sensors

Article
InAs/InAsSb Strain-Balanced Superlattices for
Longwave Infrared Detectors
Tetiana Manyk 1, * , Krystian Michalczewski 1,2 , Krzysztof Murawski 1 , Piotr Martyniuk 1 and
Jaroslaw Rutkowski 1
1 Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;
krystian.michalczewski@wat.edu.pl (K.M.); krzysztof.murawski01@wat.edu.pl (K.M.);
piotr.martyniuk@wat.edu.pl (P.M.); jaroslaw.rutkowski@wat.edu.pl (J.R.)
2 VIGO System S.A. 129/133 Poznanska Str., 05-850 Ozarow Mazowiecki, Poland;
kmichalczewski@vigo.com.pl
* Correspondence: tetjana.manyk@wat.edu.pl; Tel.: +48-261-839-673




Received: 19 March 2019; Accepted: 20 April 2019; Published: 22 April 2019


Abstract: The InAs/InAsSb type-II superlattices (T2SLs) grown on a GaSb buffer layer and GaAs
substrates were theoretically investigated. Due to the stability at high operating temperatures,
T2SLs could be used for detectors operating in the longwave infrared (LWIR) range for different
sensors to include, e.g., CH4 and C2 H6 detection, which is very relevant for health condition
monitoring. The theoretical calculations were carried out by the 8 × 8 k·p method. The estimated
electrons and heavy holes probability distribution in a InAs/InAsSb superlattice (SL) shows that the
wave function overlap increases while the thickness of the SL period decreases. The change in the
effective masses for electrons and holes versus the SL period thickness for the kz -direction of the
Brillouin zone is shown. The structures with a period lower than 15 nm are more optimal for the
construction of LWIR detectors based on InAs/InAsSb SLs. The experimental results of InAs/InAsSb
T2SLs energy bandgap were found to be comparable with the theoretical one. The proper fitting of
theoretically calculated and experimentally measured spectral response characteristics in terms of a
strain-balanced and unbalanced structures is shown.

Keywords: T2SLs InAs/InAsSb; energy bandgap; infrared detectors; LWIR

1. Introduction
Smith et al. [1] in 1987 proposed the use of type-II superlattices (T2SLs) InAs/GaSb as optoelectronic
materials exhibiting excellent electro-optical properties, theoretically comparable to HgCdTe being
the main compound for detection in the infrared radiation (IR) region [2]. In addition, Ga-free T2SLs
InAs/InAs1−x Sbx have been proved to have a longer carrier lifetime (τ) than InAs/GaSb T2SLs [3] and
have been proposed as an alternative for IR photodetectors [4]. The molecular beam epitaxy (MBE)
technology development allowed investigation of the superlattices (SLs) InAs/InAsSb on a GaSb buffer
layer grown on GaAs substrates. The InAs1−x Sbx energy bandgap (Eg ) changes non-linearly versus the
Sb molar composition in the ternary compound. The form of this relation depends on the InAs1−x Sbx
growth method and is given in different forms by research groups [5,6].
In the InAs/InAsSb SLs due to the T2SLs band alignment the electron and hole states are confined
within the InAs (electrons) and InAsSb (holes) layers, and thus electrons and holes are spatially
separated. Therefore, by adjustment of the InAs and/or InAsSb thickness as well as the Sb molar
composition (xSb ), it is feasible to tune Eg within a wide range of IR. Owing to these unique properties,
T2SLs InAs/InAsSb have been chosen as materials for applications in the longwave infrared radiation
(LWIR) detectors operating within the 8–15 µm range. Both photoconductive and photovoltaic

Sensors 2019, 19, 1907; doi:10.3390/s19081907 www.mdpi.com/journal/sensors

that include the rising and potentially unsustainable health and care costs, mainly due to the
increasing prevalence of chronic diseases, and the influence on health of external environmental
factors including climate change, there is a need to have simple devices allowing us to detect and
diagnose e.g., lipid peroxidation, vitamin E deficiency, chronic respiratory disease, cells oxidative
Sensors 2019,
stress, or 19, 1907scleroderma and cystic fibrosis. This could be allowed by e.g., the C2H6 2level
even of 10

monitoring through unexplored LWIR, requiring a proper detector operating in that range. In
addition,
detectors are in constructed.
the LWIR, the twoInAs/InAsSb
T2SLs main detrimental scattering
are mainly used foreffects of Rayleigh
the fabrication and detectors
of barrier Mie are
significantly reduced [12,13].
to include nBn and pBn design [7,8], low-noise interband cascade infrared photodetectors (ICIP) [9,10],
dual The
bandT2SL system wasinfrared
long-wavelength modeled using a variety
photodiodes [11] andofvery
theoretical approaches,
fast avalanche such as
photodiodes the
(APD).
tight-binding, pseudopotential and k·p methods. The k·p method is widely used because of
These detectors can be used for a wide range of applications in the fields of science, medicine, safety, its
proper numerical accuracy. We present a comparison of the responsivity of high operating
industry, and automotive, such as railway safety, gas leak detection, flame detection, heat distribution
temperature (HOT)diagnostic
monitoring, medical LWIR InAs/InAs
imaging,1−xSbx operations,
space T2SLs photoconductors with and
night vision devices simulated absorption
spectroscopy. Since
spectra.
humanity is facing healthcare challenges that include the rising and potentially unsustainable health
and care costs, mainly due to the increasing prevalence of chronic diseases, and the influence on health
2. Materials and Methods
of external environmental factors including climate change, there is a need to have simple devices
The theoretical
allowing us to detectcalculation
and diagnose of band structure,
e.g., lipid Eg and absorption
peroxidation, vitamin E coefficient
deficiency, (α) was respiratory
chronic performed
using thecells
disease, standard k·p (8
oxidative × 8 method)
stress, or evenby the SimuApsys
scleroderma and nextnano
and cystic platforms
fibrosis. This could[14,15].
be allowedIn Figure 1,
by e.g.,
the schematic
C2 H6 levelrepresentation of the unexplored
monitoring through energy bands of therequiring
LWIR, strained aand unstrained
proper detectorInAs/InAsSb
operating inSL is
that
presented.
range. In addition, in the LWIR, the two main detrimental scattering effects of Rayleigh and Mie are
Figure 1reduced
significantly shows [12,13].
that when the SL is coherently strained, all energy parameters are being
changed to include
The T2SL systemconduction
was modeled band offset
using (CBO),
a variety valence band
of theoretical offset (VBO)
approaches, such and
as theEgtight-binding,
of the InAs
(InAsSb) layers. The
pseudopotential bluemethods.
and k·p line corresponds to the lowest
The k·p method conduction
is widely band of
used because (CB), and the
its proper red line
numerical
indicates
accuracy. theWe highest
present valence band (VB).
a comparison of theIfresponsivity
the SL lattice-match to the GaSb
of high operating substrate (HOT)
temperature is takenLWIR
into
account,
InAs/InAs the InAs
Sb
1−x x and
T2SLs InAs Sb layers
photoconductors
1−x x become
with strained
simulated and valence
absorption band
spectra. splits to the heavy (hh)
and light (lh) hole sub-bands in InAs/InAsSb SLs. In Figure 1 the violet line represents the lh
2. Materials
subband edgeand in Methods
the strained SLs and the separation of the hh and lh bands is also visible. The
change in VBO value between the
The theoretical calculation ofstate
bandwithout strain
structure, and absorption
Eg and strained remains within
coefficient (α)0.1 eVperformed
was [16].
usingThe
the k·p (8 × 8k·p
standard method) simulation
(8 × 8 method) wasSimuApsys
by the implemented andto study dispersion
nextnano curves in
platforms [14,15]. In order
Figureto
1,
estimate the SLs’ effective masses. The periodic boundary conditions were
the schematic representation of the energy bands of the strained and unstrained InAs/InAsSb SL used in the simulation
procedure.
is presented. These conditions impose periodicity on the wave functions (WF).

