Project 1

TCAD Simulation

SILVACO

Daewon Kim

Assistant Professor
Nano Energy Device Laboratory
Department of Electronic Engineering
Kyung Hee University
 Goals

▪ Plot potential graph and I-V curve in accordance with doping

concentration of silicon
─ Hint: Fix Na = 1020 and change Nd for finding difference

▪ Find the relationship between 'doping concentration' and 'built in

potential, depletion width, current’

▪ Carry out comparative analysis between simulated values and

theoretical values (ex. Vbi)

y=0
Anode Cathode
VAnode p-Si n-Si

y=1
x=0 x=1 x=2

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Codes
go atlas
mesh space.mult=1

# mesh
x.mesh loc=0 spac=0.1
x.mesh loc=1 spac=0.05
x.mesh loc=2 spac=0.1
y.mesh loc=0 spac=0.1
y.mesh loc=1 spac=0.1

# region
region num=1 silicon x.min=0 x.max=1 y.min=0 y.max=1
region num=2 silicon x.min=1 x.max=2 y.min=0 y.max=1

# define the electrodes

electrode name=anode x.min=0 x.max=0.1 y.min=0 y.max=1
electrode name=cathode x.min=1.9 x.max=2 y.min=0 y.max=1

# define the doping concentration

doping uniform conc=1e16 p.type region=1
doping uniform conc=1e16 n.type region=2

# set models
models conmob boltzman print temperature=300
method newton trap
output band.param con.band val.band e.field

solve init
save outf=pnjunction1.str
tonyplot pnjunction1.str
log outf=pnjunc_con1.log
solve vanode= -5 vstep=0.1 name=anode vfinal=3
log off
tonyplot pnjunc_con1.log
quit

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Instruction for Figure Setting

Use right mouse button

Turn on

To get a potential graph, follow as menu > Tools > cutline

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Instruction for Figure Setting

Click

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Instruction for Figure Setting

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Instruction for Figure Setting

Region of Potential
Department of Laboratory for
Electronic Engineering Nano Energy Device
 Instruction for Figure Setting

▪ Menu → Tools → Cutline → Set the position (X, Y) → Creat

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Instruction for Figure Setting (cont’d)

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Result Figures

potential graph in accordance with doping concentration of silicon

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Result Figures (cont’d)

I-V curve in accordance with doping concentration of silicon

Department of Laboratory for

Electronic Engineering Nano Energy Device
 Notice

▪ Students should submit theoretical analysis along with plotted graphs.

▪ License is limited to 40 people only. Hence, students should be

aware of this.

▪ Silvaco can only be accessed using the school`s internal IP.

─ (ex : khu wifi)
─ For security reasons, it cannot be used outside the school.

Department of Laboratory for

Electronic Engineering Nano Energy Device