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SEMICONDUCTOR TECHNICAL DATA

  


  
 "     #"
 #"#" " !" J SUFFIX

$" "" #"#"


CERAMIC PACKAGE
16 CASE 620–10
1
High–Performance Silicon–Gate CMOS
The MC54/74HC589A is similar in function to the HC597, which is not a
3–state device. The device inputs are compatible with standard CMOS N SUFFIX
outputs, with pullup resistors, they are compatible with LSTTL outputs. 16 PLASTIC PACKAGE
This device consists of an 8–bit storage latch which feeds parallel data to CASE 648–08
1
an 8–bit shift register. Data can also be loaded serially (see Function Table).
The shift register output, QH, is a three–state output, allowing this device to
be used in bus–oriented systems.
D SUFFIX
The HC589A directly interfaces with the Motorola SPI serial data port on 16 SOIC PACKAGE
CMOS MPUs and MCUs. CASE 751B–05
1
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V 16
DT SUFFIX
TSSOP PACKAGE
• Low Input Current: 1 µA 1 CASE 948F–01
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A ORDERING INFORMATION
• Chip Complexity: 526 FETs or 131.5 Equivalent Gates MC54HCXXXAJ Ceramic
MC74HCXXXAN Plastic
MC74HCXXXAD SOIC
MC74HCXXXADT TSSOP
LOGIC DIAGRAM

SERIAL
DATA SA
14 PIN ASSIGNMENT
INPUT
B 1 16 VCC

15 C 2 15 A
A
1 D 3 14 SA
B
2 SERIAL SHIFT/
C E 4 13 PARALLEL LOAD
VCC = PIN 16
PARALLEL 3
D GND = PIN 8 F 5 12 LATCH CLOCK
DATA
4 DATA SHIFT
INPUTS E G 6 11 SHIFT CLOCK
5 LATCH REGISTER
F H 7 10 OUTPUT ENABLE
6
G SERIAL GND 8 9 QH
7 9
H QH DATA
OUTPUT
12
LATCH CLOCK

11
SHIFT CLOCK
SERIAL SHIFT/ 13
PARALLEL LOAD
10
OUTPUT ENABLE

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

10/95

 Motorola, Inc. 1995 1 REV 0


ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC54/74HC589A
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter Value Unit This device contains protection

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V circuitry to guard against damage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
due to high static voltages or electric
Vin DC Input Voltage (Referenced to GND) – 1.5 to VCC + 1.5 V fields. However, precautions must

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V be taken to avoid applications of any

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
voltage higher than maximum rated
Iin DC Input Current, per Pin ± 20 mA voltages to this high–impedance cir-

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Iout DC Output Current, per Pin ± 35 mA cuit. For proper operation, Vin and

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vout should be constrained to the
ICC DC Supply Current, VCC and GND Pins ± 75 mA v
range GND (Vin or Vout) VCC. v
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic or Ceramic DIP† 750 mW

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SOIC Package† 500 tied to an appropriate logic voltage
TSSOP Package† 450 level (e.g., either GND or VCC).

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Unused outputs must be left open.
Tstg Storage Temperature – 65 to + 150 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Plastic DIP, SOIC or TSSOP Package) 260

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Ceramic DIP) 300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SOIC Package: – 7 mW/_C from 65_ to 125_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TA Operating Temperature, All Package Types – 55 + 125 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf Input Rise and Fall Time VCC = 2.0 V 0 1000 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
VCC = 3.0 V 0 TBD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 400

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ
v ÎÎÎ
VCC – 55 to

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter Test Conditions V 25_C 85_C 125_C Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v
VIH Minimum High–Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 1.5 1.5 1.5 V
Voltage |Iout| 20 µA 3.0 2.1 2.1 2.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VIL
v
Maximum Low–Level Input Vout = 0.1 V or VCC – 0.1 V 2.0 0.5 0.5 0.5 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Voltage |Iout| 20 µA 3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 6.0 1.8 1.8 1.8

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VOH Minimum High–Level Output V
v
Vin = VIH or VIL 2.0 1.9 1.9 1.9
20 µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Voltage |Iout| 4.5 4.4 4.4 4.4
6.0 5.9 5.9 5.9

