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All Figures For Slides
All Figures For Slides
0.8
0.6
Photon lifetime (ns)
0.4
0.2
-0.2
-0.4
-0.6
-0.8
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
Cavity Langth L (cm)
1400
Threshold Current DensityJth(A/cm2)
1200 1 layer
3 layers
1000 5 layers
7 layers
800
600
400
200
-200
0 5 10 15 20 25 30 35 40 45 50
2.5
1.5
1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
Cavity Langth L (cm)
3.5
2.5
1.5
1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
Cavity Langth L (cm)
22
20
Threshold current density, Jth (A/cm2)
18
16
14
12
10
4
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Cavity length, L (cm)
90
80
Threshold current density, Jth (A/cm2)
70
60
50
40
30
20
10
0
0 5 10 15 20 25
min
Normalised surface density of QDs, Ns/Ns
90
80
Threshold current density, Jth (A/cm2)
70
60
50
40
30
20
10
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
RMS value of QD size fluctuations
1
fp
0.9
fn
0.8 (fp-fn)
Level occupancies in QDs(fn,fp)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Applied voltage V (eV)
1
0.9
fp
fn
Level occupancies in QDs (fn,fp)
0.8
(fp-fn)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-10 -8 -6 -4 -2 0 2 4 6 8 10
Normalised applied voltage
200
hole
150
electron
100
Energy level (meV)
50
-50
-100
-150
-200
-250
20 30 40 50 60 70 80 90 100 110 120
Lens shaped dot base length (A)
45
s.d =17 A
40 s.d = 12 A
s.d = 7 A
35
s.d = 4 A
30
Probability (a.u)
25
20
15
10
0
500 600 700 800 900 1000 1100
Energy (meV)
500
350
300
250
200
150
100
50
0
0 1 2 3 4 5 6 7 8 9 10
2
Injection Current density, J-Jth (kA/cm )
150
50
-50
-100
-150
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Confined carrier level occupancy, fn
30
Gain (g) and threshold loss (cm-1)
20
-10
-20
-30
-40
0 1 2 3 4 5 6 7 8 9 10