ECE606: Solid State Devices

Lecture 18

Bipolar Transistors
a) Introduction
b) Design (I)
Gerhard Klimeck
gekco@purdue.edu

1
Klimeck – ECE606 Fall 2012 – notes adopted from Alam

Background

E B C

E C

Base!

Point contact Germanium transistor

Ralph Bray from Purdue missed the invention of transistors.
http://www.electronicsweekly.com/blogs/david-manners-semiconductor-blog/2009/02/how-purdue-university-nearly-i.html
http://www.physics.purdue.edu/about_us/history/semi_conductor_research.shtml

Transistor research was also in advanced stages in Europe (radar).

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 2
 Shockley’s Bipolar Transistors …

n+ emitter

n+
Double p base
n-collector
Diffused BJT n+

n+ p n n+
emitter base collector

Klimeck – ECE606 Fall 2012 – notes adopted from Alam

Modern Bipolar Junction Transistors (BJTs)

Base Emitter Collector

N+
N-
P+ N+
N
SiGe intrinsic base Dielectric trench
P-

Why do we need all

these design?

Transistor speed increases

as the electron's travel
distance is reduced
SiGe Layer

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 4

 Symbols and Convention

E Symbols
Poly emitter NPN PNP
N+
Collector Collector
B P Low-doped base
Base Base
N
Collector doping
optimization
Emitter Emitter
C

IC+IB+IE=0 (DC)
VEB+VBC+VCE=0
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 5

Outline

1) Equilibrium and forward band-diagram

2) Currents in bipolar junction transistors
3) Eber’s Moll model
4) Intermediate Summary
5) Current gain in BJTs
6) Considerations for base doping
7) Considerations for collector doping
8) Conclusions

REF: SDF, Chapter 10

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 6
 Topic Map

Equilibrium DC Small Large Circuit

signal Signal s
Diode

Schottky

BJT/HBT

MOS

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 7

Band Diagram at Equilibrium

∇ • D = q ( p − n + N D+ − N A− ) Equilibrium
∂n 1
= ∇ • J N − rN + g N
∂t q

J N = qnµ N E + qDN ∇n DC dn/dt=0

Small signal dn/dt ~ jωtn
∂p 1 Transient --- Charge control model
= − ∇ • J P − rP + g P
∂t q
J P = qp µ P E − qDP ∇p

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 8

 Band Diagram at Equilibrium

NPN homojunction BJT

Emitter Base Collector

Vacuum χ2
level
χ1 χ3
EC
EF

EV

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 9

Electrostatics in Equilibrium

2 k sε 0 NE 2 k sε 0 NC
x p , BE = Vbi x p , BC = Vbi
q NB ( NE + NB ) q N B ( NC + N B )

2ksε 0 NB
xn , E = Vbi 2k s ε 0 NB
q NE ( NB + NE ) xn , C = Vbi
q NC ( NC + N B )

Emitter Base Collector

Two back to back p-n junction

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 10
 Outline

1) Equilibrium and forward band-diagram

2) Currents in bipolar junction transistors
3) Eber’s Moll model
4) Intermediate Summary
5) Current gain in BJTs
6) Considerations for base doping
7) Considerations for collector doping
8) Conclusions

REF: SDF, Chapter 10

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 11

Topic Map

Equilibriu DC Small Large Circuit

m signal Signal s
Diode

Schottk
y
BJT/HB
T
MOS

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 12

 Band Diagram with Bias

∇ • D = q ( p − n + N D+ − N A− ) Non-equilibrium
∂n 1
= ∇ • J N − rN + g N
∂t q

J N = qnµ N E + qDN ∇n DC dn/dt=0

Small signal dn/dt ~ jωtn
∂p 1 Transient --- Charge control model
= ∇ • J P − rP + g P
∂t q
J P = qp µ P E − qDP ∇p

