Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1

By D. A. Neamen Exercise Solutions

______________________________________________________________________________________

Chapter 1
Exercise Solutions TYU 1.2
(a) Number of atoms per (100) lattice plane
Ex 1.1 1
 4  1
(a) Number of atoms per unit cell 4
1 1 1 1
 8   6  4 Surface Density  2 
8 2 a 
4.65  10 8
2

4 4
(b) Volume Density  3  = 4.62  10 cm 14 2

a 
4.25  10 8 
3
(b) Number of atoms per (110) lattice plane
 5.21 10 22 cm 3 1
 4  1
_______________________________________ 4
Surface Density
Ex 1.2 1 1
 
Intercepts of plane; p=1, q=2, s=2
1 1 1 
  
a  a 2 4.65 10 8 2 2 
Inverse;  , ,   3.27  10 cm14 2
1 2 2 
(c) Number of atoms per (111) lattice plane
Multiply by lowest common denominator,
 211 plane
1 1
 3 
6 2
_______________________________________
1
Lattice plane area  bh
Ex 1.3 2
(a) Number of atoms per (100) plane where b  a 2
1
 1 4  2
1/ 2

   
2
2 1
4 ha 2  a 2 
2 2  2  
Surface Density  2 
a 
4.25  10 8 
2
 1 
1/ 2

  2a 2  a 2   a
3
 1.11 1015 cm 2  2  2
(b) Number of atoms per (110) plane Then lattice plane area

   3
1 1
 2  4  2 1
 a 2 a   3 a2
2 4 2  
Surface Density  2 2
2 2 Surface Density
 
  
a  a 2 4.25 10 8 
2
2
1
2
2   2.67  1014 cm 2
 7.83  10 cm
14

_______________________________________
2
3

4.65  10 8
2

Test Your Understanding Solutions _______________________________________
TYU 1.1 TYU 1.3
1 o
Number of atoms per unit cell  8   1 (a) For (100) planes, distance  a  4.83 A
8
(b) For (110) planes, distance
1
Volume Density  4  10 22  3 a 2 4.83 2 o
a    3.42 A
o 2 2
 a  2.92  10 8 cm  2.92 A _______________________________________
o
Radius  r  a 2  1.46 A
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

TYU 1.4
(a) 8 corner atoms
(b) 6 face-centered atoms
(c) 4 atoms totally enclosed
_______________________________________

TYU 1.5
Number of atoms in the unit cell
1 1
 8  6  4  8
8 2
8 8
Volume Density  3 
a 
5.43  10 8 
3

 5 10 22 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Chapter 2
Exercise Solutions  2 2 n 2
(b) E n 
2ma 2
Ex. 2.1
hc 6.625 10 3 10 
34 10

1.054 10   n 34 2 2 2

(a) E  h 


100  10 8 21.67  10 12  10 
 27 10 2

 1.9875  10 17 J  2.28  10 23 n 2 J

1.9875  10 17 2.27967  10 23 n 2
or E   124 eV or E n 
1.6  10 19 1.6  10 19

(b) E 

hc 6.625  10 34 3  10 10

   1.425  10 4 n 2 eV
 4500  10 8 Then E1  1.425  10 4 eV
 4.417  10 19 J E 2  5.70  10 4 eV
4.417  10 19 E 3  1.28  10 3 eV
or E   2.76 eV
1.6  10 19 _______________________________________
_______________________________________
Ex 2.4
Ex 2.2
(a) p  2mE E
1
2
1

m 2  9.11 10 31 10 5
2
2
 
 
 2 9.11 10 31 12  10 3 1.6 10 19  
1/ 2
 4.555  10 21 J
Now
 5.915  10 26 kg-m/s
h 6.625  10 34
   1.12  10 8 m
k2 
2m
Vo  E  Set Vo  3E
2
p 5.915  10  26
o
Then
or   112 A
2m2 E 
1
k2 
h 6.625  10 34 
(c) p  
 112  10 10

29.1110 24.555 10 
31 21 1/ 2

 5.915  10 26 kg-m/s 1.054 10 34

E
1 p 2 1 5.915  10

 26 2
 or
k 2  1.222  10 9 m 1
2 m 2 2.2  10 31
P  exp 2k 2 d 
= 7.952  10 21 J
o
7.952  10 21 (a) d  10 A  10  10 10 m
or E   4.97  10  2 eV
1.6  10 19  
P  exp  2  1.222  10 9 10  10 10  
_______________________________________ or
P  0.0868  8.68 %
Ex 2.3 o
 2 2 n 2 (b) d  100 A  100 10 10 m
(a) E n 
2ma 2  
P  exp  2  1.222  10 9 100  10 10  

1.054 10   n 34 2 2 2 or
P  2.43  10 11  2.43  10 9 %
2 9.1110 12 10 
 31 10 2

 4.179  10 20 n 2 J _______________________________________

4.179  10 20 n 2
or E n   0.261n 2 eV
1.6  10 19
Then
E1  0.261 eV, E 2  1.045 eV, E 3  2.351 eV
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Ex 2.5 TYU 2.2

(a) k 2 
2mVO  E  
(a) E  0.8 1.6  10 19  1.28  10 19 eV
 2
 1.054  10 34
t    8.23  10 16 s

  
2 9.11 10 31 1.2  0.12  1.6  10 19  E 1.28  10 19

1.054 10 
 34 2 (b) Same as part (a), t  8.23  10 16 s
_______________________________________
 5.3236  10 m 1 9

Then TYU 2.3

 0.12  0.12 
T  16 2mVO  E 
1   (a) k 2 
 1.2  1.2  2
 
 exp  2 5.3236  10 9
5 10 
10
 
2 9.1110 31 0.8  0.1 1.6  10 19  

T  7.02  10 3
1.054 10  34 2

 0.12  0.12 
(b) T  16 1   = 4.286  10 m 1 9

 1.2  1.2 
 0.1  0.1 
  
 exp  2 5.3236  10 9 25  10 10  T  16 1 
 0.8  0.8 


T  3.97  10 12
_______________________________________
 
 exp  2 4.2859  10 9 12  10 10  
5
T  5.97  10
Ex 2.6
(b) k 2 
 
2 9.11 10 31 1.5  0.1 1.6  10 19  
1.054 10 
From Example 2.6, we have  34 2
13.58 0.0992
En   eV
11.7  n
2 2
n2  6.061 10 m 1 9

E1  99.2 meV, E 2  24.8 meV,  0.1  0.1 

T  16 1  
E 3  11.0 meV  1.5  1.5 
_______________________________________  
 exp  2 6.061 10 9 12  10 10  
7
T  4.79  10
Test Your Understanding _______________________________________
TYU 2.1 TYU 2.4
 1.054 10 34 T  5  10 6
(a) p  
x 8  10 10  0.08  0.08 
 1.318  10 25 kg-m/s  16 1   exp 2k 2 a 
 0.8  0.8 
 d  p 2 
(b) E 
dE
 p      p so that exp 2k 2 a   2.88  10 5

dp  dp  2m  2k 2 a  12.571
pp
2p
  p 
k2 
 
2 9.1110 31 0.8  0.08 1.6  10 19  
1.054 10 
2m m
  
 34 2
23
1.2  10 1.318  10 25
E 
9.11 10 31  4.3467  10 9 m 1
Then
 1.735  10 18 J or  10.85 eV
12.571
_______________________________________ a  1.446  10 9 m

2 4.3467  10 9 
o
or a  14.46 A
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Chapter 3
Exercise Solutions Ex 3.3
4 2m 
3 / 2 2 eV

Ex 3.1 (a) N 
h3  E  dE
1 0
E m 2
4 2m 
3/ 2 2 eV
2 2
   E3/ 2
So h3 3 0

dE  2 m  d  m  d
1


4 2 9.11 10  31 3/ 2

6.625 10 
2
 34 3
or

  
 
E 10 12 1.6  10 19   21.6  10 
2 19 3/ 2

m 
9.11 10 31 10 5   3
 1.76  10 6 m/s  1.28  10 28 m 3
or
or   1.76  10 4 cm/s
_______________________________________ N  1.28  10 22 cm 3
4 2m 
3/ 2 2 eV
2
Ex 3.2 (b) N    E 3/ 2
h3 3 1eV
At ka   , we have
sin a  1.06286  10 56

1  8
a
 cos a 2

 2 3 / 2  13 / 2 1.6  10 19
3
 3/ 2

From Example 3.2, we have  2 a  5.141 ,
 8.29  10 27 m 3
or E 2  7.958  10 19 J.
or
At ka  2 , we see that  3 a  2 so
N  8.29  10 21 cm 3
2mE 3 _______________________________________
 a  2
2
Ex 3.4
or
2 2  2
E

4 2m p  3/ 2

E3 
2ma 2
N 
E  kT
h3
E  E  dE


2 2 1.054 10 34 2 
4 2m p 3/ 2
2 E

 4.5 10       E  E 
3/ 2
 31 10 2
2 9.11 10 h3  3  E  kT
18
 1.189  10 J
Then
E  E 3  E 2 
 
4 20.56  9.11 10 31  3/ 2

18
 1.189  10  7.958  10 19
6.625 10   34 3

 3.929  10 19 J
2
  0.02591.6 10 
 1
19 3/ 2

Or 
3 
3.929  10 19  7.92  10 24 m 3
E   2.46 eV or
1.6  10 19
_______________________________________ N  7.92  10 18 cm 3
_______________________________________

Ex 3.5
gi !

