SSM07N70CP,R-A

N-channel Enhancement-mode Power MOSFET

Dynamic dv/dt rating BVDSS 675V

D
Repetitive Avalanche Rated R DS(ON) 1.2Ω
Fast Switching I D 7A
Simple Drive Requirement G
S

DESCRIPTION
The SSM07N70C series is specially designed as a main switching device
for universal 90~265VAC off-line AC/DC converter applications.
Both TO-220 and TO-262 type provide high blocking voltage to overcome G
D TO-220 (P)
voltage surge and sag in the toughest power system with the best S
combination of fast switching,ruggedized design and cost-effectiveness.

The TO-220 and TO-262 packages are widely preferred for all commercial
and industrial applications. The device is well suited for switch-mode
power supplies, AC-DC converters and high-current high-speed switching
circuits. G
D
S TO-262 (R)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Rating Units
VDS Drain-Source Voltage 675 V
VGS Gate-Source Voltage ± 30 V
ID @ TC=25°C Continuous Drain Current, VGS @ 10V 7 A
ID @ TC=100°C Continuous Drain Current, VGS @ 10V 4.4 A
1
IDM Pulsed Drain Current 18 A
PD @ TC=25°C Total Power Dissipation 89 W
Linear Derating Factor 0.7 W/°C
2
EAS Single Pulse Avalanche Energy 140 mJ
IAR Avalanche Current 7 A
EAR Repetitive Avalanche Energy 7 mJ
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

THERMAL DATA
Symbol Parameter Value Unit
Rthj-c Thermal Resistance Junction-case Max. 1.4 °C/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 °C/W

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 SSM07N70CP,R-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 675 - - V
∆ BV DSS/∆ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.6 - V/°C
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A - - 1.2 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=3.5A - 4.5 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=675V, VGS=0V - - 10 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS= ± 30V - - ±100 nA
3
Qg Total Gate Charge ID=7A - 32 - nC
Qgs Gate-Source Charge VDS=480V - 8.6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 9 - nC
3
td(on) Turn-on Delay Time VDD=300V - 17 - ns
tr Rise Time ID=7A - 15 - ns
td(off) Turn-off Delay Time RG=10Ω, VGS=10V - 35 - ns
tf Fall Time RD=43Ω - 18 - ns
Ciss Input Capacitance VGS=0V - 2075 - pF
Coss Output Capacitance VDS=25V - 120 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 7 A
1
ISM Pulsed Source Current ( Body Diode ) - - 18 A
3
VSD Forward On Voltage Tj=25°C, IS=7A, VGS=0V - - 1.5 V

Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A.
3.Pulse width <300us , duty cycle <2%.

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 SSM07N70CP,R-A

12

T C =25 o C V G =10V T C =150 o C

8
V G =10V
10
V G =6.0V V G =6.0V
V G =5.5V V G =5.5V

ID , Drain Current (A)

ID , Drain Current (A)

8 6

V G =5.0V
6
V G =5.0V 4

2
V G =4.0V
2

V G =4.0V
0 0
0 5 10 15 20 25 0 10 20 30 40

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.2 3

I D =3.5A

2.5 V G =10V

1.1
Normalized BVDSS (V)

2
Normalized R DS(ON)

1 1.5

0.9

0.5

0.8 0
-50 0 50 100 150 -50 0 50 100 150

T j , Junction Temperature ( o C) T j , Junction Temperature ( o C)

Fig 3. Normalized BVDSS vs. Junction Fig 4. Normalized On-Resistance

Temperature vs. Junction Temperature

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 SSM07N70CP,R-A

8 100

80
6
ID , Drain Current (A)

5
60

PD (W)
4

40
3

20

0
0
25 50 75 100 125 150 0 50 100 150

o o
T c , Case Temperature ( C) Tc , Case Temperature( C)

Fig 5. Maximum Drain Current vs. Fig 6. Typical Power Dissipation

Case Temperature

1
100

DUTY=0.5
Normalized Thermal Response (R thjc)

0.2
10

10us 0.1
ID (A)

0.1

100us 0.05

PDM

1 0.02 SINGLE PULSE t

T
1ms 0.01

o
T c =25 C Duty factor = t/T

Single Pluse 10ms Peak Tj = P DM x Rthjc + TC

100ms
0 0.01
1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS (V) t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

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 SSM07N70CP,R-A

f=1.0MHz
16 10000

14 I D =7A
Ciss
VGS , Gate to Source Voltage (V)

12
V DS =320V
V DS =400V
10
V DS =480V
Coss

C (pF)
8 100

Crss
2

0 1
0 5 10 15 20 25 30 35 40 45 50 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS (V)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

100 5

10

T j = 150 o C T j = 25 o C
3
VGS(th) (V)
IS (A)

0.1
1

0.01 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150

V SD (V) T j , Junction Temperature ( o C)

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature

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 SSM07N70CP,R-A

VDS
RD 90%

VDS TO THE
D OSCILLOSCOPE

0.5x RATED VDS

RG G

10%
+ S
10 V
VGS
VGS
-

td(on) tr td(off) tf

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

VG

VDS

TO THE QG
D OSCILLOSCOPE
10V
0.8 x RATED VDS
G QGS QGD

S VGS
+
1~ 3 mA
-
IG ID

Charge Q

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

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