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 13

Electrostatics in Equilibrium

2k sε 0 NE 2 k sε 0 NC
x p , BE = (Vbi − VEB ) x p , BC = (Vbi − VCB )
q NB ( NE + NB ) q N B ( NC + N B )

2 k sε 0 NB 2k s ε 0
xn , E = (Vbi − VEB ) xn , C =
NB
(Vbi − VCB )
q NE ( NB + NE ) q NC ( NC + N B )

Emitter Base Collector

VEB
VCB
Assume
current flow
is small…
fermi level is
flat
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 14
 Current flow with Bias

Input small amount of

holes results in large
amount of electron output

EC-Fn,E
V
Fp,B-EV
EC-Fn,C

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 15

Modern MOSFET - “Fundamental” Limit

looks similar to BJT

Vg log Id
S D
Metal
Oxide Threshold
n+ p n+

Vg↑
S≥60 mV/dec

0 Vdd Vg

Klimeck – ECE606 Fall 2012 – notes adopted from Alam

 Modern MOSFET - “Fundamental” Limit
looks similar to BJT

Vg log Id
S D
Metal
Oxide Threshold
n+ p n+

DOS(E), log f(E)

Vg↑
S≥60 mV/dec
`
Ef
0 Vdd Vg

Klimeck – ECE606 Fall 2012 – notes adopted from Alam

Coordinates and Convention

Emitter Base Collector

N+ P N
X’’ X X’
0 W

N E = N D ,E , ....N B = N A ,B , ....N C = N D ,C Doping

D E = D P , ........D B = D N , ......D C = D P
Minority carrier
diffusion
nE0 = n p0 , . . . . . . . p B 0 = p n 0 , . . . . . .n C 0 = n p0 Majority carriers

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 18

 Carrier Distribution in Base
 x   x 
∆n( x ) = Ax + B = C 1 −  + D 
C  W B   WB  D
ni2,B   ni2,B qVBC β  x 
∆n( x ) =
NB
( eqVBE β − 1) 1 − Wx +
N
(e )
−1  
 B  B  WB 

ni2,B
∆n(0+ ) =
NB
(e qVBE β
− 1) ∆n( x = WB ) =
ni2, B
(e qVBC β
−1 )
NB

Assume no recombination.
Start from minority carrier

VEB
VCB

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 19

Collector and Emitter Electron Current

ni2, B  x  ni , B qVBC β
2
 x 
∆n ( x ) =
NB
(e qVBE β
− 1)  1 − + e ( −1   )
 WB  N B  WB 
2 2

J n , C = qDn
dn
dx WB
= − n i , B ( e qVBE β − 1) + n i , B e qVBC β − 1
qD n
WB N B
qD n
WB N B
( )

VBE
VBE
dp
J p , E = − qD p
dx
D p ni2 qVBE β
=−
Wn N D
( e − 1)
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 20
 Current-Voltage Characteristics
2 2

Normal, Active Region J n,C = −

WB N B
(
qDn ni , B qVBE β
e
qD n
WB N B
(
− 1) + n i , B eqVBC β − 1)
EB: Forward biased
BC: Reverse biased
JC log10 JC High-level injection
series resistance, etc.

IB

> 60 mV/dec.
VBE
VCE
WB is not independent of bias
same physics of diode , rollover
=> Early Effect
21
Klimeck – ECE606 Fall 2012 – notes adopted from Alam

Outline

1) Equilibrium and forward band-diagram

2) Currents in bipolar junction transistors
3) Eber’s Moll model
4) Intermediate Summary
5) Current gain in BJTs
6) Considerations for base doping
7) Considerations for collector doping
8) Conclusions

REF: SDF, Chapter 10

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 22
 Ebers Moll Model
Hole diffusion in collector

2
 qD n2 qD n2 
IC = − A (
qDn ni , B qVBE β
WB N B
e − 1) + A  n i , B + p i , C  eqVBC β − 1
( )
 WB N B WC NC 
( ) (
≡ α F I F 0 eqVBE β − 1 − I R 0 eqVBC β − 1 ) IC=Ic,n+Ic,p