10!

1098!  45
N i ! g i  N i ! 8! 10  8! 8!2 1
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Ex 3.6 Then
  E  E F     E  E F  
(a) f F E   exp   exp    0.02
 kT   kT 
  E c  kT 4  E F    1 
 exp   E  E F  kT ln   3.9kT
 kT   0.02 
  0.30  0.0259 4   _______________________________________
 exp  
 0.0259 
 7.26  10 6 Test Your Understanding Solutions
  E  E F  
(b) f F E   exp   TYU 3.1
 kT 
At ka  2 , we see that  3 a  2 , so
  0.30  0.0259  
 exp   2mE 3
 0.0259   a  2
6 2
 3.43  10
_______________________________________ or

E3 
2 2  2
Ex 3.7 2ma 2
  E  E F   2 2 1.054 10 34 2
f F E   exp   
 kT 
 
2 9.11 10 31 4.5  10 10 
2


8  10  6  exp 
 0. 30  0.025 
 1.189  10 18 J

 kT  At the other point,  4 a is in the range
  0.325  2   4 a  3 . Then from
  1.25  10
5
exp 
 kT  sin  4 a
1  8  cos  4 a
0.325
kT
 
 ln 1.25 10 5  11.736 4a
we find, by trial and error,
 T   4 a  7.870 . Then
 0.02769  0.0259
0.325
kT  
11.736  300 
E4 
7.8702  2
so 2ma 2
T  321 K
_______________________________________ 
7.8702 1.054 10 34 2
 
2 9.11 10 31 4.5  10 10 
2

Ex 3.8
 1.8649  10 18 J
  E  E F   1
exp   Then
 kT   E  EF  E g  E4  E3
1  exp  
 kT   1.8649  10 18  1.189  10 18
 0.02
1
 6.762  10 19 J
 E  EF 
1  exp   or
 kT  6.762  10 19
Eg   4.23 eV
  E  E F     E  EF  1.6  10 19
exp   1  exp  kT    1  0.02
 kT    _______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

TYU 3.2 m p 2
From Example 3.2, for ka   ,   1 a   We have 
mo 2m o C 2
and E1  2.972  10 19 J.
For 0  a   and ka  0 , we have 
1.054 10  34 2

sin a 29.11 10 2.0426  10 

 31  38

1  8  cos a
a m p
By trial and error, a  2.529 rad. or  0.2985
mo
Then
2mE _______________________________________
 a  2.529
2 TYU3.5
E
2.5292  2 
2.5292 1.054 10 34 2 1  f F E   1 
1
2ma 2

2 9.11 10  31
4.5 10 
10 2  E  EF 
1  exp  
 1.9258  10 J 19  kT 
Then   E F  E  
 exp  
E  2.972 10 19  1.9258 10 19  kT 
 1.046  10 19 J   0.35  0.0259 2  
or (a) 1  f F E   exp  
 0.0259 
1.046  10 19
E   0.654 eV  8.20  10 7
1.6  10 19
  0.35  30.0259 2  
_______________________________________ (b) 1  f F E   exp  
 0.0259 
TYU 3.3  3.02  10 7
We have E  E c  C1 k 2 _______________________________________
E c  0.32  E c 1.6 10 19 
TYU 3.6

2
   400 
 C1  10
 We find kT  0.0259   0.034533 eV
 10  10   300 
so that C1  5.1876  10 39   E c  kT 4  E F  
(a) f F E   exp  
We have  kT 
2 m 2   0.30  0.034533 4  
m     exp 
2C1 m o 2 m o C1 
 0.034533 

1.054 10  34 2
 1.31 10 4
29.11 10 5.1876  10 
 31  39
  0.30  0.034533 
or (b) f F E   exp  

 0.034533 
m
 1.175  6.21 10 5
mo _______________________________________
_______________________________________

TYU 3.4
We have E  E  C 2 k 2
E  0.875  E 1.6 10 19 

2
 
 C 2  10

 12  10 
so that C 2  2.0426  10 38
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

TYU 3.7
 400 
We find kT  0.0259   0.034533
 300 
  0.35  0.034533 2  
(a) 1  f F E   exp  
 0.034533 
 2.41 10 5
  0.35  30.034533 2  
(b) 1  f F E   exp  
 0.034533 
 8.85  10 6
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Chapter 4
Exercise Solutions
Ex 4.1 n i  3.29  10 9 cm 3
  E  E F   For T  250 K,
f F  exp  
 
  
kT 3
 250 
ni2  4.7  1017 7 1018  
  E c  kT  E F    300 
 exp  
 kT    1.42 
 exp 
  0.25  0.0259  
 0.0259 250 300  
 exp  
 0.0259   5.09  10 7
5
f F  2.36  10 or
  E c  E F   n i  7.13  10 3 cm 3
n o  N c exp  
 kT  (b)
n i 400 3.288  10 9
 
 4.7  1017 exp 
  0 . 25 


n i 250 7.135  10 3
 4.6110 5
 0.0259 
_______________________________________
n o  3.02  1013 cm 3
_______________________________________ Ex 4.4
(a) GaAs
Ex 4.2  m p 
3
E Fi  E midgap  kT ln  
 
3/ 2
 250   mn 
(a) N   1.04  10 19
  4  
 300 
 7.9115  1018 cm 3
3
 0.0259 ln 0.48 
4  0.067 
 250 
kT  0.0259    0.021583 eV  38.25 meV
 300  (b) Ge
  E F  E  
p o  N  exp  
3
0.0259 ln 0.37 
E Fi  E midgap 
 kT  4  0.55 

 7.9115  1018 exp 


 0.27 

 7.70 meV
 0.021583  _______________________________________
p o  2.919  1013 cm 3 Ex 4.5
(b) Ratio 
2.919  10 13
 4.54  10 3   E F  E  
p o  N  exp  
6.43  10 15
 kT 
_______________________________________

 1.04  1019 exp   0.215 

Ex 4.3  0.0259 
(a) For T  400 K,  2.58  1015 cm 3
We find E c  E F  1.12  0.215  0.905 eV
  
3
 400 
n i2  4.7  10 17 7  10 18  
 300    E c  E F  
n o  N c exp  
  1.42   kT 
 exp  
 0.0259400 300   
 2.8  1019 exp 
  0.905 

 1.081 10 19  0.0259 
or  1.87 10 4 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Ex 4.6 pa 1

no 
2
N c F1 / 2  F  po  pa
1
7.912 10  exp  0.045 
18

 410  16  0.021583 
 
1.5  10 20 
2
2.8 10 F  
19
1/ 2 F
 3.91 10 2
 (b) T  200 K
So F1 / 2  F   4.748
 
3/ 2
 200 
E  Ec N   1.04  1019    5.661 1018 cm 3
From Figure 4.10,  F  3.2  F  300 
kT
 200 
 E F  E c  3.20.0259  0.08288 eV kT  0.0259   0.017267 eV
 300 
_______________________________________
pa 1

Ex 4.7 po  pa
1

5.661 10 18
  0.045  
 
(a) T  250 K exp  
 0.017267 
16
4 10
 
3/ 2
 250  3  8.736  10 2
N c  2.8  10 19
   2.13  10 cm 19

 300  _______________________________________
 250 
kT  0.0259   0.021583 eV Ex 4.9
 300  From Example 4.3,
nd

1 ni 250  7.0  10 7 cm 3
no  nd   E c  E d  
n i 400   2.38  10 12 cm 3
Nc
1 exp  
2N d  kT  Then
1 (a) T  250 K

1
2.13 10  exp  0.045 
19
Nd  Na  N  Na 
2

210   0.02158 

16
 no    d   n i2
2  2 
 7.50  10 3
7  1015  3  1015
(b) T  200 K 
2
 
3/ 2
 200 
N c  2.8  10 19    1.524  1019 cm 3  7  10 15  3  10 15 
2
 300    
  7  10 7
  2