(a) (b)
Figure 1. Schematic representation of (a) unstrained and (b) strained type-II superlattices
Figure 1. Schematic representation of (a) unstrained and (b) strained type-II superlattices (T2SLs)
(T2SLs) InAs/InAs1−xSbx SLs.
InAs/InAs1−x Sbx SLs.

Figure 1 shows that when the SL is coherently strained, all energy parameters are being changed
to include conduction band offset (CBO), valence band offset (VBO) and Eg of the InAs (InAsSb)
layers. The blue line corresponds to the lowest conduction band (CB), and the red line indicates the
highest valence band (VB). If the SL lattice-match to the GaSb substrate is taken into account, the InAs
and InAs1−x Sbx layers become strained and valence band splits to the heavy (hh) and light (lh) hole
sub-bands in InAs/InAsSb SLs. In Figure 1 the violet line represents the lh subband edge in the strained
SLs and the separation of the hh and lh bands is also visible. The change in VBO value between the
state without strain and strained remains within 0.1 eV [5].
The k·p (8 × 8 method) simulation was implemented to study dispersion curves in order to
estimate the SLs’ effective masses. The periodic boundary conditions were used in the simulation
procedure. These conditions impose periodicity on the wave functions (WF).
Sensors 2019, 19, 1907 3 of 10

The parameters of InAs, InSb and GaSb layers used in InAs/InAs1−x Sbx SLs simulation procedure
are presented in Table 1. Parameters are taken from the papers of several authors [5,16–21]. Eg versus
temperature (T) is given by the Varshni form: Eg (T)= E0 −αT2 /(T + β).

Table 1. Material parameters of InAs, InSb and GaSb layers used in simulation.

Parameter InAs InSb GaSb

E0 (Γ) [eV] 0.417 0.235 0.812
E0 (X) [eV] 1.433 0.63 1.141
E0 (L) [eV] 1.133 0.93 0.875
∆so [eV] 0.39 0.81 0.76
me /m0 (0K) 0.026 0.014 0.039
Ev , vac 1.39 1.75 1.78
a = f (T) [Å] 6.0583+2.47×10−5 (T − 300) 6.4794+3.48×10−5 (T − 300) 6.0959+4.72×10−5 (T − 300)

All parameters for ternary compounds used for simulations were estimated based on the bulk
parameters for binary compounds. It should be noted that we considered the symmetrical case when
the Kane parameter, F = 0 [15]. Most parameters assumed in simulations exhibit T dependence and
vary linearly with xSb . In order to calculate some InAs1−x Sbx (0 < xSb < 1) parameters the bowing
shown in the Table 2 was used.

Table 2. Bowing parameter assumed in simulations (T = 230 K).

Bowing Coefficient Bowing Parameter (bbow )

bg [eV] 0.72
b∆so [eV] 1.2
bme/m0 0.035
bv , vac [eV] – 0.47

An equation for ternary compounds parameters, YInAsSb dependence on the bowing coefficient is
defined as:

YInAsSb = (1 − xSb) × YInAs + xSb × YInSb − bbow × xSb × (1 − xSb). (1)

The Luttinger parameters have been estimated based on respective effective masses according to
equations presented by Birner et al. [15] and Vurgaftman et al. [16]. The VBO was determined by the
following equation:
h i
VBO = Ev,vac(InAs) − Ev,vac(InAs) ×(1 − xSb) + Ev,vac(InSb) ×(xSb) − xSb × bv, vac × (1 − xSb) , (2)

where the vacuum energy levels of the valence band (Ev , vac ) and the valence band bowing parameter
(bv , vac ) were presented in Tables 1 and 2, respectively.
All calculated SL structures are strain-balanced on GaSb. The strain-balanced condition is reached
by setting the average lattice parameter of one period weighted with the layer thickness being equal
to the lattice constant of GaSb. The InAs1−x Sbx layer thickness (dInAsSb ) versus xSb , lattice constant
(aInAs(InSb, GaSb) ) and SL period (L) can be calculated from Equation [22]:
!
aGaSb −aInAs L
dInAsSb = × . (3)
aInSb −aInAs x Sb

