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Strengthening of Titanium by Equal Channel Angular Pressing ‐ Impact on


Oxide Layer Properties of Pure Titanium and Ti6Al4V

Article  in  Advanced Materials Interfaces · June 2020


DOI: 10.1002/admi.202000552

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Strengthening of Titanium by Equal Channel Angular


Pressing - Impact on Oxide Layer Properties of Pure
Titanium and Ti6Al4V
Melanie Franz, Bernhard Mingler, Maciej Krystian, Laszlo Sajti, Darius Pohl,
Bernd Rellinghaus, Cornelia Wolf-Brandstetter, and Dieter Scharnweber*

to α/β-Ti-alloys such as the widely used


Equal channel angular pressing (ECAP) as a method applicable to large Ti6Al4V. These alloys are in turn critically
samples for strengthening metallic materials via severe plastic deformation discussed because of potential cytotoxic
effects of vanadium and aluminum,[1,2] ele-
has recently attracted considerable interest. For biomedical applications,
ments that can be found in high concentra-
ECAP-treated pure titanium is a promising alternative for implants subjected tions on the material surface and are also
to high mechanical loads as it contains no potentially cytotoxic alloying released into the surroundings.[3]
elements. The consequences of an ECAP treatment for the physico-chemical It is thus of great interest to improve the
properties of the air formed passive layers of pure or alloyed titanium, which mechanical properties of CP titanium, such
are of the utmost importance for the biological response to these materials, as ultimate tensile and fatigue strength, to
be able to replace the critically discussed tita-
are studied here for the first time. This includes mechanical, electron nium alloys in load bearing biomedical appli-
microscopic, and electrochemical investigations in protein containing media cations.[4,5] The use of severe plastic defor-
to study the reactions that occur immediately after implantation in the phase mation, multi directional forging,[6,7] and
boundary between implant and biological system. The ECAP treatment results especially equal channel angular pressing
in a positive shift of the flatband potential and a particularly strong increase of (ECAP)[5,8–10] to this end offers numerous
advantages. ECAP not only allows for rapid
the donor density for the native oxide layers. This is associated with increased
treatment of large samples[11] which can be
electronic conductivity of the oxide layers under anodic polarization. further processed for biomedical applica-
tions, but also results in high dislocation
and grain boundary densities of the metallic
Titanium based materials combine very good corrosion stability phase[12] in CP titanium. This stabilizes the air-formed passive layer
with mechanical properties appropriate for many biomedical and thus increases the corrosion stability compared to as received
applications especially for load bearing implants. However, com- (AR) coarse grained material.[13,14]
mercially pure (CP) titanium has mechanical properties inferior In the biomedical area, multiple in vitro and in vivo investi-
gations have shown that protein adsorption is a very early pro-
M. Franz, Dr. C. Wolf-Brandstetter, Prof. D. Scharnweber cess in the interaction of biomaterial surfaces with biological
Technische Universität Dresden systems.[15,16] As specific surface properties, that is, for tita-
Max Bergmann Center of Biomaterials nium-based materials the properties of the oxide layers, deter-
Budapester Straße 27, Dresden 01069, Germany
mine the adsorption of and interaction with proteins, they play
E-mail: Dieter.Scharnweber@tu-dresden.de
a key role in the biological response to these materials.
Dr. B. Mingler, Dr. M. Krystian, Dr. L. Sajti
AIT Austrian Institute of Technology GmbH Furthermore, we have shown earlier that the key parameters
Center for Health and Bioresources flatband potential (EFB) and donor density (Nd) of the n-type
Biomedical Systems semiconducting air-formed passive layer[17,18] vary for different
Viktor Kaplan Straße 2, Wiener Neustadt 2700, Austria titanium based materials.[19] Additionally, the electronic conduc-
Dr. D. Pohl, Dr. B. Rellinghaus tivity of the oxide layer on Ti6Al4V depends on the underlying
Technische Universität Dresden
Dresden Center for Nanoanalysis (DCN) metallic phase.[20,21]
Center for Advancing Electronics Dresden (cfaed) In this work the consequences of an ECAP treatment for the
Helmholtzstraße 18, Dresden 01069, Germany physico-chemical properties of the air-formed passive layers of
The ORCID identification number(s) for the author(s) of this article titanium-based materials were investigated for the first time.
can be found under https://doi.org/10.1002/admi.202000552. The experiments were performed under conditions relevant for
© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. a biomedical use. This included investigations in protein con-
KGaA, Weinheim. This is an open access article under the terms of the taining media for insight into reactions occurring immediately
­Creative Commons Attribution-NonCommercial License, which permits after implantation in the phase boundary implant/biological
use, distribution and reproduction in any medium, provided the original
work is properly cited and is not used for commercial purposes. system. We were able to show that an ECAP treatment of both
CP titanium and Ti6Al4V resulted in a positive shift of the
DOI: 10.1002/admi.202000552 flatband potential of the native oxide layer, and a particularly

