Electronics Fundamental

TKE 071208

Lecture #1
Semiconductor Diodes
Materials
 Diodes
A diode is a two-terminal device that allows current flow only in one direction.

Anode cathode
 Diodes (Cont...)
Diode Operating Conditions

A diode has three operating conditions:

• No bias
• Forward bias
• Reverse bias
 Diodes (Cont...)
Diode Ideal Characteristics

Conduction Region Non-Conduction Region

“Forward Biased” ( Zero resistance) Reverse Biased (Infinite resistance)

• The voltage across the diode is 0 V
• The current is infinite
• The forward resistance is defined as
RF = VF / IF
• The diode acts like a short
• All of the voltage is across the diode
• The current is 0 A
• The reverse resistance is defined as
RR = VR / IR
• The diode acts like open
 Diodes (Cont...)
Semiconductor Materials

Materials commonly used in the development of

semiconductor devices:

• Silicon (Si)
• Germanium (Ge)
• Gallium Arsenide (GaAs)
 Diodes (Cont...)
Doping
The addition of small amounts of impurities drastically affects its properties
The electrical characteristics of silicon and germanium are improved
by adding materials in a process called doping.

There are just two types of doped semiconductor materials:

n-type  The majority carriers in n-type materials are electrons.
p-type  The majority carriers in p-type materials are holes.
 Diodes (Cont...)
Diode Operating Conditions

No Bias
• No external voltage is applied: VD = 0 V
• No current is flowing: ID = 0 A
• Only a modest depletion region exists
 Diodes (Cont...)
Diode Operating Conditions

Reverse Bias
External voltage is applied across the p-n junction in
the opposite polarity of the p- and n-type materials.

• The reverse voltage causes the

depletion region to widen.
• The electrons in the n-type material
are attracted toward the positive
terminal of the voltage source.
• The holes in the p-type material are
attracted toward the negative
terminal of the voltage source.
 Diodes (Cont...)
Diode Operating Conditions

Forward Bias
External voltage is applied across the p-n junction in
the same polarity as the p- and n-type materials.

• The forward voltage causes the

depletion region to narrow.
• The electrons and holes are pushed
toward the p-n junction.
• The electrons and holes have
sufficient energy to cross the p-n
junction.
• gallium arsenide diode ≅ 1.2 V
• silicon diode ≅ 0.7 V
• germanium diode ≅ 0.3 V
 A Diode Puzzle 1
Which lamps are alight? Some may not be full brightness.

+ +
- -
 A Diode Puzzle 1
Which lamps are alight? Some may not be full brightness.

+ +
- -
 A Diode Puzzle 2
Which lamps are alight? Some may not be full brightness.

+ +
- -
 A Diode Puzzle 2
Which lamps are alight? Some may not be full brightness.

+ +
- -
Diodes (Cont...)
 Diode Equation
qvD vD
iD IS exp 1 IS exp 1
nkT nVT

where IS = reverse saturation current (A)

vD = voltage applied to diode (V)
q = electronic charge (1.60 x 10-19 C)
k = Boltzmann’s constant (1.38 x 10-23 J/K)
T = absolute temperature
n = nonideality factor (dimensionless)
VT = kT/q = thermal voltage (V) (25 mV at room temp.)

IS is typically between 10-18 and 10-9 A, and is strongly temperature dependent

due to its dependence on ni2. The nonideality factor is typically close to 1, but
approaches 2 for devices with high current densities. It is assumed to be 1 in this
text.
 Modeling the Diode Forward
Characteristics
• Circuit analysis
• Graphical analysis
• Iterative analysis
Jika Vs = 6V R1=Rs=RL=500 ohm gambarkan grafik hubungan Id dan Vd
 Diodes (Cont...)
Resistance Levels

Semiconductors react differently to DC and AC currents.

• DC (static) resistance
• AC (dynamic) resistance
• Average AC resistance
 Diodes (Cont...)
Resistance Levels  DC (Static) Resistance

For a specific applied DC voltage VD, the diode has a specific current ID,
and a specific resistance RD.

VD
RD
ID
 Diodes (Cont...)
Resistance Levels  AC (Dynamic) Resistance
In the forward bias region:
26 mV
rD ' rB
ID
• The resistance depends on the amount of current (ID) in the diode.
• The voltage across the diode is fairly constant (26 mV for 25 C).
• rB ranges from a typical 0.1 Ω for high power devices to 2 Ω for low
power, general purpose diodes. In some cases rB can be ignored.

In the reverse bias region:

rd =∞

The resistance is effectively infinite. The diode acts like an open.

 Diodes (Cont...)
Resistance Levels  Average AC Resistance

VD
ravg
ID
Diodes (Cont...)
Diode Equivalent Circuit
Diodes (Cont...)
Other Types of Diodes
 v1 12 v1 11
KCL better: 0
5 4
 Ideal Model for Diode
Example 3 - two-diode circuit (cont.)
Analysis: The ideal diode model is chosen.
Assumption 1. Since the 15-V source appears to force
positive current through D1 and D2, and the -10-V
source is forcing positive current through D2, assume
both diodes are on.
Since the voltage at node D is zero due to the short
circuit of ideal diode D1,
Assumption 2.
(15 0)V
Since current in D2 is valid, I1 1.50 mA
10k
but that in D1 is not, the 0 10V
second guess is D1 off and ID 2 2.00 mA
5k
D2 on. I1 ID1 ID 2 | ID1 1.50 2.00 0.500 mA

But, ID1 < 0 is not allowed by the diode, so try again.

 Ideal Model for Diode
Example - two-diode circuit (cont.)

Since the current in D1 is zero, ID2 = I1,

15 10,000I1 5,000I D2 10 0
25V
I1 1.67 mA
15,000

VD1 15 10,000I1 15 16.7 1.67 V

Assumption 2.
Since current in D2 is valid, Q-Points are D1 : (0 mA, -1.67 V):off
but that in D1 is not, the
D2 : (1.67 mA, 0 V) :on
second guess is D1 off and
D2 on. Now, the results are consistent with the
assumptions.