 200   2 
kT  0.0259   0.017267 eV
 300  n o  4  1015 cm 3
nd

1 n i2 7  10 7   2

no  nd
1
1.524  1019    0.045   po 
no

4  10 15
 1.225 cm 3

 
exp  
 0.017267  (b) T  400 K
16
2 10
 1.75  10 2 7  1015  3  1015
no 
(c) Fraction increases as temperature 2
decreases. 2
 7  10 15  3  10 15 
_______________________________________   
  2.38  1012
 
2

 2 
Ex 4.8
(a) T  250 K n o  4  10 15 cm 3


N   1.04  10 19

 250 
 
3/ 2

 7.912  10 cm 18 3
po 
2.38 10  12 2
 1.416  10 9 cm 3
 300  4  10 15
_______________________________________
 250 
kT  0.0259   0.021583 eV
 300 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Ex 4.10 4  1016  8  1015

For T  250 K, po 
2
  
3
 250 
n i2  1.04  10 19 6  10 18 
2
  4  1016  8  1015 
 300    
  1.5  1010
 
2

 2 
  0.66 
 exp   p o  3.2  10 16 cm 3
 0.0259 250 300  
 1.894  10 24 no 
n i2


1.5  1010  2

 7.03  10 3 cm 3
or n i  1.376  10 12 cm 3 po 3.2 1016
For T  350 K, (b) p o  n o  n i  1.5  10 10 cm 3
_______________________________________
  
3
 350 
n i2  1.04  10 19 6  10 18  
 300  Ex 4.12
  0.66  n o  N d  N a  8  10 15  5  10 15
 exp  
 0.0259  350 300  n o  3 10 15 cm 3
 3.236  10 28
N 
E c  E F  kT ln c 

or n i  1.80  10 14 cm 3  no 
(a) T  250 K
 2.8  1019 
2  10 14  0.0259  ln 15 

no   3  10 
2
2
E c  E F  0.2368 eV
 2  10 14 
  
  1.376  10 12
 
2 _______________________________________
 2 
Ex 4.13
n o  2 10 14 cm 3
N 
n2
po  i 

1.376  10 12 
2

 9.47  10 cm 9 3
E c  E F  kT ln c 
 no 
no 2  1014 We have E c  E F  E c  E d   E d  E F 
(b) T  350 K
 0.05  3kT  0.05  30.0259
2  10 14  0.1277 eV
no 
2
N 
2 So 0.1277  0.0259  ln c 
 2  10 14 
  
  1.80  10 14
 
2
 no 
 2  Nc
Or  exp4.9305  138.45
n o  3.059  1014 cm 3 no

po 
1.80 10  14 2
 1.059  10 cm 14 3 Then n o 
Nc

2.8  1019
3.059  1014 138.45 138.45
_______________________________________ n o  2.02  1017 cm 3
_______________________________________
Ex 4.11
Na  Nd
(a) p o 
2
2
 N  Nd 
  a   n i2
 2 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Test Your Understanding Solutions

TYU 4.1 n i 450 1.7224  1013
(c)   2.26  10 8
  E c  E F   n i 200 7.6334  10 4
n o  N c exp  
 kT  _______________________________________
  0.22 
 2.8  1019 exp  TYU 4.4
 0.0259 
  
3
 200 
 5.73  10 cm15 3 (a) n i2  4.7  1017 7.0  1018  
 300 
Now
E F  E  1.12  0.22  0.90 eV   1.42 
 exp  
  E F  E    0.0259200 300 
p o  N  exp  
 kT   1.874
  n i  1.37 cm 3
 0. 90 
 1.04  1019 exp 
  
3
 0.0259   450 
(b) n i2  4.7  1017 7.0  1018  
 8.43  10 3 cm 3  300 
_______________________________________   1.42 
 exp  
TYU 4.2  0.0259450 300 
  0.30   1.485  10 21
p o  7.0  1018 exp 
 0.0259   n i  3.85  10 10 cm 3
 6.53  1013 cm 3 n i 450 3.853  1010
(c)   2.81 1010
Now n i 200 1.369
E c  E F  1.42  0.30  1.12 eV _______________________________________
  1.12 
n o  4.7  1017 exp  TYU 4.5
 0.0259 
  
3
 200 
 0.0779 cm 3 (a) n i2  1.04  1019 6.0  1018  
_______________________________________  300 
  0.66 
 exp  
 0.0259200 300 
TYU 4.3

  
3
 200 
(a) n i2  2.8  1019 1.04  1019    4.639  10 20
 300 
 n i  2.15  10 10 cm 3
  1.12 
 exp 
  
3
  450 
 0.0259200 300  (b) n i2  1.04  10 19 6.0  1018  
 300 
 5.827  10 9
  0.66 
 n i  7.63  10 4 cm 3  exp  
 0.0259 450 300  
  
3
 450 
(b) n i2  2.8  1019 1.04  1019    8.820  10 30
 300 
 n i  2.97  10 15 cm 3
  1.12 
 exp   n i 450 2.9699  1015
  
 0.0259 450 300  (c) 
n i 200 2.1539  1010
 1.38  10 5
 2.967  10 26 _______________________________________
 n i  1.72  10 13 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

TYU 4.6
N  F1 / 2  F 
2
(b) p o 
3  m p  
E Fi  E midgap  kT ln  
4  mn  For E  E F ,  F  0 and F1 / 2 0   0.65
 
3
(a) E Fi  E midgap  0.0259 200  ln 0.56  po 
2
1.04 10 0.65
19

4  300   1.08  
 8.505 meV p o  7.63  1018 cm 3
 400   0.56  _______________________________________
(b) E Fi  E midgap  0.0259
3
 ln 
4  300   1.08 
TYU 4.9
 17.01 meV pa 1
_______________________________________ 
po  pa N    E a  E  
1   exp  
TYU 4.7 4N a  kT 
(a) GaAs: 1
 m  
  m o e 4 1.04  10 19
  0.045 
 1 exp 
E
 o
m  
4 1017  0.0259 
2 2 4 
2
or



 0.067  9.11 10 1.6 10 
31 19 4 pa
 0.179
po  pa

2 1.054  10 34  4 13.18.85 10 
2 12 2

_______________________________________
 8.4823  10 22 J
or E  5.30 meV TYU 4.10
Also We have
 m  113.1
 
3/ 2
r1
r  o    195.5  T 
N c  2.8  1019  
ao m  0.067  300 
(b) Ge: For T  100 K, N c  5.389  1018 cm 3
Conductivity effective mass
1 1 T  200 K, N c  1.524  10 19 cm 3
m ce  1 2   1 2 
 3    3   T  300 K, N c  2.8  10 19 cm 3
mo  m1 m 2   1.64 0.082 
 0.120 T  400 K, N c  4.311 10 19 cm 3

E
 
 0.12 9.11 10 31 1.6  10 19 4
kT  0.0259
 T 


2 1.054  10  4 16.08.85 10 
 34 2 12 2
 300 
For T  100 K, kT  0.008633 eV
 1.0184  10 21 J
T  200 K, kT  0.01727 eV
or E  6.37 meV
Also T  300 K, kT  0.0259 eV
r1 116 T  400 K, kT  0.03453 eV
  133.3 Fraction of ionized impurity atoms
ao 0.12
nd
_______________________________________  1
no  nd
TYU 4.8
N c F1 / 2  F 
2
(a) n o 

For E c  E F ,  F  0 and F1 / 2 0   0.65

no 
2
2.8 10 0.65
19


n o  2.05  10 19 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

(a) For T  100 K, TYU 4.11

nd 1 p o  N a  N d  2  1016  5  10 15

no  nd N   E c  E d    1.5  1016 cm 3
1  c exp  
2N d  kT  Then


1
no 
ni2


1.8  10 6 2

5.389  1018   0.045  po 1.5  1016

1 exp 
 
2 1015  0.008633   2.16  10 4 cm 3
 0.0638 _______________________________________
Now, percentage ionized atoms
 1  0.0638  100  93.62 % TYU 4.12
(b) For T  200 K, Nd N 
2

nd 1 (b) n    d   ni2
 2  2 
no  nd Nc   E c  E d  
1 exp   Then
 
5 10 
2N d kT 14 2
1.1 1015  5  1014   n i2
1
 which yields
1.524  1019   0.045 
1 exp  n i2  1.1 10 29
 