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strong increase of their donor density. This was accompanied Table 1.  Grain size (determined from SEM images) and hardness data
by an increased electronic conductivity of the oxide layers under for titanium and Ti6Al4V in the states AR and ECAP.
anodic polarization. Material Grain size ± SD [µm] Hardness ± SD [HV10]
Microstructural changes of the materials associated with
Ti AR 11.1 ± 0.3 177 ± 1
the ECAP treatment are illustrated in Figure  1, that compares
Ti ECAP 1.55 ± 0.02 236 ± 2
Ti6Al4V AR α phase 0.19 ± 0.005 300 ± 3
β phase 1.46 ± 0.02
Ti6Al4V ECAP α phase 0.19 ± 0.003 373 ± 3
β phase n.d.

SEM images of both materials and STEM images of Ti6Al4V


in the AR and ECAP state. Additionally, scanning transmission
electron microscope (STEM) energy dispersive X-ray analyses
(EDX) distribution images and electron energy loss spectro­
scopy (EEL) spectra are presented. The grain size of the four
materials as derived from the analysis of scanning electron
microscope (SEM) images is summarized together with the
HV10 hardness data in Table 1.
For titanium the SEM data reveal a strong ECAP-induced
reduction of the grain size by a factor of about 7 (11.1  ±  0.3 to
1.55  ±  0.02  µm). This decrease is associated with a significant
increase of the hardness by almost 50%. These data are in good
agreement with the literature for similar ECAP conditions both
in the grain size reduction[22] and hardness increase.[10,23–25] For
Ti6Al4V the SEM images indicate no effect of the ECAP treat-
ment on the grain size of the α phase. For the β phase, how-
ever, no separate detectable grains are present after the ECAP
treatment, a drastic reduction compared to Ti6Al4V AR (grain
size 1.46  ±  0.02  µm) that is in agreement with the findings of
Semenova et al.[26] It is also possible that the observed effect is
at least partially due to a decrease in the amount of β phase as
described by Valiev et al.[8]
In contrast, STEM images show a much finer overall micro-
structure for ECAP-treated Ti6Al4V as compared to the AR
sample, indicating that small angle grain boundaries are not
resolved by the etching process in this material. This finding
is similar to the grain size differences between SEM and trans-
mission electron microscope (TEM) reported for Ti.[22,24,25] The
ECAP effect on the hardness of Ti6Al4V amounts to 25% and
is thus smaller than for titanium but still significant, which is
in good agreement with ref. [27]. A detailed analysis of SEM
images from sample center and edge in both the horizontal and
vertical direction showed no significant microstructural differ-
ences for any of the four investigated materials (Table S2, Sup-
porting Information).
EDX elemental mapping of AR Ti6Al4V and the ECAP-treated
samples show large differences in the elemental distribution of
Figure 1.  Comparison of the ECAP-induced changes in the microstruc-
V and Al. Ti and O are homogeneously distributed in both AR
ture of Ti and Ti6Al4V. Data of the as received (AR) and ECAP-treated and ECAP-treated samples, and while Al and V distribution in
samples are grouped in the left and right column of the figure, respec- the ECAP-treated sample are also mostly homogeneous, they
tively. A,B) SEM images of Ti. C,D) Corresponding EEL spectra (from are phase-separated in the AR state. In both samples, oxygen is
cross-sectioned samples) of the surface oxide layer (blue) and the bulk mainly present at the surface and not diffused into the bulk.
area of the samples (red). E,F): SEM images of Ti6Al4V. G,H) STEM Local EEL spectra of the surface oxide layer and the bulk area
images and EDX-derived elemental mappings of Ti, O, Al, and V from
are obtained from cross-sectionally prepared samples and are
the regions marked in the STEM images. I,J) Corresponding EEL spectra.
The absorption peaks at the L3 and L2 edges are due to excitations from used to quantify the native sample oxide surface layer thick-
the Ti 2p3/2 and 2p1/2 core level states into the unoccupied 3d t2g and eg ness. For this, the intensity of the O–K edge was plotted as a
states, respectively. function from the surface to the depth of the metallic phase (for

