PD - 95279

IRF7476PbF
HEXFET® Power MOSFET

Applications VDSS RDS(on) max ID

l High Frequency 3.3V and 5V input Point-
12V 8.0mW@VGS = 4.5V 15A
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
l Power Management for Netcom,
A
Computing and Portable Applications. 1 8
A
S D
l Lead-Free
2 7
S D

3 6
S D
Benefits
4 5
G D
l Ultra-Low Gate Impedance
SO-8
l Very Low RDS(on) Top View
l Fully Characterized Avalanche Voltage
and Current

Absolute Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage 12 V
VGS Gate-to-Source Voltage ±12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current 120
PD @TA = 25°C Maximum Power Dissipation„ 2.5 W
PD @TA = 70°C Maximum Power Dissipation„ 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient „ ––– 50 °C/W

Notes  through „ are on page 8

www.irf.com 1
04/05/06
IRF7476PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 12 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.0 8.0 VGS = 4.5V, ID = 15A ƒ
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– 12 30 VGS = 2.8V, ID = 12A ƒ
VGS(th) Gate Threshold Voltage 0.6 ––– 1.9 V VDS = VGS, ID = 250µA
––– ––– 100 VDS = 9.6V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 9.6V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -12V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 31 ––– ––– S VDS = 6.0V, ID = 12A
Qg Total Gate Charge ––– 26 40 I D = 12A
Qgs Gate-to-Source Charge ––– 4.6 ––– nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 11 ––– VGS = 4.5V
Qoss Output Gate Charge ––– 17 ––– VGS = 0V, VDS = 5.0V
td(on) Turn-On Delay Time ––– 11 ––– VDD = 6.0V
tr Rise Time ––– 29 ––– ID = 12A
ns
td(off) Turn-Off Delay Time ––– 19 ––– RG = 1.8Ω
tf Fall Time ––– 8.3 ––– VGS = 4.5V ƒ
Ciss Input Capacitance ––– 2550 ––– VGS = 0V
Coss Output Capacitance ––– 2190 ––– VDS = 6.0V
Crss Reverse Transfer Capacitance ––– 450 ––– pF ƒ = 1.0MHz

Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 160 mJ
IAR Avalanche Current ––– 12 A

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 2.5
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 120

(Body Diode)  p-n junction diode. S

––– 0.87 1.2 V TJ = 25°C, IS = 12A, VGS = 0V ƒ

VSD Diode Forward Voltage
––– 0.73 ––– TJ = 125°C, IS = 12A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 55 82 ns TJ = 25°C, IF = 12A, VR=12V
Qrr Reverse Recovery Charge ––– 59 89 nC di/dt = 100A/µs ƒ
trr Reverse Recovery Time ––– 54 81 ns TJ = 125°C, IF = 12A, VR=12V
Qrr Reverse Recovery Charge ––– 60 90 nC di/dt = 100A/µs ƒ
2 www.irf.com
 IRF7476PbF

1000 1000
VGS VGS
TOP 10V TOP 10V
8.0V 8.0V
100 5.0V 5.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

100 4.5V
4.5V
3.5V 3.5V
2.7V 2.7V
10 2.0V 2.0V
BOTTOM 1.5V 10 BOTTOM 1.5V

1
1.5V
0.1
1.5V
0.1
0.01
20µs PULSE WIDTH 20µs PULSE WIDTH
Tj = 25°C Tj = 150°C
0.001 0.01
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00 2.0
I D = 15A
ID, Drain-to-Source Current (Α)

100.00 1.5
RDS(on) , Drain-to-Source On Resistance

T J = 150°C
(Normalized)

10.00 1.0

T J = 25°C
1.00 0.5

VDS = 10V
20µs PULSE WIDTH
V GS = 4.5V
0.10 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.5 2.0 2.5 3.0 3.5 4.0
°
VGS, Gate-to-Source Voltage (V) Tj, Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
www.irf.com 3
IRF7476PbF

