Assignment 1

Solve the problems. Submit the assignment on A4 sheet. The Assignment will be graded towards
th
the total course marks and should be submitted by 11 November 2020, 4:00PM. Late
submission will not be entertained.

1. At 300 K the lattice constant for germanium is 3.11 Å. Calculate the number of germanium
atoms per cubic centimeter and the density of germanium at room temperature.
17 3
2. A silicon ingot is doped with 10 arsenic atoms/cm . Find the carrier concentrations and the
Fermi level at room temperature (300 K).
3. If a plane has intercepts at 4(a), 2(a), and 3(a) along the three Cartesian coordinates, where a is the
lattice constant, find the Miller indices of the planes.
4. The variation of germanium and GaAs bandgaps with temperature can be expressed as Eg (T) = Eg(0)
2 -4
– αT /(T + β), where Eg(0) = 0.74 eV, α = 4.77 × 10 eV/K, and β = 235 K for germanium; and Eg(0)
-4
= 1.52 eV, α = 5.41 × 10 eV/ K, and β = 204 K for GaAs. Find the bandgaps of Ge and GaAs at 300
K, 400 K and 600 K.
5. A n-type Si is doped with ND acceptors close to the conduction band edge. A certain type of acceptor
impurity whose energy level is located at the intrinsic level is to be added to the semiconductor to
obtain perfect compensation. If we assume that simple Fermi-level statistics apply, what is the
concentration of acceptors required? Furthermore, after adding the acceptor impurity, what is the total
number of ionized impurities if the above sample is perfect compensation?
16 -3
6. For an n-type silicon sample with 10 cm phosphorous donor impurities and a donor level
at ED = 0.045 eV, find the ratio of the neutral donor density to the ionized donor density at
77 K where the Fermi level is 0.0459 below the bottom of the conduction band.
17
7. Silicon is doped with boron to a concentration of 4 x 10 atoms/cm3. Assume the intrinsic
10 3
carrier concentration of silicon to be 1.5 x 10 /cm and the value of kT to be 25 mV at 300
K. Compared to undoped silicon, the Fermi level of doped silicon
(a) goes down by 0.13 eV (b) goes up by 0.13 eV
(c) goes down by 0.427 eV (d) goes up by 0.427 eV (GATE 2008)
8. A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the
following statements is true for the energy band diagram shown in the following figure?

(a) Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor.
(b) Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor.
(c) Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor.
(d) Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor.
(GATE 2016)