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Figure 2.  Flatband potentials A,B) EFB ± SE and donor densities C,D) Nd ± SE of air-formed passive layers on titanium (Ti) and the bi-phasic alloy
Ti6Al4V both in the AR and ECAP-treated state. Diagrams (A) and (C) present data in 0.133 m phosphate buffers (pH 4.4, 7.4, and 9.2), diagrams (B)
and (D) compare data from phosphate buffer 7.4 (phosphate) with 0.2 m NaClO4 electrolyte (perchlorate) and cell medium. The gray line in diagram
(A) with the assigned text “60 mV per pH” indicates the theoretical slope of EFB per pH curves; ⁎, ⁎⁎, ⁎⁎⁎ for p < 0.05, 0.01, 0.001.

details see Figures S1–S4, Supporting Information). Fitting the (Figure 2A) and the media composition for pH 7.4 (Figure 2B)
resulting intensity at the surface by a Gaussian resulted in oxide are in a range between −100 and −900 mVAgCl with the trend in
layer thickness data of 7 ± 1 and 23 ± 2 nm for Ti in the AR and diagram (Figure 2A) following the theoretical slope of −60 mV
ECAP state, respectively; for Ti6Al4V these values are 6 ± 1 nm per pH.[32] In phosphate buffers the values for ECAP-treated
for AR and 21  ±  1  nm for ECAP. These more than threefold materials are more positive by 300–400 mV compared to the AR
thicker oxide layers for ECAP-treated materials are contrary to state (exception Ti6Al4V ECAP). Additionally, the values for tita-
Garbacz et al.[28,29] who did not find an effect of ECAP treatment nium are significantly more positive compared to Ti6Al4V for
of oxide layer thickness. In addition, a strong modification of the both treatments in all investigated media.
Ti-L fine structure was visible due to the altered oxidation state Comparing the effects on AR and ECAP materials of per-
in the surface area (Figure  1). To increase the signal-to-noise chlorate electrolyte and cell culture medium to phosphate
ratio, spectra are averaged parallel to the surface. Figure 1 shows buffer in Figure 2B, opposing results are found for the different
the Ti-L edge spectra for the individual samples of the oxide sur- materials. While for AR cell culture medium results in more
face layer as well as of the bulk. The absorption peaks at the L3 positive flatband potentials compared to phosphate buffer, for
and L2 edges are due to excitations from the Ti 2p3/2 and 2p1/2 both ECAP materials a ranking in the order of phosphate > per-
core level states into the unoccupied 3d t2g and eg states, respec- chlorate > cell medium is observed. These differences are all
tively. A strong chemical shift between the two spectra (red and significant for Ti, for Ti6Al4V this is true only for phosphate
blue curves in Figure  1) reveals a strong oxidation of Ti in the buffer compared to the two other electrolytes.
surface layer. This also manifests in the fine structures (i.e., the The data for the donor densities in Figure  2C,D show
“sharpening”) of the L3 and L2 peaks. an extremely significant effect of the ECAP treatment.
Flatband potentials and donor densities were derived from Whereas the values for both materials in the AR state are
a Mott-Schottky analysis of the impedance data in analogy to between 2.3  ×  1020 cm−3 (for titanium in cell medium) and
ref. [19]. The relative dielectric constant was set to 50 based on 6.1  ×  1020 cm−3 (for Ti6Al4V in phosphate buffer 7.4), donor
literature[30,31] and in agreement with earlier work.[19] As no lit- densities increase by more than two orders of magnitude to
erature data are available for oxide layers on Ti6Al4V, a relative 1.8 × 1021 – 1.1 × 1022 cm−3 and 3.6 × 1022 – 2.8 × 1023 cm−3 for
dielectric constant of 50 was also used here. Ti ECAP and Ti6Al4V ECAP, respectively.
With the exception of Ti6Al4V ECAP in cell medium, The donor densities for ECAP-treated Ti6Al4V are at least one
the EFB values as a function of the pH for phosphate buffers order of magnitude higher than the corresponding values for Ti