2 10 15
 0.01727 
Now
 0.001774
  Eg 
Now, percentage ionized atoms ni2  N c N  exp 

 1  0.001774 100  99.82 %  kT 
(c) For T  300 K,
  
3
 T 
nd 1 1.1 10 29  2.8  1019 1.04  1019  
  300 
no  nd Nc   E c  E d  
1 exp     1.12 
2N d  kT   exp  
 0.0259 T 300  
1
 By trial and error,
2.8  1019   0.045  T  552 K
1 exp 
 
2 10 15
 0.0259  _______________________________________
 0.000406
Now, percentage ionized atoms TYU 4.13
 1  0.000406 100  99.96 % At T  550 K,

  
3
(d) For T  400 K,  550 
ni2  2.8  1019 1.04  1019  
nd

1  300 
no  nd N   E c  E d     1.12 
1  c exp    exp  
   0.0259550 300 
2N d kT
1
  1.0236  10 29
4.311 10 19
  0.045 
1 exp  or n i  3.20  10 14 cm 3
 
2 1015  0.03453  2
 0.000171 N N 
n o  d   d   ni2
Now, percentage ionized atoms 2  2 
 1  0.000171  100  99.98 % Set n o  1.05 N d
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________
Then
2

1.05  0.5N d    N d   ni2

2

 2 
0.22913N d  ni
3.20  1014
or N d   1.40  1015 cm 3
0.22913
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Chapter 5
Exercise Solutions
Ex 5.1 Ex 5.5
J drf  e p p o   e p N a  J p  eD p
dp
 
75  1.6  10 19 480N a 120
dx

which yields N a  8.14  1015 cm 3  eD p

d
dx

1016 e p
x L

_______________________________________
 1  x Lp
 
 eD p 10 16 
 Lp 
e
Ex 5.2 Using Figure 5.2;  
(a) T  25 C,
(i) N a  1016 cm 3 ,   p  410 cm 2 /V-s 
 eD p 10 
16
x L
e p
Lp
(ii) N a  1018 cm 3 ,   p  130 cm 2 /V-s
3 
1.6 10 810  e
19 16
x Lp
(b) N a  10 cm , 14
2  10 4

(i) T  0 C,   p  550 cm 2 /V-s x

J p  64 exp 
(ii) T  100 C,   p  300 cm 2 /V-s  Lp 
 
_______________________________________ (a) For x  0 ,
J p  64 A/cm 2
Ex 5.3
(a) For N I  N a  N d  2.8  10 17  8  10 16 (b) For x  2 10 4 cm,
  2  10 4 
 3.6  1017 cm 3 , J p  64 exp   23.54 A/cm 2
4 
  p  200 cm 2 /V-s  2  10 
(b)   e p N a  N d  (c) For x  10 3 cm,

  
 1.6  10 19 200  2  10 17    10 3 
J p  64 exp   0.431 A/cm 2
4 
 2  10 
  6.4 (  -cm) 1
_______________________________________
1 1
(c)   
 0.156  -cm
 6.4 Ex 5.6
_______________________________________ dN d  x 

 
10 16  x L
e
dx L
Ex 5.4
So
V 5
(a) R    2500    10 16   x L
I 2  10 3  e
 
(b)  
RA 2500  10 6

 
 2.083  -cm  x  
 kT   L 
 16  x L
L 1.2  10 3  e  10 e
1 1  kT  1  0.0259
(c)     0.480 (  -cm) 1    
 2.083  e  L  2  10
2

 e p N a or  x  1.295 V/cm
0.48 _______________________________________
Then  p N a   3.00  1018
1.6  10 19
Using Figure 5.3 and trial and error,
N a  7.3  10 15 cm 3
(d)  p  410 cm 2 /V-s
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________
(b)   e n N d  N a 
Ex 5.7
Dn 215

 1.6  10 19 1000  3  10 16   
n   or
 kT  0.0259
    4.8 (  -cm) 1
 e  We find
 n  8301 cm 2 /V-s 1 1
   0.208 (  -cm)
_______________________________________  4.8
_______________________________________
Ex 5.8
From Equation (5.59), TYU 5.3
 
 p epV xWd  1
Ix    e n N d 
L 

   
320 1.6 10 19 1016 10 10 2 8 10 4  So 
0.2

1.6  10 19  n N d 
1

 10
I x  2.048  10 4 A 0.1
or I x  0.2048 mA  n N d  6.25  1019
From Equation (5.53), Using Figure 5.3 and trial and error,
I B
VH  x z 

2.048  10 4 5  10 2   N d  6  10 16 cm 3 and
epd  
1.6  10 19 10 22 8  10  6    n  1050 cm 2 /V-s
4
 8  10 V _______________________________________
or V H  0.80 mV
_______________________________________ TYU 5.4
dn  1015  x
J diff  eDn  eDn   4  exp
 L 

dx  10   n 
We have D n  25 cm 2 /s
Test Your Understanding Solutions Ln  10 4 cm  1  m
Then
TYU 5.1
x
n o  N d  N a  1015  1014  9  1014 cm J diff  40 exp  A/cm
2

 1 
Also
(a) x  0 , J diff  40 A/cm 2
n2
po  i 

1.5  1010 
2

 2.5  10 5 cm 3 (b) x  1  m, J diff  14.7 A/cm 2

no 9  10 14

Now (c) x   , J diff  0

 
J drf  e  n n o   p p o   e n n o  _______________________________________

 1.6  10 19
13509 10 35
14
TYU 5.5
or dp
J drf  6.80 A/cm 2 J diff  eD p
dx
_______________________________________ So

TYU 5.2 
20   1.6  10 19 10  0 0p.010
(a) For N I  7  1016 cm 3 ,
 p  1.25  1017  4  1017  p
 n  1000 cm /V-s;  p  350 cm /V-s
2 2
And
p x  0.01  2.75  10 17 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Chapter 6
Exercise Solutions
Ex 6.1 Ex 6.4

R n 
n 1015 e t / 10

6

cm 3 s 1
(a) Ln  D n no  25 5 10 7    1/ 2

 no 10  6  3.536  10 3 cm
10 15 or L  35.36  m
For t  0 , R n   10 21 cm 3 s 1
10  6 (b) n  1015 e  x / Ln ( x  0 )
t  1  s, or n  1015 e  x / Ln ( x  0 )
10 15 e 1 / 1 (i) n  1015 e 0  1015 cm 3
R n   3.68  10 20 cm 3 s 1
10  6 (ii) n  1015 e 30 / 35.36  4.28 1014 cm 3
t  4  s, (iii) n  1015 e 50 / 35.36  2.43  1014 cm 3
1015 e 4 / 1 (iv) n  1015 e 85 / 35.36  9.04 1013 cm 3
R n   1.83  1019 cm 3 s 1
10  6 (v) n  1015 e 120 / 35.36  3.36  1013 cm 3
t  10  s, _______________________________________
1015 e 10 / 1
R n   4.54  10 16 cm 3 s 1 Ex 6.5
10  6

  x   p 0t 2 
t /  p 0

px, t  
_______________________________________ e
 
 
exp
4D p t  
1/ 2
4D p t
Ex 6.2
(a) 10 14 e t / 50  1014 e 1  
(a)  p  0 t  400100  10 7  4  10 3 cm
 t  50 ns or  40  m
(b) 1014 e t / 50  1013 (i) x  20  m.

  1014 

t  50  10 9 ln 13   1.15  10  7 s p 
0.36788
exp 

   2  10 3 
2


 10  3.545  10 3  4  10
6

or t  115 ns
 38.18
_______________________________________
(ii) x  40  m,

exp0
Ex 6.3 0.36788
p 
(a) pt   g  po 1  e   t /  po
 3.545  10 3
 103.8

 5  10 21 10 7 1  e    t /  po
 (iii) x  60  m,
 5  10 1  e 14
  t /  po
 0.36788   2  10 3  
2

p 
(i) p 0   5  10 1  e 14
 0
 0 3.545 10 3
exp 
 4  10
6



(ii) p 10 7
  5 10 1  e  14 1 / 1
p  38.18
 3.16  1014 cm 3 (b) x  40  m

(iii) p 5  10 7
  5  10 14 1  e 5 / 1  (i) t  5  10 8 s,
 4.966  1014 cm 3
p 
0.60653   2  10 3
exp 
  2


(iv) p    5  10 14 1  e    2.50663  10 3
 2  10
6

 5 1014 cm 3  32.75
(b) p max   5  1014  0.01N d
Yes, low-injection condition is met.
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

(ii) t  10 7 s, (b) Quasi-Fermi levels,

 p  p 
exp0
0.36788 E Fi  E Fp  kT ln o 
p  
3.545  10 3  ni 
 103.8  7  1015  4 1014 
(iii) t  2  10 7 s,  0.0259  ln 

 1.5  1010 
p 
0.1353
exp 

   4 10 3 2 

  0.33952 eV
5.013 10 3  8  10
6
  n  n 
E Fn  E Fi  kT ln o 

 3.65  ni 
_______________________________________
 3.214  10 4  4  1014 
 0.0259 ln 

Ex 6.6  1.5 1010 
(a) For N d  5 1015 cm 3 in GaAs, from  0.26395 eV
_______________________________________
Figure 5.3,  n  7500 cm 2 /V-s.
  e n N d  1.6  10 19 75005  1015  Ex 6.8
 6 (  -cm) 1 n-type; n o  10 15 cm 3 , p o  2.25  10 5 cm 3
 13.1 8.85  10 14
Then  d  
  n  p  1014 cm 3 ,
 6  no   po  5  10 7 s
13
 1.93  10 s We have
or  d  0.193 ps
R
n  n  p o  p   n i2
o 
 po n o  n  n i    no  p o  p  n i 
3
(b) For N a  2  10 cm 16
in silicon, from
Figure 5.3,  p  400 cm 2 /V-s.
   
