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Sensors and Actuators B 127 (2007) 447–454

An ammonia gas sensor based on non-catalytically synthesized carbon


nanotubes on an anodic aluminum oxide template
Nguyen Duc Hoa, Nguyen Van Quy, Yousuk Cho, Dojin Kim ∗
School of Nano Science and Technology, Chungnam National University, Daejeon, Republic of Korea
Received 7 February 2007; received in revised form 27 April 2007; accepted 27 April 2007
Available online 3 May 2007

Abstract
In this study, an ammonia gas sensor structure for mass production is realized with an array of carbon nanotubes synthesized on an anodic
aluminum oxide (AAO) template. The device is expected to yield a uniform performance due to the regular and uniform nano channels in the
AAO. It is a vertical structure made with open-ended multi-wall carbon nanotubes through deposition on the inside wall of the AAO so that the gas
would diffuse into the nano channels for adsorption. The carbon nanotubes are in the form of flaked carbons having many defect sites. The results
show that the sensor has high sensitivity, fast response time of less than 1 min and good reproducible recovery behaviors in atmospheric pressure
at room temperature.
© 2007 Elsevier B.V. All rights reserved.

Keywords: Carbon nanotube; AAO; Ammonia gas sensor

1. Introduction difficult to control due to the self-assembling nature of the syn-


thesis process. In particular, the control of the synthesis process
Gas sensors have attracted interest due to their varied appli- is usually not accurate enough to reproduce the length, density
cations [1–5]. Many of the traditional gas sensors were based and diameter of the CNTs from operation to operation. Also, the
on the change in electrical conductance of the semiconducting poor adhesion of the CNTs on substrates is related with device
oxide materials, such as WO3 , TiO2 , SnO2 and ZnO [6–9]. The reliability. On the other hand, in the latter method, the perfor-
oxide gas sensors, however, usually operate above room temper- mance and sensitivity of the sensor device will greatly depend
atures, rendering limited practical applications. Recently, with on the amount of CNTs in the pastes. For a higher content of
the advent of carbon nanotubes (CNTs), they have attracted great CNTs in the paste, blending is a critical issue that is yet to be
interest for use as gas sensors mainly due to their large surface resolved. Therefore, a precise control of the CNT amount in the
area, high electrical conductivity and chemical stability while paste and the paste thickness are required for device uniformity.
the surface reacts with gas molecules [10–14]. In this context, the authors propose a new CNT sensor
CNT-based sensors have been investigated for the detection structure. Its main features are: (i) the substrate called anodic
of gases of H2 , NO2 , CO2 , O2 and NH3 [15–20] as well as of aluminum oxide (AAO) and (ii) the CNTs synthesized on the
other chemicals like organic compounds [21,22]. Both single- surface of the nano pore wall. The AAO fabricated on a Si sub-
wall (SWNTs) and multi-wall carbon nanotubes (MWNTs) have strate is mechanically stable and forms regular arrays of nano
been used as the sensing probes. For device fabrication, either pores of uniform diameter and length. The CNTs synthesized on
CNTs were directly synthesized on substrates via chemical the surface of the nano pore wall conform to the geometry of the
vapor deposition (CVD), or the collected CNT powders were nano pores in the AAO, and thus they also form regular arrays
pasted on substrates. In the former method of CNT application, of nanotubes of uniform diameter and length. In addition, since
our experience showed that the uniformity of the CNTs was the size control of the nano pores in AAO is very much repro-
ducible in the anodization process, the uniform CNT structure
can be reproducibly realized. Due to the large-area extensibility
∗ Corresponding author. Tel.: +82 42 821 6639; fax: +82 42 823 4224. of the AAO template, sensor devices can be mass-produced as
E-mail address: dojin@cnu.ac.kr (D. Kim). well. This integration capability of uniform structure is a key

0925-4005/$ – see front matter © 2007 Elsevier B.V. All rights reserved.
doi:10.1016/j.snb.2007.04.041
448 N.D. Hoa et al. / Sensors and Actuators B 127 (2007) 447–454

factor in all the device fabrication procedures. Another charac- for 35 min to completely remove the barrier layer at the bottom of
teristic of the sensor is the vertical structure, which is contrary the nano pores. This process was necessary to guarantee the elec-
to other parallel-to-the-surface structures in that it monitors the trical contact between the substrate and the CNTs, which will be
gases diffused into the nano pores and adsorbed on the inside formed on the nano pore wall in the next step. Thus, the formed
wall of the CNTs. We tested the structure as an ammonia sensor AAO/Si substrate is schematically illustrated in Fig. 1(a). The
using the conductance change upon the gas adsorption. resultant nano pores in the AAO template are shown in Fig. 2(a).