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ
v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin = VIH or VIL |Iout| 2.4 mA 3.0 2.48 2.34 2.20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
|Iout| 6.0 mA 4.5 3.98 3.84 3.70
|Iout| 7.8 mA 6.0 5.48 5.34 5.20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VOL
v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Low–Level Output Vin = VIH 2.0 0.1 0.1 0.1 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Voltage |Iout| 20 µA 4.5 0.1 0.1 0.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 0.1 0.1 0.1
v
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin = VIH or VIL |Iout| 2.4 mA 3.0 0.26 0.33 0.40

v
|Iout| 6.0 mA 4.5 0.26 0.33 0.40

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
|Iout| 7.8 mA 6.0 0.26 0.33 0.40

MOTOROLA 2 High–Speed CMOS Logic Data


DL129 — Rev 6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MC54/74HC589A

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v v
VCC – 55 to

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter Test Conditions V 25_C 85_C 125_C Unit
± 0.1 ± 1.0 ± 1.0 µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0
± 0.5 ± 5.0 ± 10 µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IOZ Maximum Three–State Leakage Output in High–Impedance State 6.0
Current Vin = VIL or VIH

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vout = VCC or GND

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ICC Maximum Quiescent Supply Vin = VCC or GND 6.0 4 40 160 µA
Current (per Package) Iout = 0 µA

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ
v ÎÎÎ
Guaranteed Limit
VCC – 55 to

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter V 25_C 85_C 125_C Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fmax Maximum Clock Frequency (50% Duty Cycle) 2.0 6.0 4.8 4.0 MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Figures 2 and 8) 3.0 TBD TBD TBD
4.5 30 24 20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 35 28 24

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH, Maximum Propagation Delay, Latch Clock to QH 2.0 175 225 275 ns
tPHL (Figures 1 and 8) 3.0 100 110 125

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 40 50 60

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 30 40 50
tPLH, Maximum Propagation Delay, Shift Clock to QH 2.0 160 200 240 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL (Figures 2 and 8) 3.0 90 130 160

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 30 40 48
6.0 25 30 40

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLH, Maximum Propagation Delay, Serial Shift/Parallel Load to QH 2.0 160 200 240 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPHL (Figures 4 and 8) 3.0 90 130 160
4.5 30 40 48

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 25 30 40

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPLZ, Maximum Propagation Delay, Output Enable to QH 2.0 150 170 200 ns
tPHZ (Figures 3 and 9) 3.0 80 100 130

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 4.5 27 30 40

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 23 25 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZL, Maximum Propagation Delay, Output Enable to QH 2.0 150 170 200 ns
tPZH (Figures 3 and 9) 3.0 80 100 130

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 27 30 40
6.0 23 25 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTLH, Maximum Output Transition Time, Any Output 2.0 60 75 90 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL (Figures 1 and 8) 3.0 TBD TBD TBD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 12 15 18
6.0 10 13 15

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cin Maximum Input Capacitance — 10 10 10 pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout Maximum Three–State Output Capacitance (Output in — 15 15 15 pF
High–Impedance State)
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V


CPD Power Dissipation Capacitance (Per Package)* 50 pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).

High–Speed CMOS Logic Data 3 MOTOROLA


DL129 — Rev 6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MC54/74HC589A

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (Input tr = tf = 6 ns)

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v v
VCC – 55 to

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol Parameter V 25_C 85_C 125_C Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tsu Minimum Setup Time, A–H to Latch Clock 2.0 100 125 150 ns
(Figure 5) 3.0 TBD TBD TBD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 4.5 20 25 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 17 21 26

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tsu Minimum Setup Time, Serial Data Input SA to Shift Clock 2.0 100 125 150 ns
(Figure 6) 3.0 TBD TBD TBD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 20 25 30
6.0 17 21 26

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tsu Minimum Setup Time, Serial Shift/Parallel Load to Shift Clock 2.0 100 125 150 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Figure 7) 3.0 TBD TBD TBD
4.5 20 25 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 6.0 17 21 26