IF IR
E C IE=IE,n+IE,p

IC
I
αRI α FI I F = I F 0 ( eqVBE β − 1)
E
R B IB F
(
I R = I R 0 e qVBC β − 1 )
 qD n 2 qD n 
2 2

(
I E = − A  p i , E + n i , B  ( e qVBE β − 1) + A n i , B e qVBC β − 1
qD n
) Temperature
 WE N E WB N B  WE N B
dependent
( ) (
≡ I F 0 e qVBE β − 1 − α R I R 0 eqVBC β − 1 )
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 23

Common Base Configuration

IF IR

E C E C
IE N P NI VCB αRIR α FI F
VEB C
(out) IE IC
(in)
B B B
CBE CBC
IB
Junction capacitance
and diffusion capacitance
How would the model change if this was a Schottky barrier BJT?
The original transistor was a metal/ semicond / metal device
No minority carriers, no diffusion capacitance but the “rest” about the same.
Common base configuration provides power gain, but no current gain.
=> Emitter and collector current are identical => no current gain
=> Collector current IC can be driven through large resistor => power gain
Is there another configuration that can deliver current gain?
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 24
 Common Emitter Configuration

E
Cµ
IE
C

CBE IF
P IC αRIR IR
B IB
VEC
N
(out) B Cπ α F IF − αRIR
VEB P+ IB αF IF
(in)
βF
E E CBC IR
αFIF
αF IF αF IF
IC = = (1 − α F ) I F = I B
βF αF
1 − αF

This is a practice problem …

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 25

Intermediate Summary

• The physics of BJT is most easily understood with

reference to the physics of junction diodes.
• The equations can be encapsulated in simple
equivalent circuit appropriate for dc, ac, and large
signal applications.
• Design of transistors is far more complicated than this
simple model suggests => the next lecture elements
• For a terrific and interesting history of invention of the
bipolar transistor, read the book “Crystal Fire”.

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 26

 Outline

1) Equilibrium and forward band-diagram

2) Currents in bipolar junction transistors
3) Eber’s Moll model
4) Intermediate Summary
5) Current gain in BJTs
6) Considerations for base doping
7) Considerations for collector doping
8) Conclusions

REF: SDF, Chapter 10

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 27

Ebers Moll Model

2
qD p ni2, C
(e − 1) + A (e )
qD p n qVBE β qVBC β
IB = A i, E
−1
WE N E WC N C
 qD n 2 qD p ni2, E  qVBE β 2

 ( e − 1) + AE n i , B e qVBC β − 1 ( )
qD n
I E = − AE  n i , B +
 WB N B WE N E  WB N B

(
= I F 0 ( e qVBE β − 1) − α R I R 0 e qVBC β − 1 )
IF IR

E C
IE IC
αRIR α FI F
B IB
2
 qD n 2 qD n 
2

I F = I F 0 ( e qVBE β − 1) ( − 1) + AC  n i , B + n i , C  eqVBC β − 1 ( )
qDn ni , B qVBE β
I C = − AC e
WB N B  WB N B WC N C 
(
I R = I R 0 e qVBC β − 1 ) (
= α F I F 0 ( e qVBE β − 1) − I R 0 eqVBC β − 1 )
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 28
 Ebers Moll Model (Basic definition)

IC IB
saturation active region
region

VCE
0

The Ebers-Moll model describes both the active and the saturation
regions of BJT operation.

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 29

Gummel Plot and Output Characteristics

• The simultaneous plot of collector and base current vs.

the base-emitter voltage on a semi-logarithmic scale is
known as a Gummel Plot.

• This plot is extremely useful in device characterization

because it reflects on the quality of the emitter-base
junction while the base-collector bias is kept at a
constant.

• A number of other device parameters can be ascertained

either quantitatively or qualitatively directly from the
Gummel plot because of its semi-logarithmic nature
− For example the d.c gain β, base and collector ideality
factors, series resistances and leakage currents.

