q
od o es
n u
e es d than
e
d n ha e Ge
c ve s diod
voltage LEDs? 5– hi h
y es.
level for A. 12 mV a
gh
 INDIABIX 1
32. The silicon mine the A. cl a terminal of ut regul
ideal diode if total ip r the volt ator
diode is the discharge p d transforme age C. line
a(n) voltage time for er , r? B. pea regul
circuit in drop the o 9 k ation
the across it capacitor r 0 inv D. ripple
region of is about in a li º ers A. 25 volta
noncondu 0.7 V? clamper m B. r e V ge
ction. A. N having C = it volt B. 15
age V 11. A
A. o o 0.01Μ F short
p b C. pea C. –
and R = circuit
e i k 25
500 kΩ. has a
n a im V
A. 5 across
B. s s me D. –
ms its
h B. F diat 15
B. 25 termina
or o e V
ms ls, and
t r er e volt
C. 2.5 10. I the
w B. cl v age
33. Which ms n a
a a e D. pos current
capacitan D. 50 itiv regul
r m r is
ms e ated
ce d p s limited
dominate inp suppl only by
b 2. Which er e A. –10
s in the ut y, the
i element C. I , V
forward- volt what surroun
a dictates the C 1 B. –20
bias 8 age term ding
s maximum v V
region? ol 0 desc networ
C. R level of C. 10 8. Determi
A. Di e ta º ribes k.
source V ne the
ff v g C. f how A. 5V
voltage? D. 20 peak value
u e e o muc
V of the B. 0V
si r re r h
current C. 1V
o s g w 6. The chan
through the D. ∞
n e ul a output ge
at r load occu
B. Tr b frequency 12. Det
i or d resistor. rs in
a of a full- ermine
n a D. n , wave the
A. VZ A. the
sit s o 1 rectifier is outp
B. IZM peak
io D. Z n 8 the ut
C. IZ 0 2.325 mA for both
n e e input volta
D. No of º B. 5 half
C. D n frequency. ge
ne th D. r mA cycles
e e A. on for a
pl r of e e C. 1.2 of the
e- given
et r the a v
ab hal
io e b e f
n g ove o r
B. equ
i v s
al
D. N o e e
to
o n 3. What ,
4. Each C. twi 5 output
n type of 9 chan
diode in a ce mA wavefo
e diode 0 ge in
center- D. on D. 0 rm.
of DIO circuit is º the
tapped e- mA
th used to input
DE clip off full- wave 5. What qu
9. Determi volta A. 16 V,
e is the art
a AP portions of rectifier is
voltage er ne the ge? –4 V
B. 16 V,
b PLI signal
and measure peak value A. loa
4V
o voltages 7.PIV is of the d
v
CA above or conducts d from which of output re C. –16
for of the the
e TIO below negative
the waveform. gul V, 4 V
certain input following ati D. –16
cycle. terminal ? V, –4 V
on
34. In levels? A. fo of C4 to A. pe
NS r the ak
B. vol 13. Wh
what tag at is
state is a 1.Deter w negative inp e the
 INDIABIX 1
pea 14. W 0V A.
5 e
k hat E. non
0
6
inve is e 6.061 mA
1 r B. 0.7
rse the of
the 1 e mA
volt VRR
ab g C.
age M 2
acro (PI ove Full- u
wa l
ss V 3.393 mA
15.W ve a
eac rati D.
hat re t
h ng) type cti o 3.571 mA
diod for of fie r
e in the diode r 17. What is
s
a 1N circuit Half- the logic
volt 400 is wa function of
h
age 1 used ve this circuit?
a
dou rect to rec
v
bler ifier add tifi
er e
? dio or ?
A. V de? restor A.
m A. 5 e a
B. 2 0 dc
V V level
m B. 1 to an
C. 0. 0
electri
5 0
cal
V V
signal A. Po
m C. 2
? siti
D. 0. 0
0 A. clip ve
2
V per log
5
or ic
V D. 4
limi AN
m 0
ter D
B. cla 2 25. gat
m 0. If e
pe W the B. Po
r h ac siti
C. IC at sup ve
vo b ply logi
lta es is 50 c
ge t Hz, OR
re d wha gat
gu es e
t
lat cr C. Ne
will
or ib gati
be
D. non es ve
th the
e logi
e rippl
of c
th cir e
freq AN
e c D
ab ui uen
gat
ov t? cy
e
e out
of
the
full-
wav
e
recti
fier?
