IGBT MODULE ( N series ) n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 1200 V
Gate -Emitter Voltage VGES ± 20 V
Continuous IC 400
Collector 1ms IC PULSE 800
A
Current Continuous -IC 400
1ms -IC PULSE 800
Max. Power Dissipation PC 3100 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. Vis 2500 V
Mounting *1 3.5
Screw Torque Terminals *2 4.5 Nm
Terminals *3 1.7
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
*3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 4.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 60 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=400mA 4.5 7.5 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=400A 3.3 V
Input capacitance Cies VGE=0V 64000
Output capacitance Coes VCE=10V 23200 pF
Reverse Transfer capacitance Cres f=1MHz 20640
tON VCC=600V 0.75 1.2
Turn-on Time
tr IC=400A 0.25 0.6
µs
tOFF VGE=± 15V 1.05 1.5
Turn-off Time
tf RG=1.8Ω 0.35 0.5
Diode Forward On-Voltage VF IF=400A VGE=0V 3.0 V
Reverse Recovery Time trr IF=400A 350 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.04
Thermal Resistance Rth(j-c) Diode 0.12 °C/W
Rth(c-f) With Thermal Compound 0.0125
 Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
T j=25°C T j=125°C
1000 1000

V GE =20V, 15V, 12V, 10V V GE =20V, 15V, 12V, 10V

800 800

[A]
[A]

C
C

600 600

Collector current : I
Collector current : I

400 400
8V

200 8V 200

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

T j=25°C T j=125°C

10 10
[V]

[V]

8 8
CE

CE
Collector-Emitter voltage :V

Collector-Emitter voltage V

6 6

4 4
IC= IC=
800A 800A
400A 400A
2 2
200A 200A

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate-Emitter voltage : V G E [V] Gate-Emitter voltage : V G E [V]

Switching time vs. Collector current Switching time vs. Collector current
V CC =600V, R G =1.8 Ω , V GE ±15V, T j=25°C V CC =600V, R G =1.8 Ω , V GE =±15V, Tj=125°C

t off
t off t on
1000 1000
t on tf
[nsec]

[nsec]

tr
tf
on, t r, t off, t f

on, t r, t off, t f

tr

100 100
Switching time : t

Switching time : t

10 10
0 200 400 600 800 0 200 400 600 800

Collector current : I C [A] Collector current : I C [A]

 Switching time vs. R G Dynamic input characteristics
V CC =600V, I C =400A, V GE =±15V, T j=25°C T j=25°C
1000
25
t off V CC =400V

t on 600V

[V]
800 20
[nsec]

CE
800V
on, t r, t off, t f

1000

Collector-Emitter voltage : V
600 15
tr

400
Switching time : t

10
tf

200 5
100

0 0
1 10
0 1000 2000 3000 4000 5000
Gate resistance : R G [ Ω ]
Gate charge : Q G [nC]

Forward current vs. Forward voltage Reverse recovery characteristics

V GE = O V t rr, I rr vs. I F
1000

T j=125°C 25°C I rr 125°C

rr [nsec]

800 t rr 125°C
[A]

I rr 25°C
rr
[A] F

600
Reverse recovery current : I
:t
Forward current : I

t rr 25°C
Reverse recovery time

400
100

200

0
0 1 2 3 4 5 0 200 400 600 800

Forward voltage : V F [V] Forward current : I F [A]

Reversed biased safe operating area

Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >1.8 Ω
4000

Diode
[C/W]

0,1 3000
[A]
th(j-c)

IGBT SCSOA
Collector current : I

(non-repetitive pulse)
Thermal resistance : R

2000

0,01

1000

RBSOA (Repetitive pulse)

0,001 0
0,001 0,01 0,1 1 0 200 400 600 800 1000 1200

Pulse width : PW [sec] Collector-Emitter voltage : V (CE) [V]

 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage
V CC=600V, R G =1.8 Ω , V GE =±15V T j=25°C
175
[mJ/cycle]

150 100

C oes , C res [nF]

E off 125°C
C ies
125
E off, E rr

100

ies ,
E off 25°C
on,

10

Capacitance : C
75
Switching loss : E

E on 125°C C oes
50
E rr 125°C C res
E on 25°C
25
1
E rr 25°C
0
0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35

Collector Current : I C [A] Collector-Emitter Voltage : V CE [V]

Fuji Electric GmbH Fuji Electric (UK) Ltd.

Lyoner Straße 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60

P.O. Box 702708

P.O. Box 702708-Dallas, - Dallas,
TX 75370 TX -(972)
Phone (972)233-1589
733-1700Fax
- (972)
(972)381-9991
233-0481 (fax)
www.collmer.com