The lattice constant at 300 K is presented in Table 1. The thickness of the InAsSb layer in
InAs/InAsSb SL structures was determined by relation (3) giving the thickness of the layer being
compensated to zero sum of the strains of all constituent SL layers.
Sensors 2019, 19, x 4 of 11
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3. Results
Sensors and
2019, 19, Discussion
1907 4 of 10
3. Results and Discussion
3.1. Influence of the Period on the Superlattice (SL) Parameters
3. Results and Discussion
3.1. Influence
Figure 2ofshows
the Period
the on the Superlattice
lowest transition (SL) Parameters
energy (Eg-between the first level of CB e1 and VB hh1)
3.1. Influence
versusFigure ofshows
the Period
xSb in 2InAsSb for on
theSL the Superlattice
periods
lowest between(SL)
transition Parameters
10 nm
energy and 40 nm atthe
(Eg-between T = first
230 K.level of CB e1 and VB hh1)
versusFigure 2 depicts
xSb in2 InAsSb that it
forlowest is possible
SL periods to
betweenreach the
10 (E desired
nm-between
and 40 nmE by changes in both xSb and L. When xSb
theatfirst
T =level
230 K.
g
Figure shows the transition energy g of CB e1 and VB hh1 ) versus
and L increase, Eg decreases.
xSb inFigure
InAsSb2 fordepicts that it is
SL periods possible10tonm
between reach
andthe
40 desired
nm at T E=g 230
by changes
K. in both xSb and L. When xSb
and L increase, Eg decreases.

Figure 2. Theoretically simulated Eg for the InAs/InAsSb strain balanced superlattice (SL) structures
versus
Figure
Figure 2. at T = 230 K. simulated
x2.SbTheoretically
Theoretically simulated EEgg for
for the
the InAs/InAsSb
InAs/InAsSb strain
strain balanced
balanced superlattice
superlattice (SL)
(SL) structures
structures
versus xxSb
versus T ==230
at T
Sb at 230 K.
K.
The broken line in Figure 2 indicates an energy equal of 0.1 eV, which allows us to compare the
Figure
difference 2 depicts
between
The broken the
line that it is possible
inthickness
Figure for thetoInAs/InAsSb
2 indicates reach the desired
an energy Eof
g by
0.1changes
strain-balanced
equal in both
SL structures
eV, which allows xSbus
and
with L. When
the samexthe
to compare ESbg.
and
The L increase,
absorption E g decreases.
coefficient presented in Figure 3 was calculated by the commercial
difference between the thickness for the InAs/InAsSb strain-balanced SL structures with the same Eg. SimuApsys
The The
platform broken
according
absorption linetointhe
Figure
coefficient method2 indicatesin an
presented
presented energy
in
Figure [24] equal
3 for
was of 0.1points
selected
calculatedeV, whichtheallows
byfrom this uswith
line
commercial to compare
anotherthe
SimuApsysSL
difference
period. between the thickness for the InAs/InAsSb strain-balanced SL structures
platform according to the method presented in [24] for selected points from this line with another SL with the same E g.
The absorption coefficient presented in Figure 3 was calculated by the commercial
Figure 3 shows that α near the edge of absorption decreases when thickness of the InAs/InAsSb
period. SimuApsys platform
according to3the
SL increases,
Figure method
being
shows that presented
connectedα near thein
with the[23]
edge offor
overlap selected points
of the electrons
absorption from
decreases andthis line
holes
when WFwith
in another
thickness InAs/InAsSbSL period.
SL.
of the InAs/InAsSb
SL increases, being connected with the overlap of the electrons and holes WF in InAs/InAsSb SL.

Figure 3.
Figure α theoretical
3. α theoretical simulation
simulation versus
versus photon
photon energy
energy for
for the
the strain-balanced
strain-balanced SL
SL InAs/InAsSb.
InAs/InAsSb.
Figure
Figure 3. α theoretical
3 shows simulation
that α near the edgeversus photon energy
of absorption for the strain-balanced
decreases when thicknessSL of
InAs/InAsSb.
the InAs/InAsSb
The probability distribution for electrons and heavy holes in InAsSb/InAs SLs is presented in
SL increases, being connected with the overlap of the electrons and holes WF in InAs/InAsSb SL.
FigureThe4. These simulations
probability are at for
distribution T = electrons
230 K for and
xSb = heavy
0.38 and SL period
holes L = 12 nm,SLs
in InAsSb/InAs 20 nm and 29 nm,
is presented in
The probability distribution for electrons and heavy holes in InAsSb/InAs SLs is presented in
respectively. The heavy hole WF is strongly localized within the InAsSb barrier region
Figure 4. These simulations are at T = 230 K for xSb = 0.38 and SL period L = 12 nm, 20 nm and 29 nm, but electron
Figure 4. These simulations are at T = 230 K for xSb = 0.38 and SL period L = 12 nm, 20 nm and 29 nm,
WF spreads out
respectively. Thethrough the structure
heavy hole with significant
WF is strongly probability
localized within of residing
the InAsSb in region
barrier the InAsbutquantum
electron
respectively. The heavy hole WF is strongly localized within the InAsSb barrier region but electron WF
well (QW) region. Figure 4 shows that if the period of the InAs/InAsSb strain-balanced
WF spreads out through the structure with significant probability of residing in the InAs quantum SL increases
spreads out through the structure with significant probability of residing in the InAs quantum well
the
welloverlap of the Figure
(QW) region. electrons and holes,
4 shows that ifWF
the decreases.
period of theTheInAs/InAsSb
values of the overlap are 21.4%,
strain-balanced 14.8%,
SL increases
(QW) region. Figure 4 shows that if the period of the InAs/InAsSb strain-balanced SL increases the
8.7% for the of
the overlap SLthe
period L = 12and
electrons nm,holes,
20 nm,WF 29 decreases.
nm, respectively. The decrease
The values in overlap
of the overlap confirms
are 21.4%, the
14.8%,
overlap of the electrons and holes, WF decreases. The values of the overlap are 21.4%, 14.8%, 8.7% for
reduction of α when SL period increases.
8.7% for the SL period L = 12 nm, 20 nm, 29 nm, respectively. The decrease in overlap confirms the
the SL period L = 12 nm, 20 nm, 29 nm, respectively. The decrease in overlap confirms the reduction of
reduction of α when SL period increases.
α when SL period increases.
Sensors 2019, 19, 1907 5 of 10
Sensors 2019,
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19, xx 5 of 11 11
5 of

(a) (b) (c)

(a) (b) (c)
Figure4.4.Electrons
Electrons andheavy
heavyholes
holesprobability
probabilitydistribution
distributionforfor InAs/InAsSb
SLSL structures
at at 230 for
K
Figure 4. Electronsand
Figure and heavy holes probability distribution forInAs/InAsSb
InAs/InAsSb structures
SL structures230at K230 K
forSL
the theperiod:
SL period:
(a) (a)nm;
12 12 nm;
(b) (b)nm;
20 20 nm;
(c) (c)nm.
29 29 nm.
for the SL period: (a) 12 nm; (b) 20 nm; (c) 29 nm.