16. t D
De e
 INDIABIX 1
22.Deter V B. 3 w. silicon
mine C. 4 C. 4 Whic diode
ID2. . D. 5 h in a
3 E. no diode half-
V ne arran wave
D. of geme rectifier
the nt will has a
1.371 V ab suppl barrier
A. 2 C. Cli ov
. pp y a potenti
A. e negat al of
5 er
ive A. a 0.7 V.
m D. C 27.A
29.40 mA outpu B. b This
A la n
B. t C. c has the
B. 0 m open
m volta D. d effect
p 30.30 mA circui
A er t can ge? 30.A of
C.
C. 1 have A. re 0.
. 21. What
14.70 mA any du 7
3 is the PIV
D. volta ci V.
7 for each
ge ng D. no
m diode in
None of acros th eff
A a full-
the above s its e ect A. RL =
D. wave 5 kΩ
termi pe .
center- 23. Deter B. RL =
nals, ak
1.479 mA tapped mine the 31. Wha 5.5
but ou
rectifier? current t best kΩ
the tp
Note: level if E describ C. RL =
curre ut
Vp(out) = = 15 V es the 6 kΩ
nt is vo
peak and R = circuit? D. None
alway lta
output 3 kΩ. of the
s . ge
voltage. abov
A. V by e
A. 5A 0.7
p(o
B. 0A 33.Use the
ut) V. informatio
C. 1A n provided
– B. inc here to
A. 0 D. ∞ A. Ful
0. re
A l-
7 28. Determi asi
V wa
B. 4. ne ID1. ng ve
B. V 7 the rec
p(o 6 pe tifi
ut) m ak er
+ A out
0. B. Ha
C. 5 put
7 lf-
m vol
V wa
A tag ve
C. 2 D. 5 A. 0 e rec
V A mA by tifi
p(o
24. Deter B. 0.7 er
ut)
mine V. C. Cli
– 29.40 mA
0. V2. C. re pp
C. du er
7
V cin D. Cl
14.70 mA am
D. 2 g
D. per
V the
pe 32. Deter
p( 14.09 mA
ou
ak mine the
t) 29. R inp value of
+ efer ut the load
0. A. to the vol resistor.
7 figure tag
V 3.201 V given e
B. 0 belo by
 INDIABIX 1
si rea A. 9. C. e s is e h C. In a
n sin 3 q such exists. iS voltage
mA
g g V u that G -
38. In D.
, B. 1 a its B multipli
d 37.Refer a
0 l directi o er
to the partic mA
A. 2 e V t on circuit,
m c figure o ular
C. – match 44. Wh the
A r given 1 D. n probl at
es number
, e below. The 0 o em, be
that of
0 a probable V n which st
of the diodes
m si trouble, if D. 0 e mode de
arrow is
A n any, V o has scr
in the directly
B. 4 g indicated f the ibe
41. T diode proporti
m B. d by these t highe s
he symb onal to
A e voltages is h st the
, c out ol, the
e level cir
2 r put a and cui multipli
of
m e freq b VD ≥ t? cative
IDQ?
A a uen o 0.7 V voltage
Ideal
C. 2 si cy v for Si factor.
Approxi
m n of a e and A. True
mate
A g A. one half VD ≥ equiv
, 42. A 0.3 V
, of - alent
in dio A. Full-
2 the wav for Exact
c de wave
m dio e Ge. mode
r is rectifie
A des rect A. off using
e in r
D. 2 is ifier B. on chara
a the B. Half-
m ope is C. ne
" cterist wave
A si n. utr
n ic rectifi
, B. a al
the curve er
4 g dio " D. qui
inp None of C. Clipper
m C. in de stat esc
c ut the D. Clamper
A is e if ent
r freq above
sho the 45.
36. In e uen 43.Determi
rted cur 39. W
the a cy. ne ID.
. ren 34.If the ac D B.
operation si C. an A. o
t supply .
of a half- n ope n False
n est is 60
wave g e
tran abli Hz, N
rectifier , sfor -
mer h she what ei
with a d
sec al d will be t
capacitor e ond
ary. f by A. 0 h
-input c
B. t the mA e
filter, the r
w app B. r
ripple e
ic lied S
factor a
e sou 1.893 mA i
can be si
rce n
lowered n
o
by the g deter D. the r
D. i DQ.
value of mine 0 filt G
the filter n the 4 er e
capacitor c value 5 ca the ripple 120
r of I 1 40.
or pa frequency Hz I
e Determine
cit out of the
a 35.C L
V
or half-wave
s a
the load is rectifier? a
i l
resistors. sh A. 30 n
n c
A. d ort Hz d
g u
e ed. B. 50
, l
cr E. no Hz I
i a
e tro C. 60
n t Z
a ubl Hz .
c e
 INDIABIX 1
oif E1 = E2 = 46. r e nt will c 52.Refer d. voltage
10 V. R g r supply a O to the E. no regulator
e e i positive R figure tro network with
c r e output given ubl fixed RL and
s s voltage? g below. If e R, what
t
. B. P a the exi element
i
a t sts
f T voltmeter dictates the
r r e across the . minimum
i
a C. N
e u ll e
transformer 53. Deter level of
r e A. 4.6 reads 0 V, source
e g mine the
s F 5 the voltage?
l a voltage
a m probable A. VZ
C. S ti across the
l A trouble, if B. IZ
a s e v resistor.
r e B. 9.3 any, would C. IZM
e r
e i l mA be D. None
A. a of
47.L e o C. 18.
