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Electronics Circuits: Devices and Analysis ECE220a

I. DIODE EQUIVALENT CIRCUITS

An ​equivalent circuit ​is a combination of elements properly chosen to best
represent the actual terminal characteristics of a device or system in a particular
operating region.
a. Piecewise-Linear Equivalent Circuit
• ​Also known as “​The Complete Diode Model ​“.
• ​The most accurate approximation and includes the barrier
potential, the small forward dynamic resistance and the large
internal reverse resistance.
• ​The ​reverse resistance ​is taken into account because it
provides a path for the reverse current.
• ​When the diode is forward-biased, it acts as a closed switch in
series with the equivalent barrier potential voltage (VB) and the
small forward dynamic resistance.
• ​When the diode is reverse-biased, it acts as an open switch in
parallel with the large internal reverse resistance. The barrier
potential does not affect reverse bias.
• ​In forward biased, the voltage (VF) consists of the barrier
potential voltage plus the small voltage drop across the
dynamic resistance.
• ​This model is generally suited to design problems using a
computer for simulation​.
 Figure 1. The complete model of a diode​.

b. Simplified Equivalent Circuit

• ​Also known as “​The Practical Model”​ .
• ​This model includes the barrier potential.
• ​When the diode is forward-biased, it is equivalent to a closed
switch in series with a small equivalent voltage source (​V​F​) equal
to the barrier potential (0.7 V) with the positive side toward the
anode.
• ​This equivalent voltage source represents the barrier potential that
must be exceeded by the bias voltage before the diode will
conduct and is not an active source of voltage.
• ​When conducting, a voltage drop of 0.7 V appears across the
diode.
• ​When the diode is reverse-biased, it is equivalent to an open
switch just as in the ideal model.
• ​The barrier potential does not affect reverse bias.
• ​In forward bias, the barrier potential is included and the dynamic
resistance is neglected, the diode is assumed to have a voltage
across it.
• ​The diode is assumed to have zero reverse current.
• ​The practical model is useful when you are troubleshooting in
lower-voltage circuits and when designing basic diode circuits
• ​In this model, the 0.7 V drop across the diode may be significant
and should be taken into account.
 Figure 2. The practical model of a diode.

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c. Ideal Equivalent Circuit
• ​The Ideal Diode Model ​is ​the least accurate approximation and
can be represented by a simple switch.
• ​When the diode is forward-biased, it ideally acts like a closed (on)
switch
• ​When the diode is reverse-biased, it ideally acts like an open (off)
switch
• ​the barrier potential, the forward dynamic resistance, and the
reverse current are all neglected.
• ​Since the barrier potential and the forward dynamic resistance are
neglected, the diode is assumed to have a zero voltage across it
when forward-biased.
• ​Since the reverse current is neglected, its value is assumed to be
zero
• ​The reverse voltage equals the bias voltage.
• ​This model is adequate for most troubleshooting, when you are
trying to determine if the diode is working properly, or to figure out
the operations of a circuit and are not concerned with more exact
values of voltage or current​.
​Figure 3. The ideal model of a diode.

Figure 4. Diode
Equivalent Circuits Model
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II. TRANSITION and DIFFUSION CAPACITANCE

It is important to realize that:
​Every electronic or electrical device is frequency sensitive.

In general,
​ he transition capacitance is the predominant capacitive effect in the reverse-bias
T
region whereas the diffusion capacitance is the predominant capacitive effect in the
forward-bias region.

III. REVERSE RECOVERY TIME

• ​In the forward-bias state, a large number of electrons from the ​n ​-type material
progressing through the ​p ​-type material and a large number of holes in the ​n -​ type
material—a requirement for conduction.
• ​The electrons in the ​p -​ type material and holes progressing through the ​n -​ type material
establish a large number of minority carriers in each material. If the applied voltage should
be reversed to establish a reverse-bias situation, we would ideally like to see the diode
change instantaneously from the conduction state to the nonconduction state.
• ​However, because of the large number of minority carriers in each material, the diode
current will simply reverse and stay at this measurable level for the period of time ​t ​s
(storage time) required for the minority carriers to return to their majority-carrier state in the
opposite material. In essence, the diode will remain in the short-circuit state with a current ​I
reverse ​determined by the network parameters. Eventually, when this storage phase has
passed, the current will be reduced in level to that associated with the nonconduction state.
This second period of time is denoted by ​t ​t (​ transition interval).
• ​The reverse recovery time is the sum of these two intervals: ​storage time and transition
interval.​ That is,
Reverse Recovery Time, t​ ​rr t​ ​rr ​= t​s ​+ t​t
• ​This is an important consideration in high-speed switching applications.

• ​Most commercially available switching diodes have reverse recovery time in the range of a
few nanoseconds to 1 ms