Thinperiod
Thin periodInAs/InAsSb
InAs/InAsSb SL SL structures
structures shows
shows that better optical
optical properties
properties and
and thinner
thinnerlayers
layers
Thin period InAs/InAsSb SL structures shows that better optical properties and thinner layers
in SL are more stable in terms of the electrons and holes interaction deeper energy levels. Ascan
in SL are more stable in terms of the electrons and holes interaction in deeper energy levels. As can
in SL are more stable in terms of the electrons and holes interaction in deeper energy levels. As can
beseen
be seenfrom
fromFigure
Figure5,5,when
whenthetheperiod
period of
of SL
SL is
is above
above 15 nm, the position
position of
of lh
lh and
and hh
hh sub-bands
sub-bandsisis
be seen from Figure 5, when the period of SL is above 15 nm, the position of lh and hh sub-bands is
changedaffecting
changed affectingononα.α.In
InSL
SLwith
withaaperiod
periodexceeding
exceeding30
30 nm
nm three
three bands
bands of
of heavy
heavy holes: hh11,, hh
hh22and
and
changed affecting on α. In SL with a period exceeding 30 nm three bands of heavy holes: hh 1, hh2 and
hh lies above the light hole sub-band
hh3 lies above the light hole sub-band lh1
3 lh1 .
hh3 lies above the light hole sub-band lh1.

Figure 5. The CB e1 and VB: hh1, hh2, hh3, lh1 positions versus SL period.
Figure The
5. 5.
Figure CBCB
The e1eand VB:
1 and VB:hhhh
1 ,1hh 2 ,2,hh
, hh hh3 ,3,lh
lh11 positions
positions versus
versus SL
SLperiod.
period.
The electrons and holes effective masses were calculated from the dispersion curves as the
The
second electrons
Thederivative
electrons and
ofandholes
energyholeseffective
byeffective masses
the wave masseswere(k).
vector calculated
were Forcalculatedfrom the
directions in dispersion
from thethe ky ofcurves
kx, dispersion as the second
curves
the Brillouin as the
zone
derivative
second of
derivativeenergy ofby the
energy waveby vector
the wave (k). For
vector directions
(k). For
effective masses hardly change with the SL period but for direction kz dependence of the effective in the
directions k x , k
in
y of
the the
k x ,Brillouin
k y of the zone effective
Brillouin zone
masses hardly
effective
masses versus change
massesSLhardly with
periodchangethe SL period
with the
is significant but
(see for direction
SL Figure
period6). butWhenk dependence
for direction
z xSb increases of the
kz dependenceeffective
the hh effective masses versus
of the masses
effective
SL periodversus
masses
decreases iswhile
significant
SL
both lh(see
period andFigure 6). When
ise1significant
masses (see
increase. xSbFigure
increases
It can 6). the
When
be seen hh that effective
xSban masses
increases
increase in decreases
the whilemasses
hhInAs/InAsSb
the effective both
SL
lhdecreases
and e 1 masses
while increase.
both lh andIt can
e be seen that an increase in
period leads to more significant change in the lh1 mass. Moreover, it should be noted that with aSL
1 masses increase. It can be the
seen InAs/InAsSb
that an increase SL period
in the leads
InAs/InAsSbto more
significant
period
change leadsin change
the to in thesignificant
SLmore
period lh mass.
in1 the rangeMoreover,
change
of 10–20 in itthe
should
nm, lhthe be mass
1 mass.
lh noted that with
Moreover,
slowly a change
it should
increases andbeinstays
the SL
noted period
that
constant withtoina
the range
change
0.1m inofthe
0 while
10–20
with nm,
SL aperiod theinlh
further mass
the
increaserangeslowly
in ofSL10–20increases
period nm, and
the
those lhstays
massesmassconstant to 0.1m
slowly increases
increase and become 0 while withconstant
andsimilar
stays a further
to the hhto
increase
0.1m in SL period those masses increase and become similar
0 while with a further increase in SL period those masses increase and become similar to the hh
masses. to the hh masses.
InInthe
masses. thecase caseofofT2SLs
T2SLsInAs/InAs
InAs/InAs 0.62Sb
0.62 Sb0.38 with the
0.38 with the LL ==14.514.5nm nmat atTT==230 230K, K,the thecalculated
calculatedeffective
effective
masses * ∗ =
massesInof ofee1case
the ,1, hh and
hhofand lh
T2SLslh for
for directions
directions
InAs/InAs in
0.62Sb the
in0.38the kkxx,, k
with (||)
kyy (||)
the and
L =and 14.5k knm (⊥)
zz (⊥) atofof =the
Tthe Brillouin
Brillouin
230 zoneare:
zone
K, the calculated are:m m e|| =
effective
e||
0.019m , m ∗ * = 0.023m , m * = 0.040m , m * = 31.02m , m * = 0.104m , m * = 0.096m .
∗ ∗ ∗ ∗
0.019m0,ofm
masses 0 e⊥ee1, hh= 0.023m
and lh 00, mfor
hh||
hh|| = 0.040min
directions 0 0, mthe
hh⊥hh kx= ,k 31.02m
y (||) and
0 0, m klh||
lh|| z (⊥)= 0.104m , m
of the 0Brillouin
0 lh⊥lh = 0.096m
zone are:
0 0. m* =
e||
0.019m0, me* = 0.023m0, m*hh|| = 0.040m0, m*hh = 31.02m0, m*lh|| = 0.104m0, m*lh = 0.096m0.
 Sensors 2019, 19, x 6 of 11
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Sensors 2019, 19, x 6 of 11

