ECE GATE Practice Questions With Solutions Volume-2

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GATE
PRACTICE BOOKLET
Electronics & Communication

Engineering
(Volume - II)
Electronic Devices & Circuits, Electromagnetics, Communication Systems,
Engineering Mathematics & General Aptitude (Verbal & Numerical Ability)
1116 Expected Questions with Solutions
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Foreword
GATE in Electronics & Communication Engineering
GATE PRACTICE BOOKLET (Bits & Bytes)
(VOLUME - II )
Dear Students,
Solutions of all previous GATE Questions are already available. Every year about
20% of questions will have repetitive nature. However, rest of the questions are from
untapped areas (never asked areas) and few from Previous Engineering Services & Civil
Services Questions. Keeping this in view, possible questions are prepared in various
subjects (chapter wise) along with their hints/solutions. The student is advised to
practice the questions systematically so that their chances of getting high score in GATE Exam will
increase.
The student is advised to solve the problems without referring to the solutions. The student has to
analyze the given question carefully, identify the concept on which the question is framed, recall
the relevant equations, find out the desired answer, verify the answer with the final key such as (a),
(b), (c), (d), then go through the hints to clarify his answer. This will help to face numerical answer
questions better. The student is advised to have a standard text book ready for reference to strengthen
the related concepts, if necessary. The student is advised not to write the solution steps in the space
around the question. By doing so, he loses an opportunity of effective revision.
As observed in the GATE Exam, number of sets may be possible, being online exams. Hence, don’t
skip any subject. All are equally important.
It is believed that this book is a Valuable aid to the students appearing for competitive exams like IES,
ISRO and Other PSU’s. This book can also be used by fresh Teachers in Engineering in improving
their Concepts.
With best wishes to all those who wish to go through the following pages.
Y.V. Gopala Krishna Murthy,

M Tech. MIE,
Chairman & Managing Director,
ACE Engineering Academy,
ACE Engineering Publications.
Electronics & Communication Engineering
GATE PRACTICE BOOKLET (Bits & Bytes)
(VOLUME - II )
MAIN INDEX
S.No. Name of the Subject Page No.
1 Electronic Devices & Circuits 1 - 76
2 Electromagnetics 77 - 166
3 Communication Systems 167 - 267
4 Engineering Mathematics 268 - 325
5 General Aptitude (Verbal & Numerical Ability) 326 - 363

Chapter 1 Semiconductor Physics
Volume ‐ II (1116 – Questions) 05. The mobilities of electron and hole in
silicon are respectively 1350 cm2/V-sec and
480 cm2/V-sec and intrinsic carrier
01. An n-type silicon bar of 0.1 cm long and
concentration of silicon is 1.5  1010/cm3.
100 m2 in cross sectional area has a Then find the majority and minority
majority carrier concentration of concentrations of a p-type semiconductor
5  1020/m3 and the carrier mobility is which is having resistivity of 10  -cm.
0.13 m2/V-s at 300 K. If the charge of an (a) 1.31015 cm-3 and 1.73105 cm-3
electron is 1.610–19 coulomb, then the (b) 1.31016 cm-3 and 1.73104 cm-3
resistance of the bar is
(c) 1.31014 cm-3 and 1.73106 cm-3
(a) 108  (b) 104 
(d) 1.31015 cm-3 and 1.73108 cm-3
(c) 961.5 k (d) 960 M
02. The electron and hole concentrations in an 06. In a semiconductor, it is observed that
intrinsic semiconductor are ni and pi (3/4)th of the current is carried by electrons
respectively. When doped with a p-type and (1/4)th by holes. If the drift speed of
material, these change to n and p, electrons is two times that of holes, the
respectively. Then relation between electron and hole
(a) n + p = ni + pi concentrations is
(b) n + ni = p + pi (a) n = 1.5 p (b) n = 2 p
(c) npi = ni p (c) n = 3 p (d) p = 1.5 n
(d) np = ni pi
07. The intrinsic carrier concentration of silicon
03. Two initially identical samples A and B (Eg = 1.12eV) at 300K is 1.51010cm-3,
of pure germanium are doped with
then the value of ni for Si at 400K
donors concentrations of 1  1020 m-3 and
(Boltzmann constant K = 8.6210-5eV/K).
3  1020 m–3 respectively. If the hole
concentration in A is 9  1012 m-3, then the (a) 1.51010cm-3 (b) 3.21011cm
hole concentration in B at the same (c) 5.21012cm-3 (d) 6.81013cm-3
temperature will be
(a) 3  1012 m-3 (b) 7  1012 m-3 08. Find the conductivity of the n-type silicon,
(c) 11  1012 m-3 (d) 27  1012 m-3 which is doped with ND = 1017cm-3.
Assuming 50 percent of the donors are
04. Silicon contains 5  1028 atoms per cubic ionized at 300K.
metre. If it is doped with two parts per
(n(si) = 1000, p(si) = 350, n(Ge) = 3500
million of arsenic, then the electron density
at room temperature will be approximately and p(Ge) = 1500 are in cm2/V-sec)
(a) 4  1023 m-3 (b) 1023 m-3 (a) 8(-cm)-1 (b) 12(-cm)-1
(c) 2  106 m-3 (d) 104 m-3 (c) 16(-cm)-1 (d) 10(-cm)-1
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:4: Electronic Devices
09. The current density of n-type germanium is Codes:

100 A/m2 and the resistivity of 0.5 –m. If A B C
the mobility of electron is 0.4 m2/V-sec. (a) 5 4 3
The drift velocity is _______m/sec (b) 4 3 5
(c) 5 1 2
10. n-type devices are preferred over p-type (d) 5 2 3
devices because of the following reason.
14. The current produced in a Ge sample of
(a) Mobility of hole > Mobility of electron area 1 cm 2 and length 0.3 mm when a
(b) Mobility of hole = Mobility of electron potential difference of 2V is applied across
(c) For same doping n type materials give it [Assume n i = 2  10 19 m – 3,
less current than p type materials n= 0.35 m 2 / V-sec and
(d) For same doping n type materials give p = 0.17 m2/ V-sec]
more current than p type materials (a) 2 A (b) 1.11 A
(c) 0.5 A (d) 100 mA
11. The majority carriers in an n-type 15. The diffusion current in a sample of Ge
semiconductor have an average drift having concentration gradient for electrons
velocity() in a direction perpendicular to a of 1.5  1022 electrons/m4 is ______ A/m2
uniform magnetic field B. The electric field [Assume the diffusion constant for electrons
E induced due to Hall effect acts in the = 0.00120 m2/sec]
direction
16. In a semiconductor sample the electron
(a)   B (b) B  
and hole mobilities are 0.15m2/V–S and
(c) along  (d) opposite to  0.06m2/V–S respectively. The diffusion
constant for electrons is 3.75  10-3 m2/sec.
12. Mobility of extrinsic semi conductor The diffusion constant for holes is
depends on (a) 1.55  10-3 m2/s (b) 15.5  10-3 m2/s
(a) temperature (c) 1.55  10-3 cm2/s (d) 155  10-3cm2/s
(b) electric field intensity
17. 2 volts supply is applied to the
(c) both
semiconductor bar of length 2 m.
(d) none Then magnitude of electric field (in V/m) at
x = 0.5 m is
13. In an extrinsic semiconductor if (a) 4  106 (b) 106
(a) The resistivity decreases (c) 2  106 (d) 3  106
(b) The temperature increases
18. In an N - type semiconductor, the position
(c) The photo conductivity is low
of the Fermi level
1. The doping concentration is low (a) is lower than the center of the energy
2. The length of the semi - conductor is gap
reduced Resistivity is negative (b) is at the center of the energy gap
3. The band gap is high (c) is higher than the center of the
4. Resistance decreases energy gap
(d) can be anywhere depending upon the
5. The doping concentration is increased doping concentration
:5: Semiconductor Physics
19. The current in a forward biased p+n junction (a) 310C (b) 10K
diode is entirely due to diffusion of holes (c) 310K (d) 300K
from p-side to n-side of the junction over
the distance L = 10–3 cm. The incremental 24. An n-type semiconductor has its Fermi level
change in the hole concentration on n-side at 0.25 eV below the conduction band
at the junction is p(0) = 1012 cm-3. edge. If the density of semiconductor in
The current density in the diode assuming conduction band at room temperature
that the diffusion coefficient of holes is is 2.511025/m3, the majority carrier
12 cm2/sec ______ mA/m2. concentration is
(a) 1.6  1011 /m3 (b) 1.6  1021 /m3
20. Assuming the Fermi level EF to be (c) 2.5  1022 /m3 (d) 1.6  1014 /m3
independent of temperature, EF may be
defined as the level with an occupancy 25. Match List – I (Parameter for silicon) with
probability of List – II(values in MKS units) and select the
(a) 0 % (b) 50 % correct answer using the codes given below
(c) 75 % (d) 100 % the lists:
List – I
21. The effect of doping in intrinsic A. Electron mobility
semiconductors is to B. Electron diffusion constant
(a) move the Fermi level away from the C. Diffusion length (hole)
center of the forbidden band D. Product of electron and hole concentration
(b) move the Fermi level towards the center
the forbidden band List – II
(c) change the crystal structure of the 1. 5  1028
semiconductor 2. 0.13
(d) keep the Fermi level at the middle of the 3. 2.25  1032
forbidden band
4. 0.0035
22. Which of the following statements are 5. 0.002
wrong. Codes:
1. Fermi level is closer to conduction band A B C D
in n-type. (a) 2 4 5 1
2. Fermi level is not used for intrinsic semi (b) 4 2 1 3
conductor. (c) 2 4 5 3
3. Fermi level in P side of tunnel diode is (d) 4 2 3 5
inside conduction band
4. Fermi level comments on 50% 26. Match List – I (Semiconductor parameters)
occupancy. with List – II (Physical processes) and
(a) 1 & 4 (b) 2 & 3 select the correct answer using the codes
(c) 1 & 2 (d) 3 & 4 given below the lists:
23. Given Donor concentration as List – I
19 –3
2.63  10 cm in silicon sample, then the A. Impurity Concentration
temperature at which Fermi level coincides B. Carrier mobility
with edge of conduction band is [Assume C. Carrier lifetime
mn = m] D. Intrinsic carrier concentration
List – II 29. A sample of Si is doped with 1.0  1017