2. Experiment 2.2. CNT synthesis

The schematic of the fabrication process of the sensor struc- CNTs were synthesized via a thermal chemical vapor depo-
ture is illustrated in Fig. 1. It consists of fabrication of the AAO sition (CVD) method. The CNTs on AAO templates can be
template on a p-type Si(1 0 0) substrate (Fig. 1(a)), CNT synthe- synthesized with or without metal catalysts. With the metallic
sis on the AAO by thermal CVD (Fig. 1(b)), formation of the catalyst particles, the CNT synthesis usually occurs randomly
nano channel probe structure (Fig. 1(c)) and electrode formation on a part of the particles, and it further grows out of the pores
(Fig. 1(d)). [24,25]. This morphology has no advantages for using the reg-
ularity of the nano structure involved in the AAO template.
2.1. Anodic aluminum oxide template Therefore, we employed the synthesis without the catalysts. In
addition, we show in this study that flaked graphite sheets of
The AAO template of nano pores was fabricated with Al MWNTs are pyrolytically deposited on AAO, conforming to the
thin films deposited on Si wafers via the two-step anodization surface geometry of the nano pores [26]. Thus, a high synthesis
process [23]. Aluminum thin films of ∼2 ␮m thickness were temperature could be expected to enhance the crystallinity of
deposited on p-Si(1 0 0) wafers using a RF-sputtering method. the CNTs. We compared the gas sensing properties of the CNTs
The deposited Al films were annealed at 500 ◦ C in a nitrogen synthesized at two different temperatures of 1200 and 900 ◦ C.
atmosphere for 30 min to improve their adhesion to the Si sub- The AAO/Si template was placed in a horizontal quartz tube
strate. The first anodization process was carried out in a 0.3 M furnace, and the tube furnace was evacuated to ∼10−3 Torr. The
oxalic acid solution maintained at 10 ◦ C. A constant voltage furnace temperature was then raised to the synthesis tempera-
of 45 V was applied between the cathode and the anode for tures at a rate of 15 ◦ C/min for the CNT synthesis by allowing a
∼12 min. Since the morphology of the nano pores formed via mixture of C2 H2 (90 sccm) and NH3 (10 sccm) gases to flow for
the first anodization was relatively poor, the AAO layer was 30 min. During the growth, the pressure in the furnace tube was
dip-etched away in a solution of 6 wt.% phosphoric acid and kept at ∼10−2 Torr. After the CNT growth, the tube was evacu-
1.8 wt.% chromic acid balanced in water. The Al surface after ated again to ∼10−3 Torr and was kept there while the furnace
the first anodization and the removal processes provided a sur- cooled down to room temperature.
face morphology suitable to seeding towards a more regular The synthesis of CNTs on the AAO template is done by pyrol-
array of nano pores. The second anodization was carried out for ysis of the carbon source, and the CNT growth rate on the top
25 min in the same manner as in the first anodization process. of AAO is much faster than in the pores of AAO [26]. Thus,
The nano pores were then dip-etched in a 0.1 M phosphoric acid the pore entrances are often blocked by an overgrown carbon

Fig. 1. Schematics of sensor fabrication process. (a) Synthesis of AAO on p-type Si substrate, (b) synthesis of CNTs by thermal CVD, (c) removal of the top carbon
layer by oxygen plasma (for 1200 ◦ C synthesis) and (d) Ag electrode deposition.
N.D. Hoa et al. / Sensors and Actuators B 127 (2007) 447–454 449

Fig. 2. SEM images for (a) the AAO template (insert shows the top view), (b) the CNTs with blocked pores (1200 ◦ C synthesis), (c) the CNTs with open ends (900 ◦ C
synthesis) and (d) the sensor with Ag electrode deposition.