100000 6
I D = 12A
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED VDS = 9.6V
VDS = 6V
Crss = Cgd 5 VDS = 2.4V
Coss = Cds + Cgd

VGS , Gate-to-Source Voltage (V)

C, Capacitance(pF)

10000 4

3
Ciss
Coss
1000 2

Crss 1

100 0
0 5 10 15 20 25 30
1 10 100
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)

100 100
I SD , Reverse Drain Current (A)

100µsec
T J = 150 ° C
10 10 1msec

10msec
TJ = 25 ° C
1 1
Tc = 25°C
Tj = 150°C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0 1 10 100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRF7476PbF

15
RD
VDS

12 VGS
D.U.T.
RG
+
-V DD
ID , Drain Current (A)

4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6

Fig 10a. Switching Time Test Circuit

3
VDS
90%
0
25 50 75 100 125 150
T ,TCase
c, Case Temperature (°C)
Temperature ( ° C)

10%
Fig 9. Maximum Drain Current Vs. VGS
Case Temperature td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

100
(Z thJA )

D = 0.50

0.20
10

0.10
Thermal Response

0.05

0.02 P DM

1 0.01
t1
SINGLE PULSE
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJA +T A
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000

t 1, Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRF7476PbF

RDS(on) , Drain-to -Source On Resistance (mΩ)

RDS (on) , Drain-to-Source On Resistance (mΩ)

7.5 15.00

13.00
7.3

11.00
VGS = 4.5V
7.0
9.00

6.8 ID = 15A
7.00

6.5 5.00
0 20 40 60 80 100 120 2.0 4.0 6.0 8.0 10.0

ID , Drain Current (A) VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.

QG
50KΩ VGS
12V .2µF
.3µF QGS QGD
+
V 400
D.U.T. - DS
VG ID
VGS TOP 5.4A
3mA Charge 9.6A
IG ID BOTTOM 12A
Current Sampling Resistors 300
EAS , Single Pulse Avalanche Energy (mJ)

Fig 13a&b. Basic Gate Charge Test Circuit

and Waveform 200

15V
100
V(BR)DSS
tp L DRIVER
VDS

RG D.U.T +
V
- DD
0
IAS A 25 50 75 100 125 150
20V
tp 0.01Ω Starting Tj, Junction Temperature (°C)
I AS

Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum Avalanche Energy
and Waveforms Vs. Drain Current
6 www.irf.com
 IRF7476PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

,1&+(6 0,//,0(7(56
',0
' % 0,1 0$; 0,1 0$;
$  $    
$    
E    
    F    
 + '    
( >@ $ (    
   
H %$6,& %$6,&
H %$6,& %$6,&
+    
.    
; H
/    
\ ƒ ƒ ƒ ƒ

H .[ƒ
$
& \

>@
;E $ ;/ ;F

>@ & $ % 

)22735,17

127(6 ;>@
',0(16,21,1* 72/(5$1&,1*3(5$60(<0
&21752//,1*',0(16,210,//,0(7(5
',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@
287/,1(&21)250672-('(&287/,1(06$$
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21'2(6127,1&/8'(02/'3527586,216 >@
02/'3527586,21612772(;&(('>@
',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72
$68%675$7(

;>@ ;>@

SO-8 Part Marking Information

(;$03/(7+,6,6$1,5)026)(7
'$7(&2'(<::
3 ',6*1$7(6/($')5((
352'8&7237,21$/
< /$67',*,72)7+(<($5
;;;; :: :((.
,17(51$7,21$/ ) $ $66(0%/<6,7(&2'(
5(&7,),(5 /27&2'(
/2*2 3$57180%(5

www.irf.com 7
IRF7476PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
Notes: 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. „ When mounted on 1 inch square copper board.
‚ Starting TJ = 25°C, L = 2.3mH
RG = 25Ω, IAS = 12A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2006
8 www.irf.com