1. Recombination phosphorous atoms/cm3. If the applied
2. Band to Band transition current is 1 mA and magnetic field strength
3. Scattering is 10–5 Wb/cm2, the magnitude of Hall
4. Ion implantation voltage in a sample of 100 m thick is
_____ V.
Codes:
A B C D
30. A Si sample is doped with Arsenic.
(a) 3 4 2 1 Assume effective densities of states at edge
(b) 4 3 2 1 of conduction band NC = 8.851018 cm-3 &
(c) 3 4 1 2 KT = 0.026 (EC, EV are edges of
(d) 4 3 1 2 conduction band, valence band respectively)
Find location of Fermi level (EF) if doping
27. The magnitude of induced hall voltage VH concentration is 4.41  1014 cm-3
in the given Figure is (Given n-type (a) EF coincides with EC
Germanium bar with
(b) EF lies 0.257 eV above EC
doping = 1.5  106 cm-3, BZ = 0.5 wb/m2,
(c) EF lies 0.257 eV below EC
dy = 4  10-3m, Ex = 700 v/m,
(d) EF lies 0.257 eV below intrinsic Fermi
n = 0.38 m2 /vsec, Wz = 1  10-3 m)
level
Y
31. As per Hall effect, if any specimen carrying

dY + a current I is placed in a transverse
VH magnetic field B then an electric field `E’ is
Ix – induced in the Specimen in a direction
X
Lx W (a) parallel to I
BZ FY EY
Z (b) perpendicular to B and parallel to I
(c) parallel to I and B
(a) 133 mV (b) 133 V (d) perpendicular to both I and B
(c) 532V (d) 532 mV
32. Which of the following is the unit of
28. Calculate majority and minority carrier mobility to diffusion constant ratio?
concentrations to convert an intrinsic
Silicon into an n- type silicon of resistivity (a) Per Volt (b) Volt
(c) cm2/V-s (d) V/cm2
of 10 ohm-cm. [n = 1350 cm2/V-sec,
ni = 1.5  1010 cm–3]
(a) 4.631015 cm-3 and 4.86105 cm-3 33. The relationship between mobility (),
(d) 4.631016 cm-3 and 4.86104 cm-3 conductivity () and Hall coefficient (RH)
(d) 4.631014 cm-3 and 4.86105 cm-3 (a)  =  RH (b)  =  RH
(d) 4.631015 cm-3 and 4.86108 cm-3 (c) RH =   (d)   R 2H 
:7: Semiconductor Physics
34. In Hall effect, which of the following is true (a) 500, 13 (b) 1000, 50
(a) Magnetic Field & Electric Field are (c) 250, 5 (d) 350, 20
induced
(b) Magnetic Field is induced & electric
field is applied 38. The Hall coefficient of a specimen of doped
silicon is found to be 3.6610-4 m3/C; the
(c) Magnetic field is applied & electric
resistivity of the specimen is 8.9310-3-m.
field is induced
Assuming single carrier conduction, then
(d) Hall voltage has same polarities for the mobility of the charge carriers_______
both n & p type semiconductors cm2 / V-s
35. Determine the percentage of si atoms that