B. b 6 the
c i s C. c g
mA abov
o s D. d
i
A. 0
D. 0.7 e
m t a c
V
mA
m t n
B.
h d A
o
e 50. What N A. on TRAN
n is the 0.09 V
l p D e
C. 0.2
S
c a logic of
y a
r function g the V I
D.
t a of this a dio S
u e l circuit? des
t T
s g l is 0.44 V
e
e o e D. N op 54. With O
d r l en.
i D. N
e
B. a
this Zener R
g diode in
i e o a dio
its "on
n s n de
ti
is
state," B
e v what is
b o e sho
the level
I
f o rte
a
c
l
d. of IZ for A
t f o
l C. an the S
t t A. P g
i maximum
e h o i
p e op load
r si c
p ti O en resistance C
y e ?
r
a v R I
b e tra
c s o lo g nsf R
h .
a S
v gi a or C
e c t me
48. A 117.7 V. or A e r U
silicon The diode wa N
51. Deter
se I
diode is rd- D co A. 0
has a A. o bia g mine the m T
nd
p se at current A S
voltage ar
to ground e d. through B. Un
y.
of –117 V n D. rev de 1.Clipping is
e each D. the
. ers fin the result
from the B. P diode if filte
B. s e- ed of
anode. o E1 = E2 r
h bia C. Eq A. the
The si = 0 V. cap
o sed ual input
voltage ti acit
rt . to signa
to ground v or
e IRL l
from the 49. Which e is
d D. IZM being
cathode diode lo sho
. too
is – arrangeme gi rte 55. In a
C. f large
 INDIABIX 1
. the base the Th the A. sat du circuit
B. t tra ? bas e base- ura cti arrange
h nsi A. bas e- mo emitt ted ng ment
e sto e emi st er . . has
tr r bia tter pro juncti B. cut poor
16. Wh
a bei s jun ba on is off. stability
ich tra
n ng B. col ctio ble open. C. no because
nsist
s driv lec n is ca B. RE nc
tor on or bias
i en ope us is
- C. V
s into n. e op base C it DC?
t cut fee B. R of en. bias D s
o off. db E tro a short from collector Q
r ac is ubl collec - -
D. a
k o tor to feedb p
b ll e,
bia p emitt ack oi
e o if
s e bias nt
i f an er.
t C. volt n. v
n y, D. no
h ag a ar
g fro pr
e e- short m ie
d obl
a divi s
ri fro the em
b der wi
v m se s.
o bia d
e collector
volt
v s 5. Wh el
n to ag
e D. emi at is y
i tter emi e the wi
n 2. Which bia tter. me th
dc
t tra s D. n as β
input
o nsi o ure resist A
s 3. Re p me
sto ance .
fer to r nts
a r at the
the o
t bia is base b
given bl
u s of a a
figure e
r circ BJT? s
. The m
a uit s. A. βDC e
ti most bi
arr RC
o proba 4. R a
an B. βDC
n ble efer s
ge ·
. caus to C. vol , for linear
me (RC
e of the tag operation, a
nt ||
troubl give e- transistor
pro RE
e, if n ) div should be
vid
any, figu ide biased so
es
from re. r that the Q-
go
these C. β polarity 11. What is bia point is
od s
volta supply the Q-point A. near
sta DC
D. emi
ge ·r voltage? for a fixed- satur
bilit tter
meas e′ bias A. sa ation.
y bia
urem D. β transistor tur B. near
usi s
ents DC with IB = at cutoff
ng ed
is R 75µ A, βDC = 7. Refer to .
ne .
E 100, VCC = this figure. C. wher
gati B. cut
20 V, and In the e IC
ve 6. Which off
RC = 1.5 voltage- is
fee transistor . maxi
db bias kΩ? divider
C. no mum
ack circuit A. VC biased npn
nc .
fro provides = 0 transistor on D. half
m good Q- V circuit, if R2 du way
coll point B. VC opens, the cti
= bet
ect stability transistor ng
20 wee
or with a is .