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 30

 Gummel Plot and Output Characteristics

2 2
IC qDn ni , B qVBE / kT qDn ni , B qVBC / kT
≃− (e − 1) + (e − 1)
A WB N B WB N B

2
I B qD p ni , E qVBE / kT
= (e − 1)
A WE N E

IC
β DC =
IB

β DC Common emitter
Current Gain

VBE
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 31

Current Gain
C

Common Emitter current gain .. P+ IC

B IB
IC
β DC =
N

VEB
IB (in)
P

2 2
qDn ni , B qVBE / kT qDn ni , B ( qVBC / kT )
(e − 1) + (e − 1) E
2
E
WB N B WB N B Dn WE ni , B N E
= 2
≈
qDn ni , E qVBE / kT WB D p ni2, E N B
(e − 1)
WE N E Will examine
C
Common Base current gain .. E
P+ N P

α DC =
IC IC IC α DC IE IC VCB
β DC = = = VEB
(out)
I B I E − I C 1 − α DC
(in)
IE
DC transfer gain B B
Properties are related – (transistor did not change ☺)
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 32
 Current Gain

2
Dn WE ni , B N E
β DC ≈
WB D p ni2, E N B

collector current

does not roll off

High injection

Base current
=>roll-off
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 33

How to make a Good Silicon Transistor

For a given Emitter length ~1, same material

primarily determined
by bandgap
2
Dn WE ni , B N E
β DC ≈
WB D p ni2, E N B

Make-Base short …
(few mm in 1950s, 200 A now) Emitter doping higher
Want high gradient of carrier density than Base doping

Base doping hard to control

Emitter doping easier
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 34
 Doping for Gain …

2
Dn WE ni , B N E
β DC ≈
WB D p ni2, E N B
N+
NE
P
NB
N
NC

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 35

Outline

1) Equilibrium and forward band-diagram

2) Currents in bipolar junction transistors
3) Eber’s Moll model
4) Intermediate Summary
5) Current gain in BJTs
6) Considerations for base doping
what’s wrong with the previous recipe?
7) Considerations for collector doping
8) Conclusions

REF: SDF, Chapter 10

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 36
 Problem of Low Base Doping:
Current Crowding
VBE
Double diffused
junction
configuration:
n+ p base Emitter doping must
compensate /
overcome the base
n-collector doping
VBE n+ Low doping in base
=> resistance along
the current path
=> potential drop
2 => Determines the

I C ∫ J C ( x)dx ∫ WB N B
(e
qDn ni , B qV 'BE ( x ) β
− 1) dx injection
=> Spatially
β= = = dependent
I B ∫ J B ( x)dx qD p ni2, E qV 'BE ( x ) β
∫ WE N E ( e − 1) dx => More current in
the corners
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 37

Low Base Doping: Non-uniform Turn-on

Sketches from text book

n+ p base

n-collector
n+

Non-uniform current inefficient

High current at the edge can cause burn-out
E

B
Interdigitated designs for almost all high power
transistors (E-B distance minimized)
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 38
 Low Base Doping: Current Crowding

n+ p base

n-collector
VBE n+

We talked about how low doping for the base enhances the current gain.
But there is a potential downside to this approach

If the base doping is kept to small values, it will have a high

resistance: Lesser ability to conduct means higher resistance

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 39

Low Base Doping: Current Crowding

n+ p base

n-collector
VBE n+

Non-zero base resistance results in a lateral potential difference under

the emitter region
For an n-p-n transistor as shown, the potential decreases from edge of
the emitter towards the centre (the emitter is highly doped and can be
considered an equipotential region)

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 40

 Low Base Doping: Current Crowding

n+ p base

n-collector
VBE n+

The number of electrons injected from emitter to base is exponentially

dependent on base-emitter voltage
With the lateral drop in the voltage in the base between the edge and
centre of emitter, more carriers will be injected at the edge than the
emitter centre.

