Palestine Technical University

Experiment Name
Rectifier Diodes
Experiment No.
(1)

Student Name
Ammar Melaz Awwad

University ID
21110740

Lab partners:

Date

14/8/2013

Submitted to Eng
‫ عال القاسم‬.‫م‬

Electronics 1 Lab
  Introduction
Diodes us a semi-conductor material (device) with single Pn-Junction that conduct current in only
one direction
Pn-junction

- +
Cathode Anode

 Objectives

 To know the act of Forward and Reveres Rectifier Diodes ( the effect of the P-N
junction in diodes) .
 To know the Characteristic Curve for diodes of different Semi-conductor material

 Equipments used
 Kit
 Jumpers
 Diodes
 Resistors
 Oscilloscope
 Multi-meter
 Wires.

 Procedure
1. We connect the circuit as it shown in the fig. 1 bellow and then we connect the
diode in forward then in reverse and then measure the current in both circuits.
2. We connect the circuit as it shown in the fig. 2 bellow and we see the characteristic
curve for diodes of semiconductor materials.

Electronics 1 Lab
  Experiments

IF

V 1 V 2 U F
30..0U
= °

Fig. 1

0.75 0.7 0.65 0.6 0.5 0.4 0.3 0.2 0.1 0 ]VU[ F

40.6 13.40 4.94 1.62 0.256 0.006 0 0 0 0 ]mA [I F

30 25 20 15 10 5 2.5 0 ]VU[ R

2 2 1 1 0 0 0 0 ]µA [I R

Electronics 1 Lab
 Y 330Ω R
=

X 6V V
= pp G

)sine(

F=50 Hz
V 1

Fig. 2

Electronics 1 Lab
  Questions

1 : How do the characteristic data of the individual diodes basically differ?

Silicon Diode : 0.7 V

Germanium Diode : 0.4 V

2: Approximately how large are the internal differential resistances of the individual
diodes with a voltage change of 1.5 .. 4.5 mA ?

Silicon Diode :
∆UF 0.7−0.6
R Di ff = = =33.33 Ω
∆ I F (4.5−1.5)× 10−3

Germanium Diode :
∆UF 0.6−0.45
R Di ff = = =16.67 Ω
∆ I F (4.5−1.5)× 10−3

 Conclusions

 The Rectifier diodes is act like short circuit when it’s in forward bias,
and its act like open circuit when the diode in reverse bias.
 The threshold voltage change when we change the kind of the material
which the diode made of , for example The threshold voltage of the
Silicon diode is 0.7 v and of the germanium diode is 0.4 v .
 R Di ff =∆U F /∆ I F

Electronics 1 Lab