IKP04N60T

TrenchStop Series q

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs G
• Designed for : E
- Frequency Converters
- Drives
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution P-TO-220-3-1
(TO-220AB)
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code

IKP04N60T 600 V 4A 1.5 V 175 °C K04T60 TO-220 Q67040S4714
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax IC A
TC = 25°C 8
TC = 100°C 4
Pulsed collector current, tp limited by Tjmax ICpuls 12
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 12
Diode forward current, limited by Tjmax IF
TC = 25°C 4
TC = 100°C 8
Diode pulsed current, tp limited by Tjmax IFpuls 12
Gate-emitter voltage VGE ±20 V
1)
Short circuit withstand time tSC 5 µs
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C Ptot 42 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC TO-220-3-1 3.5 K/W
junction – case
Diode thermal resistance, RthJCD TO-220-3-1 5
junction – case
Thermal resistance, RthJA TO-220-3-1 62
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15V, I C = 4A
T j = 25° C - 1.5 2.05
T j = 17 5° C - 1.9 -
Diode forward voltage VF V G E = 0V, I F = 4A
T j = 25° C - 1.65 2.05
T j = 17 5° C - 1.6 -
Gate-emitter threshold voltage VGE(th) I C = 60µA,V C E =V G E 4.1 4.9 5.7
Zero gate voltage collector current ICES V C E = 600V , µA
V G E = 0V
T j = 25° C - - 40
T j = 17 5° C - - 1000
Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA
Transconductance gfs V C E = 20V, I C = 4A - 2.2 - S
Integrated gate resistor RGint - Ω

Dynamic Characteristic
Input capacitance Ciss V C E = 25V, - 252 - pF
Output capacitance Coss V G E = 0V, - 20 -
Reverse transfer capacitance Crss f= 1 M Hz - 7.5 -
Gate charge QGate V C C = 4 80V, I C = 4A - 27 - nC
V G E = 1 5V
Internal emitter inductance LE T O -220-3- 1 - 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1) IC(SC) V G E = 1 5V,t S C ≤5µs - 36 - A
V C C = 400V,
T j ≤ 150° C

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 2 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25° C, - 14 - ns
Rise time tr V C C = 4 00V, I C = 4A , - 7 -
V G E = 0/ 1 5V ,
Turn-off delay time td(off) R G = 47 Ω, - 164 -
Fall time tf L σ 1 ) = 150nH, - 43 -
Turn-on energy Eon C σ 1 ) =47pF - 61 - µJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 84 -
Total switching energy Ets reverse recovery. - 145 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j = 25° C, - 28 - ns
Diode reverse recovery charge Qrr V R = 4 00V, I F = 4A, - 79 - nC
Diode peak reverse recovery current Irrm di F / dt = 61 0A / µs - 5.3 - A
Diode peak rate of fall of reverse di r r / d t - 346 - A/µs
recovery current during t b

Switching Characteristic, Inductive Load, at Tj=175 °C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 17 5° C, - 14 - ns
Rise time tr V C C = 4 00V, I C = 4A , - 10 -
V G E = 0/ 1 5V ,
Turn-off delay time td(off) R G = 47 Ω - 185 -
Fall time tf L σ 1 ) = 150nH, - 83 -
Turn-on energy Eon C σ 1 ) =47pF - 99 - µJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 97 -
Total switching energy Ets reverse recovery. - 196 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j = 17 5° C - 95 - ns
Diode reverse recovery charge Qrr V R = 4 00V, I F = 4A, - 291 - nC
Diode peak reverse recovery current Irrm di F / dt = 61 0A / µs - 6.6 - A
Diode peak rate of fall of reverse di r r / d t - 253 - A/µs
recovery current during t b

1)
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 3 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q

tp=2µs
10A
12A

10A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10µs
T C =80°C
8A
T C =110°C 1A
6A
50µs

4A Ic

2A 1ms
Ic 0.1A DC
10ms
0A
10H z 100H z 1kH z 10kH z 100kH z 1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤175°C;
(Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE=15V)
VGE = 0/+15V, RG = 47Ω)

40W 8A
IC, COLLECTOR CURRENT
POWER DISSIPATION

30W 6A

20W 4A
Ptot,

10W 2A

0A
0W
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj ≤ 175°C) (VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors 4 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q
10A 10A

V GE =20V V GE =20V
8A 8A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V 15V
13V 13V
6A 6A
11V 11V
9V 9V
4A 7V 4A 7V

2A 2A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

2.5V IC =8A
8A
IC, COLLECTOR CURRENT

2.0V
6A

1.5V IC =4A

4A
1.0V IC =2A

2A T J = 1 7 5 °C
0.5V
2 5 °C

0A 0.0V
0V 2V 4V 6V 8V 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)

Power Semiconductors 5 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q

t d(off) t d(off)

100ns
t, SWITCHING TIMES

t, SWITCHING TIMES
tf 100ns

t d(on) tf

10ns

t d(on)

tr
10ns
tr
1ns

0A 2A 4A 6A 50Ω 100Ω 150Ω 200Ω 250Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω, VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

7V

t d(off)
6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

m ax.
100ns
typ.
5V
tf
t, SWITCHING TIMES

4V m in.