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 41

Low Base Doping: Current Crowding

Key facts:
1. Current crowding is due to 2D nature of BJTs
2. It is a function of the doping concentration
3. As doping concentration increases, resistivity decreases
− Consequence: Current gain goes smaller  Emitter current
injection efficiency decreases

The larger current density near the emitter may cause localized heating
and high injection effects

Possible Solution: Emitter widths are fabricated with an inter-digitated

design  Many narrow emitters connected in parallel to achieve the
required emitter area

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 42

 Low Base Doping: Non-uniform Turn-on

Sketches from text book

n+ p base

n-collector
n+

Non-uniform current inefficient

High current at the edge can cause burn-out
E

B
Interdigitated designs for almost all high power
transistors (E-B distance minimized)
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 43

Problem of Low Base Doping: Punch-through

NE

NB

NC

N+ N

2 k sε 0 2k s ε 0 NC
x p , BE =
NE
(Vbi − VBE ) x p , BC = (Vbi − VBC )
q NB ( NE + NB ) q N B ( NC + N B )

Low base doping is not a good idea!

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 44
 Problem of low Base-doping:
Base Width Modulation
Electrical base region is smaller than the
metallurgical region!
Dn WE n 2 i , B N E
β DC ≈
WB − x p , B − x p , c Dp n 2 i , E N B
NE

NB

2 k sε 0 NE
NC x p , BE = (Vbi − VBE )
q NB ( NE + NB )

2k s ε 0 NC
x p , BC = (Vbi − VBC )
q N B ( NC + N B )
N+

N
P

Gain depends on collector voltage (bad) …

Depletion region width modulation
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 45

Problem of Low Base-doping: Early Voltage

Dn WE n 2 i , B N E
β DC ≈
WB − xp .B − xp .C D p n 2 i , E N B

qDn n 2 i , B ( qVBE / kT ) qDn n 2 i , B ( qVBC / kT )

I n,C = − (e − 1) + (e − 1)
WB ' N B WB ' N B

dI C IC I IC In practice
= ≈ C
dVBC VBC + VA VA
Ideally
VBC about 1V
VA ideally infinity
VBC
Jim Early
device pioneer VA
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 46
 The Early Voltage PS1

IC In practice

Ideally

VBC
VA
• The collector current depends on VCE:
• For a fixed value of VBE, as VCE increases, the reverse bias on the
collector-base junction increases, hence the width of the depletion
region increases.
− The quasi-neutral base width decreases  collector current
increases.
Due to the Early effect, collector current increases with increasing
VCE, for a fixed value of VBE.
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 47

The Early Voltage PS2

IC In practice

Ideally

VBC
VA
• The Early voltage is obtained by drawing a line tangential to the
transistor I-V characteristic at the point of interest.
• The Early voltage equals the horizontal distance between the point
chosen on the I-V characteristics and the intersection between the
tangential line and the horizontal axis.
• Early voltage is indicated on the figure by the horizontal dotted line

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 48

 Punch-through and Early Voltage

dI C IC I
= ≈ C
dVBC VBC + VA VA

CCB I C I
dI C dI C d ( qN BWB ) − ≈ C
= qN B WB VA
dVBC d ( qN BWB ) dVBC
qN BWB
=
1  dI C   dQB  ⇒ VA = − →∞
   CCB
qN B  dWB   dVBC 
1  IC 
=−   CCB
qN B  WB  Need higher NB and WB or …

2 2
d  ξ  ζ
(
qDn ni , B qVBE β
(
− 1) + n i , B e qVBC β − 1
qD n
)
dI C
IC = e =  =− 2
WB N B WB N B dWB dWB  WB  WB
ξ
= I
=− C
WB WB
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 49

Outline

1) Equilibrium and forward band-diagram

2) Currents in bipolar junction transistors
3) Eber’s Moll model
4) Intermediate Summary
5) Current gain in BJTs
6) Considerations for base doping
7) Considerations for collector doping
8) Conclusions