39. At 50 K or 100K charge carriers are
contribute a conduction electron hole pair
generated in an extrinsic semiconductor.
at 300K, (given silicon concentration as
4.991022 atoms/cm3, ni = 1.48  1010cm–3). Which of the following reason is true ?
Assume that a covalent bonded (a) Band to band transition
semiconductor contributes approximately (b) Impurity Ionization
one electron hole pair per atom to the
current conduction process. (c) EHP generation
(a) 0.297  10- 10 (b) 3.367  10- 10 (d) Lattice defects will not get introduced
into band structure
(c) 0.438  10 – 2 (d) 2.27  10- 2
36. Find the density of valence band electrons 40. Find the concentration of atoms in an
available to form conduction current. For a intrinsic germanium given
copper specimen given density = 8.92
gm/cm3, Atom weight = 63.54 g/mole and A0 = 6.021023 atoms/mole,
Avagadro’s number = 6.023  1023. Atomic Weight, A = 72.6 gm/mole
(a) 429.03  10 cm 22 -3
& density, d = 5.32 gm/cm3
(b) 858.06  1022 cm- 3 (a) 4.41 1022 atoms/cm3
(c) 16.9  1022 cm- 3 (b) 82.15 1023 atoms/cm3
(d) 8.45  1022 cm- 3 (c) 0.2261022 atoms/cm3
(d) 0.0121023 atoms/cm3
37. Assume that we have an infinitely long
o
n-type semiconductor bar at 300 K with an
electric field of 1000 V/cm in the positive 41. Two semiconductor materials have same
X-direction. At t = 0, electron-hole properties except that material 1 has band
pairs are generated at x = 0 by a gap at 0 K as 1.1eV and material 2 has a
light pulse. At t = 1 sec, the charge band gap at 0K as 1.21 eV. The ratio of
concentration maximum is measured as a square of intrinsic concentration of material
function of x, and it occurs at xp = 0.5 cm. 2 to material 1 is
The mobility (in cm2/V-sec) and diffusion (a) 0.1204 (b) 0.0145
constant (in cm2/sec) of holes respectively
(c) 68.71 (d) 8.289
are
42. Statement (I): Hall crystal can be used as a 44. The minimum value of  for silicon is
multiplier of two signals. (a) 3.87  10–6 ( - cm)-1
Statement (II): Hall voltage is proportional
to the currents and voltages applied in (b) 1.935  10–6 ( - cm)-1
perpendicular directions across the Hall (c) 2.58  10–6 ( - cm)-1
crystal. (d) 1.29  10–6 ( - cm)-1
43. Statement (I): An n-type semiconductor

behaves as an intrinsic semiconductor at
very high temperatures
Statement (II): The breaking of the
covalent bonds becomes a significant
phenomenon at high temperatures.
Chapter 1 Semiconductor Physics
Volume ‐ II (1116 – Solutions)