3V

t d(on)
2V

10ns 1V
tr

0V
25°C 50°C 75°C 100°C 125°C 150°C -50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 60 µA)
VGE = 0/15V, IC = 4A, RG=47Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 6 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q
*) E on and E ts include losses
*) E on a nd E ts in clu d e los s e s
due to diode recovery
d ue to diode re co ve ry E ts*
E ts * 0.4 mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

0.3m J

E off 0.3 mJ E off

0.2m J
0.2 mJ

E on * E on*
0.1m J
0.1 mJ

0.0m J 0.0 mJ
0A 2A 4A 6A 25Ω 50Ω 100Ω 150Ω 200Ω 250Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω, VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) E on and E ts include losses *) E on and E ts include losses

175µJ due to diode recovery due to diode recovery
0.25m J
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

150µJ

E ts * 0.20m J
125µJ
E ts *
100µJ 0.15m J
E off
75µJ
0.10m J E off
50µJ E on*

0.05m J
25µJ E on *

0µJ 0.00m J
25°C 50°C 75°C 100°C 125°C 150°C 300V 350V 400V 450V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 4A, RG = 47Ω, VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q

C iss
VGE, GATE-EMITTER VOLTAGE

1 5V 1 20V

c, CAPACITANCE
100pF
4 80V

1 0V

C oss
5V

10pF
C rss

0V 0V 10V 20V 30V 40V 50V 60V 70V

0nC 5 nC 10n C 1 5nC 20 nC 25 nC 3 0nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=4 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

12µs
IC(sc), short circuit COLLECTOR CURRENT

60A
SHORT CIRCUIT WITHSTAND TIME

10µs
50A
8µs
40A
6µs
30A
4µs
20A

2µs
tSC,

10A

0µs
0A 10V 11V 12V 13V 14V
12V 14V 16V 18V

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=600V, start at TJ=25°C,
(VCE ≤ 400V, Tj ≤ 150°C) TJmax<150°C)

Power Semiconductors 8 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q

D=0.5 D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

0
10 K/W
0.2 0.2
R,(K/W) τ, (s) 0 R,(K/W) τ, (s)
0.38216 5.16*10
-2 10 K/W -2
-3 0.29183 7.018*10 6
0.1 0.68326 7.818*10 0.1 0.79081 1.114*10
-2
-4
1.49884 9*10 1.86970 1.236*10
-3
-4
0.93550 1.134*10 2.04756 2.101*10
-4
R1 R2 0.05 R1 R2
0.05

-1 0.02
10 K/W C1= τ1/R1 C2=τ2/R2 C1= τ1/R1 C2= τ2/R2
0.01 -1 0.02
10 K/W
single pulse
0.01
single pulse

1µs 10µs 100µs 1ms 10ms 100ms 1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance Figure 22. Diode transient thermal
(D = tp / T) impedance as a function of pulse
width
(D=tP/T)

280ns 0.35µC
T J =175°C
Qrr, REVERSE RECOVERY CHARGE

240ns 0.30µC
trr, REVERSE RECOVERY TIME

200ns TJ=175°C 0.25µC

160ns 0.20µC

0.15µC T J =25°C
120ns

80ns 0.10µC
TJ=25°C
0.05µC
40ns

0.00µC
0ns 400A/µs 600A/µs
400A/µs 600A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, IF=4A, slope
Dynamic test circuit in Figure E) (VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)

Power Semiconductors 9 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q

T J =175°C T J=175°C
10A

OF REVERSE RECOVERY CURRENT

REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL

-300A/µs

8A

T J=25°C
6A -200A/µs

T J =25°C
4A
-100A/µs

2A
Irr,

0A 0A/µs
400A/µs 600A/µs
400A/µs 600A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR = 400V, IF = 4A, (VR=400V, IF=4A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

10A I F =8A
2.0V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT

8A
1.5V 4A

6A
2A
1.0V
T J =25°C
4A
175°C
0.5V
2A

0A 0.0V
0V 1V 2V 0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

Power Semiconductors 10 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q
TO-220AB Dimensions
symbol [mm] [inch]
min max min max
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.7 0.1398 0.1457
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M 2.54 typ. 0.1 typ.
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071

Power Semiconductors 11 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH
and Stray capacity C σ =40pF.

Power Semiconductors 12 Rev. 2.2 Dec-04

 IKP04N60T
TrenchStop Series q
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Power Semiconductors 13 Rev. 2.2 Dec-04