Елметвалли Анас Абделлатиф Махмуд Абделлатиф Group 01-019-1b

(semiconductor diodes)
Questions:

1. Energy-band theory of solids?

- theoretical model describing the states of electrons that can have values
of energy only within certain specific ranges
- The behaviour of an electron in a solid (and hence its energy) is related to the behaviour of all
other particles around it.

2. Intrinsic conductivity of semiconductors. Impurity conductivity of

semiconductors. Donor and acceptor levels.
In Intrinsic conductivity, n=p in room temperature, no free electrons are available
for conduction . if temperature ↑ses , covalent bonds will break f . electrons will be
freed, each electron will leave a hole behind and capture a new hole and the process
continues f charge flows.
The process of adding controlled Impurities to a semiconductor is known as doping
The conductivity of semiconductors may easily be modified by introducing impurities into their
crystal lattice .
A donor or acceptor when introduced into a semiconductor, replaces one of the atoms in the
lattice. The localized state that can accommodate an electron is the donor level.
For eg replacement of a silicon atom with arsenic (donor) or boron (acceptor)

3.Junction of two semiconductors with different conductivity types.

There are two types of dopants , n-type and p-type dopants , n-type dopants act as electron
donors and p-type act as electron acceptors . Combining n-type and p-type semiconductors
creates systems which have useful applications in modern electronics.
When we place p-type and n-type semiconductors in contact with one another, a p-n junction is
formed. p-n junctions are basic components of most common electrical devices
4. Volt-ampere characteristics of a semiconductor diode.
Volt-ampere (V-I) characteristics of a p-n junction or semiconductor diode is the curve between
voltage across the junction and the current through the circuit.
Normally the voltage is taken along the x-axis and current along y-axis

5. Breakdown of a p-n junction. Loss of rectifying capability of a p-n junction at

high temperatures.
Breakdown of a p-n junction is also called Avalanche breakdown. It is moderately doped
and has a thick junction. Avalanche breakdown usually occurs when we apply a high reverse
voltage across the diode.
The effect of increased temperature on the characteristics curve of a P-N junction diode is:

6. Operation principles of electrical circuits used for (a) obtaining volt-ampere

characteristics of diodes and (b) observing the volt-ampere characteristics on an
oscilloscope.

a) In forward-bias, p- side is supplied with a positive potential and n-side is supplied with a
negative potential. Hence, electric field generated is opposite that of the electric field generated
by barrier potential. This leads to the generation of extra carriers on both sides and hence,
reduction of depletion width and barrier potential.
Hence, resistance of the diode becomes very small and it can be approximated to a short circuit
after application of forward cutoff voltage

b) an oscilloscope can be used to measure voltage , it does this by measuring the voltage
dropped across resistor f in the process draws a small current the voltage drop is amplified and
used to deflection electron beam in either x or y axis using an electric field . they are extremely
useful for monitoring f diagnosing electrical circuits