layer through the shadow effect, while the inside of the pores was tilted at about 30◦ from the normal incidence of the sputter
are voided with CNT formation in the step, as shown in Fig. 2(b). beam. The dc sputtering process was carried out at a pressure
This is the case particularly at a high synthesis temperature of of 5 × 10−3 Torr and a current of 40 mA for 2 min to achieve a
1200 ◦ C. The top graphite layer then needs to be removed to thickness of 40 nm (Fig. 1(d)).
use the CNTs on the pore wall as the sensing probe. Oxygen The test chamber was first evacuated and then filled with N2 .
plasma etching was then used in order to remove the carbon The initial state of the gas sensing test was established by a
layer deposited on the top in order to obtain open tube CNTs in steady state resistance of the sensor under a nitrogen flow. The
the step, as shown in Fig. 1(c). This was done for 20 min with a gas sensing properties were measured at atmospheric pressure
radio frequency power of 100 W at a pressure of ∼5 ×10−2 Torr. of the gases at room temperature by measuring the resistance
However, the growth kinetics at 900 ◦ C was relatively slow, and between the top Ag electrode and the bottom semiconductor.
the pore entrances could be maintained open during the synthe- The gases of nitrogen and ammonia were introduced into the
sis; thus, the oxygen plasma etching process was not required. chamber at a rate of 500 sccm using mass flow controllers. The
In the following, we will see the effect of oxygen treatment on concentrated ammonia was diluted by mixing with high purity
the sensor performance. of N2 gas.
The morphology of the synthesized CNTs was examined by
field-emission scanning electron microscopy (FE-SEM, Hitachi
S-4700), high-resolution transmission electron microscopy 3. Results and discussion
(HRTEM), micro Raman spectroscopy using a wavelength
of 514.532 nm (Ar-ion laser) and X-ray photoelectron spec- 3.1. Carbon nanotube property
troscopy (XPS) methods.
The morphologies of the AAO template and the synthesized
2.3. Device fabrication and characterization CNTs investigated with FE-SEM are shown in Fig. 2. The AAO
nano pores of two-dimensional arrays with uniform size and dis-
Thin films of Ag were then sputter deposited for the elec- tribution are illustrated in Fig. 2(a). The diameter and inter-pore
trode. In order to avoid the deposition into the pores, the sample distance were about 65 and 105 nm, respectively. The pore length
450 N.D. Hoa et al. / Sensors and Actuators B 127 (2007) 447–454

was about 1.4 ␮m. It can be seen that the pores go through the
substrate. The morphology after the CNT synthesis at 1200 ◦ C is
shown in Fig. 2(b), where the entrances of the pores are blocked
with graphite layers due to the accelerated pyrolysis at a rel-
atively high synthesis temperature. The morphology at 900 ◦ C
did not show the blocking of the entrances, as shown in Fig. 2(c).
The surface with open entrances, after removing the top graphite
layers by oxygen plasma for 1200 ◦ C grown CNTs, was appar-
ently similar to that in Fig. 2(c). The partly cracked section
also revealed the CNTs synthesized on the inside of the pore
walls. The morphology after Ag electrode deposition is shown
in Fig. 2(d).
The crystallinity of the synthesized carbon nanotubes was
examined with TEM and Raman spectroscopy. Fig. 3(a) shows
a TEM image of the 1200 ◦ C grown CNTs taken after etching the
AAO template away. This again revealed the uniformity of the
synthesized CNTs in length and diameter. The average length
was 1.4 ␮m according to the length of the pores, but the diameter
of the CNTs, ∼70 nm, was a little greater than that of the pores.
The latter can be attributed to the shrinkage of the AAO body
during the high-temperature CNT synthesis. The as-synthesized
AAO template by anodization was mostly in amorphous form,
but it crystallized with high temperature annealing [27]. The high
synthesis temperature would certainly offer the annealing effect
for the crystallization and densification of the AAO, and accord-
ingly enlarge pore diameters. Fig. 3(b) shows an HRTEM image
of the MWNT wall grown at 1200 ◦ C. The stack of graphene
sheets was clearly observed for its thickness of ∼15 nm. The
crystallinity was better than that grown at 900 ◦ C, as shown in
Fig. 3(c). It is well known that the CNTs synthesized on AAO
without catalyst are formed by flakes of carbon sheet instead
of continuous sheets. One study noted at the higher tempera-
ture synthesis that: (i) the sizes of the flaked graphite plates
are greater and (ii) the interlayer spacing is ∼0.34 nm, which
agrees well with the spacing of the graphite of high crystallinity
[28]. Therefore, the present results are great improvements in
crystallinity with respect to the lower-temperature synthesis.
Raman spectroscopy investigation also revealed the high
crystalline quality of the synthesized MWNTs, as shown in
Fig. 4. In general, two main peaks were observed at 1288 and
1592 cm−1 . They are called D- and G-bands, respectively [29].
The D-band is known to be associated with defective, disordered
graphite or glassy carbon, while the G-band is related to the sp2
vibration in the graphite of a two-dimensional hexagonal lattice
[30]. The ratio of the peak intensities or IG /ID has often been
referred to as a measure of the crystallinity of the synthesized
carbon nanotubes [29]. The estimated ratio of ∼1.17 for 1200 ◦ C
CNTs was compatible with that of the MWNTs synthesized on
catalytic metals via a thermal CVD method [29]. The spectrum
can again be compared with that synthesized at a lower tem-
perature of 900 ◦ C [31], where the smaller IG /ID ratio (∼0.8)
suggests more defects in the CNTs. This comparison again con-
Fig. 3. (a) TEM image of the CNTs showing uniform distribution of length and
firms the higher crystallinity of the CNTs for higher synthesis diameters. HRTEM images of the CNT walls synthesized at (b) 1200 ◦ C and (c)
temperature. 900 ◦ C.
The XPS examination of the 1200 ◦ C CNTs is shown in
Fig. 5(a). It shows the presence of aluminum, oxygen and car-
bon. The analysis of the C 1s peak reveals it as an overlap of some
N.D. Hoa et al. / Sensors and Actuators B 127 (2007) 447–454 451