04. Ans: (b)
Sol: Number of silicon atoms = 51028 atoms/m3
Doped with 2 parts per million of arsenic
01. Ans: (c) means 2 arsenic atoms added for each 106
Sol: Conductivity of si due to majority carriers is silicon atoms
n = ND qn 5  10 28
Number of arsenic atoms = 2
= 51020 1.6 10–19 0.13 10 6
n = 10.4 (–m)–1 = 1023 atoms/m3
1 Each arsenic atom will give one e– at room
Resistivity  = = 0.09615 -m temperature. Assuming all the atoms are
n
ionized.
l Number of electrons = 1023/m3
Resistance = R =
A
05. Ans: (a)
0.09615  0.1  102
= Sol: Given resistivity () = 10 ohm –cm
100  1012 Conductivity = 0.1 (ohm - cm)–1
R = 961.5 k Given intrinsic silicon to p-type silicon
conversion
02. Ans: (d) For p-type majority carriers = holes = NA
Sol: intrinsic carrier concentrations are, n i2
ni = pi Minority carriers = ND =
NA
according to mass action law
 = nqn + pqp
n.p = n i2 0.1 = 1.6 10–19 (ND n +NA p)
n.p = ni (pi)  n2 
n = number of electrons in p-doped 0.1 = 1.6  10 19  i  n  N A  p 
p = number of holes in p-doped  NA 
0.1 = 1.6 10–19 (NA480)
03. Ans: (a)  n i2 
Sol: For sample A   n  1.6  10 19  0
 NA 
donor concentration ND = 11020m–3
NA = 1.3 1015cm–3
hole concentration p = 91012
By mass action law n i2 2.25  10 20
ND = 
NDp = n i2  n i2  1  10 20  9  1012 NA 1.3  1015
= 1.73 105 cm–3
n i2  9  10 32
For sample B
06. Ans: (a)
donor concentration ND = 31020m–3
Sol: I due to electrons  In = nqn EA
n2 9  10 32 I due to holes  IP = pq P EA
hole concentration = i =
ND 3  10 20 3
Given In = (I)
= 31012 m–3 4
: 10 : Electronic Devices
1 1 1
IP ( I) Conductivity   
4 Re sistivity 0.5
In nq n EA n n = 2(-m)-1
3  
IP pq p EA p p 100 A/m = 2(-m)-1 E
2
n 3 p   dp  E = 50 V/m
  3  [  d = E] Drift velocity vd = n E
p n   dn  vd = 0.4  50
n 1  vd = 20 m/sec.
 3  = 1.5
p 2
10. Ans: (d)
07. Ans: (c) Sol: The current and mobility are related as
Sol: Given Eg = 1.12 eV. J  E
n i2  A 0 T 3 e  E G / kT J  (ne n  pe p ) E
3/ 2  EG  1 1  Current, I= J.A
n i1  T1    
2 k  T1 T2  Hence I  
  e
n i 2  T2  The current through a semiconductor device
1.5  1010  300 
3/ 2 1.12
5
 1
 
1 
 directly proportional to the mobility of
  e 8.6210 2  300 400 
charge carriers.
ni2  400  We know mobility of electrons is more than
3/ 2
3 that of holes  n   p
  e 5.4
4 Hence for the same doping levels, n-type
1.5  1010 materials give more current than p-type
 2.9 10 3 materials.
n i2
ni2 = 5.18  1012 / cm3 11. Ans: (b)
Sol: Induced electric force
08. Ans: (a) Fn = –q(vn  B) (for n-type)
Sol: According to charge neutrality principle. Fn
n + NA = p + ND En   v n  B
q
n = number of electrons in conduction band
E n   v n  B 
p = number of holes in valence band.
NA = number of acceptors ionized E=Bv
ND = number of donors ionized
1 12. Ans: (c)
n+0 = 0  1017
2 Sol: For an extrinsic semiconductor mobility
n = 0.5  1017    Tm
conductivity = nnq and drift velocity d = E
conductivity of si sample = si = nn q E = Electric field
= 0.5  1017  (1000)1.6  10-19 When, drift velocity saturated at
= 8 (-cm)-1  = 107 cm/sec

Then  
09. Ans: 20 E
Sol: n-type germanium current density 1
Jd = nqn E =E = 100 A/m2 
E
: 11 : Semiconductor Physics
So, in an extrinsic semiconductor mobility DP Dn