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
th Minimum Hold Time, Latch Clock to A–H 2.0 25 30 40 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Figure 5) 3.0 TBD TBD TBD
4.5 5 6 8

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 5 6 7

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
th Minimum Hold Time, Shift Clock to Serial Data Input SA 2.0 5 5 5 ns
(Figure 6) 3.0 5 5 5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 5 5 5
6.0 5 5 5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw Minimum Pulse Width, Shift Clock 2.0 75 95 110 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Figure 2) 3.0 TBD TBD TBD
4.5 15 19 23

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 6.0 13 16 19

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw Minimum Pulse Width, Latch Clock 2.0 80 100 120 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Figure 1) 3.0 TBD TBD TBD
4.5 16 20 24

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
6.0 14 17 20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tw Minimum Pulse Width, Serial Shift/Parallel Load 2.0 80 100 120 ns
(Figure 4) 3.0 TBD TBD TBD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 16 20 24
6.0 14 17 20

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf Maximum Input Rise and Fall Times 2.0 1000 1000 1000 ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(Figure 1) 3.0 TBD TBD TBD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
4.5 500 500 500
6.0 400 400 400
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

MOTOROLA 4 High–Speed CMOS Logic Data


DL129 — Rev 6
MC54/74HC589A

FUNCTION TABLE
Inputs Resulting Function
Serial Parallel Data Shift
Output Serial Shift/ Latch Shift Input Inputs Latch Register Output
Operation Enable Parallel Load Clock Clock SA A–H Contents Contents QH
Force output into high H X X X X X X X Z
impedance state
Load parallel data into L H L, H, X a–h a–h U U
data latch
Transfer latch contents to L L L, H, X X X U LRN → SRN LRH
shift register
Contents of input latch L H L, H, L, H, X X U U U
and shift register are
unchanged
Load parallel data into L L X X a–h a–h a–h h
data latch and shift
register
Shift serial data into shift L H X D X * SRA = D, SRG → SRH
register SRN → SRN+1
Load parallel data in data L H D a–h a–h SRA = D, SRG → SRH
latch and shift serial data SRN → SRN+1
into shift register
LR = latch register contents U = remains unchanged
SR = shift register contents X = don’t care
a–h = data at parallel data inputs A–H Z = high impedance
D = data (L, H) at serial data input SA * = depends on Latch Clock input

High–Speed CMOS Logic Data 5 MOTOROLA


DL129 — Rev 6
MC54/74HC589A

SWITCHING WAVEFORMS

tr tf
1/fmax
VCC
90% tw
LATCH CLOCK 50% VCC
10% GND SHIFT CLOCK
tw 50%
GND

tPLH tPHL
tPLH tPHL
90%
QH 50%
10% QH 50%
tTLH tTHL

Figure 1. (Serial Shift/Parallel Load = L) Figure 2. (Serial Shift/Parallel Load = H)

VCC
OUTPUT 50%
ENABLE GND tw
tPZL tPLZ VCC
HIGH SERIAL SHIFT/ 50% 50%
50% IMPEDANCE PARALLEL LOAD GND
QH
10% VOL tPLH tPHL
tPZH tPHZ
90% VOH QH 50%
QH 50% HIGH
IMPEDANCE

Figure 3. Figure 4.

DATA VALID DATA VALID


VCC VCC
A–H 50% SA 50%
GND GND
tsu th tsu th

LATCH CLOCK 50% SHIFT CLOCK 50%

Figure 5. Figure 6.

TEST POINT

VCC OUTPUT
SERIAL SHIFT/ 50% DEVICE
PARALLEL LOAD GND UNDER
TEST CL*
tsu

SHIFT CLOCK 50%

* Includes all probe and jig capacitance

Figure 7. Figure 8. Test Circuit

MOTOROLA 6 High–Speed CMOS Logic Data


DL129 — Rev 6
MC54/74HC589A

TEST CIRCUIT

TEST POINT
CONNECT TO VCC WHEN
OUTPUT 1 kΩ
TESTING tPLZ AND tPZL.
DEVICE CONNECT TO GND WHEN
UNDER TESTING tPHZ AND tPZH.
TEST CL*

* Includes all probe and jig capacitance

Figure 9.