isons and measurements conclude that the employment of high


temperature in the CVD synthesis on AAO can really enhance
the crystallinity of the CNTs. However, we note that the gas sens-
ing properties were not positively related with the crystallinity
of the CNTs.

3.2. Sensor property

It is known that the conductivity of CNTs changes with the


adsorption of gas molecules, and such behavior allows us to use
CNTs as gas sensors. The current–voltage (I–V) characteristic of
the as-synthesized CNTs was measured by applying the voltage
between the top Ag electrode and the p-type Si substrate. The
typical I–V characteristic of the junction between the CNTs and
the Si substrate in nitrogen environment is illustrated in Fig. 6 for
Fig. 4. Raman spectra of the CNTs synthesized at (a) 1200 ◦ C and (b) 900 ◦ C.
the 1200 ◦ C grown CNTs. It reveals that the multi-wall metallic
flaked carbons form a rectifying junction at the contact with
peaks (Fig. 5(b)). The peak at 284.4 eV is attributed to sp2 car- p-type Si. The turn-on voltage was ∼0.5 V, which agreed well
bon, and this C–C bonding peak indicates the high crystallinity with a report on MWNTs [33]. A similar rectifying I–V curve
of the CNTs. The other broad peak at 288.5 eV is attributed to was also obtained for the 900 ◦ C CNTs.
carbons attached to oxygen (e.g., carboxyl and C–O groups) As shown in Fig. 6, the resistance change in an ammonia
[32]. The peak for metal-carbide (Al–C) at 282 eV was absent, gas environment was noticeable at forward biases (Va ). How-
indicating the high thermal and chemical stabilities of the CNTs ever, an interesting observation was that the resistance change
at the employed high temperature of 1200 ◦ C. All the compar- was positive for the 1200 ◦ C CNTs sensor, while it was neg-
ative for 900 ◦ C one, as clearly illustrated in Fig. 7(a), where
the response was measured upon the introduction of 6% ammo-
nia gas at Va = 5 V. A theoretical calculation showed that each
NH3 molecule donates 0.04 electrons to the nanotubes when
adsorbed on the surface of carbon nanotube [34]. Since ammo-
nia is an electron donor, a resistance decrease was expected
with ammonia adsorption on the CNTs. This is the case for the
900 ◦ C CNTs. However, the 1200 ◦ C CNT sensor behaves like
a p-type semiconductor, or resistance increases with ammonia
adsorption. Recall that the 1200 ◦ C CNTs underwent an oxygen
plasma etching process to remove the top carbon layer, while
the 900 ◦ C CNTs did not. This type of conversion was caused
by an oxygen adsorption as observed in other MWNTs [35] and
SWNTs [36]. This oxygen treatment effect was confirmed with
the 900 ◦ C CNTs sensor. It originally revealed a decrease in

Fig. 5. (a) XPS spectrum of the CNTs synthesized at 1200 ◦ C and (b) the high Fig. 6. Current–voltage characteristics of the sensor with nitrogen () and
resolution of the core level peak for C 1s. ammonia () flows for the CNTs synthesized at 1200 ◦ C.
452 N.D. Hoa et al. / Sensors and Actuators B 127 (2007) 447–454