 1015  1014 1014  1.5 1010  2

  e p N a  1.6  10 19 4002  1016   5  10 10  10   5  10 10 

7 15 14 7 14

1
 1.28 (  -cm) or
Then  d  
 11.7  8.85  10 14   R  1.83  10 20 cm 3 s 1
 1.28 _______________________________________
 8.09 10 13 s
Ex 6.9
or  d  0.809 ps
  p0s 
_______________________________________ (a) For  p 0 s  0  p s  p B  0
  p0 
 
Ex 6.7 From Equation (6.109),
p o  N a  N d  10 16  3  1015 px   g  p 0  Ae
 x / Lp
 Be
x / Lp

 7  1015 cm 3 As x  , p  g  p 0  1014 cm 3
no 
n

2
i 
1.5  10 
10 2
 3.214  10 4 cm 3  A0
po 7 1015 As x  0, p  0  B   g  p 0
(a) In thermal equilibrium,
p 

Then px   g  p 0 1  e
x / Lp

E Fi  E F  kT ln o  (b) px  0  0
 ni 
p0 p0
 7  1015  (c) R     R  
 0.0259 ln 

 p0s 0
 1.5  10
10
 Note: p0  0 is a result of R    .
 0.33808 eV
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Ex 6.10 TYU 6.4

  x / Lp
 n-type; Minority carriers = holes
(a) p x   g  p 0 1 
se  d px 

 
D p L p  s   J diff  eD p
dp
 eD p
dx dx
(i) For s   ,

1.6  10 10 10
19
  
    10 
15

px   g  p 0 1  e  exp 
x / Lp
4
 (31.6  10 )  31.6 
(ii) For s  0 , Then hole diffusion current density
px   g  p 0 J diff  0.369 A/cm 2
(b)
We have
(i) For s   , p0  0
J diff (electrons)   J diff (holes)
(ii) For s  0 , p0  g  p 0 ,
Then electron diffusion current density
 p x   constant J diff  0.369 A/cm 2
_______________________________________ _______________________________________

TYU 6.5
Test Your Understanding Solutions 
exp  t  po 
p 
TYU 6.1 4 D t 
p
1/ 2

(a) p-type; Minority carriers = electrons exp 1 5

 p  73.0
4 1010 
(a)
 t 
(b) nt   n0 exp
6 1/ 2


  no  exp 5 5
 p  14.7
4 105 10 
Then (b) 1/ 2
6

 t 
nt   1015 exp  cm
3
exp 15 5
 5  10 
6
 p  1.15
4 1015 10 
(c) 1/ 2
6
_______________________________________
exp 25 5
 p  0.120
4 1025 10 
(d)
TYU 6.2 6 1/ 2

(a) p-type; Minority carriers = electrons

Now
   t 
(b) nt   g  no 1  exp  x   p  o t  386 10  t

   no  Then
(a) x  38.6  m
  
  t
 10 20 5  10  6 1  exp 6

 (b) x  193  m
  5  10 
(c) x  579  m
  t 
or nt   5  1014 1  exp 6
 (d) x  965  m
  5  10  _______________________________________
(c) As t   , n   5 1014 cm 3
_______________________________________

TYU 6.3
x
nx   px   n0  exp 
 Lp 
 
L p  D p po  1010 6   31.6 10 4 cm
Then
x  
nx   px   1015 exp 4
 cm
3

 31.6  10 
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

TYU 6.6 (c) (i) x   p  o t

Using the results from TYU 6.5, we find

exp  t  p 
  x   pot 2     6.50  10 2  386 10  15  10 6 
p      7.1 10 3

 
exp
4 D p t  
1/ 2
4D p t
(a) (i) x   p  o t p  1.15 exp 

  7.1 10 3 2  

 410 15  10
6
  
 1.093  10 2  386 10  10 6   or
 7.07  10 3 p  1.06

p 
exp 1 5   7.07  10
 exp 
 
3 2 

(ii) x   p  o t
 
4 10 10  6 
1/ 2
 410 10
6
    5.08  10 2  386 10  15  10 6  
 
3
  7.07  10 3 2   7.1 10
 73.0 exp  
 410 10
6
   p  1.15 exp 

   7.1 10 3 2 


or 
 410 15  10 
6

p  20.9 or
(ii) x   p  o t p  1.06
 3.21 10 3  386 10  10 6   _______________________________________

 7.07  10 3

p  73.0 exp 

   7.07  10 3  2


 410 10
6
  
or
p  20.9
(b) (i) x   p  o t
 2.64  10 2  38610 5  10 6  
3
 7.1 10

p  14.7 exp 

  7.1 10 3 2  

 410 5  10
6
  
or
p  11.4
(ii) x   p  o t
 1.22  10 2  386 10  5  10 6  
3
 7.1 10

   7.1 10 3 2 
p  14.7 exp  

 410 5  10
6
  
or
p  11.4
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 7
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Chapter 7
Exercise Solutions

 211.7  8.85  10 14 0.7184
xp  

Ex 7.1
 
1.6  10 19 
N N 
(a) Vbi  Vt ln a 2 d  1/ 2
  5  10 16  1 
 ni    
 5  1015  5  10 16 
 5  10
15
 
(i) Vbi  0.0259 ln 

 5  1015 1017 

   x p  4.11 10 5 cm
 1.5  1010 
2
  Now
 0.736 V W  x n  x p  4.11 10 6  4.11 10 5
(ii) Vbi  0.0259 ln 

 2  1016 2  1015 

   4.52  10 5 cm
 1.5  1010
2
   Now
 0.671 V eN d x n
 max 
(b) s

(i) Vbi  0.0259  ln 


 5  1015 1017 

  
1.6 10 5 10 4.1110 
19 16 6

 1.8  10 6 
2
  11.7 8.85 10  14

 1.20 V  3.18  10 4 V/cm

(ii) Vbi  0.0259 ln 


 2 1016 2 1015 

  _______________________________________

 1.8 10 6
2
   Ex 7.3
 1.14 V N N 
_______________________________________ (a) Vbi  Vt ln a 2 d 

 ni 
Ex 7.2 
 5 1015 5  1016
 0.0259 ln 
 
N N
Vbi  Vt ln a 2 d



 1.5 1010
2
  
 ni   0.718 V

 0.0259  ln 

 5  10 16 5  10 15    2  V  V R   N a
x n   s bi 


1 

1/ 2

 1.5  10 10 2
   N  N  N 
e  d  a d 

 0.7184 V 
 211.7  8.85  10 14 0.7184  4


Then
1/ 2  1.6  10 19
 2  V  N  1 
x n   s bi  a   1/ 2
  5  1015  1 
 e  N d  N a  N d    
 5  1015  5  1016 
 5  10 
16



 211.7  8.85  10 14 0.7184  
 
1.6  10 19   1.054  10 5 cm
or x n  0.1054  m
1/ 2
 5  10 15  1   2  V  V R   N d  
1/ 2
  
 5  1015  5  10 16  1
x p   s bi   
 5  10    N  N 
16
 N
e  a  a d 
 x n  4.11 10 6 cm

 211.7  8.85  10 14 0.7184  4


 1.6  10 19
1/ 2
 5  10 16  1 
  
 5  10 15  5  10 16 
 5  10 
15

 1.054  10 4 cm
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 7
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

or x p  1.054  m

Now 7.2  10 4 2


 2 1.6  10 19 Vbi  V R  
 2  V  V R   N a  N d 
1/ 2
 13.1 8.85  10 14  
W   s bi  
 e  N N
 a d