Figure 6. The calculated e1 and hh1, hh2, hh3 and lh1 effective masses for the kz-direction of the
Figure 6. 6.The
Brillouin
Figure Thecalculated
zone versus SLe1period.
calculated eand hh1 , 1hh
1 and hh 2 , 2hh
, hh 3 3and
, hh andlhlh
1 1effective
effectivemasses
massesfor
forthe
thekzk-direction of the
z-direction of the
Brillouin zone versus SL period.
Brillouin zone versus SL period.
In order to explain the shape of the absorption curves in a wider photon energy range, it is
In order to
necessary to consider
explain the shape of the absorption curves
[25]. in a wider photonαenergy range, it is
In order to explain the the polarization
shape of the of the light
absorption curves Figure 7 shows
in a wider photon for both
energy transverse
range, it is
necessary to consider the polarization of the light [24]. Figure 7 shows α for both transverse electronic
necessary to consider the polarization of the light [25]. Figure 7 shows α for both transverse
electronic (TE) and transverse magnetic (TM) mode in the LWIR region for two different SL periods
(TE) andto
equal transverse
L(TE)
= 14.5 magnetic
and L (TM) mode in the LWIR region for two show
different SL periods equal to
electronic andnm transverse = magnetic
25 nm. These
(TM)theoretical
mode in the calculations
LWIR region forfour
two prominent
different SLtransition
periods
L =channels,
14.5 nm and L = 25 nm. These theoretical calculations show four prominent transition channels,
equal to L =namely
14.5 nm e1-hh
and1, Le1=-hh
252, nm.
e1-hh 3 and theoretical
These e1-lh1 contributing to the
calculations TE and
show four TM absorption
prominent in this
transition
namely e1 -hh1 , region.
wavelength e1 -hh2 , The
e1 -hh 3 and e1 -lhstrength
absorption 1 contributing
for TE toisthe TE and
higher thanTM absorption
that for TM in this wavelength
polarization.
channels, namely e1-hh1, e1-hh2, e1-hh3 and e1-lh1 contributing to the TE and TM absorption in this
region. The absorption strength for TE is higher than that for TM polarization.
wavelength region. The absorption strength for TE is higher than that for TM polarization.

(a)
(a)

(b)
Figure 7. The polarization-dependent transverse (b) electronic (TE) and transverse magnetic (TM)
Figure 7. The polarization-dependent transverse electronic (TE) and transverse magnetic (TM) α versus
α versus
Figureenergy in InAs/InAs
7. The polarization-dependent
0.62 Sb 0.32 SL structures at 230
transverse electronic K for the (TE)SL andperiod equal to:magnetic
transverse (a) 14.5 nm, (b)
(TM)
energy in InAs/InAs 0.62 Sb0.32 SL structures at 230 K for the SL period equal to: (a) 14.5 nm, (b) 25 nm.
α25 nm. energy in InAs/InAs0.62Sb0.32 SL structures at 230 K for the SL period equal to: (a) 14.5 nm, (b)
versus
25 nm.
The The transition
transition probability
probability is proportional
is proportional to to
thethe square
square of of thethe optical
optical matrix
matrix element
element perper period.
period.
Figure
Figure The 8transition
presents
8 presents thethe optical
probability
optical matrixmatrix elements
is proportional
elements forthe
to
for the ethe e11-hh
square
1 -hh
,of
, e11-hh e1-hh
the 2,-hh
e1-hh
2 , e1optical
and
3matrix
3 and
e1-lh
e1 -lh 1 transition
1element
transitionperfor for
thethe
period.
TE
andand
TEFigure 8 TM
TM polarization
presents
polarization for for
the the
the optical matrix InAs/InAs
InAs/InAs elements 0.62Sb
Sb
0.62 0.32 for thestrain-balanced
e -hh
strain-balanced
0.32 1 1 , e 1-hh SL
2 , SL
e with
-hh
with
1 3 the
and
the L =
e L
1 =
-lh
25 25
1nm nm at T
=
transition
at T =
for
230 230 K.
the
K.
The optical
TEoptical
The and TM matrix element
polarization
matrix elementfor for
forthe the e
theInAs/InAs -hh transition is larger
0.62Sb0.32 strain-balanced
e1 -hh1 transition
1 1 for TE polarization
SL with the Lthan
is larger for TE polarization than
= 25for for
nmTM.TM. In turn,
at TIn= turn,
230 K.
the optical
The TE-polarized absorption
matrix element for increases
the e1-hh1 sharply
transition near Eg due
is larger fortoTEthe e1-hh1 transition,
polarization than forwhile
TM. In the TM
turn,
the TE-polarized absorption increases sharply near Eg due to the e1-hh1 transition, while the TM
Sensors 2019, 19, 1907 7 of 10

Sensors2019,
Sensors 2019,19,
19,xx 77 of
of 11
11
the TE-polarized absorption increases sharply near Eg due to the e1 -hh1 transition, while the TM
absorptionincreases
absorption
absorption increasesmarkedly
increases markedlyat
markedly athigher
at higherenergies
higher energiesdue
energies dueto
due toeee1-lh
to -lh11transition.
1-lh transition. Figure
transition. Figure 888 shows
Figure shows that
shows thatthe
that the
the
1 1
opticalmatrix
optical
optical matrixelement
matrix elementeee11-hh
element -hh22 has
-hh has no
has no effect
no effect on
effect onthe
on thecoefficient
the coefficientα,
coefficient α,since
α, sinceits
since itsvalue
its valueis
value isalmost
is almostzero.
almost zero.
zero.
1 2