The sensor response defined by S = 100% × (I − I0 )/I0 , where


I0 is the current measured under the flowing of N2 and I is that
under NH3 , was also examined by varying the ammonia concen-
tration. Fig. 7(b) shows the response values measured at Va = 5 V,
which are close to the condition for the maximum response of
the sensors. The comparison reveals that: (i) the lower-quality or
defective CNTs (900 ◦ C CNTs) have a larger response and (ii)
oxygen adsorption on CNT degrades the response. The obser-
vation suggests that the favorable gas adsorption sites are not
the perfect honeycomb lattices of the graphene sheet, but can
be the distorted lattices and/or the defective boundaries between
the flaked carbon sheet islands. One can observe that the 900 ◦ C
grown CNTs have more distorted wavy lattice in each flake and
more boundaries between the flakes, as shown by the TEM pic-
tures in Fig. 3. The favorable adsorption onto the defective sites
of the CNT surface was previously proposed [35]. However,
the smaller response of the CNTs having oxygenated defects
suggests that they are less interactive with NH3 than the balanc-
ing gas N2 . Ionescu et al. [35] theoretically and experimentally
showed that NH3 is not sensitive to the defects on CNTs created
by the oxygen plasma treatment, such as vacancies. Therefore,
the oxygenation degrades the response to ammonia, but the
crystallographic defects can enhance it in the CNT ammonia
sensors.
The switching behavior of the 900 ◦ C sensor was further
examined with varying NH3 concentrations in Fig. 8. The almost
complete return to the original resistance at each cycle was
remarkable. While this property is an extremely important ingre-
dient to be possessed by a sensor, such behavior may also suggest
the possible binding status of the molecules. The atomic bind-
ing sites on the CNT surface for ammonia and nitrogen kept
changing because they continuously flowed and washed out the
previously adsorbed molecules. Therefore, the exposure of a
Fig. 7. (a) Resistances change of the sensors by switching from N2 to NH3 (6%) binding site to a particular in-coming molecule was statistically
flow and (b) the sensor response of the sensors measured with varying the NH3 determined by the partial pressure of each molecule in the flow.
concentration. The response of the device measured at different NH3 concen-
trations, as summarized in Fig. 7(b), showed a linear increase
resistance upon exposure to ammonia, but it rather revealed an at a concentration higher than ∼1%. The linearity suggests that
increase after exposure to oxygen plasma, as shown in Fig. 7(a). the adsorption of ammonia is determined statistically and fur-
Fig. 7(a) also compares the response to NH3 between the sen-
sors. When exponential function, exp(−t/τ) was used for fitting,
the response time τ was estimated to be ∼1.1, ∼0.3 and ∼0.5 min
for 900 ◦ C, 900 ◦ C oxygen treated and 1200 ◦ C sensors, respec-
tively. The fittings with one variable were quite excellent. In
particular, this response time is not worse than other high-quality
MWNT sensors [4,35,37]. The fast response time was more
remarkable considering the geometry of the device. Most of
the conventional sensor probes were freely exposed towards the
gas flow, and therefore, the sensing probes could quickly estab-
lish contact with the gases, and the response time depends on the
dynamics of the moving gases. On the contrary, our vertical nano
channel structure requires the diffusion of gas molecules deep
into the concave nano channels for adsorption. This will degrade
the response time as well as the sensitivity. The shorter response
time in the oxygen adsorbed CNT sensors suggests the positive
role of oxygen in the kinetics of NH3 molecules adsorption, but Fig. 8. Switching of the 900 ◦ C sensor measured at different NH3 concentra-
the effect was negative with the sensitivity of the sensors. tions.
N.D. Hoa et al. / Sensors and Actuators B 127 (2007) 447–454 453

