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  • Unit 4: Transmission Theory of The MOSFET: Landauer at Low and High Bias

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    Iqra Farhan
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    1) At low bias, the Landauer approach models the MOSFET current using a "Fermi window" function that depends on the small voltage difference. This leads to a linear I-V characteristic. 2) At high bias, the Fermi windows in the contacts fully overlap, leading to current saturation as the transmission probability reaches its maximum value. 3) The document discusses quantized conductance measurements on ballistic devices that agree with predictions from the Landauer approach in both the linear and saturation regions.

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    ECEPurdue-MOSFET-Lundstrom-L4.2

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    1) At low bias, the Landauer approach models the MOSFET current using a "Fermi window" function that depends on the small voltage difference. This leads to a linear I-V characteristic. 2) At high bias, the Fermi windows in the contacts fully overlap, leading to current saturation as the transmission probability reaches its maximum value. 3) The document discusses quantized conductance measurements on ballistic devices that agree with predictions from the Landauer approach in both the linear and saturation regions.

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    32 views18 pages

    Unit 4: Transmission Theory of The MOSFET: Landauer at Low and High Bias

    Uploaded by

    Iqra Farhan
    1) At low bias, the Landauer approach models the MOSFET current using a "Fermi window" function that depends on the small voltage difference. This leads to a linear I-V characteristic. 2) At high bias, the Fermi windows in the contacts fully overlap, leading to current saturation as the transmission probability reaches its maximum value. 3) The document discusses quantized conductance measurements on ballistic devices that agree with predictions from the Landauer approach in both the linear and saturation regions.

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    of 18

    Essentials of MOSFETs

    Unit 4:
    Transmission Theory of the MOSFET

    Lecture 4.2:
    Landauer at Low and High Bias
    Mark Lundstrom
    lundstro@purdue.edu
    Electrical and Computer Engineering
    Purdue University
    West Lafayette, Indiana USA

    Lundstrom: 2018 1
    Low and high bias Landauer expressions

    Lundstrom: 2018
    2
    1) Low bias

    Fermi window

    Lundstrom: 2018 3
    Fermi window: Low bias

    “Fermi window”

    (window function)

    Lundstrom: 2018 4
    Current for a small voltage difference

    device

    Lundstrom: 2018 5
    Small bias conductance

    (ballistic) (T ≈ 0 K)

    Lundstrom: 2018 6
    Quantized conductance

    quantized
    conductance

    D. Holcomb, American J. Physics, 67, pp. 278-297 1999.


    Data from: B. J. van Wees, et al., Phys. Rev. Lett. 60, 848851, 1988.
    Lundstrom: 2018 7
    1) Linear Current in the Landauer Approach

    8
    Lundstrom: 2018
    Aside: Bulk semiconductors

    Before we consider the high bias case, let’s consider a


    bulk semiconductor (many MFP’s long in both directions).
    L

    Contact 1 W Contact 2

    2D conductor

    9
    Lundstrom: 2018
    Conductivity (bulk)

    diffusive

    2D

    Lundstrom: 2018 10
    Sheet conductivity

    (non-degenerate)

    Lundstrom: 2018 11
    Sheet conductivity

    uni-directional thermal
    velocity (non-degenerate)

    (Einstein relation)
    Lundstrom: 2018 12
    2) Saturation Current in the Landauer Approach

    13
    Lundstrom: 2018
    Current for a large voltage difference

    device

    Lundstrom: 2018 14
    How current flows

    Contact 1
    “Fermi window”

    Contact 2
    Lundstrom: 2018
    15
    Current in the Landauer Approach

    16
    Lundstrom: 2018
    Summary

    1) Linear region:

    2) Saturation region:

    Lundstrom: 2018 17
    Next topic

    device

    1) Ballistic MOSFET 2) MOS electrostatics


    Lundstrom: 2018 18

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