V n
to single- cuto
8. Ideally
 INDIABIX 1
ff of IB is 12.Emitter B. coll ge is
a bias 5.3. ect meas op
n requires B. or- urem en
d A. onl fee ents .
s ya 53. db woul a short from
a pos C. ack d be colle
t itiv bia ctor to
u e 94. s emitt
r sup D. C. volt er.
a ply ag D. no
ti volt 100.12. e- pr A. 5A
o ag divi obl B. 5 mA
A. 5 14. Refer
e. der e
n 3 to this C. 0 mA
B. onl bia ms
. µ figure. D. 10
ya s .
A Assume mA
9. The . ne D. em
most gati that IC≈IE. itte 19.Refer 20. At
B. 5 Find VE. to this
stable ve r saturati
0 figure.
biasing sup bia on the
µ the Determi
techniqu ply s value
A base- ne IC.
e used is volt of VCE
. 17. W emitt
the ag is
C. 5 hat is er
A. v e. nearly ,
0 the
ol C. no juncti and IC
m most
ta sup on is = .
A com
g ply open. A. zero,
. mon
e- volt B. RE zero
D. 5 bias
di ag V
3 A. 5 circui B. age-divider bias has
vi e.
m V t? C a relatively stable Q-
d D. bo
A B. 1 A. ba C point, as does
e th
. 0 se , A. base bias.
r po
V B. coll B. collector-
bi siti
C. 1 ect I feedback
a ve
5 or C bias.
s. an
V C. em ( C. both of the
B. b d above
a ne D. 2. itte s
5 r a D. none of the
s ga
V D. vol above
e tiv t
tag 22. Refer
figure. to this
bi ≈I . Assume I
)
e 15. Refer
a e- C. z
su to this
s. div e
pp figure. In
C. e ide r
ly the
m r o
vol voltage-
itt ,
ta divider 18. R
er ge efer
biased I
bi to the
s. npn
a (
transistor given
s. 13.Refer to s
circuit, if figure
D. c this figure. a
RC . The
ol The value t
opens, most
le of βDC is )

ct the proba D. V
or transistor ble C

bi is caus C

a e of ,
s. troubl
e, if z
10.Refer any, e
to this from r
figure. these o
The A. volta 21. Volt
value
 INDIABIX 1
B. D. .
CE. 27. Refer
C.
base of n 25.Refer to to this
29. Cha A. 1 a th this figure.
change k voltage- e figure. Calculate
A. Ω divider cu The the
B. DCB.BIASING1. biased rre value of current I2.
C. BJTs 5 transisto nt IC is
C E
k r can be thr
10 Ω neglecte ou
µA. C. 2 d gh
Determin B. 1 fe k A. a R2
e the 1. Ω t A.
0 e (th
value of Calculat D. 2. a
RC that m d e
eV 5 ll saturated.
will allow A b lo
VCE to . a k ti we
equal 10 C. 5 c Ω m r
V. m k e bi
23. The s
A bi linear as
. a . re
s (active) B. o
D. 5 sis
operating n
0 volt tor
region of l
m a ).
g a y
A C. at
. e transistor
lies along no
- i tim
26. di the load f e.
Which vi line t D. onl
transistor d below h y if
bias e and e the
circuit r above
arrangem bi ba A. 32
A. c b
a se m
ent ut a
s cur A
provides of
s re B. 3.2
good Q- em f,
e
it s nt m
point
t at is A
stability, c
e u mu C. 16
but u 8
requires r r ch
b at r lar µA
both r D. 32
ia io ge
positive e 0
s n r
and n µA
B. s tha
negative t
a n 28. Refer
supply i
t the to this
voltages? u s cur figure. In
A. b r
a re the
a m nt
s voltage-
ti u thr
e divider
o c ou
b biased
n h gh
i npn
a ,
R2 transistor
s c s (th circuit, if
u m
B. c e R1 opens,
t a
o lo the
o l
ll we transistor
ff
e l r is
c e bia
t 24. The r
input s
o t res
r resistanc h
e of the ist
- a or)
 INDIABIX 1
A. – tion ver e junction istor,
4.52 V mu se inp forward the
B. st D. rev ut biased and voltage
be ers an the base- VBE
4.52 V bia e, d collector should
C. – sed for out junction be in
9 . war put reverse the
V A. f d sig biased? neighb
D. 9 o nal A. Sat orhood
3. The
V r A. A. 20 s ura A. Tr of 0.7
cutoff
w region is B. 50 ar tion ue V.
