International Islamic University Islamabad

Faculty of Engineering & Technology

Department of Electrical Engineering

ELECTRONIC CIRCUIT DESIGN-I LAB (EE202L)

Experiment No. 2: Series and Parallel Diode Configurations

Name of Student: ……………………………………

Registration No.: ……………………………………..

Date of Experiment: …………………………………

Submitted To: ………………………………………,..

Experiment No. 2: Series and Parallel Diode Configurations Page 1

Objectives:
 To develop the ability to analyze electronic networks with diodes connected in a series or
parallel configuration.
 To obtain the circuit voltages of various diode circuits
Equipment Required:
 DMM
 DC Power Supply: +5V (fixed);
 Resistors: 1-kΩ [Qty =2] ; 2.2-kΩ [Qty =2];
 Silicon Diodes: 1N4007 [Qty =2];
 Connecting wires
Theory:
The analysis of circuits with diodes and a DC input requires that the state of the diodes
first be determined. For silicon diodes (with a transition voltage or “firing potential” of 0.7V),
the voltage across the diode must be at least 0.7 V with the polarity appearing in Figure 2.1(a) for
the diode to be in the “ON” state. Once the voltage across the diode reaches 0.7 V the diode will
turn “ON” and have the equivalent of Figure 2.1(b). For VD < 0.7V or for voltages with the
opposite polarity of Figure 2.1(a), the diode can be approximated as an open circuit. For
germanium diodes, simply replace the transition voltage by the germanium value of 0.3V.
In most networks, where the applied DC voltage exceeds the transition voltage of the
diodes, the state of the diode can usually be determined simply by mentally replacing the diode
by a resistor and determining the direction of current through the resistor. If the direction
matches the arrowhead of the diode symbol, the diode is in the “ON” state, and if the opposite, it
is in the “OFF” state. Once the state is determined, simply replace the diode by the transition
voltage or open circuit and analyze the rest of the network.

Figure 2.1(a) Figure 2.1(b)

Experiment No. 2: Series and Parallel Diode Configurations Page 2

 Be continually alert to the location of the output voltage Vo = VR = IR * R. This is

particularly helpful in situations where a diode is in an open-circuit condition and the current is

zero. For IR = 0; Vo = VR = IR * R = 0 * R = 0V. In addition, recall that an open circuit can

have a voltage across it, but the current is zero. Further, a short circuit has a zero-volt drop across
it, but the current is limited only by the external network or limitations of the diode.
The analysis of logic gates requires that one make an assumption about the state of the
diodes, determine the various voltage levels, and then determine whether the results violate any

basic laws, such as the fact that a point in a network (such as Vo) can have only one voltage

level. It is usually helpful to keep in mind that there must be a forward bias voltage across a

diode equal to the transition voltage to turn it “ON”. Once Vo is determined and no laws are

violated with the diodes in their assumed state, a solution to the configuration can be assumed.
Procedure:
Part 1: Threshold Voltage
For both the silicon diodes, determine the threshold using the diode checking capability of
the DMM or a curve tracer. For this experiment the “firing voltages” obtained will establish the

equivalent characteristics for each diode. Record the value of VT obtained for each diode. If the

diode checking capability or curve tracer is unavailable, assume VT = 0.7V for silicon diode.

VT1 (measured) =____________

VT2 (measured) =____________
Part 2: Series Configurations
a. Construct the circuit of Figure 2.2. Record the measured value of R.
R (measured) =____________

Figure 2.2

Experiment No. 2: Series and Parallel Diode Configurations Page 3

b. Using the results of Part 1 and the measured resistance for R, calculate the theoretical values

of Vo and ID. Insert the level of VT for VD.

VD (calculated) = ______________

Vo (calculated) = ______________
Vo (calculated)
ID (calculated) = =______________
R (calculated)

c. Measure the voltage VD and Vo using DMM. Find out ID from measured values. Compare

with the results of step 2(b).

VD (measured) = ______________

Vo (measured) = ______________
Vo (measured)
ID (measured) = =______________
R (measured)

d. Construct the circuit of Figure 2.3. Record the measured values of each resistor.

Figure 2.3
R1 (measured) =____________

R2 (measured) =____________

e. Using the results of Part 1 and the measured resistance values R1 and R2, calculate the

theoretical values of Vo and ID. Insert the level of VT for VD.

VD (calculated) = ______________

Vo (calculated) = ______________

Experiment No. 2: Series and Parallel Diode Configurations Page 4

 Vo (calculated)
ID (calculated) = =______________
R (calculated)

f. Measure the voltages VD and Vo using the DMM. Find out ID from measured values.

Compare with the results of step 2(e).

VD (measured) = ______________

Vo (measured) = ______________
Vo (measured)
ID (measured) = =______________
R (measured)

g. Reverse the silicon diode in Figure 2.3 and calculate the theoretical values of VD, Vo and ID.