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ECAP over all studied media. Further, for both materials the same After 300 s at the open circuit potential (EOCP), galvano-
ranking of perchlorate > cell medium≈phosphate (7.4) is observed. static polarization with increasing current densities from 0.5 to
No other groups have so far compared the semiconductor 5 mA cm−2 for 120 s each was applied until a maximum poten-
properties of air-formed oxide layers on ECAP-treated and tial of 10 VAgCl was reached (Figure  3A–D). The dotted lines
AR titanium based materials. Although the flatband poten- with a slope of 2.5 mC V−1 cm−2 in these diagrams, assigned to
tials in Figure 2A,B, are shifted to more positive values due to 100% Faraday efficiency (FarEff), indicate the theoretical gain of
the ECAP processing, the values remain negative to the body the potential given the case that all charge transferred through
potential given with 400 to 500 mVAgCl by Velten et  al.[33] and the system is used for oxide formation.[39] Thus, higher poten-
thus in the “biologically safe region”. Other groups, how- tials at comparable time points of polarization can be assigned
ever, report redox potentials measured in plasma as being in to higher Faraday efficiencies for the oxide formation for a given
the range of −334  ±  9 mVAgCl for healthy patients aged below material, corresponding to a lower amount of oxygen formation
60 years.[34] These values increase to with age and/or diseases as a side reaction due to the lower electronic conductivity of the
such as diabetes type 2 or atherosclerosis to values above oxide layer. Further, for galvanostatic polarization the time axis
−280 mVAgCl.[35,36] Given these data, the EFB-values measured for in the diagrams can also be considered as a charge density axis.
both ECAP-treated materials in phosphate buffer pH 7.4 come For phosphate buffer 7.4 (Figure  3A,B) the AR state of both
close the redox potential and indicate potentially increased materials results in different shapes of the potential/time (charge
electronic conductivity of the oxide layers under these condi- density) curves. Whereas a continuously rising curve for current
tions. Interestingly, the flatband potentials determined in cell densities ≥ 1 mA cm−2 is observed for Ti AR, after a similar start
medium become more negative after ECAP treatment, which a voltage maximum is detected for Ti6Al4V AR at the end of the
might be related to the cysteine/cysteine and glutathione/glu- 1.5 mA cm−2 polarization interval between 600 and 650 s. This
tathione disulfide redox systems present in this medium[34] in corresponds to a transferred charge density of ≈350 mC cm−2.
combination with the increased electronic conductivity of the Irrespective of these differences, the Faraday efficiency for the
oxide layers at potentials positive to the flatband potential. formation of anodic oxide of both AR materials is substan-
Although a general increase in the dislocation and grain tially above the corresponding ECAP materials throughout
boundary density is expected as a consequence of an ECAP the whole experiment. These materials show flatter curves
treatment,[37] little is known about specific values for either that start to rise at higher current densities (≥1.5  mA cm−2),
CP titanium or Ti6Al4V as a function of the ECAP treatment indicative of a higher inherent electronic conductivity of the
parameters.[12] For the strong increase in the donor densities of oxide layers.
the air-formed oxide layers shown in Figure  2C,D, we hypoth- For perchlorate electrolyte (Figure  3C,D) the potential/time
esize a correlation with the dislocation densities in the metallic (charge density) curves for Ti AR and Ti ECAP are in general
phase that forms the substrate for the oxides layers. Zhilyaev comparable to those for phosphate buffer. However, the current
et  al.,[23] have reported an increase in the dislocation density density at which potentials start to rise continuously (the point
from ≈0.03 × 1015 m−2 for the AR material to above 0.4 × 1015 m−2 where the electronic conductivity of the oxide layer requires the
depending on the location within the ECAP-treated titanium formation of additional oxide to be able to transport all charge)
sample, with an oxygen content corresponding to grade 1 for is shifted toward higher values. This shift is to 1.5 instead of
ECAP conditions similar to those used in our work. Schafler 1  mA cm−2 for Ti AR and to 2 instead of 1.5  mA cm−2 for Ti
et al.[38] report even higher dislocation densities of 2 × 1015 m−2 ECAP, with the slopes for higher current densities being steeper
for titanium grade 2 after an ECAP treatment with 8 passes BC for both materials compared to those in phosphate buffer.
in the same temperature range as used here. For Ti6Al4V an For both Ti6Al4V states a very limited increase of the poten-
increase in the dislocation density by almost an order of mag- tial is observed for polarization in perchlorate electrolyte. A
nitude (0.8 and 7.5 × 1015 m−2) is reported for AR and ECAP voltage maximum similar to the one in phosphate buffer occurs
states for six ECAP passes at 650 °C under conditions identical for Ti6Al4V AR at current densities ranging from 2.5 to 4 mA
to those applied in this work.[26] cm−2 between individual samples. For Ti6Al4V ECAP potentials
Galvanostatic anodic polarization in phosphate buffer 7.4 and stay below 3.5 VAgCl even for the highest current density, inter-
perchlorate electrolyte was applied as an independent method secting the 2 VAgCl line for current densities between 2.5 and
to study the effect of ECAP treatment on the electronic conduc- 3 mA cm−2. Whereas for titanium the Faraday efficiency for the
tivity of oxide layers on the different materials (Figure 3). oxide formation of the AR state is clearly above the ECAP state,
Possible (electrochemical) reactions during polarization can no such conclusion can be drawn for Ti6Al4V.
be described with: Figure 3E shows a quantification of the required charge den-
sities to reach potentials of 5, 8, and 10  VAgCl as a function of
Ti → Ti4+ + 4 e− for the formation of titanium ions in the interface the material treatment (AR or ECAP) and the electrolyte for all
metal/oxide investigated samples. A value of 2500 mC cm−2 with no error
Ti4+ + 2 O2−→ TiO2 and their reaction with oxygen ions formed in the bars in the diagram indicates that the target voltage was not
interface oxide/electrolyte via dissociation of water for reached for the given combination of material and electrolyte.
the oxide formation
For Ti AR the charge densities required to reach potentials
and with: of 5, 8, and 10 VAgCl increase continuously in both electrolytes,
2 H2O → O2 + 4 H+ + 4 e− for the formation of oxygen by oxidation of water in with the values in phosphate buffer being above those of per-
the interface oxide/electrolyte due to the electronic chlorate electrolyte. All data stay well below 1000 mC cm−2 even
conductivity of the oxide layer as side reaction.
for 10 VAgCl. Controversially, the required charge densities for