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[26] Y.S. Cho, I.K. Song, W.S. Im, G.S. Choi, D.J. Kim, Synthesis mechanism [37] N.H. Quang, M.V. Trinh, B.H. Lee, J.S. Huh, Effect of NH3 on the electrical
of flaked carbon nanotubes formed on an anodic aluminum oxide template properties of single-walled carbon nanotube bundles, Sens. Actuators B 113
examined via transmission electron microscopy, J. Korean Phys. Soc. 47 (2006) 341–346.
(2005) 344–347. [38] N.D. Hoa, N.V. Quy, Y.S. Cho, D.J. Kim, SWNTs and SnO2 compos-
[27] W.L. Xu, M.J. Zheng, S. Wu, W.Z. Shen, Effects of high-temperature ite as a high performance ammonia gas sensor, Phys. Stat. Sol. (A), in
annealing on structure and optical properties of highly ordered porous press.
alumina membranes, Appl. Phys. Lett. 85 (2004) 4364–4366.
[28] H. Araki, T. Katayama, K. Yoshino, Preparation of straight multiwalled
Biographies
carbon nanotube bundles, J. Phys. D: Appl. Phys. 35 (2002) 1076–1079.
[29] K. Yu, Z. Zhu, Y. Zhang, Q. Li, W. Wang, L. Luo, X. Yu, H. Ma, Z. Li,
T. Feng, Change of surface morphology and field emission property of Nguyen Duc Hoa received the degree of master of science in materials sci-
carbon nanotubes films treated using a hydrogen plasma, Appl. Surf. Sci. ence at Hanoi University of Technology (HUT), Vietnam in 2003. He is
225 (2004) 380–388. now in PhD course in materials science and engineering, Chungnam Nat.
[30] G.S. Choi, Y.S. Hong, J.B. Park, K.H. Son, D.J. Kim, Carbon nanotubes Univ., Korea. His research interests are nano-materials fabrication, character-
synthesized by Ni-assisted atmospheric pressure thermal chemical vapor ization and application to electronic device, gas sensor and biosensor. Contact:
deposition, J. Appl. Phys. 91 (2002) 3847–3854. hoa273@yahoo.com.
[31] O.J. Lee, S.K. Hwang, S.H. Jeong, P.S. Lee, K.H. Lee, Synthesis of car- Nguyen Van Quy received the degree of master of materials science and engi-
bon nanotubes with identical dimensions using an anodic aluminum oxide neering at Chungnam Nat. Univ., Korea in 2005. He is now in PhD Scholar
template on a silicon wafer, Synth. Met. 148 (2005) 263–266. course in materials science and engineering, Chungnam Nat. Univ., Korea. His
[32] F. Hoshi, K. Tsugawa, A. Goto, T. Ishikura, S. Yamashita, M. Yumura, current interests include fabrication, characterization of carbon nanotube and
T. Hirao, K. Oura, Y. Koga, Field emission and structure of aligned car- its application to nano electronic devices of field emitter and sensor. Contact:
bon nanofibers deposited by ECR-CVD plasma method, Diamond Related quynguyenh@yahoo.com.
Mater. 10 (2001) 254–259.
[33] C.S. Chang, S. Chattopadhyay, L.C. Chen, K.H. Chen, C.W. Chen, Y.F. Yousuk Cho received his PhD in materials science and engineering at Chungnam
Chen, R. Collazo, Z. Sitar, Band-gap dependence of field emission from Nat. Univ., Korea in 2007. He is now at a post doctor in nano materials and
one-dimensional nanostructures grown on n-type and p-type silicon sub- application lab. at Chungnam Nat. Univ. His current interests are functionalizing
strates, Phys. Rev. B 68 (1–5) (2003) 125322. of CNTs and its application to field emitter, sensor and solar cell devices. Contact:
[34] H. Chang, J.D. Lee, S.M. Lee, Y.H. Lee, Adsorption of NH3 and NO2 yousuk@cnu.ac.kr.
molecules on carbon nanotubes, Appl. Phys. Lett. 79 (2001) 3863–3865. Dojin Kim received his PhD in materials science and engineering at University
[35] R. Ionescu, E.H. Espinosa, E. Sotter, E. Llobet, X. Vilanova, X. Correig, of Southern California, USA in 1989. He is a professor of School of Nanotech-
A. Felten, C. Bittencourt, G. Van Lier, J.-C. Charlier, J.J. Pireaux, Oxygen nology and Department of Materials Science and Engineering at Chungnam
functionalisation of MWNT and their use as gas sensitive thick-film layers, Nat. Univ., Korea. His current research interests are carbon nanotube synthesis
Sens. Actuators B 113 (2006) 36–46. and applications to electronic devices of field emitters, solar cells, gas sensors,
[36] D. Kang, N. Park, J.H. Ko, E. Bae, W. Park, Oxygen-induced p-type doping etc. Also interested in III–V magnetic semiconductors growth and electrical
of a long individual single-walled carbon nanotube, Nanotechnology 16 characterizations. Contact: dojin@cnu.ac.kr.
(2005) 1048–1052.

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