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Darlington: Silicon NPN Triple Diffused Planar Transistor (Complement To Type 2SB1559)
Darlington: Silicon NPN Triple Diffused Planar Transistor (Complement To Type 2SB1559)
2SD2389
B
Darlington (7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
µA 15.6±0.4 4.8±0.2
5.0±0.2
VCBO 160 V ICBO VCB=160V 100max
2.0
1.8
9.6 2.0±0.1
VCEO 150 V IEBO VEB=5V 100max µA
VEBO 5 V V(BR)CEO IC=30mA 150min V
19.9±0.3
4.0
IC 8 A hFE VCE=4V, IC=6A 5000min∗ a ø3.2±0.1
b
IB 1 A VCE(sat) IC=6A, IB=6mA 2.5max V
PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V
2
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz
3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF
1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
60 10 6 10 –5 6 –6 0.6typ 10.0typ 0.9typ b. Lot No.
A
2. A
(V CE =4V)
0m
8m
Collector-Emitter Saturation Voltage V C E (sa t) (V )
5m
10mA
8 1. A
3 8
1.5m
2.
1. 3m A
1.0m A
6 6
0.8 mA 2
4 I C =8A 4
I C =6A
mp)
mp)
0.5mA
mp)
I C =4A
e Te
e Te
e Te
1
Cas
(Cas
(Cas
2 2
˚C (
I B =0.3mA
25˚C
–30˚C
125
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
40000 50000 4
125˚C
DC C urrent G ain h FE
DC C urrent G ain h FE
Typ
25˚C
10000 10000
1
5000 –30˚C
5000
0.5
1000
100
0m
Typ 5
Cut- off F req uenc y f T (MH Z )
D 60
W
C
ith
Collect or Cur ren t I C (A)
80
In
fin
ite
1
he
60 40
at
si
0.5
nk
40
Without Heatsink 20
Natural Cooling
20 0.1
149