depends on both temperature and electric   KTeV  .
p n
field
Given, n = 0.15 m2/V-s
13. Ans: (a) p = 0.06 m2/V-s
Sol: In an extrinsic semiconductor,
(A) If doping concentration is increased, Dn = 3.75  103 m2/sec
conductivity is increased so the  p 
D P   D n  1.5  10 3 m 2 / sec
resistivity decreases.  n 
(B) As the temperature increases,
conductivity increases and resistivity 17. Ans: (b)
decreases. So, it exhibits negative Sol: Given that V = 2V, L = 210–4 cm
temperature co-efficient of Resistivity. V 2
(C) By using light energy, if electrons E  4
 10 4 V / cm  10 6 V / m
L 2 10
excited to conduction band from
valence band, this gives photo 18. Ans: (c)
conductivity. The photo conductivity is Sol: In an N-type semiconductor position of
low means the available light energy is Fermi level.
not enough to excite the electrons N 
through band gap. i.e. semiconductor E Fn  E c  KT ln C 
band gap is very high to excite the  ND 
electrons with available light energy.
EC  EV
14. Ans: (b) Centre of the energy gap =
2
Sol: I  n n q  p p q AE
Given pure Ge sample  n = p = ni EC Conduction band
I = ni (n + p) qAE E Fn Fermi level
 2  10 19 0 .35  0 .17 1 .6  10 19 10  4 
 2 

EC  EV
3
 0 .3  10 
2
I = 1.11 A
EV Valence band
15. Ans: 2.88
Sol: Given So Fermi level is above the centre of energy
Concentration gradient gap in N-type semiconductor.
dn
=  1.5  10 22 electrons / m 4
dx 19. Ans: 1.92
dn Sol:
Diffusion current density =  q  D n
dx p(x)
  1.6  10  0.001201.5  10 22 
19
ID = 2.88 A/m2 Incremental change

in holes at junction p(0)
16. Ans: (a) p n0 Minority hole

Sol: In a semiconductor at a temperature (TK)
p-side x=0 n-side
From the Einstein’s relation
Diffusion current density of holes on n-side But, at energy level equal to Fermi energy
dp( x ) level probability of electron occupancy is
=  qD p 50%.
dx
p(x) on n-side is 21. Ans: (a)
p(x) = p n 0  p' (0)e  x / L P Sol: For n-type doping position of Fermi level
p n 0 = thermally generated holes E F n = Ec – KT ln(NC/ND)
Lp = diffusion length of hole = 10–3 cm, If we increase doping, ND increases
given KT ln(NC/ND) decreases, then E F n moves
Dp = 12 cm2/sec
more closer to conduction band. So, it is
p(x) = p n 0  p' (0)e  x / L P moved away from centre of forbidden band.
dp( x ) x / Lp   1  For p-type doping.
 p' (0)e  
dx  Lp  E F p = Ev + KT ln(NC/NA)
dp( x )  1 If we increase doping, NA increase,
 p' (0) 
dx ( x  0 )  Lp  KT ln(NC/NA) decreases therefore E Fp
 1  moves closer to EV. So it is moving away
1012  3   1015 cm 4 from the centre of for bidden gap.
 10 
So in any extrinsic semiconductor as doping
Diffusion current density increases Fermi level moving away from
dp( x ) centre of forbidden gap.
Jn = –qDp
dx  x 0 
22. Ans: (b)
= –1.610–19(12) (–1015) Sol: For an n-type semiconductor
 JD = 1.92 mA/cm2
EC – EF = KT ln N C 
N 
20. Ans: (b)  D
1 Fermi level is closer to conduction band in
Sol: f(E) = ( E  E F ) / KT n-type material
1 e
Fermi level exist in all types of
If EF is independent of temperature
semiconductor.
(i) E >> EF  e ( E  E F ) / KT tends to  Fermi level is the energy level where the
1 probability of occupation of electron is 0.5
f(E) = =0
1  In a tunnel diode ND > NC ; NA> NV
(ii) E << EF  e ( E  E F ) / KT tends to 0 N 
hence EF – EV = KT ln  V 
1  N A0 
 f(E) = =1
1 0 EF – EV is negative in tunnel diode
1 1 Hence Fermi level lies below valance band.
(iii) E = EF  f(E) = 
11 2
23. Ans: (c)
f(E) = Probability of electron occupying
energy level ‘E’ from, the above for the N 
Sol: EFn = EC – KT ln  C 
energy levels above fermi energy level  ND 
probability of electron occupancy = 0
N 
For energy levels below fermi energy level, EFn = EC  KT ln  C   0
probability of electron occupancy is 100%.  ND 
NC = ND 27. Ans: (d)