VD (calculated) = ______________

Vo (calculated) = ______________
Vo (calculated)
ID (calculated) = =______________
R (calculated)

h. Measure VD and Vo for the conditions of step 2(g) using DMM. Find out current ID from

measured values. Compare with the results of step 2(g).

VD (measured) = ______________

Vo (measured) = ______________
Vo (measured)
ID (measured) = =______________
R (measured)

i. Construct the network of Figure 2.4. Record the measured value of R.

Figure 2.4
R (measured) =____________

Experiment No. 2: Series and Parallel Diode Configurations Page 5

j. Using the results of Part 1, calculate the theoretical values of V1, Vo and ID.

V1 (calculated) = ______________

Vo (calculated) = ______________
Vo (calculated)
ID (calculated) = =______________
R (calculated)

k. Measure the V1 & Vo using DMM. Find out ID from measured values and compare with the
results of step 2(j).
V1 (measured) = ______________

Vo (measured) = ______________
Vo (measured)
ID (measured) = =______________
R (measured)

Part 3: Parallel Configurations

a. Construct the network of Figure 2.5. Record the measured value of R.

Figure 2.5
R (measured) =___________

b. Using the results of Part 1, calculate the theoretical values of Vo and VR.

VR (calculated) = ______________

Vo (calculated) = ______________

c. Measure Vo and VR using DMM and compare with the results of step 3(b).

VR (measured) = ______________
Vo (measured) = ______________

Experiment No. 2: Series and Parallel Diode Configurations Page 6

d. Construct the network of Figure 2.6. Record the measured value of each resistor.

Figure 2.6
R1 (measured) =__________
R2 (measured) =__________
e. Using the results of Part 1, calculate the theoretical values of Vo, VR1 and ID.

Vo (calculated) = _____________

VR1 (calculated) = _____________

ID (calculated) = _____________

f. Measure Vo and VR1 using DMM. Find out ID using measured values. Compare with the

results of step 3(e).

Vo (measured) = _____________

VR1 (measured) = _____________

ID (measured) = _____________
g. Construct the network of Figure 2.7. Record the measured value of the resistor.

Figure 2.7
R (measured) =____________

Experiment No. 2: Series and Parallel Diode Configurations Page 7

h. Using the results of Part 1, calculate the theoretical values of Vo and VR.

Vo (calculated) = _____________

VR (calculated) = _____________

i. Measure Vo and VR using DMM and compare with the results of step 3(h).

Vo (measured) = _____________

VR (measured) = _____________

Part 4: Positive Logic AND Gate

a. Construct the network of Figure 2.8. Record the measured value of the resistor.

Figure 2.8
R (measured) =___________

b. Apply 5V to each input terminal (V1 & V2) of Figure 2.8 and calculate the theoretical value

of Vo using results of Part 1.

Vo (calculated) = ______________

c. Measure Vo using DMM and compare to the results of step 4(b).

Vo (measured) = ______________

d. Set both inputs (V1 & V2) to zero of Figure 2.8 (by connecting both inputs to circuit ground)

and calculate the theoretical value of Vo.

Vo (calculated) = ______________

Experiment No. 2: Series and Parallel Diode Configurations Page 8

e. Measure Vo using DMM and compare to the results of step 4(d).

Vo (measured) = ______________

f. Set V1 = 5V & V2 = 0V of Figure 2.8 and calculate the theoretical value of Vo.

Vo (calculated) = ______________

g. Measure Vo using DMM and compare to the results of step 4(f).

Vo (measured) = ______________

Part 5: Bridge Configuration

a. Construct the network of Figure 2.9. Record the measured value of each resistor.

Figure 2.9
R1 (measured) =___________

R2 (measured) =___________

R3 (measured) =___________

b. Using the VT of Part 1, calculate the theoretical values of Vo and VR2.

Vo (calculated) = _____________

VR2 (calculated) = _____________

c. Measure Vo and VR2 using DMM and compare to the results of step 5(b).

(Note: Use a low voltage scale of DMM while measuring Vo)

Experiment No. 2: Series and Parallel Diode Configurations Page 9

 Vo (measured) = _____________

VR2 (measured) = _____________

Part 6: Practical Exercise

a. If the diode (D2) of Figure 2.9 was damaged, creating an internal open-circuit; calculate the

resulting levels of Vo and VR2.

Vo (calculated) = _____________

VR2 (calculated) = _____________

b. Remove the top right diode (D2) from Figure 2.9. Measure Vo and VR2 using DMM.

Compare the results with those predicted in step 6(a).

Vo (measured) = _____________

VR2 (measured) = _____________

Experiment No. 2: Series and Parallel Diode Configurations Page 10