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Figure 3.  Galvanostatic anodic polarization: Typical potential/time (charge density) curves for stepwise galvanostatic polarization with current densi-
ties increasing from 0.5 to 5 mA cm−2 for A,C) titanium and B,D) Ti6Al4V in the AR and ECAP state in phosphate buffer 7.4 (A,B) and perchlorate elec-
trolyte (C,D). The dotted lines correspond to a theoretical curve for 100% Faraday efficiency for oxide formation. Diagram (E) quantifies the potential/
time (charge/density) curves presenting charge density data required to reach different potentials. Columns with a charge density of 2500 mC cm−2
without error bars indicate that this potential was not reached for the given combination of material and electrolyte; ⁎, ⁎⁎, ⁎⁎⁎ for p < 0.05, 0.01, 0.001.

Ti ECAP increase from about 700 mC cm−2 for 5 VAgCl to ≈1500 lyte. For the two ECAP-treated materials, higher charge densi-
and 2000 mC cm−2 for 8 and 10 VAgCl, respectively, and are com- ties are required in both electrolytes to reach given potentials, a
parable between the two media. A similar situation is observed difference that is already pronounced for 5 VAgCl.
for Ti6Al4V AR in both media, but with a parallel shift to higher We thus can rank the electronic conductivities of the
required charge densities for the perchlorate electrolyte and a forming anodic oxide layers in the initial phase of polariza-
strong increase in the required charge densities between 8 and tion in the order of Ti6Al4V ECAP > titanium ECAP > Ti6Al4V
10 VAgCl. While charge densities required for 5 and 8 VAgCl are AR≈titanium AR, which is in perfect agreement with the Nd
comparable between Ti AR and Ti6Al4V AR this is no longer data presented in Figure 2C,D.
the case for 10 VAgCl. This potential is reached for Ti6Al4V AR The increasing slope of the potential/time (charge density)
in phosphate buffer only at a charge density twice as high as curves for ECAP-treated titanium at potentials > 6 VAg/AgCl indi-
the one for Ti AR and not reached at all in perchlorate electro- cates an increasing Faraday efficiency. Anodic oxide formation on

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titanium based materials in neutral electrolytes results in oxide Conflict of Interest


layers from two sub-layers.[40] While the inner part is formed via
The authors declare no conflict of interest.
solid state reaction between titanium ions and oxygen ions in the
metal/oxide interface, the outer part is formed via “precipitation”
by transferred titanium ions with electrolyte components in the
interface oxide/electrolyte.[39] Here we postulate that the growing Keywords
outer part of these oxide layers is mainly responsible for the
donor density, equal channel angular pressing, flatband potential, oxide
increased Faraday efficiency, as its properties will not be affected
layer properties, titanium
by the dislocation density in the metallic phase.
In conclusion, we present the first physico-chemical data Received: March 27, 2020
on the properties of air-formed and anodically prepared oxide Revised: May 8, 2020
layers on ECAP-treated titanium materials. Studying changes Published online:
in the flatband potentials, donor densities, and electronic con-
ductivities of the oxide layers, we conclude that these properties
potentially influence the biological response to such materials
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