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Silicon Epitaxial Planar Diode For High Speed Switching: Features
Silicon Epitaxial Planar Diode For High Speed Switching: Features
Silicon Epitaxial Planar Diode For High Speed Switching: Features
Features
• Low capacitance. (C = 2.0 pF max)
• Short reverse recovery time. (trr = 3.0 ns max)
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HSC119 H1 UFP
Pin Arrangement
Cathode mark
Mark
1 H1 2
1. Cathode
2. Anode
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF1 — — 0.8 V IF = 10 mA
VF2 — — 1.2 IF = 100 mA
Reverse current IR — — 0.1 µA VR = 80 V
Capacitance C — — 2.0 pF VR = 0 V, f = 1 MHz
Reverse recovery time*1 trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω
Note: 1. Reverse recovery time test circuit
DC
Supply 3kΩ
0.1µF
Ro = 50Ω Pulse Sampling Rin = 50Ω
Generator Oscilloscope
Trigger
Main Characteristics
1.0 10–4
10–5
Ta=75°C
10–6
–1
10 Ta=50°C
–7
10
Ta=25°C
10–8
10–2
C
25°C
-25°C
10–9
7 5°
Ta =
Ta =
Ta =
10–10
10–3 10–11
0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100
Forward voltage VF (V) Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1
0.1 1.0 10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Package Dimensions
As of January, 2003
Unit: mm
0.3 ± 0.05
0.8 ± 0.10
1.2 ± 0.10
1.6 ± 0.10
0.13 ± 0.05
0.6 ± 0.10