2SA1225

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1225
Power Amplifier Applications
Unit: mm
Driver Stage Amplifier Applications

· High transition frequency: fT = 100 MHz (typ.)

· Complementary to 2SC2983

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −160 V

Collector-emitter voltage VCEO −160 V
Emitter-base voltage VEBO −5 V
Collector current IC −1.5 A
Base current IB −0.3 A

Collector power Ta = 25°C 1.0

PC W
dissipation Tc = 25°C 15
Junction temperature Tj 150 °C
JEDEC ―
Storage temperature range Tstg −55 to 150 °C
JEITA ―
TOSHIBA 2-7B1A

Weight: 0.36 g (typ.)

JEDEC ―
JEITA ―
TOSHIBA 2-7J1A

Weight: 0.36 g (typ.)

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 2SA1225
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −160 V, IE = 0 ― ― −1.0 µA

Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1.0 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −160 ― ― V
Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −5 ― ― V
hFE
DC current gain VCE = −5 V, IC = −100 mA 70 ― 240
(Note)
Collector emitter saturation voltage VCE (sat) IC = −500 mA, IB = −50 mA ― ― −1.5 V
Base-emitter voltage VBE VCE = −5 V, IC = −500 mA ― ― −1.0 V
Transition frequency fT VCE = −10 V, IC = −100 mA ― 100 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 30 ― pF

Note: hFE classification O: 70 to 140, Y: 120 to 240

Marking

A1225 Product No.

Lot No.

hFE Classification

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

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 2SA1225

IC – VCE hFE – IC
−1.0 500
Common emitter
Common emitter 300
−20 −10 −8 VCE = −5 V

hFE
Tc = 25°C Tc = 100°C
−0.8
(A)

−6

DC current gain
100 25
−25
IC

−0.6 50
Collector current

−4 30

−0.4
10
IB = −2 mA −0.003 −0.01 −0.03 −0.1 −0.3 −1

−0.2 Collector current IC (A)

0
0
0 −2 −4 −6 −8 −10 −12 −14

Collector-emitter voltage VCE (V)

VCE (sat) – IC fT – IC
−3 300
Collector-emitter saturation voltage

(MHz)

Common emitter Common emitter

IC/IE = 10 VCE = −10 V

−1 Tc = 25°C
fT
VCE (sat) (V)

100
Transition frequency

−0.5
Tc = 100°C
−0.3 50

25
30
−25
−0.1

−0.05 10
−0.003 −0.01 −0.03 −0.1 −0.3 −1 −5 −10 −30 −100 −300 −1000

Collector current IC (A) Collector current IC (mA)

Safe Operating Area

−5 PC – Ta
IC max (pulse)*
−3 1 ms* 24
(1) Tc = Ta Infinite heat sink
IC max (continuous)
(2) Ceramic substrate
PC (W)

20 50 × 50 × 0.8 mm
−1
(A)

10 ms* (3) No heat sink

−0.5
IC

16 (1)
Collector power dissipation

−0.3 DC operation
Collector current

Tc = 25°C
12
−0.1

−0.05 8
*: Single nonrepetitive
−0.03
pulse Tc = 25°C
Curves must be derated 4 (2)
−0.01 linearly with increase in VCEO max
(3)
temperature.
−0.005 0
−0.3 −1 −3 −10 −30 −100 −300 0 20 40 60 80 100 120 140 160

Collector-emitter voltage VCE (V) Ambient temperature Ta (°C)

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 2SA1225

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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