BUZ 380

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• FREDFET

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 380 1000 V 5.5 A 2Ω TO-218 AA C67078-A3205-A2

Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 1000 V
Drain-gate voltage VDGR
RGS = 20 kΩ 1000
Continuous drain current ID A
TC = 30 °C 5.5
Pulsed drain current IDpuls
TC = 25 °C 22
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC ≤ 125
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤1 K/W
Thermal resistance, chip to ambient RthJA
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

 BUZ 380

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 1000 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3.5 4
Zero gate voltage drain current IDSS µA
VDS = 1000 V, VGS = 0 V, Tj = 25 °C - 20 250
VDS = 1000 V, VGS = 0 V, Tj = 125 °C - 100 1000
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 3.5 A - 1.7 2

Semiconductor Group 2 07/96

 BUZ 380

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 3.5 A 1.4 4 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 3900 5000
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 180 300
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 70 120
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 2.5 A
RGS = 50 Ω - 60 90
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 2.5 A
RGS = 50 Ω - 90 140
Turn-off delay time td(off) nF
VDD = 30 V, VGS = 10 V, ID = 2.5 A
RGS = 50 Ω - 330 430
Fall time tf ns
VDD = 30 V, VGS = 10 V, ID = 2.5 A
RGS = 50 Ω - 110 140

Semiconductor Group 3 07/96

 BUZ 380

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 5.5
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 22
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 11 A - 1.25 1.6
Reverse recovery time trr ns
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 150 220
Reverse recovery charge Qrr µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 0.6 0.9

Semiconductor Group 4 07/96

 BUZ 380

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

130 6.0

W A

110 5.0
Ptot ID
100 4.5
90 4.0
80
3.5
70
3.0
60
2.5
50
2.0
40
1.5
30
1.0
20
0.5
10
0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 0°C parameter: D = tp / T

10 2 10 1

K/W
A
t = 25.0µs
p
ID ZthJC
10 0

10 1 100 µs
D

10 -1
/I

D = 0.50
DS

1 ms
=V

0.20
)
(on

10 0 0.10
DS
R

10 ms 0.05
10 -2
0.02
0.01

single pulse
10 -1 DC 10 -3
0 1 2 3 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 07/96

 BUZ 380

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

13 6.5
Ptot = 125W l
A Ω a b c d e
kj i h g
11 VGS [V] 5.5
ID a 4.0 RDS (on)
10 f b 5.0
4.5

9 c 5.0 4.5
d 5.5
8 e e 6.0 4.0
f 6.5
7 3.5
g 7.0
6 d h 7.5 3.0
i 8.0 f
5 2.5
j 9.0 g
h
4 c k 10.0 2.0 j i
l 20.0 k
3 1.5

2 b 1.0
VGS [V] =
a b c d e f g h i j k
1 a 0.5 4.0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0 0.0
0 10 20 30 40 V 55 0 2 4 6 8 A 11
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

6.0 6.0

A S

5.0 5.0
ID gfs
4.5 4.5

4.0 4.0

3.5 3.5

3.0 3.0

2.5 2.5

2.0 2.0

1.5 1.5

1.0 1.0

0.5 0.5
0.0 0.0
0 1 2 3 4 5 6 7 8 V 10 0.0 1.0 2.0 3.0 4.0 A 5.5
VGS ID

Semiconductor Group 6 07/96

 BUZ 380

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 3.5 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

6.5 4.6
Ω V 98%
4.0
5.5
VGS(th) typ
RDS (on) 3.6
5.0

4.5 3.2

4.0 2.8

3.5 2.4 2%
3.0
98% 2.0
2.5 typ
1.6
2.0
1.2
1.5
0.8
1.0
0.4
0.5
0.0 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF Ciss A
C IF

10 0 10 1

Coss
10 -1 10 0
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 07/96

 BUZ 380

Drain-source breakdown voltage Typ. gate charge

V(BR)DSS = ƒ(Tj ) VGS = ƒ(QGate)
parameter: ID puls = 8 A

16
1200
V
V
1160
V(BR)DSS
1140 VGS
12
1120
1100
10
1080 0,2 VDS max 0,8 VDS max
1060 8
1040
1020 6
1000
980 4
960
940 2

920
900 0
-60 -20 20 60 100 °C 160 0 20 40 60 80 100 120 140 nC 180
Tj Q Gate

Semiconductor Group 8 07/96

 BUZ 380

Package Outlines
TO-218 AA
Dimension in mm

Semiconductor Group 9 07/96

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