 5  10 3  10 15
 16
 



 211.7  8.85  10 14 0.7184  4   5  10  3  10
15 16
 
 1.6  10 19 5.184  10 9  1.1829  10 9 Vbi  V R 
 5  1015  5 1016  
1/ 2
Vbi  V R  1.173  V R  4.382


 5 10 5 10
15 16
 
 
Then V R  3.21 V
4
_______________________________________
 1.159  10 cm
or W  1.159  m Ex 7.5
(b) Vbi  0.718 V N N 
(a) Vbi  Vt ln a 2 d 
xn  

 211.7  8.85  10 14 0.7184  8   ni


 1.6  10  10 19

 2  1016 5  10 15 
 0.0259 ln  
 
 
1/ 2
 5  10    
15 2
  
1
 1.8  10 6
 5  10 15  5  10 16
 5  10 
16
  1.16 V
1/ 2
 1.432  10 5 cm  e s N a N d 
(b) C    
 2Vbi  V R N a  N d  
or x n  0.1432  m

xp  

 211.7  8.85  10 14 0.7184  8   
 1.6  10 19 13.1 8.85  10 14  

 1.6  10 19
 21.162  4 

5 10 2 10  

1/ 2
 5  10 16  
1/ 2
1 15 16
    
 5  10
15  5  10 15  5  10 16
  5 10  2 10  15 16

 1.432  10 4 cm C   8.48  10 9 F/cm 2

or x p  1.432  m  
 1.6  10 19 13.1 8.85  10 14
(c) C   
 

 211.7  8.85  10 14 0.7184  8
W 
  21.162  8
 1.6  10 19

5 10 2 10   15 16
1/ 2

 5  1015  5  10 16

 
1/ 2
5 10  2 10  15 16


 5  10 5  10
15 16
 
  C   6.36  10 9 F/cm 2
 1.576  10 4 cm _______________________________________
or W  1.576  m
Ex 7.6 For a one-sided junction
_______________________________________ 1/ 2
 e s N a 
C   
Ex 7.4  2Vbi  V R  
N N
Vbi  Vt ln a 2 d

 
C  A  C   10 5 C  

 ni  0.105  10 12

  
   
 5  1015 3  10 16   1.6  10 19 11.7  8.85  10 14 N a 
1/ 2

 0.0259 ln   
 10 5
 1.8  10 6
2
  

 23  0.765


 1.173 V
0.105 10   10  2.20 10 N
12 2 5 2 32
a
 2eVbi  V R   N a N d
1/ 2
 So N a  5.01 1015 cm 3
 max   
 s N N 
 a d 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 7
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

N N   3.240  10 5 cm
We have Vbi  Vt ln a 2 d 
 or W  0.3240  m
 ni 
eN d x n
n2 V   max 
Then N d  i exp bi 
 s
 Vt 
1.6 10 10 0.3085 10 
Na 19 16 4


1.5 10 
10 2
 0.765 
exp 

11.7 8.85 10  14

5.01 1015  0.0259 

 4.77  10 4 V/cm
N d  3.02  10 17 cm 3

 4  1015 3  1016
(b) Vbi  0.0259  ln 
 
 
_______________________________________
 1.5  1010 
2

 0.699 V
Test Your Understanding Solutions 
 211.7  8.85  10 14 0.6994
xn  

TYU 7.1  1.6  10 19

  
1/ 2
 2  1017 1016  4  1015  1 
(a) Vbi  0.0259 ln    
 4  1015  3  1016 

 1.5  1010
2
   3  10
16
 
 0.772 V  5.96  10 6 cm
 2  V   N  1 
1/ 2
or x n  0.0596  m
x n   s bi  a  
 e  Nd
 N  N 
 a d  xp  

 211.7  8.85  10 14 0.6994 

 211.7  8.85  10 14 0.7722

  1.6  10 19
1/ 2
 1.6  10 19  3  1016  1 
  
 4  1015  3  1016 
 4  10 
15
 2  1017  1 
1/ 2

  
 2  1017  1016 
 10
16
  4.469  10 5 cm

or x p  0.4469  m
 3.085  10 5 cm
or x n  0.3085  m 
 211.7  8.85  10 14 0.6994
W 

 1.6  10 19
 2  V   N
1/ 2

1/ 2
 1  4  1015  3  1016  
x p   s bi  d  
 N  N  
 e  Na  a d  
 4  10 3  10  
15

16  



 211.7  8.85  10 0.772214
  5.064  10 cm 5

 1.6  10 19 or W  0.5064  m

 1016  
1/ 2
 max 
1.6 10 3 10 5.96 10 
19 16 6

11.7 8.85 10 

1
  
 2  1017  1016  14

 2  10 
17

 2.76  10 4 V/cm
 1.54  10 6 cm _______________________________________
or x p  0.0154  m
TYU 7.2
 2  V   N  N d
1/ 2

W   s bi  a
 e  Na Nd


 Vbi  0.0259  ln 

 5  1016 5  1015  

 211.7  8.85  10 14 0.7722
 1.8  10 6 
2
 
  1.186 V
 1.6  10 19
 2  V   N
1/ 2
 1 
 2  10  10 17 16
 
1/ 2
x n   s bi  a  
 N  N 
  e  Nd  a d 

 2  10 10
17 16
  
 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 7
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________


 213.1 8.85  10 14 1.186
xn  
  
 211.7  8.85  10 14 0.718  8
xn  
 1.6  10 19  
1.6  10 19 
1/ 2 1/ 2
 5  1015  1   5  1016  1 
  
 5  1015  5  1016    
 5  1016  5  1015 
 5  10   5  10 
16 15
 
 5.590  10 6 cm  x n  1.432  10 4 cm
or x n  0.05590  m  
 211.7  8.85  10 14 0.718  8
xp  
 2  V   N 
x p   s bi  d 
1 

1/ 2
 
1.6  10 19 
  
 a  a N d 
e N N 1/ 2
 5  1015  1 
   
xp  

 213.1 8.85  10 14 1.186    5  10
16  5  1015  5  1016
 
 1.6  10 19  x p  1.432  10 5 cm
1/ 2
 5  1016  1  Now
  
 5  1015  5  1016 
 5  10
15
  W  x n  x p  W  1.58  10 4 cm
Also
 5.590  10 5 cm
2Vbi  V R  20.718  8
or x p  0.5590  m  max  
W 1.575  10  4
 2  V   N  N d
1/ 2
  1.11 10 5 V/cm
W   s bi  a 

 e  Na Nd 
(b) For V R  12 V

 213.1 8.85  10 14 1.186 
W 
 1.6  10 19  
 211.7  8.85  10 14 0.718  12 
xn  
1/ 2  1.6  10 19
 5  1015  5  1016  
 1/ 2


 5  10 5  10
15 16
 
 
 5  1016
 


1
 5  1015  5  1016


 5  10 
15

 6.149  10 5 cm
or W  0.6149  m or x n  1.73  10 4 cm

 max 
eN d x n
xp  

 211.7  8.85  10 14 0.718  12 
s  1.6 10 19

 max 
1.6 10 5 10 5.59 10 
19 16 6
 5  1015  
1/ 2

13.18.85 10 
1
14   
 5  1015  5  1016 
 5  10 
16

 3.86  10 4 V/cm
or x p  1.73  10 5 cm
_______________________________________
Also
TYU 7.3 W  x n  x p  1.90  10 4 cm

 5  1016 5  1015
(a) Vbi  0.0259 ln 
  Now
 1.5  1010
2
   20.718  12
 max 
 0.718 V 1.90  10  4
Now for V R  8 V,  1.34  10 5 V/cm
_______________________________________
 2  V  V R   N a
1/ 2
 1 
x n   s bi   
 N  N  N 
e  d  a d 

or
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 7
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

TYU 7.4
 
 3  1016 8  1015
Vbi  0.0259 ln 

 1.5 1010  2
 
 0.717 V
1/ 2
 e s  N a N d 
C  A  
 2Vbi  V R   N a  N d 


 5  10 5    
 1.6  10 19 11.7  8.85  10 14
2Vbi  V R 


   
1/ 2
 3 1016 8  1015
 
 3  10  8  10  
16 15

or
1/ 2
 5.232 10 16 

C  5  10 5   
 Vbi  V R 
(a) For V R  2 V,
1/ 2
 5.232  10 16 

C  5  10 5

 
 0.717  2 
 6.94 10 13 F  0.694 pF
(b) For V R  5 V,
1/ 2
 5.232  10 16 

C  5 10 5   
 0.717  5 
 4.78 10 13 F  0.478 pF
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Chapter 8
Exercise Solutions
n po 
ni2


