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2 SC 4131
2 SC 4131
Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 100 V ICBO VCB=100V 10max µA 3.45 ±0.2
µA
5.5
9.5±0.2
VCEO 50 V IEBO VEB=15V 10max
VEBO 15 V V(BR)CEO IC=25mA 50min V
23.0±0.3
ø3.3±0.2
IC 15(Pulse25) A hFE VCE=1V, IC=5A 60 to 360 a
1.6
IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V b
A
3.0
PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V
3.3
Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz 1.75 0.8
16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 210typ pF
1.05 +0.2
-0.1
15 1.3 15
85mA
80mA
12
40mA 10
8
25mA
mp)
)
)
0.5
mp
emp
15mA
15A 5
e Te
Te
se T
se
4
(Cas
10A
(Ca
(Ca
I B =7mA
˚C
–30˚C
25˚C
5A
125
3A
I C =1 A
0 0 0
0 2 4 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =1V) (V C E =1V)
1000 1000 3
12 5˚ C
D C Cur r ent Gai n h F E
– 3 0 ˚C 1
0.5
100 100
70 70 0.3
0.02 0.1 1 10 15 0.02 0.1 1 10 15 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
=80mA s
t o n• t s t g • t f (µ s)
10
10
m
0m
Collecto r Curr ent I C (A)
10
s
s 40
DC
W
1
ith
5
In
tf
Switching Time
fin
ite
0.5
he
at
si
20
nk
1
t on Without Heatsink
Natural Cooling Without Heatsink
0.1 3.5
0.08 0.4 0
0.1 0.5 1 5 10 3 5 10 50 100 0 50 100 150
Collector C urrent I C (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
90