3
Sol: Y
4.82 1015  m n T  cm 3 =2.63  1019 cm–3
2
 m 
Assume mn = m dY +
Then T = 310K VH
24. Ans: (b) Ix –
Sol: Position of fermilevel in an n-type I x .Bz X
semiconductor with respect to conduction
VH 
.W Z BZ F ELx W
Y Y
band gives as Ix
N   J  .E x
E Fn  E C  KT n C  A
 ND  Ix =  Ex .A
Given EC EFn= 0.25 eV = KT ln (NC/ND)  A = WdY [from the given figure]
 2.51  10 25   =  n
0.25 eV  0.026 n  
 ND  Ix   n Ex. W.dY
ND = 1.6  1021/m3 . n .E X .W.d Y .B Z
VH 
.W
25. Ans: (c)
Sol: For silicon VH = n Ex dYBZ
VH = 0.38 × 700 × 4 × 10–3 × 0.5
(a) electron mobility = 1300 cm2/V-sec
= 532×10–3 V
= 0.13 m2/ V-sec
(b) electron diffusion constant = D 28. Ans: (c)
= VT = (0.13) (0.0254) Sol: For intrinsic to n-type conversion
= 0.0035 m2/sec Majority carrier concentration = ND
(c) diffusion length of hole = 0.002 m n i2
(d) product of electron and hole concentration Minority carrier concentration = NA =
ND
np = n i2  1.5  1010  = 2.251020 /cm6
2
 = ND n q
np = n i2  2.25  10 32 m 6 0.1 = ND 13501.6 10–19
26. Ans: (d) ND = 4.63 1014 cm–3
Sol: (a) Impurity concentration is added in the n i2 2.25  10 20
NA  
process of ion-implantation by adding N D 4.63  1014
dopants. N A  4.86  10 5 cm 3
(b) when the temperature increases lattice
vibrations increases, so the free e– 29. Ans: 62.5
present in crystal collides with atoms and
Sol: Hall voltage VH  BI
mobility of carriers changes. This is W
called scattering mechanism.  = charge density = ND  q
(c) when the carrier moves freely, after it’s
= 11017 1.6  1019
life time it falls from conduction band
= 1.6 102 C/cm3
and recombination takes place.
10 5  1  10 3
(d) when the temperature increases, band to VH 
band transition takes place and electron 1.6  10  2  100  10  4
hole pairs generated which is known as = 0.625  104
intrinsic carrier concentration. VH = 62.5 V
30. Ans: (c) By using this equation we can calculate the

Sol: As the Si sample is doped with Arsenic mobility of charge carriers by Hall-effect
(V group element), it would form a n-type
semiconductor 34. Ans: (c)
For a n-type material the relation between Sol: Hall Effect: A metal (or) semiconductor
E c & E F is given by specimen carrying a current along its length
N  here ND is dopant
when placed in a Transverse magnetic field;
E c  E F  kT ln c 
 ND  an “Electric field” will be induced in a
concentration direction perpendicular to both current and
 8.851018  magnetic field. This is called “Hall Effect”
EC  EF  0.026ln  eV = 0.026 ln(2 104 )eV
14  so in Hall effect magnetic field is applied
 4.4110 
and electric field is induced
EF lies 0.257 ev below Ec
31. Ans: (d) 35. Ans: (a)
Sol: As per Hall effect it is stated that if any Sol: Given ni = 1.48  1010 cm-3 , the number of
specimen carrying a current I is placed in a Si atoms contributing to a conducting
transverse magnetic field B then an electric electron hole pair.
field ‘E’ is induced in specimen in a Total number of Si atoms
direction perpendicular to both B and I.
  N= 4.99  1022 atoms/cm3
Direction of E = B  I Now percentage of Si atoms contributing
current conduction is given by
32. Ans: (a)
Sol: drift velocity vd =  E cm/sec. ni 1.48  1010
 100   100
v N 4.99  10 22
= d
E = 0.297  10-10
cm / sec cm 2 36. Ans: (d)
 
v / cm V  sec Sol: Avagadro’s number (A0)
Diffusion constant
= 6.023 1023 atoms/mole
D p   p VT
Density (d) = 8.92 gm/cm3
p cm 2 / V. sec
 VT   Atomic weight (A) = 63.54 gm/mole
Dp cm 2 / sec Ad
Atomic concentration = 0
p 1 A
units of is
Dp Volt 6.023  10 23  8.92
=
33. Ans: (a) 63.54
VH W 1 = 8.45  10 atoms/cm3
22
Sol: The Hall constant R H   Density of valence band electrons available