(a)
(a) (b)
(b)
Figure 8.
Figure 8. TETE (a)(a) and
and TM TM (b)—polarized
(b)—polarized the the optical
optical matrix
matrix for
for the
the InAs/InAs
InAs/InAs0.62 Sb0.32
0.62Sb strain
0.32 strain
Figure 8. (a) TE and (b) TM—polarized the optical matrix for the InAs/InAs0.62 Sb0.32 strain balanced
balanced SL for L = 25 nm
balanced SL for L = 25 nm at T = 230 K. at T = 230 K.
SL for L = 25 nm at T = 230 K.
Typical spectra
Typical spectra contains
contains twotwo main
main features
features where
where one
one is is an
an increase
increase of
of absorption
absorption (e
(e11-hh
-hh11)) while
while
the second
the second one
one is
is a
a peak
peak at
at higher
higher energy
energy corresponding
corresponding to
to the
the transition
transition between
between
Typical spectra contains two main features where one is an increase of absorption (e1 -hh1 ) while other
other bands.
bands. From
From
the
the theoretical
the second
theoretical descriptions
one descriptions
is a peak at higher presented
presented above,
above,
energy it follows that
it follows that
corresponding to the two transitions
twotransition
transitions have a great
have aother
between influence
greatbands.
influence on
on
From
α, namely
α,
the namely ee11-hh
theoretical -hh and ee11-lh
11 and
descriptions -lh11presented
(see Figure
(see Figure 7). it follows that two transitions have a great influence on α,
7).
above,
namely e1 -hh1 and e1 -lh1 (see Figure 7).
3.2. Comparison
3.2. Comparison of of the
the Theoretical
Theoretical Simulation
Simulation with with the
the Experimental
Experimental Data Data
3.2. ComparisonT2SLsof InAs/InAsSb
The T2SLs the Theoretical Simulation
InAs/InAsSb were growngrownwith on
the Experimental
GaAs substrates Data by a RIBER Compact 21-DZ
substrates
The were on GaAs by a RIBER Compact 21-DZ
solid-source
solid-source
The T2SLs MBE
MBE system. A
system. A were
InAs/InAsSb 1.2 μm-thick
1.2 μm-thick
grown on GaSb
GaSb
GaAs layer
layer was grown
was grown
substrates by a to to reduce
reduce
RIBER the large
the
Compact large
21-DZ lattice
lattice mismatch
mismatch
solid-source
between
between
MBE GaAs
GaAs
system. substrate
A substrate
1.2 µm-thick andGaSb
and the SLs.
the SLs. Then,
layerThen, 300 periods
300
was grown periods
to reduce 34.3the
34.3 ML
ML InAs/9
InAs/9
large MLmismatch
ML
lattice InAsSb SLs
InAsSb SLs were
were
between
deposited.
deposited.
GaAs Growth
Growth
substrate details
anddetails
the SLs. of InAs/InAsSb
of InAs/InAsSb
Then, 300 periods SL are reported
SL are reported
34.3 ML in in the paper
the paper
InAs/9 ML InAsSb by Michalczewski
by Michalczewski et al. [26].
et al. [26].
SLs were deposited.
After
Growth the growth,
After thedetails
growth, photolithography-assisted
photolithography-assisted
of InAs/InAsSb SL are reported wet-etching
wet-etching
in the paper was
wasbyusedused to define
to define the
Michalczewski the active
etactive
al. [25].and
and contact
contact
After the
areas of
areas
growth, ofphotolithography-assisted
the IR
the IR photoconductors.
photoconductors. The The vacuum evaporation
vacuum
wet-etching evaporation
was used to define of Au/Ti
of Au/Ti thewas was applied
applied
active to fabricate
to
and contact fabricate ohmic
areas ohmic
of the
contacts.
contacts.
IR photoconductors. The vacuum evaporation of Au/Ti was applied to fabricate ohmic contacts.
Inorder
In
In orderto
order toobtain
to obtainaaaproper
obtain properagreement
proper agreementbetween
agreement betweentheoretical
between theoreticalcalculations
theoretical calculationsand
calculations andexperimental
and experimental data,
experimental data,
the temperature-dependent
the
the temperature-dependent bowing
temperature-dependent bowing parameter
bowing parameter for
parameter forEEE
for gg was
was
g was used.
used.
used. In
In our
our simulation
simulation
simulation the
the
the bowing
bowing
bowing
parameterdecreases
parameter
parameter decreasesversus
decreases versusTTTassuming
versus assuming0.67
assuming 0.67meV
0.67 meVat
meV at300
at 300K.
300 K.Figure
K. Figure999shows
Figure showsthe
shows thetheoretical
the theoreticalsimulation
theoretical simulation
simulation
andexperimental
and
and experimentaldata
experimental dataof
data ofαααfor
of for1.7
for 1.7µm
1.7 μmthick
μm thickT2SLs
thick T2SLsInAs/InAs
T2SLs InAs/InAs
InAs/InAs Sb0.38
Sb
Sb
0.62
0.62
0.62
with LL
0.38 with
0.38 with L ==
= 13.2
13.2
13.2 nmnm SL
nm SL at
SL at 300
at 300 K. K.
We
Wehave
We have reached
havereached
reached proper
proper
proper agreement
agreement
agreement between
between
between the experimental
the experimental
the experimental data and data
data and theoretical
and theoretical
theoretical simulation. simulation.
simulation.
Figure 9
Figurethe
Figure
shows 99 shows
shows
transition theetransition
the transition
1 -hh1 being ee11-hh
-hh11 being
equal being equal
to Eg equal
and tosecond
to
the EEgg and
andone thecorresponds
the second one
second onetocorresponds
corresponds to ee11-lh
to
e1 -lh1 transition. -lh11
transition.
transition.

Figure
Figure 9.αααtheoretical
Figure9.9. theoreticalsimulation
theoretical and
simulation
simulation experimental
and
and datadata
experimental
experimental for T2SLs
data InAs/InAs
for T2SLs
for T2SLs 0.62 Sb0.62
InAs/InAs
InAs/InAs 0.38
0.62 Sbwith
Sb L = 13.2
with
0.38 with
0.38
nm
LL == 13.2
13.2
at
nmT =
at300
T = K.
300
nm at T = 300 K. K.

