Module 3c - AC BJT (Compatibility Mode) - 4

Chapter 3 – BJT | Module 3c – AC Analysis of BJT
Learning Outcome
Chapter 3 : At the end of this chapter, students able to:

 Analyze the small signal of single stage BJT amplifier circuits
BIPOLAR JUNCTION TRANSISTORS (BJTs)
 Calculates the transistor parameters such as voltage gain Av,
Module 3c : AC Analysis of BJT current gain Ai, input impedance Zi and output impedance
Zo.
Norsabrina Sihab
Faculty of Electrical Engineering,
Universiti Teknologi MARA
Pulau Pinang
Tel : 04-3823355
Email : norsabrina@ppinang.uitm.edu.my
Norsabrina Sihab ELE232 - Electronics 1 Updated Nov 2013
Chapter 3 – BJT | Module 3c – AC Analysis of BJT Chapter 3 – BJT | Module 3c – AC Analysis of BJT
3 4
Introduction Introduction
Increasing the power of an AC signal is called amplification. In this chapter we learn how to analyze and work with a single
Increase the power level - make it a weak signal become more stage amplifier.
stronger. To examine ac response of BJT Amplifiers by reviewing models
Amplification circuit called amplifier eg. Bipolar transistor frequently used to represent the transistor in ac domain.
Amplifier properties: Amplitude of the input signal will determine whether to use
1. Voltage gain, AV small signal or large signal analysis techniques.
2. Current gain, Ai
3. Input impedance, Zi
4. Output impedance, Zo
Good Amplifier:
1. High Voltage gain, AV
2. High Input impedance, Zi
3. Low Output impedance, Zo
4. High Bandwidth, BW
Norsabrina Sihab ELE232 - Electronics 1 Updated Nov 2013 Norsabrina Sihab ELE232 - Electronics 1 Updated Nov 2013
5 6
Transistor Equivalent Model

1. Hybrid- Model
• A model is an equivalent circuit that represents the AC
characteristics of the transistor. The hybrid  model is most useful for analysis of high
• A model uses circuit elements that approximate the behavior of frequency transistor applications.
the transistor.
At lower frequencies the hybrid  model closely
• There are two models commonly used in small signal AC analysis
approximate the re parameters, and can be replaced by
of a transistor:
them.
1. Hybrid - equivalent model (will be more emphasized)
g m v  ib
2. re-model
IC  I E
VT 26mV
re  
IE IE
VT VT
r  (   1)re  (   1) 
IE IE
7 8
2. re Transistor Model
2. re model
ib
b c
 BJTs are basically current-controlled devices, therefore the re-model +
uses a diode and a current source to duplicate the behavior of the Vbe βre βib rce=ro
transistor. _
 One disadvantage to this model is its sensitivity to the DC level. This e
model is designed for specific circuit conditions. Transistor ac equivalent

circuit for common emitter
The use of re model then becomes more desirable because an
important parameter of the equivalent circuit is determined by the ie
actual operating conditions but one must still turn to the data sheets e
+
c
for some of the other parameters of the equivalent circuit.

Vbe re ie rce=ro
The re model also failed to include the feedback term, which in some
cases can be important. b
_
The re model is really a reduced version of the hybrid- model used Transistor ac equivalent
extensively for high-frequency analysis. circuit for common base
9 10
Small Signal ac Equivalent Circuit Exercise – Draw small signal ac equivalent circuit.
Procedure:-
1. Replace all capacitors with short circuit and set dc source to
zero.
2. Substitute BJT with hybrid-π model.
Figure 1 Figure 3
Figure 2 Figure 4
11 12
1a) Common Emitter - by passed RE Common Emitter - by passed RE
1. Replace all capacitors with short 3. Determine the BJT model b ib rbb’ c
Vcc
circuit and set dc source to zero. parameters : Zi, Zo, Av, and Ai +
+
+
Vi
+ R1//R2 Vb rπ gmvπ rce Rc V o
R1 Rc + Rc Vo
- -
Vi R1 R2 e
Zi Zb Zo
-
Ci + -
Co
Simplified hybrid-π equivalent
+ Simplified AC equivalent circuit circuit of a CE amplifier.
Vo
Vi Amplifier with the hybrid-π
R2 RE 2. Substitute BJT with hybrid-π model.
Ce
- rbb’
equivalent circuit
-
b
ib
c Input impedance
+
By passed RE
Vπ rπ gmvπ rce Zi  R 1 || R 2 || Zb
_ Vb ib (rbb '  r )
e where Zb    rbb '  (   1)re
ib ib
Hybrid-π transistor model
13 14
Common Emitter - by passed RE Exercise 1
Voltage gain: Output impedance:

For the circuit in figure below obtain
Set Vi to zero. the
+ 20V
Vo Vo g V (R || r ) Therefore Vπ=0. gmVπ=0 ac as i. Emitter current, IE and re

Av     m  C ce o/c. ii. Input impedance, Zi, and the 82k 2k7
Vi Ve ib (rbb '  r ) 10F
output impedance, Zo
where gm V   ib and r  (   1) re iii. Voltage gain, Av and the current 10F
  ib (R C || rce ) gain, Ai Tr1

Av 
ib (rbb '  (   1) re ) 33k
Given that the parameters of the
  (R C || rce ) 120R vo
 transistor is as follows. β=100, 18k
rbb '  (   1)re rbb’=10Ω, rce=∞Ω and VBE=0.7V.
vin
Vo State any assumptions made.

Zo   RC || rce 1k5
47F
Io
Current gain without RL:
Zi Zo
Zi
Ai  A v
Zo
15 16
1b) Common Emitter – un-bypassed RE Common Emitter – un-bypassed RE

RL included in
Input impedance Voltage gain voltage gain
Vcc
Z in  R1 // R2 // Z b
Vo Vo  g m v rce // Rc // RL 
Vb ib ( rbb '  r )  ie ( RE1 ) Av   
R1
Rc Zb   Vi Vb ib (rbb '  r )  ie ( RE1 )
ib ib
where gm V  ib and r  (   1)re
ib ( rbb '  r )  ib (   1)( RE1 )
 ib rce // Rc // RL 
Ci Co

Tr1 Circuit with RL
Ac equivalent circuit ib Av 
ib (rbb '  r  (   1) RE1 )
 rbb '  r  (   1) RE1
  rce // Rc // RL 
RL Output impedance 
R2
rbb '  r  (   1) RE1
Set Vi to zero.
Therefore Vπ=0. gmVπ=0 ac as o/c.
Ce
Current gain with RL:

v
zo  o  rce // Rc Zi RL included in
io Ai  A v current gain
Zo //R L
Hybrid-π equivalent circuit of the
Common Emitter Amplifier.
17 18
Exercise 2 Exercise 3
For the circuit below, obtain the For the circuit below obtain the voltage gain, Av, the current gain, Ai, the
+20V
i. Emitter current, IE and re input impedance, Zi, and the output impedance, Zo, given that the
ii. Input impedance, Zi, and the output parameters of the transistor is as follows. β=100, rbb’=75Ω, rce=30kΩ and
2k7
impedance, Zo
82k 10F VBE=0.7V. State any assumptions made.
Answer : re=10.28Ω, Av= -14.136, Zin=8.362kΩ, Zout=2.724kΩ, Ai= -43.346
iii. Voltage gain, Av and the current 10F 20 V
gain, Ai Tr1
82k 3k3
10F
Given that the parameters of the 120R 33k
vo
18k 10F
transistor is as follows. β=100, vin
Tr 1
rbb’=10Ω, rce=∞Ω and VBE=0.7V. 1k5
47F 33k
State any assumptions made. 180R
vo
vin 18k
Answer : IE=1.79mA, re=14.53Ω,
Zi Zo
Zi= 7.08 kΩ, Zo=2.7kΩ, 820R
47F
Av= -18.35 , Ai= -52.04
19 20
2) Common Base Amplifier Common Base Amplifier

rce
Input Impedance Output impedance
e ie c Set Vi to zero.
e c + + ib
gmvπ
+ Zi  RE // Ze Therefore Vπ=0. gmVπ=0 act as o/c.
rπ
Vi i b (r  rbb ' ) (r  rbb ' )
Vi
RE Ve Ze   
b’
Rc Vo
ie i b (   1) (   1)
b _
rbb’
- - Voltage gain
Ac equivalent circuit of a common b Vo Vo g m v rce // Rc 
base amplifier. Zi Ze Zo Av   
Vi Ve ib (rbb '  r )
Hybrid-π equivalent circuit of vo
where gm V  ib and r  (   1)re zo   rce // Rc
the Common Base Amplifier.
ib rce // Rc   rce // Rc 
io
Av   Current gain, Ai
ib (rbb '  r ) (rbb '  r )
if rce   Zi
Ai  A v 1
ib Rc   Rc  Zo
Av  
ib (rbb '  r ) (rbb '  r )
21 22
Exercise 4 3) Common Collector Amplifier

For the circuit below, obtain the Voltage gain, Av, the input impedance, Zi +
and the output impedance, Zo, given that the parameter of the transistor is +
as follows. β=100,rb’b=10Ω,rce=∞ and VBE=0.7V. State any assumptions RE Vo
Vo R1 R2
made. --
Answer : re=10.28Ω, Av=257.14, Zin=10.27Ω, Zout=2.7kΩ, Ai=0.98 --
ac equivalent circuit of a CC
. 10F amplifier.
47F
100F
A common base Amplifier.

