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Etch Recipes
Etch Recipes
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Wet Etching Recipes (Page 1 of 2)
Die Deprocessing
Material to be Etched Chemicals Ratio Comments
Wet Etching
Hazardous Chemicals H3PO4 : Water : Acetic Acid PAN Etch;
Aluminum (Al) 16:2:1:1 200 nm/min @ 25 C;
Fab Chem. Reactions : HNO3
600 nm/min @ 40 C
may be used at 25 C but
Aluminum (Al) NaOH : Water 1:1 etches faster at a higher
temperature
Aluminum (Al) H3PO4 --- must be heated to 120 C
Chromium (Cr) HCl : Water 3:1 ---
Photo Chemical
Etching Chromium (Cr) HCl:Glycerin 1:1 ---
Precision & Copper (Cu) HNO3 : Water 5:1 ---
decorative
Copper (Cu) Ammonium Persulphate --- ---
chemically etched
custom metal parts. 115 g : 65 g :
Gold (Au) KI : I : Water ---
www.photofabrication.com 100 ml
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Die Deprocessing / Wet Etching Recipes - Page 2 of 2: Silicon to Vana... http://www.siliconfareast.com/etch_recipes2.htm
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Wet Etching Recipes (Page 2 of 2)
Die Deprocessing
Material to be Etched Chemicals Ratio Comments
Wet Etching
Hazardous Chemicals Silicon (Si) HF : HNO3 : Water 2:2:1 ---
Fab Chem. Reactions Silicon (Si) HNO3: HF : Acetic Acid 5:3:3 ---
for dissolving the die from the
package to allow inspection of
Silicon (Si) NaOH in Water --- eutectic die attach;
16 hours @ a temperature
near boiling point
Silicon dioxide (SiO2)- Buffered HF;
Thin Metal Etching NH4F:HF 6:1
thermally grown 120 nm/min @ 25 C
SS, Copper, Brass,
NiTi, Ti, etc. Silicon dioxide (SiO2)- slower etch;
HF : Water 1:10
.0001"-.060" Low thermally grown 30 nm/min @ 25 C
Cost, Quick-Turn Silicon dioxide (SiO2)- very slow etch;
HF : Water 1:100
www.kemactech.com thermally grown 1.8 nm/min @ 25 C
Silicon dioxide (SiO2)- very rapid etch;
HF ---
thermally grown 1.8 microns/min @ 25 C
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