1.8  10 6 
2

Ex 8.1 Na 8 1015
n po 
n i2


1.5  1010 
2

 4.5  10 3 cm 3  4.05  10 4 cm 3
5  1016
Na
n i2 
1.8 10 6  2

p no 
n

2
i1.5  10  10 2
  1.125  10 4 cm 3
p no 
Nd

2  1016
Nd 2  1016
 1.62 10 4 cm 3
V 

n p  x p  n po  exp a 
 
Jn  xp  
eDn n po   eV a
exp
 
  1
 Vt  Ln   kT  
  0.650 
 4.5  10 3 exp   
  
1.6  10 19 210  4.05  10 4 
 0.0259  4.583  10 3
 3.57  1014 cm 3   1.05  
 exp   1
V 
p n x n   p no exp a    0.0259  
 Vt   
J n  x p  1.20 A/cm 2
  0.650 
 1.125  10 exp 
4
 J p x n  
eD p p no   eVa  
 1
 0.0259  exp
L p   kT  
 8.92  10 14 cm 3
We have that 
  
1.6  10 19 8 1.62  10 4 
 
n p  x p  N a and p n x n   N d 6.325  10  4
so low injection applies.   1.05  
 exp   1
_______________________________________   0.0259  
Ex 8.2 J p x n   0.1325 A/cm 2
 1 The total current density is:
Dp 
J s  en i2 
Dn

1
 
J T  J n  x p  J p x n  
 N a  no Nd  po 
  1.20  0.1325

 1.6 10 19 1.8  10 6  
2
J T  1.33 A/cm 2
 1 
_______________________________________
210 1 8
 7
 
 8  10
15
10 2  10 16 5  10 8  Ex 8.4
J s  3.30  10 A/cm 18 2 In the n-region, for N d  2  1016 cm 3 ,
_______________________________________  n  6000 cm 2 /V-s
J  e n N d  n
Ex 8.3
or
We find
J 1.3325
Ln  D n no n  
e n N d 
1.6  10 19 6000 2  1016   
 21010 7
  4.583 10 3
cm  0.0694 V/cm
L p  D p po In the p-region, for N a  8 1015 cm 3 ,
 p  320 cm 2 /V-cm
 85 10 8   6.325 10 4 cm
J  e p N a  p
or
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

J 1.3325 eni W
p   J gen 
e p N a 1.6 10 3208 10
19 15 2 0
 3.25 V/cm 
1.6 10 1.8 10 2.14110 
19 6 4

_______________________________________ 25  10  8

J gen  6.166  10 10 A/cm 2

Ex 8.5
From Example 8.5, we have 6.166  10 10
J gen
(c)   3.68  10 7
E g  eVa 2 E g  eVa1 Js 1.677  10 17

kT2 kT1 _______________________________________
Let T2  310 K, T1  300 K, E g  1.42 eV,
Ex 8.7
and V a1  1.050 V.
eni2 Dn
Then I Sn  A 
1.42  V a 2 1.42  1.050 Na  no

 1.6 10 1.5 10 
19 10 2
310
which yields
300

 10 3 
25
2  10 15
5  10  7
V a 2  1.0377 V or
so V  1.0377  1.050  0.0123 V I Sn  1.273  10 13 A
or V  12.3 mV per 10 C increase in
temperature. en i2 Dp
I Sp  A 
_______________________________________ Nd  po

 1.6 10 1.5 10 

19 10 2
Ex 8.6
 1

 10 3 
10
Dn 1 Dp  8  10 16 10  7
(a) J s  eni2    or
 N a  n0 Nd  p0 
 I Sp  4.5  10 15 A

 1.6  10 19
1.8 10  6 2
Then
 1 207 1 9.8  I S  I Sn  I Sp  1.318  10 13 A
  
 2  10
15
5  10 8 8  1016 5 10 8  V 
(a) I D  I S exp a 

17
or J s  1.677  10 A/cm 2
 Vt 

 2  1015 8  1016 
(b) Vbi  0.0259 ln  
    0.550 
 1.318  10 13 exp 
 1.8  10
6 2
    0.0259 
 2.2  10 4 A
 1.174 V
 2  V  V R   N a  N d 
1/ 2
  0.610 
(b) I D  1.318  10 13 exp  
W   s bi    0.0259 
  N N 
e  a d   2.23  10 3 A


 213.1 8.85  10 1.174  514
 Now
 1.6  10 19 (a) rd 
Vt

0.0259
 118 
1/ 2 I D 2.2  10  4
 2 1015  8 1016  


 2  10 8 10  
15

16  
 (b) rd 
0.0259
2.23  10 3
 11.6 
or W  2.141 10 4 cm
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

We find TYU 8.2

V  V  eni2 Dn V 
I pO  I Sp exp a  , I nO  I Sn exp a 
 V  (a) I n  A   exp a 
 no 
 Vt   t  Na  Vt 

 1.6 10 1.5 10 

Then 19 10 2

(a) I pO  7.511 10 6 A;  10  3

5  1016
4
I nO  2.125  10 A 25  0.625 
5
  exp 
(b) I pO  7.617  10 A; 5  10 7
 0.0259 
I nO  2.155  10 3 A or I n  1.54  10 4 A  0.154 mA
en i2 Dp V 
We find (b) I p  A   exp a 

Nd  po  Vt 
 1 
C d   
 I pO pO  I nO nO 
 1.6 10 1.5 10 
 19 10 2
 2Vt  
 10 3 
So 11016

(a) C d 
1
20.0259 

7.511 10  6 10  7  
10  0.625 
 exp 
10  7  0.0259 
 2.125  10 5  10 
4 7
or I p  1.09  10 3 A  1.09 mA
or C d  2.07  10 9 F  2.07 nF (c) I Total  I n  I p

(b) C d 
1
20.0259 

7.617  10 5 10  7   1.538  10 4  1.087 10 3
 1.24  10 3 A
 2.155  10 5  10 
3 7
or I Total  1.24 mA
or C d  2.09  10 8 F  20.9 nF _______________________________________
_______________________________________
TYU 8.3
From TYU 8.2, I n  0.154 mA
Now
Test Your Understanding Solutions eD p p no V 
I p  A  exp a 
Wn  Vt 
TYU 8.1
  2 We find
n po 
n i2
Na

1.8  10 6
5  1016
 6.48  10 5 cm 3
p no 
n i2


1.5 1010 
2

 2.25  10 4 cm 3
Nd 1016
p no 
n i2


1.8  10 6 
2

 6.48  10  4 cm 3 Then
5  1015
 1.6 10 102.25 10 
19
Nd

4
I p  10 3 
For V a max  , 2  10 4

V   0.625 
p n x n   p no exp a   exp 
 Vt   0.0259 
so that or I p  5.44 mA
 p x    0.1N d  _______________________________________
V a  Vt ln n n   Vt ln  
 p no   p no 

 0.0259  ln 

 0.1 5  10 15  
4 
 6.48  10 
or V a max   1.067 V
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

TYU 8.4 eni2 Dp

V  I Sp  A 
(a) J  J s exp a  Nd  po

 Vt 
 1.6 10 1.8 10 
19 6 2
 1 Dn 1 Dp  
 10 3 
9.8
J s  en i2    8  1016 10  7
 N a  no Nd  po 
 or I Sp  6.415  10 23 A

 1.6  10 19 1.5  1010  2
So I S  I Sn  I Sp  5.338  10 21 A
 1 25 1 10   0.970 
 7
  (a) I D  5.338  10  21 exp 
 2  10
15
10 8  1016 10  7   0.0259 
J s  2.891 10 10 A/cm 2  9.83  10 5 A
 1.045 
  0.35 
Then J  2.891 10 10 exp   (b) I D  5.338  10  21 exp 
 0.0259 
 0.0259 
 2.137  10 4 A/cm 2  1.78  10 3 A

  
Now
 2  10 15 8  1016 
(b) Vbi  0.0259 ln   (a) rd 
Vt

0.0259
 264 
 1.5  10 10
2
  I D 9.828  10 5
 0.7068 V 0.0259
We find (b) rd   14.6 
1.779  10 3
W 

 211.7  8.85  10 14 0.7068  0.35  We have
 1.6  10 19 V  V 
I pO  I Sp exp a  , I nO  I Sn exp a 
 Vt   Vt 
1/ 2
 2  10 15  8  10 16  