2. F 18 V
a defined C. 75 e B. Lin B. Fa A. True
or B.
r by IB D. 116 in ear lse B. False
the
d 0 ph or
BJT , 9.22 V 10. Determine 14. I 16.In a
A. as act
to f C. 25ºC to n the voltage-
A. > e. ive
ope o 175ºC for case divider
B. < B. Th C. Cut
rate r 3.23 V the of circuit,
C. ≤ e off
in w D. transistor this which
the D. ≥ vol
a defined circui one of
acti r tag
4. De None of in this t, the
ve d the above e
termi table for you stability
(line B. f gai
ne fixed- must factors
ar) 7.Calcula n
o the bias with assu has the
te the is
regi r readi RB = 240 me least
value of sli
on, w ng on kΩ and that effect
VCEQ. ght
the a β= 100 VE = on the
the ly
bas r due to device
meter 0.1·
e- d les
when the VCC at very
emit , s
VCC = S(VBE) in high
ter r tha
20 V, stability order temper
junc e n
RC = factor. to ature?
tion v 1.
e 5 kΩ, calcu A. S(ICO)
mus C. Ou
r and IC late B. S(VBE
t be tpu
s = 2 RC )
- t is
e mA. and C. S(β)
bias dr
C. r A. RE. D. Unde
ed aw
e fined
and A. n
v 8.78 V
the fro 17. Whi
e B. 0 145.8 µA
bas m ch of
r V B.
e- the the
s C.
coll em followin
e 145.8 nA
ecto itte g is
, 7.86 V C. –
r r r (are) a
D. 145.8 µ A
junc e ter stability
D. – mi factor?
A. 1 circuit, B. S(V 18 V 145.8 nA A. Tr
0 nal ue A. S(ICO)
which BE)
8. Calcul 11. W . B. S(VBE
V one of C. S(β B. Fa
ate the hich of D. All )
B. – the ) lse
1 approxim the of C. S(β)
stability D. Un
0 ate value following the 15.F D. All
factors defi
V of the is (are) ab or an of
override ne
C. 0. d maximu related ov "on" the
s the e
7 6. Calculate m power to an trans abov
other e
V the voltage rating for emitter-
factors? 12. At what
D. 2 across the the follower characteristi W 50 W
A. S transistor region of
0 (I 91 kΩ represent configur operation cs of Figure B. 17 m
4.1? W 9. For
V resistor. ed by the ation? is the 0
C
output A. 250 m 0 what
5. In a O A. T base- value of
) h emitter m W m
fixed-bias β does
 INDIABIX 1
the D. None m D. I about is
transistor of the 18.C Csat. A designate
above al B
A. 49.2
enter the D. 2. , % to d as ton Ω
c
saturatio 13. You 5 I % of and B. 49.2
ul
n region? can at 8 C CC. A. 10 defined as kΩ
select m , , 60 the delay
e A. 1.4 C. 49.2
the A a B. 25, time plus
I V, 59.7 µA mΩ
values n 75 the time
21.Calcul B. – D. 49.2
for the d C. 40, element.
ate ETh 1.4 V, 59.7 MΩ
emitter I 90
for this µA
and E 30. The
networ C. – 27. For
collector ratio of
k. 9.3 V, 3.58 the BJT to
resistors which
µA operate in
from the two
D. 9.3 the
informati current
V, 3.58 µA saturation
on that s is
25. Use region, the represe
is
this table base- nted by
provided
to emitter β?
for this
circuit. determine junction A. IC
23. the change must be and
True
hich in IC from biased and IE
Fals
following
e 25ºC to the base- B. IC
if = 0.3 175ºC for collector and
must sa have
2 t V V. RB / RE = junction IB
negative
9. C 250 due to must be C. IE
(value) A.
C E the S(ICO) - and
biasal
stability biased. IB
A. c −12.12 V
factor. A. for D. None
B. ul B.
Assume wa of
C. at the
an emitter- rd,
D. e 16.35 V abov
bias for
R C. wa e
configurati
24. on. rd
−3.65 V 31.Whi
etermine B. for
D. ch of
values war
d, the
I 10 V followin
rev
ers g is
22. Whic
e assum
h of the
A. time in a s C. rev ed in
following
transisto D. 34 ers the
currents A.
35.29 mA r ns e, approxi
is nearly
B. 5. switchin rev mate
20. Determ equal to 140.34 nA
4 g ers analysi
5 ine ICQ at a each B.
network e s of a
m temperatur other?
if toff is D. rev voltage
A e of 175º C A. IB 140.34 µA
56 ns, tf ers divider
C. 1. if ICQ = 2 a C.
= 14 ns, e, circuit?
8 mA at 25º n
and tr = for A. IB is
6 C for RB / d 42.53 nA
20 ns. war esse
m RE = 20 IC D.
