AON6978

30V Dual Asymmetric N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology Q1 Q2

• Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V
• Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A
• Low Gate Charge
RDS(ON) (at VGS=10V) <5.7mΩ <3.8mΩ
• High Current Capability
• RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) <9.4mΩ <4.9mΩ

Application 100% UIS Tested

100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial

Top View Bottom View

DFN5X6B
Top View Bottom View

PIN1 Q2: SRFETTM

PIN1
Soft Recovery MOSFET:
Integrated Schottky Diode

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 ±12 V
Continuous Drain TC=25°C 28 36
ID
Current G TC=100°C 22 28 A
Pulsed Drain Current C IDM 112 144
Continuous Drain TA=25°C 20 28
IDSM A
Current TA=70°C 16 22
C
Avalanche Current IAS 40 60 A
Avalanche Energy L=0.01mH C EAS 8 18 mJ
VDS Spike 100ns VSPIKE 36 36 V
TC=25°C 31 33
PD W
Power Dissipation B TC=100°C 12 13
TA=25°C 3.6 4.3
A
PDSM W
Power Dissipation TA=70°C 2.3 2.7
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units
Maximum Junction-to-Ambient A t ≤ 10s 29 24 35 29 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 56 50 67 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 3.3 3 4 3.8 °C/W

Rev.1.0: June 2013 www.aosmd.com Page 1 of 10

 AON6978

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.8 2.2 V
VGS=10V, ID=20A 4.7 5.7
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.3 7.6
VGS=4.5V, ID=20A 7.5 9.4 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 62 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current G 28 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1010 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 474 pF
Crss Reverse Transfer Capacitance 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.6 2.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 14.4 25 nC
Qg(4.5V) Total Gate Charge 6.8 15 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 2.9 nC
Qgd Gate Drain Charge 2.5 nC
tD(on) Turn-On DelayTime 4.8 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 3.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 21 ns
tf Turn-Off Fall Time 3.8 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 24 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0: June 2013 www.aosmd.com Page 2 of 10

 AON6978

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V VDS=5V
5V
4.5V
80 80
7V 4V
60 60
ID (A)

ID(A)
40 40
VGS=3.0V 125°C

20 20
25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.6

Normalized On-Resistance
8 VGS=4.5V VGS=10V
1.4 ID=20A
Ω)
RDS(ON) (mΩ

6
1.2
4
VGS=10V VGS=4.5V
1 ID=20A
2

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

15 1.0E+02
ID=20A
ID=11.5A
1.0E+01

1.0E+00
10
Ω)
RDS(ON) (mΩ

125°C 1.0E-01 125°C

IS (A)

125°C 1.0E-02
5
1.0E-03 25°C

25°C 1.0E-04
25°C
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON6978

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1400
VDS=15V
ID=20A 1200 Ciss
8
1000

Capacitance (pF)
VGS (Volts)

6
800

600
4 Coss
400
2 Crss
200

0 0
0 5 10 15 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200
TJ(Max)=150°C
TC=25°C
100.0 160
RDS(ON) 10µs
limited
Power (W)

100us
ID (Amps)

10.0 120
1ms
1.0 100ms 80
TJ(Max)=150°C DC
TC=25°C
0.1 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Case (Note F)
Safe Operating Area (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=4°C/W
1

0.1
PD

Ton
Single Pulse T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6978

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 40
Power Dissipation (W)

Current rating ID(A)

30 30

20 20

10 10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)

10000

TA=25°C
1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=67°C/W

0.1

PD
0.01
Ton
Single Pulse T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.1.0: June 2013 www.aosmd.com Page 5 of 10

 AON6978

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 100
IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.6 2 V
VGS=10V, ID=20A 3.1 3.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 4.2 5.1
VGS=4.5V, ID=20A 3.9 4.9 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 160 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.52 0.65 V
IS Maximum Body-Diode Continuous Current G 36 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3276 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 513 pF
Crss Reverse Transfer Capacitance 57 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.7 1.1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 49 68 nC
Qg(4.5V) Total Gate Charge 20.6 30 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 7.0 nC
Qgd Gate Drain Charge 4.6 nC
tD(on) Turn-On DelayTime 8.0 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 4.0 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 36.0 ns
tf Turn-Off Fall Time 3.0 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13.6 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 24.7 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0: June 2013 www.aosmd.com Page 6 of 10

 AON6978

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
3V VDS=5V
4.5V 2.5V
80 80
10V

60 60
ID (A)

ID(A)
40 40 125°C

20 20 25°C
VGS=2V

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

8 1.6

Normalized On-Resistance
6 VGS=10V
1.4
ID=20A
Ω)
RDS(ON) (mΩ

VGS=4.5V
4 1.2

2 VGS=4.5V
1
VGS=10V ID=20A

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

8 1.0E+01
ID=20A
1.0E+00 125°C
6
125°C 1.0E-01
Ω)
RDS(ON) (mΩ

IS (A)

4 1.0E-02 25°C

1.0E-03
2 25°C

1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
(Note E) Figure 6: Body-Diode Characteristics (Note E)

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 AON6978

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4000
VDS=15V
ID=20A 3500
8
3000 Ciss

Capacitance (pF)
2500
VGS (Volts)

6
2000
4 1500

1000
2 Coss
500 Crss

0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=150°C
TC=25°C
100.0 400
RDS(ON) 10µs
limited
100µs
ID (Amps)

Power (W)

10.0 300
1ms
1.0 10ms
TJ(Max)=150°C DC 200
TC=25°C
0.1 100

0.0 0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Junction-to-Case
Figure 9: Maximum Forward Biased Safe (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=3.8°C/W
1

0.1 PD
Single Pulse
Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6978

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 40
Power Dissipation (W)

30 30

Current rating ID(A)

20 20

10 10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=60°C/W

0.1

PD
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.1.0: June 2013 www.aosmd.com Page 9 of 10

 AON6978

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.1.0: June 2013 www.aosmd.com Page 10 of 10