PIN DESCRIPTIONS

DATA INPUTS Shift Clock (Pin 11)


Serial shift clock. A low–to–high transition on this input
A, B, C, D, E, F, G, H (Pins 15, 1, 2, 3, 4, 5, 6, 7) shifts data on the serial data input into the shift register and
Parallel data inputs. Data on these inputs are stored in the data in stage H is shifted out QH, being replaced by the data
data latch on the rising edge of the Latch Clock input. previously stored in stage G.

SA (Pin 14) Latch Clock (Pin 12)


Data latch clock. A low–to–high transition on this input
Serial data input. Data on this input is shifted into the shift
loads the parallel data on inputs A–H into the data latch.
register on the rising edge of the Shift Clock input if Serial
Shift/Parallel Load is high. Data on this input is ignored when Output Enable (Pin 10)
Serial Shift/Parallel Load is low.
Active–low output enable A high level applied to this pin
forces the QH output into the high impedance state. A low
CONTROL INPUTS level enables the output. This control does not affect the
state of the input latch or the shift register.
Serial Shift/Parallel Load (Pin 13)
OUTPUT
Shift register mode control. When a high level is applied to
this pin, the shift register is allowed to serially shift data. QH (Pin 9)
When a low level is applied to this pin, the shift register ac- Serial data output. This pin is the output from the last stage
cepts parallel data from the data latch. of the shift register. This is a 3–state output.

High–Speed CMOS Logic Data 7 MOTOROLA


DL129 — Rev 6
MC54/74HC589A

TIMING DIAGRAM

SHIFT CLOCK

SERIAL DATA
INPUT, SA

OUTPUT ENABLE

SERIAL SHIFT/
PARALLEL LOAD

LATCH CLOCK

A L H L L

B L L L L

C L H L L

PARALLEL D L L L L
DATA
INPUTS
E L H L H

F L H L H

G L L L L

ÉÉÉÉÉ
H L
ÉÉÉÉÉ H H H

ÉÉÉÉÉ
QH
ÉÉÉÉÉ
HIGH IMPEDANCE

SERIAL SHIFT
H L H H L

SERIAL SHIFT
H L H L H L L

SERIAL SHIFT
L H L H H
SERIAL
SHIFT

RESET LATCH LOAD LATCH PARALLEL LOAD LOAD LATCH PARALLEL LOAD PARALLEL LOAD, LATCH
AND SHIFT REGISTER SHIFT REGISTER SHIFT REGISTER AND SHIFT REGISTER

MOTOROLA 8 High–Speed CMOS Logic Data


DL129 — Rev 6
MC54/74HC589A

LOGIC DETAIL

10
OUTPUT ENABLE
14
SA

11
SHIFT CLOCK
SERIAL SHIFT/ 13
PARALLEL LOAD
12
LATCH CLOCK STAGE A

15
A D Q
C S
D
C Q
R

STAGE B

1
B D Q
C S
D
C Q
R

PARALLEL
DATA 2
INPUTS C STAGE C*

3
D STAGE D*

4
E STAGE E*

5
F STAGE F*

6
G STAGE G*

STAGE H
VCC
7
H D Q
C S
D 9
C Q QH
R

*NOTE: Stages C thru G (not shown in detail) are identical to stages A and B above.

High–Speed CMOS Logic Data 9 MOTOROLA


DL129 — Rev 6
MC54/74HC589A

OUTLINE DIMENSIONS

J SUFFIX
–A CERAMIC PACKAGE
– CASE 620–10
NOTES:
16 9 ISSUE V 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
–B 2. CONTROLLING DIMENSION: INCH.
– 3. DIMENSION L TO CENTER OF LEAD WHEN
1 8 FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE
C L THE LEAD ENTERS THE CERAMIC BODY.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.750 0.785 19.05 19.93
–T B 0.240 0.295 6.10 7.49