Hybrid-π equivalent circuit of a
CC amplifier.
23 24
Common Collector Amplifier

Common Collector Amplifier
b ib rbb’ rπ e ie
Output impedance +
Input Impedance Voltage gain Set Vi to zero.
Vi=0 R1//R2 gmvπ RE Vo
Z i  R1 // R2 // Z b Vo Vo ie RE Z o  RE // Z o ' --
Av    c
where gm V  ib and r  (   1)re Vi Vb ib (rbb '  r )  ie RE V  i (r  r )
Z o '  x  b  bb '
Vi Vb ib (r  rbb ' )  ie RE  ie ib rbb’ rπ ie
Zb    (   1)ib RE ix e

ib ib ib ib (rbb '  r )  (   1)ib RE ib (r  rbb ' ) +

ib ((   1)re  rbb ' )  ( ib  ib ) RE (   1) RE ib (   1) gmvπ RE Vo
 
ib (rbb '  r )  (   1) RE r r
  bb ' --
ib ((   1)re  rbb '  (   1) RE )  1 c

ib Zo’ Zo=RE//Zo’
ib rbb’ rπ e ie
 (   1)re  rbb '  (   1) RE
ix
gmvπ
Current gain VX
z
Ai  Av i c
zo Zo’
25 26
Exercise 5 Exercise 6
For the circuit in figure below obtain 1. Determine Zin, Zo, AV and AVS
the 20 V
β=150,rb’b=10Ω,rce=50kΩ
i. Emitter current, IE and re and VBE=0.7V. State any
ii. Input impedance, Zi, and the 82k 2k7 assumptions made.
output impedance, Zo
iii. Voltage gain, Av and the current Ci
gain, Ai
vin
Given that the parameters of the 18k 1k0 vo
transistor is as follows. β=100,
rbb’=10Ω, rce=∞Ω and VBE=0.7V.
State any assumptions made. Common collector Amplifier
Answer : IE=2.53mA, re=10.28Ω,
circuit.
Zi=12.89kΩ, Zo=10.27Ω, Av= 0.99, Ai= 1.24k
Chapter 3 – BJT | Module 3c – AC Analysis of BJT

27
Exercise 7
2. Determine Zin, Zo, AV, Ai, and AVS. Vo when

Vs=25mV. β=120,rb’b=10Ω,rce=∞Ω and VBE=0.7V.
State any assumptions made.
Answer: IE=7.81mA, re= 3.33Ω, Zin = 412.2Ω , Zo = 1.8kΩ, AV

= -338.27, Ai = -119.79, and AVS =-137.75. Vo = 3.45V
Vcc = +24V
RC
R1 1k8
240k Co Vo
RS
600R Ci
Vi
β=120
VS RL
RE
CE 3k3
1k0
Zi Zo
Norsabrina Sihab ELE232 - Electronics 1 Updated Nov 2013

Module 3c - AC BJT (Compatibility Mode) - 4

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Module 3c - AC BJT (Compatibility Mode) - 4

Uploaded by

Copyright:

Available Formats

Chapter 3 – BJT | Module 3c – AC Analysis of BJT

Chapter 3 : At the end of this chapter, students able to:

Norsabrina Sihab ELE232 - Electronics 1 Updated Nov 2013

Transistor Equivalent Model

 One disadvantage to this model is its sensitivity to the DC level. This e

model is designed for specific circuit conditions. Transistor ac equivalent

for some of the other parameters of the equivalent circuit.

1a) Common Emitter - by passed RE Common Emitter - by passed RE

Common Emitter - by passed RE Exercise 1

Voltage gain: Output impedance:

Vo Vo g V (R || r ) Therefore Vπ=0. gmVπ=0 ac as i. Emitter current, IE and re

  ib (R C || rce ) gain, Ai Tr1

Vo State any assumptions made.

1b) Common Emitter – un-bypassed RE Common Emitter – un-bypassed RE

Input impedance Voltage gain voltage gain

Current gain with RL:

2) Common Base Amplifier Common Base Amplifier

Exercise 4 3) Common Collector Amplifier

A common base Amplifier.

Common Collector Amplifier

Chapter 3 – BJT | Module 3c – AC Analysis of BJT

2. Determine Zin, Zo, AV, Ai, and AVS. Vo when

Answer: IE=7.81mA, re= 3.33Ω, Zin = 412.2Ω , Zo = 1.8kΩ, AV

You might also like