A. 7 d ntiall
A due to the B. IE
0 y
D. 4. S(β) a 0.14034 nA 28. The
n zero
7 stability n total time
s 26. For the amp
2 factor. d required
B. 4 typical eres.
m A. IC for the
2 transistor R1 and
A 2.417 mA C. IB transistor
n a amplifier in R2 are
B. to switch conside
19. Calc s n the active
2.392 mA from the red to
ulate the C. 3 d region, VCE
C. 2.2 "off" to the be
storage 6 IE is usually
n 5 "on" state series
 INDIABIX 1
ele defi which ID M VS. B. 8V e ea
me ne 4.48 V becomes O C. 6V C. ne and
nts. d D. – essentiall S D. 2V ga the
C. R by 4.48 V y F tiv con
E 5. A self- e
E VCE constant stan
≥ 34. W T biased n- D. an
is the t
1 B. E channel y
VCE hich A. p curr
0 - JFET has of
of the i ent
R sat. M a VD th
follow n area
A. > O = 6 V. VGS e
2 ing is c .
D. A B. < S = –3 V. ab
(are) h C. betw
ll C. ≤ F Find the ov
the - een
o D. ≥ E value of e
applic o the
f T A. 20 VDS.
33. Ca ation( ff cons
C. V A. –3 8. Midpoint
t s) of v V
lculat V bias for tant
h o -
e VCE. a B. –6 a D- curr
e lt M
transi O V MOSFE ent
a a
stor? S C. 3V T is ID = area
b g
o A. Am F D. 6V , and
e.
v plifi E obtained the
B. c 6. Refer to
e cati T by setting brea
ut the given
on VGS = 0. kdo
of 3. Refer figure. ID =
of A. IDS wn
32. T f
sig to figure 6 mA. S / regio
he v
nal given Calculate 2 n.
sat A. ol
B. Swi below. the value B. IDS D. abov
urat ta
tchi Calculat of VDS. S / e the
ion 4.52 V g
ng e the 3. brea
regi e.
B. – and value of 4 kdow
on 4.52 V C. b
con VDS. C. IDS n
is r
C. trol S regio
e
C. C a bias F n.
a 9. On the
o circuit
m that is F k drain 10. Refer to
d characteri
p indepen E o stic curve
the given
ut dent of figure. ID = 6
er the
C w of a JFET mA.
n A. –9
lo transisto T v V
for VGS = Calculate the
gi r beta. 0, the value of VDS.
ol B. 9V
c A. T pinch-off
ta C. 6V
ci r T g D. –3
voltage is
rc A. bel
ui
u R e. V
ow
e D. o A. 0
tr
B. F A h V the
y oh
D. A
a N m B. 2
mi
l ic V 7. What
ll s S v C. 4 type(s) of c
o e I V gate-to- ar
ol
ta D. – source ea.
f S g 2 voltage(s) B. b
t et
h F T e. V can a
depletion w
e I O 2. The 4. Refe
MOSFET ee
a has a r to
b E R (D- n
physical figure th
MOSFET)
channel e
o S operate
v L between shown
with? o
e 1.For a the drain below. h
D and Determi
A. zer
JFET, the o m
35. It is source. ne the
value of B. pos ic
desirable A. D
to design E VDS at value of itiv ar
-
 INDIABIX 1
ces proxi A. a 23. High change in
has matel B. b co input drain current
the y C. c nst resistance for a given
hig zero D. d ant for a JFET change in
hes is the - is due to gate-to-
16. All a en
t A. pin cur A. a source
MOSFET n t
inp ch- ren m voltage, with
s are c M
ut off t, et the drain-to-
subject to e O
resi volt av al source
damage m SF
A. – sta age ala oxi voltage
from e ET
6 nce . de constant, is
electrost n . nc
V ? B. cut lay A. brea
atic t he
B. 6 A. d off 19.Refer to er. kdow
discharg M C. oh
V i vol figure show B. a n.
O mi
C. 1 tag e (ESD). lar
o S below. c, B. rever
2 d e. A. tr ge se
F Calculate
V e C. bre u in trans
E the value co
D. – akd e pu cond
B. J T of VD. nst
3 ow B. fa t uctan
F . ant
V n ls re ce.