SEATING N K C — 0.200 — 5.08
PLANE D 0.015 0.020 0.39 0.50
E 0.050 BSC 1.27 BSC
F 0.055 0.065 1.40 1.65
E M G 0.100 BSC 2.54 BSC
J 0.008 0.015 0.21 0.38
F G J 16 PL K 0.125 0.170 3.18 4.31
D 16 PL 0.25 (0.010) M T B S L 0.300 BSC 7.62 BSC
M 0° 15° 0° 15°
0.25 (0.010) M T A S N 0.020 0.040 0.51 1.01

N SUFFIX
–A PLASTIC PACKAGE NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
– CASE 648–08 Y14.5M, 1982.
ISSUE R 2. CONTROLLING DIMENSION: INCH.
16 9 3. DIMENSION L TO CENTER OF LEADS WHEN
B FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
1 8 5. ROUNDED CORNERS OPTIONAL.
INCHES MILLIMETERS
F DIM MIN MAX MIN MAX
C L A 0.740 0.770 18.80 19.55
B 0.250 0.270 6.35 6.85
S C 0.145 0.175 3.69 4.44
D 0.015 0.021 0.39 0.53
SEATING F 0.040 0.070 1.02 1.77
–T PLANE G 0.100 BSC 2.54 BSC
– H 0.050 BSC 1.27 BSC
K M J
H J 0.008 0.015 0.21 0.38
G K 0.110 0.130 2.80 3.30
D 16 PL L 0.295 0.305 7.50 7.74
M 0° 10° 0° 10°
0.25 (0.010) M T A M S 0.020 0.040 0.51 1.01

D SUFFIX
PLASTIC SOIC PACKAGE
–A CASE 751B–05
– ISSUE J NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
16 9 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
–B MOLD PROTRUSION.
P 8 PL 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

1 8 0.25 (0.010) M B M PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
G MAXIMUM MATERIAL CONDITION.

MILLIMETERS INCHES
DIM MIN MAX MIN MAX
F A 9.80 10.00 0.386 0.393
K R X 45° B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
C F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
–T

SEATING M J J 0.19 0.25 0.008 0.009
PLANE K 0.10 0.25 0.004 0.009
D 16 PL M 0° 7° 0° 7°
0.25 (0.010) M T B S A S P 5.80 6.20 0.229 0.244
R 0.25 0.50 0.010 0.019

MOTOROLA 10 High–Speed CMOS Logic Data


DL129 — Rev 6
MC54/74HC589A

OUTLINE DIMENSIONS

DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948F–01
ISSUE O
16X K REF

ÉÉ
ÇÇ
0.10 (0.004) M T U S V S
NOTES:

ÇÇ
ÉÉ
0.15 (0.006) T U S
K 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

ÇÇ
ÉÉ
K1 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.

ÇÇ
ÉÉ
16 9 PROTRUSIONS OR GATE BURRS. MOLD FLASH OR
2X L/2 J1 GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
B SECTION N–N FLASH OR PROTRUSION. INTERLEAD FLASH OR
L PROTRUSION SHALL NOT EXCEED
–U– 0.25 (0.010) PER SIDE.
J
PIN 1 5. DIMENSION K DOES NOT INCLUDE DAMBAR
IDENT. PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K
1 8 DIMENSION AT MAXIMUM MATERIAL CONDITION.
N 6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
0.25 (0.010) 7. DIMENSION A AND B ARE TO BE DETERMINED AT
0.15 (0.006) T U S DATUM PLANE –W–.
A M
–V– MILLIMETERS INCHES
DIM MIN MAX MIN MAX
N A 4.90 5.10 0.193 0.200
B 4.30 4.50 0.169 0.177
F C ––– 1.20 ––– 0.047
D 0.05 0.15 0.002 0.006
DETAIL E F 0.50 0.75 0.020 0.030
G 0.65 BSC 0.026 BSC
H 0.18 0.28 0.007 0.011
J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
C –W– K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
0.10 (0.004) M 0_ 8_ 0_ 8_
–T– SEATING H DETAIL E
PLANE D G

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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*MC54/74HC58A9/D*
◊ CODELINE MC54/74HC58A9/D
High–Speed CMOS Logic Data 11 MOTOROLA
DL129 — Rev 6

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