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4511GM-Advanced Power Electronics
4511GM-Advanced Power Electronics
com
AP4511GM
Pb Free Plating Product
Advanced Power N AND P-CHANNEL ENHANCEMENT
Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 62.5 ℃/W
AP4511GM
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 35 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=7A - 18 25 mΩ
VGS=4.5V, ID=5A - 29 37 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=7A - 9 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=35V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=28V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
2
Qg Total Gate Charge ID=7A - 11 18 nC
Qgs Gate-Source Charge VDS=28V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC
2
td(on) Turn-on Delay Time VDS=18V - 12 - ns
tr Rise Time ID=1A - 7 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns
tf Fall Time RD=18Ω - 6 - ns
Ciss Input Capacitance VGS=0V - 830 1330 pF
Coss Output Capacitance VDS=25V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.7A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=7A, VGS=0V - 18 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC
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AP4511GM
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-6A, VGS=0V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
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AP4511GM
N-Channel
50 50
T A = 25 o C 10V
10V T A = 150 o C 7.0V
40
7.0V 40
5.0V 5.0V
30 30
4.5V
20 20 4.5V
10 V G =3.0V 10 V G =3.0V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
40 1.8
1.4
RDS(ON) (mΩ )
30 1.2
1.0
25
0.8
20 0.6
2 4 6 8 10 -50 0 50 100 150
5
1.3
Normalized VGS(th) (V)
1.1
T j =150 o C T j =25 o C
IS(A)
0.9
0.7
1
0 0.5
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
AP4511GM
N-Channel
f=1.0MHz
14 1000
C iss
I D =7A
VGS , Gate to Source Voltage (V)
12
V DS =28V
10
8 C oss
C (pF)
100
C rss
6
0 10
0 5 10 15 20 25 1 5 9 13 17 21 25 29
100 1
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
10
10us 0.1
0.1
0.05
1ms
ID (A)
1 0.02
10ms
0.01
PDM
t
100ms 0.01
Single Pulse
T
0.1 o
T A =25 C
1s Duty factor = t/T
Single Pulse Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
DC
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
30
V DS =5V
VG
ID , Drain Current (A)
T j =25 o C T j =150 o C QG
20
4.5V
QGS QGD
10
Charge Q
0
0 2 4 6 8
AP4511GM
P-Channel
50 50
-10V -10V
o
T A = 25 C -7.0V T A = 150 o C -7.0V
40 40
-5.0V
-ID , Drain Current (A)
-4.5V
20 20
V G = - 3.0V V G = - 3.0V
10 10
0 0
0 1 2 3 4 5 0 1 2 3 4 5
60 1.4
I D = -4 A I D =-6A
55
T A =25 o C V G =-10V
1.2
RDS(ON) (mΩ )
Normalized R DS(ON)
50
45 1.0
40
0.8
35
30 0.6
3 5 7 9 11 -50 0 50 100 150
5
Normalized -VGS(th) (V)
1.3
1.1
T j =150 o C T j =25 o C
-IS(A)
0.9
0.7
1
0 0.5
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
AP4511GM
P-Channel
f=1.0MHz
14 10000
12
I D = -6 A
-VGS , Gate to Source Voltage (V)
V DS = - 28V
10
C (pF)
8
1000 C iss
6
C oss
2
C rss
0 100
0 5 10 15 20 25 1 5 9 13 17 21 25 29
100 1
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us 0.2
10
0.1
0.1
1ms
0.05
-ID (A)
1
10ms
0.02
0.01
100ms PDM
0.01
t
Single Pulse
0.1 o 1s T
T c =25 C
Duty factor = t/T
Single Pulse Peak Tj = PDM x Rthja + Ta
DC Rthja=135oC/W
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
30
V DS =-5V VG
T j =25 o C T j =150 o C QG
-ID , Drain Current (A)
20
-4.5V
QGS QGD
10
Charge Q
0
0 2 4 6 8