NTE238

Silicon NPN Transistor

Color TV, Horizontal Output
Description:
The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use
in deflection circuits.

Features:
D VCEX = 1500V
D Safe Operating Area @ 50µs = 20A, 400V

Absolute Maximum Ratings;

Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current–Continuous, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current–Continuous, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), TL . . . . . . . . . +275°C

Electrical Characteristics: (TC =+25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) VC = 50mA, IB = 0 750 – – V
Collector Cutoff Current ICES VCE = 1500V, VBE = 0 – – 0.25 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 0.1 mA
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 1A – – 5.0 V
Base Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 1A – – 1.5 V
SWITCHING CHARACTERISTICS
Fall Time tf IC = 5A, IB1 = 1A, LB = 8µH – 0.4 1.0 µs

Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle = 2%.

 .135 (3.45) Max
.350 (8.89) .875 (22.2)
Dia Max
Seating
Plane

.312 (7.93) Min .040 (1.02)

E 1.187 (30.16)

.215 (5.45) .665

(16.9)
.156 (3.96) Dia
(2 Holes)
.430
(10.92) .188 (4.8) R Max

.525 (13.35) R Max

B C/Case