T2SLs photoconductor
T2SLs photoconductor spectral
spectral current
current responsivity
responsivity (R
(Ri)i) operating
operating in
in LWIR
LWIR range
range at
at bias
bias 0.5
0.5 V
V
and T = 230 K was measured and results are presented in Figure 10 where green
and T = 230 K was measured and results are presented in Figure 10 where green line depictsline depicts
 A 13.20 2.8 10.4 0.38 0.1048 24
B 13.55 4.2 9.35 0.38 0.0996 1.2
Figure 10 shows a comparison of Ri theoretical simulation and experimental results for the two
samples. Their common feature is the same composition (xSb = 0.38) while the difference is the
thickness of the SLs (the ratio of the thicknesses InAs and InAsSb) and Eg. Figure 10a corresponds to
Sensors 2019, 19, 1907 8 of 10
sample-A where thickness is located in the strain-balanced region while Figure 10b depicts sample-B
exhibiting unbalanced strain structure. The fitting to experimental results was performed by τ. Table
3 indicates that τ for sample-B
T2SLs photoconductor is much
spectral lower
current than for sample-A
responsivity explaining
(Ri ) operating the difference
in LWIR in R0.5
range at bias i. We
V
and T = 230
believe thatKthewasstructure
measuredbyand
which the responsivity
results are presentedisinpresented
Figure 10 in Figure
where green10aline
is optimally balanced.
depicts theoretical
Thus,while
fitting the optimal
pink starsstructure
correspond of toT2SLs InAs/InAsSb
the experimental for for
results LWIRtwo photodetectors
samples, A and B. should
The SLhave
period,an
strain-balanced
the thickness InAs absorber
and InAswith
1−x the
Sb x , following
xSb , E g and parameters:
the fitting τ SL
are period of
presented 12
in nm
Table <3.L < 15 nm and Sb
molar composition in InAs1-xSbx of 0.37 < x < 0.45.

(a)

(b)
Figure 10. Ri theoretical simulation and experimental results for T2SLs InAs/InAs0.62Sb0.38
Figure 10. Ri theoretical simulation and experimental results for T2SLs InAs/InAs0.62 Sb0.38
photoconductor for (a) sample-A; (b) sample-B at T = 230 K.
photoconductor for (a) sample-A; (b) sample-B at T = 230 K.

4. Conclusions Table 3. The sample-A and sample-B parameters.

The T2SLs InAs/InAs

Sample 1-xSbx L
L [nm] SLs on [nm]
InAsSb a GaSb buffer and GaAs
LInAs [nm] xSbsubstrate were investigated.
Eg [eV] τ [ns] The use
of InAs/InAs1-xASb x SLs gives a great opportunity to fabricate devices for IR radiation detection in a
13.20 2.8 10.4 0.38 0.1048 24
wide wave rangeB by selecting
13.55 the SL4.2period and the
9.35Sb molar composition
0.38 0.0996 of the InAs
1.2 1-xSbx barrier.
In the calculations, the thickness of the InAsSb barrier for the given period was assumed to ensure a
strain balanced SLs. The paper shows that the reduction in period thickness and increase in Sb molar
In the case of theoretical calculations the Ri was estimated by α and τ fitting. Theoretical
composition in the InAsSb barrier allows higher absorption to be reached for the same absorption
calculations exhibit proper coincidence with experimental data.
Figure 10 shows a comparison of Ri theoretical simulation and experimental results for the two
samples. Their common feature is the same composition (xSb = 0.38) while the difference is the thickness
of the SLs (the ratio of the thicknesses InAs and InAsSb) and Eg . Figure 10a corresponds to sample-A
where thickness is located in the strain-balanced region while Figure 10b depicts sample-B exhibiting
unbalanced strain structure. The fitting to experimental results was performed by τ. Table 3 indicates
that τ for sample-B is much lower than for sample-A explaining the difference in Ri . We believe that the
structure by which the responsivity is presented in Figure 10a is optimally balanced. Thus, the optimal
structure of T2SLs InAs/InAsSb for LWIR photodetectors should have an strain-balanced absorber with
the following parameters: SL period of 12 nm < L < 15 nm and Sb molar composition in InAs1−x Sbx of
0.37 < x < 0.45.
Sensors 2019, 19, 1907 9 of 10

4. Conclusions
The T2SLs InAs/InAs1−x Sbx SLs on a GaSb buffer and GaAs substrate were investigated. The use
of InAs/InAs1−x Sbx SLs gives a great opportunity to fabricate devices for IR radiation detection in a
wide wave range by selecting the SL period and the Sb molar composition of the InAs1−x Sbx barrier.
In the calculations, the thickness of the InAsSb barrier for the given period was assumed to ensure a
strain balanced SLs. The paper shows that the reduction in period thickness and increase in Sb molar
composition in the InAsSb barrier allows higher absorption to be reached for the same absorption
edge. An absorption improvement is caused by the increase of the electrons and holes wave function
overlap due to the thinner and lower InAsSb barrier. With the change in the thickness of the SL period,
the position of the light and heavy hole bands changes significantly. With a period smaller than 15 nm,
the light holes band is located directly under the heavy holes band, while for periods larger than 30 nm
it is separated from the conduction band by three heavy holes bands. Numerical simulations show
that the position of the light holes sub-band directly below the first heavy holes sub-band increases
the probability of optical transitions, hence structures with a smaller period are more optimal for the
construction of LWIR detectors based on InAs/InAsSb SLs.
The experimental data were compared with the results of numerical simulations, showing proper
agreement by lifetime fitting. The estimated carrier lifetime for a balanced structure is more than
an order of magnitude higher than for a non-balanced one indicating that the generation of a large
number of defects in the unbalanced structure increases the recombination rate of carriers reducing the
carrier lifetime and current responsivity.

Author Contributions: Conceptualization, T.M.; Methodology, T.M.; Formal Analysis, J.R.; Investigation,
K.M. (Krystian Michalczewski) and K.M. (Krzysztof Murawski); Writing-Original Draft Preparation, T.M.;
Writing-Review & Editing, P.M. and J.R. and T.M.; Project Administration, P.M.
Funding: This research was funded by grant number TECHMATSTRATEG1/347751/5/NCBR/2017.
Conflicts of Interest: The authors declare no conflict of interest.