BI ne
for copper
and   ne = (Atomic concentration of Copper
1  number of free electrons per
 
RH atom)
RH = 8.45 1022 atoms/cm3
37. Ans: (a) atoms in a extrinsic semiconductor, because

Sol: Given electric field E = 1000 V/cm they need very low energy of the order of
At t = 0 EHP generated at X = 0 0.03 eV for excitation.
At t = 1 microsecond, maximum occurs at
xp = 0.5 cm C.B
EC
X  X 1 0.5 cm  0
drift velocity  2  Eg(0) = 0.01 eV
T2  T1 1  0s Eg
6
= 0.5  10 cm/sec
Ev
v V.B
Mobility   d
E
n-type Germanium Semiconductor
0.5  10 6

1000 For Ge Eg(0) = 0.01 eV
 = 500 cm2/V-sec For Si Eg(0) = 0.05 eV
Diffusion constant (D) by Einstein’s
relation 40. Ans: (a)
D Aod
 VT Sol: Concentration of atoms =
 A
= 0.026 V at 300K 6.02  10 23  5.32
=
D =  VT = (500) (0.026) 72.6
D = 13 cm2/sec = 4.41 1022 atoms/ cm3
41. Ans: (b)

38. Ans: 414.4
Sol: RH = 3.66  10-4 m3/c. Sol: n i2  A o T 3e  EGo / kT
Resistivity () = 8.93  10-3  - m n i22 A o T 3e  EGo 2 / kT

Assuming single carrier conduction n i21 A o T 3e EG 01 / kT
1
RH =  e  EGo 2 EG 01 / kT  0.0145
ch arg e density
1 1 42. Ans: (c)
Charge density = 
R H 3.66  10 4 Sol: Hall voltage is given by,
= 2.7  103 BIR H
VH 
1 W
Conductivity  = For a given current, hall voltage VH is
resictivity
proportional to magnetic field energy.
1
= = 111.9 i.e.,VH  B. If current I made proportional
8.93 10 3 to one input and if magnetic field density, B
 = (charge density )(mobility) is proportional to second input then hall
111.9 = 2.7  103   voltage is proportional to the product of two
 = 414.4 cm2 /v- sec signals.
39. Ans: (b) 43. Ans: (a)

Sol: The temperature 50K (or) 100K is capable Sol: At very high temperatures band - band
of exciting the donar atoms (or) Acceptor transition (breaking of the covalent bonds
at high temperatures) dominates impurities n p

ionization.  min  (n i p  ni n ) q
p n
Hence n  p  Intrinsic semiconductor.
 min  ( n i  n  p  n i  n  p ) q
 min  2 n i  n  p .q
44. Ans: (a)
1  min  2  1.5  1010 1300  500  1.6  10 19
n 2
  2
Sol: Now n p   n i  p 
i  min  3869.88  10 9 (. cm) 1
pp  n   min  3.869  10 6 (.cm) 1
and  min  ( p p  p  n p  n )q

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1116 Expected Questions with Solutions

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ACE Engineering Publications

Sree Sindhi Guru Sangat Sabha Association,

First Edition : 2011

Y.V. Gopala Krishna Murthy,

S.No. Name of the Subject Page No.

1 Electronic Devices & Circuits 1 - 76

3 Communication Systems 167 - 267

4 Engineering Mathematics 268 - 325

5 General Aptitude (Verbal & Numerical Ability) 326 - 363

09. The current density of n-type germanium is Codes:

List – II 29. A sample of Si is doped with 1.0  1017

31. As per Hall effect, if any specimen carrying

35. Determine the percentage of si atoms that

43. Statement (I): An n-type semiconductor

Volume ‐ II (1116 – Solutions)

So, in an extrinsic semiconductor mobility DP Dn

ID = 2.88 A/m2 Incremental change

16. Ans: (a) p n0 Minority hole

NC = ND 27. Ans: (d)

30. Ans: (c) By using this equation we can calculate the

Sol: The Hall constant R H   Density of valence band electrons available

37. Ans: (a) atoms in a extrinsic semiconductor, because

41. Ans: (b)

39. Ans: (b) 43. Ans: (a)

at high temperatures) dominates impurities n p

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