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    Bipolar Junction Transistor: Sneha Weakey Assistant Professor Electronics and Telecommunication Department

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    Pulkit Chaudhari
    The document discusses the bipolar junction transistor (BJT). It describes the history of the BJT, with the first transistor demonstrated in 1947 at Bell Labs by Shockley, Brattain, and Bardeen. It provides advantages of BJTs over vacuum tubes, including being smaller, more efficient, and requiring lower operating voltages. The construction and modes of operation, including cutoff, saturation, forward active, and inverse active modes are covered at a high level. Current flow in the active mode and the components of collector current are also summarized.

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    Bipolar Junction Transistor: Sneha Weakey Assistant Professor Electronics and Telecommunication Department

    Uploaded by

    Pulkit Chaudhari
    11 views8 pages
    The document discusses the bipolar junction transistor (BJT). It describes the history of the BJT, with the first transistor demonstrated in 1947 at Bell Labs by Shockley, Brattain, and Bardeen. It provides advantages of BJTs over vacuum tubes, including being smaller, more efficient, and requiring lower operating voltages. The construction and modes of operation, including cutoff, saturation, forward active, and inverse active modes are covered at a high level. Current flow in the active mode and the components of collector current are also summarized.

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    BJT PPT

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    The document discusses the bipolar junction transistor (BJT). It describes the history of the BJT, with the first transistor demonstrated in 1947 at Bell Labs by Shockley, Brattain, and Bardeen. It provides advantages of BJTs over vacuum tubes, including being smaller, more efficient, and requiring lower operating voltages. The construction and modes of operation, including cutoff, saturation, forward active, and inverse active modes are covered at a high level. Current flow in the active mode and the components of collector current are also summarized.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    11 views8 pages

    Bipolar Junction Transistor: Sneha Weakey Assistant Professor Electronics and Telecommunication Department

    Uploaded by

    Pulkit Chaudhari
    The document discusses the bipolar junction transistor (BJT). It describes the history of the BJT, with the first transistor demonstrated in 1947 at Bell Labs by Shockley, Brattain, and Bardeen. It provides advantages of BJTs over vacuum tubes, including being smaller, more efficient, and requiring lower operating voltages. The construction and modes of operation, including cutoff, saturation, forward active, and inverse active modes are covered at a high level. Current flow in the active mode and the components of collector current are also summarized.

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    of 8

    BIPOLAR JUNCTION

    TRANSISTOR

    SNEHA WEAKEY
    Assistant Professor
    Electronics and Telecommunication Department
    HISTORY OF BJT

    • Before transistor vacuum tubes were used


    widely.

    • On December 23, 1947, amplifying action of


    the first transistor at the Bell Telephone
    Laboratories was demonstrated.

    • By Dr. S. William Shockley, Walter H.


    Brattain, and John Bardeen.

    8/11/2020 2
    Advantages of BJT over Tube Devices

    • It was smaller and lightweight


    • It had no heater requirement or heater loss
    • It had a rugged construction
    • It was more efficient since less power was absorbed by the device
    itself
    • It was instantly available for use, requiring no warm-up period
    • lower operating voltages were possible.

    8/11/2020 3
    CONSTRUCTION OF BJT

    8/11/2020 4
    CONSTRUCTION OF BJT CONTD..

    8/11/2020 5
    MODES OF OPERATION OF BJT

    MODE JE JC PROPERTY APPLICATI


    ON
    Cut-off Mode RB RB Very high internal OFF switch
    resistance
    Saturation Mode FB FB Very low internal ON switch
    resistance
    Active or Forward FB RB Excellent Transistor Amplifier
    Active Mode Action
    Inverse Active Mode RB FB Worst Transistor Attenuator
    Action

    8/11/2020 6
    FLOW OF CURRENT IN ACTIVE MODE

    Similar to forward biased diode Similar to reverse biased diode

    8/11/2020 7
    FLOW OF CURRENT IN ACTIVE MODE CONTD…

    The widths of the depletion regions, indicating clearly


    which junction is forward-biased and which is
    reverse-biased.
    Considering Transistor as a node, we obtain

    The collector current, however, comprises two


    components—the majority and the minority carriers

    Ico- leakage current

    8/11/2020 8

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