References
1. Smith, L.D.; Mailhiot, C. Proposal for strained type II superlattice infrared detectors. J. Appl. Phys. 1987, 62,
2545–2548. [CrossRef]
2. Rogalski, A.; Martyniuk, P.; Kopytko, M. InAs/GaSb type-II superlattice infrared detectors: Future prospect.
Appl. Phys. Rev. 2017, 4, 031304. [CrossRef]
3. Steenbergen, E.H.; Connelly, B.C.; Metcalfe, G.D.; Shen, H.; Wraback, M.; Lubyshev, D.; Qiu, Y.; Fastenau, J.M.;
Liu, A.W.K.; Elhamri, S.; et al. Significantly improved minority carrier lifetime observed in a long-wavelength
infrared III-V type-II superlattice comprised of InAs/InAsSb. Appl. Phys. Lett. 2011, 99, 251110. [CrossRef]
4. Rogalski, A.; Kopytko, M.; Martyniuk, P. Antimonide-Based Infrared Detectors: A New Perspective; SPIE Press:
Bellingham, WA, USA, 2018.
5. Webster, P.T.; Riordan, N.A.; Liu, S.; Steenbergen, E.H.; Synowicki, R.A.; Zhang, Y.-H.; Johnson, S.R.
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic
ellipsometry and photoluminescence spectroscopy. J. Appl. Phys. 2015, 118, 245706. [CrossRef]
6. Svensson, S.P.; Sarney, W.L.; Hier, H.; Lin, Y.; Wang, D.; Donetsky, D.; Shterengas, L.; Kipshidze, G.; Belenky, G.
Band gap of InAs1−x Sbx with native lattice constant. Phys. Rev. B 2012, 86, 245205. [CrossRef]
7. Kim, H.S.; Cellek, O.O.; Lin, Z.-Y.; He, Z.-Y.; Zhao, X.-H.; Liu, S.; Li, H.; Zhang, Y.-H. Long-wave infrared nBn
photodetectors based on InAs/InAsSb type-II superlattices. Appl. Phys. Lett. 2012, 101, 161114. [CrossRef]
8. Haddadi, A.; Chen, G.; Chevallier, R.; Hoang, A.M.; Razeghi, M. InAs/InAs1−x Sbx type-II superlattices for
high performance long wavelength infrared detection. Appl. Phys. Lett. 2014, 105, 121104. [CrossRef]
9. Lotfi, H.; Li, L.; Ye, H.; Hinkey, R.T.; Lei, L.; Yang, R.Q.; Keay, J.C.; Mishima, T.D.; Santos, M.B.; Johnson, M.B.
Interband cascade infrared photodetectors with long and very-long cutoff wavelengths. Infrared Phys. Technol.
2015, 70, 162–167. [CrossRef]
Sensors 2019, 19, 1907 10 of 10

10. Lei, L.; Lia, L.; Yea, H.; Lotfia, H.; Yang, R.Q.; Johnsonc, M.B.; Massengalea, J.A.; Mishimab, T.D.;
Santosb, M.B. Long-wavelength interband cascade infrared photodetectors towards high temperature
operation. In Proceedings of the SPIE OPTO, the Optoelectronics and Photonic Materials and Devices
Conference, San Francisco, CA, USA, 28 January–2 February 2017; p. 1011113.
11. Haddadi, A.; Dehzangi, A.; Chevallier, R.; Adhikary, R.; Razeghi, M. Bias-selectable nBn dual-band long-/very
long-wavelength infrared photodetectors based on InAs/InAs1−x Sbx /AlAs1−x Sbx type-II superlattices.
Sci. Rep. 2017, 7, 3379. [CrossRef] [PubMed]
12. Wojtas, J.; Gluszek, A.; Hudzikowski, A.; Tittel, K.F. Mid-infrared trace gas sensors technology based on
intracavity quartz-enhanced photoacustic spectroscopy. Sensors 2017, 17, 513. [CrossRef] [PubMed]
13. Bielecki, Z.; Stacewicz, T.; Wojtas, J.; Mikołajczyk, J.; Szabra, D.; Prokopiuk, A. Selected optoelectronic sensors
in medical applications. Opto-Electron. Rev. 2018, 26, 122–133. [CrossRef]
14. Lestrade, M.; Li, Z.Q.; Li, Z.S. Finite difference k.p modeling of type II MQWs. Opt. Quantum Electron. 2014,
46, 1345–1352. [CrossRef]
15. Birner, S. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces. Available
online: https://inis.iaea.org/search/search.aspx?orig_q=RN:43026032 (accessed on 21 April 2019).
16. Vurgaftman, I.; Meyer, J.R.; Ram-Mohan, L.R. Band parameters for III–V compound semiconductors and
their alloys. J. Appl. Phys. 2001, 89, 5815–5875. [CrossRef]
17. Wei, S.-H.; Zunger, A. Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends
and the role of cation d orbitals. Appl. Phys. Lett. 1998, 72, 2011–2013. [CrossRef]
18. Yu, P.Y.; Cardona, M. Fundamentals of Semiconductors: Physics and Materials Properties, 4th ed.; Springer: Berlin,
Germany, 2010.
19. Steenbergen, E.H. Strain-balanced InAs-InAsSb Type-II Superlattices on GaSb Substrates for Infrared
Photodetector Applications. Ph.D. Thesis, Arizona state university, Tempe, AZ, USA, May 2012.
20. Harrison, J.W.; Hauser, J.R. Alloy scattering in ternary III-V compounds. Phys. Rev. B 1976, 13, 5347–5350.
[CrossRef]
21. Manyk, T.; Michalczewski, K.; Murawski, K.; Grodecki, K.; Rutkowski, J.; Martyniuk, P. Electronic band
structure of InAs/InAsSb type-II superlattice for HOT LWIR detectors. Results Phys. 2018, 11, 1119–1123.
[CrossRef]
22. Lackner, D.; Steger, M.; Thewalt, M.L.W.; Pitts, O.J.; Cherng, Y.T.; Watkins, S.P.; Plis, E.; Krishna, S. InAs/InAsSb
strain balanced superlattices for optical detectors: Material properties and energy band simulations. J. Appl.
Phys. 2012, 111, 034507. [CrossRef]
23. Chuang, S.L. Physics of Optoelectronics Devises; Wiley-Interscience publication: Hoboken, NJ, USA, 1995;
p. 716.
24. Dong, H.M.; Li, L.L.; Xu, W.; Han, K. Effect of microscopic interface asymmetry on optical properties of
short-period InAs/GaSb type-II superlattices. Thin Solid Film. 2015, 589, 388–395. [CrossRef]
25. Michalczewski, K.; Kubiszyn, .; Martyniuk, P.; Wu, C.H.; Jureńczyk, J.; Grodecki, K.; Benyahia, D.; Rogalski, A.;
Piotrowski, J. Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate.
Infrared Phys. Technol. 2018, 95, 222–226. [CrossRef]

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