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N N N N-Channel - Channel - Channel - Channel Enhancement-Mode Enhancement-Mode Enhancement-Mode Enhancement-Mode MOS MOS MOS Mos Fets Fets Fets Fets
N N N N-Channel - Channel - Channel - Channel Enhancement-Mode Enhancement-Mode Enhancement-Mode Enhancement-Mode MOS MOS MOS Mos Fets Fets Fets Fets
N N N N-Channel - Channel - Channel - Channel Enhancement-Mode Enhancement-Mode Enhancement-Mode Enhancement-Mode MOS MOS MOS Mos Fets Fets Fets Fets
Drain-Source Voltage
BVDSS 20 V
漏極-源極電壓
Gate- Source Voltage
VGS +10 V
栅極-源極電壓
Drain Current (continuous)
ID 3.5 A
漏極電流-連續
Drain Current (pulsed)
I DM 11 A
漏極電流-脉冲
Total Device Dissipation
總耗散功率 PD 1000 mW
T A =25℃環境溫度爲 25℃
Junction 結溫 TJ 150 ℃
■DIMENSION 外形封裝尺寸
單位(UNIT):mm