This document provides specifications for 12 silicon power rectifier diodes rated for 300 amps and with voltage ratings between 400-1600 volts. Key specifications include: maximum average forward current of 300 amps, maximum peak surge currents between 5000-5200 amps, maximum repetitive reverse voltages between 400-1600 volts, and operating junction temperature range of -40 to +180 degrees Celsius. The document also provides thermal and mechanical specifications like maximum internal thermal resistance and required mounting torque.
This document provides specifications for 12 silicon power rectifier diodes rated for 300 amps and with voltage ratings between 400-1600 volts. Key specifications include: maximum average forward current of 300 amps, maximum peak surge currents between 5000-5200 amps, maximum repetitive reverse voltages between 400-1600 volts, and operating junction temperature range of -40 to +180 degrees Celsius. The document also provides thermal and mechanical specifications like maximum internal thermal resistance and required mounting torque.
This document provides specifications for 12 silicon power rectifier diodes rated for 300 amps and with voltage ratings between 400-1600 volts. Key specifications include: maximum average forward current of 300 amps, maximum peak surge currents between 5000-5200 amps, maximum repetitive reverse voltages between 400-1600 volts, and operating junction temperature range of -40 to +180 degrees Celsius. The document also provides thermal and mechanical specifications like maximum internal thermal resistance and required mounting torque.
Maximum Average Forward Current IF(AV) 180 sinusoidal condition, TC = +130C Max 300 A Maximum Peak One−Cycle IFSM t = 10ms No voltage 5000 A Non−Repetitive Surge Current reapplied t = 8.3ms 5200 A t = 10ms 100% VRRM 3800 A reapplied t = 8.3ms 4000 A Sinusoidal half wave, Maximum I2t for Fusing I2t t = 10ms No voltage Initial TJ = TJ max 214000 A2s reapplied t = 8.3ms 195000 A2s Maximum I2t for Individual Device t = 10ms 100% VRRM 151000 A2s Fusing reapplied t = 8.3ms 138000 A2s Maximum I2pt I2pt t = 0.1 to 10ms, no voltage reapplied 2140000 A2pt Maximum Value of Threshold VM (TO) TJ = +200C 0.610 V Voltage Maximum Value of Forward Slope rt TJ = +200C 0.751 m Resistance
Thermal−Mechanical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Operation Junction Temperature TJ −40 to + 180 C Maximum Storage Temperature Tstg −55 to + 180 C Maximum Internal Thermal Resistance RthJC DC operation 0.18 K/W Junction−to−Case Thermal Resistance, Case−to−Sink RthCS Mounting surface flat, smooth and 0.08 K/W greased Mounting Torque T Non−lubricated threads 40.06 mN (360) (inlb) 3.250 (82.55) 1.250 Max (31.75) Max .755 (19.2) Max .828 (21.03) Max