E C. a -
volt e C. forw
11. Refer T V si
age vol
to figure C. M 17. Ide M st ard
. tag
give O ntify O or trans
D. oh e,
n below. S the n- S to cond
mic br ucta
Det F chann F th
E volt ea nce.
erm el D- E e
T age T kd D. self-
ine MOSF de
D. b . ET. . ow biasi
the A. 20 vi
i D. e V n ng.
valu 14.Th ce
p e i B. 8V 21. In a .
e of 25.Identify
o JFET t C. 6V self-biased C. an
VGS. the p-
l is h D. 2V JFET int channel
a alway e circuit, if rin
20. What E-
r r sic
s A. a three VD = VDD MOSFET.
j lay
operat B. b then ID =
u a areas are
ed C. c A.0 er.
n the drain
with D. d B. can D. th
c d characterist not
the e
ti 18.A e ics of a be
gate- ga
o dual- JFET (VGS det
sourc p te-
n gated = 0) divided er A. a
A. – e pn l so
tr MOSF into? min B. b
2 juncti e ed ur
a ET is A. oh C. c
0 n on _ t fro ce
V A. a i mi m D. d
s biase ju
B. – d o c,
i d. nc 26. Refer to
8 e
s A. for n tio figure shown
V pl co
t war et n below. What
C. – o nst
o d io be is the value
6 r ant
r B. rev n in of IG?
V -
ers M g
D. – 13. The a cur
e O re
2 val n ren
S ve
V ue 15.Identify t,
F rs
of the p- e br
12. W E e-
VGS channel n ea
hich D- T bi
tha h kd
of MOSFE . as
t a ow
the T. B. a e
ma n n
follo n d.
kes e c B. pin
win A. 6 mA
ID n e ch- 24. For a
g B. 4 mA
ap h m off, JFET, the
devi C. 2 mA
 INDIABIX 1
D. 0 29. Identif n 1. A. 0V 2. Calculate of VDS.
m y the gat Calculate B. the value
A n- e the value VGSQ equal to
chann lea of VDS. 0.35 V 1 V?
27.A d.
el E- C. 3.8
JFET MOS C. FE V
data FET. T
sheet inte
specifies rna
VGS(off) = – lly info D.
6 V and op rma 2GS A. 0V
IDSS = 8 en 8(off 33.5 V B. 8V A.
tion
mA. Find at .) = C.
abo –
the value A. a gat ve 2.400 kΩ
B. b A B.
of ID e. 4.75 V
when VGS C. c D. all D. 16
J
= –3 V. D. d of V 5.167 kΩ
F
A. 2 the E C.
30. I 3. Given
m ab T
f the values 6.167 kΩ
A ov
VD e of VDQ and D.
B. 4 d
is IDQ for this
m a
les 31.R circuit, 6.670 kΩ
A t
s efer a determine
C. 8 5. For the
tha to the the
m FET, the
n given s required
A
exp figure h values of relationship
D. n
ect . ID = e RD and RS. between
o
n ed 6 mA. e the input
e (no Calcu t and output
of rm late quantities
the s is
th al)
p
e for value
e
a a of due to the
c
b self VDS. i
o - term in
f
v Shockley's
bia i
e e equation.
sed
JF s A. 2 A. no
ET kΩ, nli
circ V ne
2
uit, 22. The 10 V and .92 kΩ ar,
resistance IDSS = 8 m B. 1 cu
the
of a JFET mA. Find A kΩ, be
n it
A. 13.2 biased in the value d
cou 5.3
V the ohmic B. line
ld of ID kΩ
B. 10 region is when VGS ar,
be C. 3.2
V controlled pro
cau = –3 V. kΩ, 400 Ω
C. 6.8 by por
sed A. 2 D. 2.5
V A. V tio
by m kΩ, 5.3 kΩ
D. 0V nal
a(n D. A
B. V 4. For C. no
) B. 1
. nli
A. o DC G
. 4 what value
ne
p S

e BI C. V m of RD is the ar,
voltage
n AS S. A
across VDS
sq
R D. V C. 4 uar
IN DS . zero? ed
G
. G . 8
6. For
m
B. o FE A what value
p
e
Ts D. 3 of R2 is
 INDIABIX 1
l ou e 11.O , D. 4.1 enha A. 250
i tp r n volt 3 ncem Ω
e ut di the age kΩ ent B. 500
s cu o uni - mod Ω
d bia 14. At
rre ver e? C. 10 M
e s what
i nt sal Ω
D. m, value
s I D. 10. For JFE D. None
volt of RS
D. All T of the
what age does
e of bia abov
value of - the
the s e
l RS can bia circui
i ab cur
the s t
m ove ve,
A. 1 depletion switc
i 8. The input -type the 12. C h
0
n controllin MOSFE vert alcula from
M
a g Ts ical te the deple
Ω
t variable operate sca value tion
B. 1
0 e for a(n) in le of RS. mode
0 d is enhance lab Assu to
M . a current ment ele me
Ω B. A level and a d VGSQ 15. Which
D. Both
mode?