REF: SDF, Chapter 10

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 50
 Collector Doping

2
Dn WE ni , B N E
β≈
WB − x p , B − x p ,C D p ni2, E N B
NE
qN BWB κ sε 0
NB VA = − CCB =
CCB xn ,C + x p , B
NC Base-Collector in reverse bias
⇒Majority carriers only
⇒No diffusion capacitance
⇒Reduce capacitance
⇒Increase xnC
N+

N
P

If you want low base doping

then reduce collector doping
even more to increase
Collector depletion…..
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 51

… but (!) Kirk Effect and Base Pushout

Space-Charge Density
Space-Charge Density

p-Base n-Collector p-Base n-Collector

n+ n+
Nc Nc J C = qυ sat n
+
x x Additional charge!
- Can be large
NB NB
compared to low
WB WC WB WC doping
N B xB = N C xC ( N B + n ) xB ' = ( N C − n ) xC '
q
q Vbi − VBC = ( N B + n ) xB2 '+ ( N C − n ) xC2 '
Vbi − VBC =  N B xB2 + N C xC2  2κ sε 0 
2κ sε 0 
n JC
1+ 1+
NB qυ sat N B
xC' = xC = xC
n JC
1− 1−
NC qυsat N C
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 52
 Kirk Effect and Base Pushout

n+ p n
n+
emitter base collector
Space-Charge Density

Space-Charge

Space-Charge
n+ p-Base n-Collector n+ p-Base n-Collector n+
p-Base n-Collector
Nc Nc
x
x x
W CI nc-Nc
NB NB B WS
C
WB WC WB WC WB WC
E

⇒Increase ⇒Junction lost

bias & current ⇒High current dominates
Klimeck – ECE606 Fall 2012 – notes adopted from Alam collector doping 53

Kirk Effect and Base Pushout

JC
1+
qυ sat N B
xC' = xC
JC
1−
qυ sat N C

J C , crit = qυ sat N C ≡ J K

Can not reduce collector doping

arbitrarily without causing base pushout

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 54

 Kirk Effect
The Kirk effect occurs at high current densities in a bipolar transistor. The effect is due
to the charge density associated with the current passing through the base-collector
region. As this charge density exceeds the charge density in the depletion region the
depletion region ceases to exist. Instead, there will be a build-up of majority carriers
from the base in the base-collector depletion region. The dipole formed by the
positively and negatively charged ionized donors and acceptors is pushed into the
collector and replaced by positively charged ionized donors and a negatively charged
electron accumulation layer, which is referred to as base push out. This effect occurs if
the charge density associated with the current is larger than the ionized impurity
density in the base-collector depletion region. Assuming full ionization, this translates
into the following condition on the collector current density.

Key point : Under high current and low collector doping the
depletion approximation is invalid in the C-B junction!

Klimeck – ECE606 Fall 2012 – notes adopted from Alam

Perhaps High Doping in Emitter?

Band-gap narrowing reduces gain significantly …

2 − E / kT
Dn WE ni , B N E
β≈ =
Dn WE N C NV e g ,B NE −∆E / kT N E
≈e g
WB D p ni2, E N B W D N N e − Eg ,E / kT N NB
B p C V B

(Easki-like) Tunneling cause loss of base control …

Klimeck – ECE606 Fall 2012 – notes adopted from Alam 56

 Summary

While basic transistor operation is simple, its

optimum design is not.

In general, good transistor gain requires that the

emitter doping be larger than base doping, which in
turn should be larger than collector doping.

If the base doping is too low, however, the transistor

suffers from current crowding, Early effects. If the
collector doping is too low, then we have Kirk effect
(base push out) with reduced high-frequency
operation and if the emitter doping is too high then
the gain is reduced.
Klimeck – ECE606 Fall 2012 – notes adopted from Alam 57