 2  10 8  10
15 16
  
 
We find
(a) I pO  1.181 10 6 A; I nO  9.71 10 5 A
5
 4.865  10 cm
Then (b) I pO  2.137  10 5 A;
en W V  I nO  1.757  10 3 A
J rec  i exp a 

2 o  2Vt  Now


1.6 10 
19

1.5  10 10 4.865  10 5   1
C d  


 I pO pO  I nO nO
 

2 10  7   2Vt 
So
 0.35 
 exp  
 20.0259  (a) C d 
1
20.0259 
  
1.181 10  6 10  7

 9.71 10 5  10 
J rec  5.020  10 4 A/cm 2 5 7
4
J rec 5.020  10
(c)   2.35  9.40  10 10 F  0.940 nF
J 2.137  10  4
_______________________________________ (b) C d 
1
20.0259

2.137  10 5 10  7  
TYU 8.5 
 1.757  10 3 5 10 7

2
I Sn  A 
en i Dn  1.70  10 8 F  17.0 nF
Na  no _______________________________________

 10 
3 1.6 10 1.8 10 
19 6 2
207
2  10 15
5  10  7
or I Sn  5.274  10 21 A
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

TYU 8.6 t2 
exp  t 2  pO  I 
From Figure 5.3, for N d  8  1016 cm 3 , (b) erf   1  0.1 R 
 pO  t 2  pO  IF 
  n  900 cm 2 /V-s
 0.5 
For N a  2  1015 cm 3 ,  1  0.1   1.0286
 1.75 
  p  480 cm 2 /V-s By trial and error
In the n-region, t2
 1.25
  e n N d  pO

 1.6  10 19
9008 10  16
 
 t 2  1.25 10 7  1.25  10 7 s
1
 11.52 (  -cm) _______________________________________
Then
Rn 
l

0.01  0.868 
A 11.5210 3 
In the p-region,
  e p N a
 
 1.6  10 19 480  2  10 15  
1
 0.1536 (  -cm)
Then
Rp 
l

0.01  65.1 
A 0.1536 10 3  
The total resistance is
R  R n  R p  66 
_______________________________________

TYU 8.7
ts IF
(a) erf 
 pO IF  IR
Now
VR 2
IR    0.5 mA
RR 4
So
ts 1.75
erf   0.778
 pO 1.75  0.5

ts
From Appendix G,  0.864
 pO
So that
 
t s  0.864  10 7  0.746  10 7 s
2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 9
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Chapter 9
Exercise Solutions
Ex 9.1 Ex 9.3
 B 0   m    4.55  4.07  0.48 V  2  V  V R  
1/ 2

x n   s bi 
N   4.7  10 17   eN d 
 n  Vt ln c   0.0259 ln 
  5  10 15 
 Nd   

 
 211.7  8.85  10 14 Vbi  V R  
1/ 2

 0.1177 V
Vbi   B 0   n  0.48  0.1177  0.3623 V
 
1.6  10 19 1016  


2 V 
1/ 2 
 1.294  10 9 bi R V  V  1/ 2

x n   s bi  (a) V R  1 V, Vbi  0.334 V

 eN d 
 x n  4.155  10 5 cm


 213.1 8.85  10 0.3623  14
 1/ 2

  

eN d x n
 1.6  10 19 5  1015   max 
s
 3.24  10 5 cm

1.6 10 10 4.155 10 
19 16 5

 max 
eN d x n
11.7 8.85 10  14

s
 6.42  10 4 V/cm

1.6 10 5 10 3.24 10 
19 15 5
e
13.18.85 10  14
Then  
4 s
 2.24  10 4 V/cm
_______________________________________


 1.6  10 19 6.42  10 4    1/ 2

 4 11.7  8.85  10
14 
 
Ex 9.2
  0.0281 V
From Figure 9.3,
Vbi  0.64 V (b) V R  5 V,
2 x n  8.309  10 5 cm
 1 
 
 C  8.5  1012  max 
1.6 10 10 8.309 10 
19 16 5

V R

3  0.64
 2.335  10 12
11.7 8.85 10  14

2 1  1.284 10 5 V/cm

Then N d  
e s  1 
 
2
 
 1.6  10 19 1.284  10 5 
  
 1/ 2

 C   4 11.7  8.85  10 
14 
 
V R   0.0397 V
2 _______________________________________

1.6 10  19
 
13.1 8.85 10 14 2.335 1012  Ex 9.4
3
or N d  4.62  10 cm 18
4 em n k 2
_______________________________________ A 
h3
Assume m n  m o , then

A 
 
4 1.6  10 19 9.1110 31 1.38  10 23  2

6.625 10  34 3

 1.20  10 6 A/K 2 -m 2
 A   120 A/K 2 -cm 2
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 9
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Ex 9.5 p N 
V  eVbi  E  kT ln Po  n 

I  AJ s exp a 

 no
p N P 
 Vt   1015 6  1018
 0.70  0.0259  ln 
   
 I 
so that V a  Vt ln 

 5. 76  1011
7  10 18 
  
 AJ s  or Vbi  0.889 V
For the pn junction: _______________________________________
 10  10  6 
V a  0.0259  ln  4 

 10 3.66  10 
11 
 
 0.5628 V Test Your Understanding Solutions
For the Schottky junction:
TYU 9.1
 10 10  6 
V a  0.0259 ln  4  (a)  Bo  4.5  4.01  0.49 V

 10 5.98  10 
5 
  N 
 0.1922 V (b)  n  Vt ln c 
_______________________________________  Nd 
 2.8  10 19 
Ex 9.6  0.0259  ln 15 
  0.237 V
 3  10 
 V  0.3 
I ST exp a  Vbi   Bo   n  0.49  0.237  0.253 V
   0.3 
 Vt  I
 1  ST exp   2  V  V R  
1/ 2

 Va  IS  Vt  (c) x n   s bi 
I S exp   eN d 
 Vt 
Then 

 211.7  8.85 10 14 0.253  5   1/ 2

 
  0.3 
I S  5  10  7 exp 
 
1.6 10 19 3 1015  
 
 0.0259  or x n  1.505  10 cm 4

12
 I S  4.66  10 A Then
_______________________________________ eN d x n
 max 
s
Ex 9.7

1.6 10 3 10 1.505 10 
19 15 4

11.7 8.85 10 

We have 14
1/ 2
2 V 
x n   s bi  or  max  6.98  10 4 V/cm
 eN d 
1/ 2


 213.1 8.85 10 14 0.80   1/ 2  e s N d 
(d) C    
 2Vbi  V R  


 1.6  10
19
7  1018 

 
 1.287  10 cm 6   
 1.6 10 19 11.7  8.85 10 14 3  1015 
 
  1/ 2

o
 20.253  5 
or x n  128.7 A
_______________________________________ or C   6.88  10 F/cm
9 2

_______________________________________
Ex 9.8
From Example 9.8, E  0.70 eV. TYU 9.2
(a)  Bo  5.12  4.07  1.05 V
We find

p no 
n i2


2.4  1013 
2

 5.76  10 11 cm 3
 4.7  1017 
(b)  n  0.0259 ln 15 
  0.131 V
Nd 1015  3  10 
Now Vbi  1.05  0.131  0.919 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 9
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

(c) x n  

 213.1 8.85  10 14 0.919  5   1/ 2 (b) For the pn junction diode

 
1.6  10 19 3  1015

    10 3 
V a  0.0259 ln 14   0.656 V
4  10 
or x n  1.69  10 cm
For the Schottky diode
Now
 10 3 
 max 
 
1.6  10 19 3  1015 1.69  10 4   V a  0.0259 ln 9   0.358 V
13.1 8.85 10 14    10 
_______________________________________
or  max  7  10 V/cm 4

 
 1.6  10 19 13.1 8.85  10 14
(d) C   
 
 20.919  5


 3 1015 
1/ 2

or C   6.86  10 9 F/cm 2
_______________________________________

TYU 9.3
e
 
4 s


 1.6  10 19 6.98 10 4 

  1/ 2

 4 11.7  8.85  10 
14 
 
or   0.0293 V
e
xm 
16 s 
1/ 2
 1.6  10 19 


16 11.7  8.85  10
14 4 
6.98  10   
o
or x m  2.10  10 7 cm  21.0 A
_______________________________________

TYU 9.4
V 
I  I S exp a 
 Vt 
Then
 I 
V a  Vt ln 
 IS 
(a) For the pn junction diode
 100 10 6 
V a  0.0259 ln 14
  0.596 V

 10 
For the Schottky diode
 100 10 6 
V a  0.0259 ln 9
  0.298 V

 10 