C. 1 r voltage = of the a
1 e level for can −2V. following r
0 si a(n) . , in current e
M s A. BJT itse equations
Ω t , lf, is true? o
D. 2 o FET be A. IG = b
2 r B. FET use ID t
0 R , d to B. IG = a
M S BJT find IS i
is A. 2. C. ID =
Ω C. FET the n
a 4 IS
, sol e
7.Which d k
FET utio A. 0 D. IG = d
of the d Ω
D. BJT n kΩ ID =
following e B. 5 IS
, to B. 1.6 b
is (are) d k
BJT 8 y
true of a . Ω 16.Calculat
kΩ
self-bias C. V C. 6. e VDSQ.
9. Through configura C. 6.8 w
configur 2
G
proper tions. 1 r
ation k
S
design, a A. m kΩ i
compare Ω
can be , D. 8.5 t
d to a D. N
i introduced fi kΩ i
fixed- o
s that will x n
n 13. Calc
bias affect the e
e ulate the g
configur a biasing d
of value of
ation? level of a -
th RD. K
A. O f voltage- e b i
n u controlled a i r
e n JFET b a c
c resistor. o s
h
o t A. pho v B. M
h
f i todi e ,
o
t o ode fi
f
h n x
B. the f
e e
rmi '
d
o sto A. 2 s
-
d f r kΩ
b
c t C. lase B. 3 v
i
s h r kΩ o
a
u e diod C. 3.5 l
s
p e kΩ t
C. M
p D. Zen
 INDIABIX 1
a e n , dc e V D. A. 0V
g s A. 0V B. 2V
e i B. 20 C. 3V
n V D. 5.34
l p C. 30 V
a u V
D. 40 29. Sel
w t
V dom
are
( s 26. W current
K i hat is levels
V d the
A. measur
L e appro ed
) f ximat
23. What 23.0 V since
l e e
are the B. such
a o r curre
voltages maneuv
t o c nt
across RD 17.0 V ers
p h level
and RS? C. require
t a in the
21. Calculate VDS. disturbi
h r A. 0 gate 4.6 V ng the
a V of an D. networ
C. – e c B. 6 A. 0 FET
4 B. Fal V k
t V, in dc 12.4 V
V se C. 1 structur
e 0V analy 28. Calcula e to
D. 4 ri 6 B. 5
20. Which sis? te VCE. insert
V s V V,
of the A. 0A the
ti D. 1 5V
18. Whic following is B. 0.7 meter.
c 1 C. 10
h of the a false mA A. True
s V V, 10 V
following statement C. 0.3 B. False
represen . D. 20 mA
regarding 22. For
A. ts the V, 20 V D. Un
the dc load the
voltage line when 24. Deplet def
1.0 V noninver ine
level of comparing ion-type
B. ting d
VGS in a self-bias MOSFETs
amplifier
self-bias and do not 27.Calculat
1.50 V , one of
configur voltage- permit 30.In the across VDS?
C. the most
ation? divider operating design of
importan
A. V configurati points with linear
2.56 V t
D. G ons? advanta positive amplifiers,
B. V A. Bot values of
ges it is good
3.58 V G h associat VGS and design
S are levels of ID practice to
ed with
17. Cal (o line that
using a choose
culate ff) ar exceed
JFET for operating
the C. V line
control IDSS. points that
value s.
of VDS.
S
is the A. Tru do not
D. V B. Bo e
fact that crowd the
th B. Fal
P
it is saturation A. 3 kΩ
cro se
19. T ss level or B. 3.3 kΩ
he self- the rather 25.Calculat cutoff C. 4 kΩ
bias ori than e the regions. D. 5 kΩ
configur gin value of A. Tru
ation e 32. Which of the following
. VDSQ.
eliminate control. B. Fal describe(s) the
C. Bo
s the A. d se difference(s) between
th
need for c JFETs and depletion-type
int 31. What is
A. – two dc , MOSFETs?
ers the new
3 supplies. a A. VGS can be positive
ect value of RD
V A. T c or negative for the
the when there
B. 3 r B. a depletion-
tra is 7 V
V u c B. ID can exceed IDSS
 INDIABIX 1
f nt mode.
o D. All of the above
r
t 33. Determine the
h value of VDSQ.
e
d
e
p
l
e A.
ti
1.2 mA, –
o
1.8 V
n A. 3.5 V B.
- B. 4.86 V
t C. 7.14 V 1.5 mA, –
y D. 10 V 1.5 V
p C.
e 34. Specification sheets
. typically provide the
value of the constant k 2.0 mA, –
C. T 1.2 V
h for enhancement-type
MOSFETs. D.
e
d A. True
3.0 mA, –
e B. False
0.8 V
p 35.Determine the
l quiescent values of ID
e and VGS.
ti
o
n
-
t
y
p
e
c
a
n
o
p
e
r
a
t
e
i
n
t
h
e
e
n
h
a
n
c
e
m
e