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 ESM6045AV

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE

■ VERY LOW Rth JUNCTION CASE
■ SPECIFIED ACCIDENTAL OVERLOAD
AREAS
■ ISOLATED CASE (2500V RMS)
■ EASY TO MOUNT
■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:
■ MOTOR CONTROL
■ SMPS & UPS

■ WELDING EQUIPMENT

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -5 V) 1000 V
VCEO(sus) Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 72 A
ICM Collector Peak Current (t p = 10 ms) 108 A
IB Base Current 8 A
I BM Base Peak Current (t p = 10 ms) 16 A
Pt ot Tot al Dissipation at T c = 25 o C 250 W
o
T stg Storage Temperature -55 to 150 C
o
Tj Max. Ope rating Junction Temperature 150 C
o
VI SO Insulation Withstand Voltage (AC-RMS) 2500 C

September 1997 1/7

ESM6045AV

THERMAL DATA
o
R thj-ca se Thermal Resistance Junction-case Max 0.5 C/W
R t hc-h Thermal Resistance Case-heatsink With Conductive
o
Grease Applied Max 0.05 C/W

o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER # Collecto r Cut-of f VCE = VCEV 1. 5 mA
Current (RBE = 5 Ω) VCE = VCEV T j = 100 o C 22 mA
I CEV # Collecto r Cut-of f VCE = VCEV 1 mA
Current (VBE = -5) VCE = VCEV T j = 100 o C 15 mA
I EBO # Emitter Cut-off Current VEB = 5 V 1 mA
(I C = 0)
VCEO(SUS) * Collecto r-Emitter I C = 0.2 A L = 25 mH 450 V
Sustaining Voltage Vc lamp = 450 V
hFE ∗ DC Current Gain I C = 60 A VCE = 5 V 150
V CE(sat )∗ Collecto r-Emitter IC = 50 A IB = 1A 1.2 V
Saturation Voltage IC = 50 A IB = 1A Tj = 100 o C 1.6 2 V
IC = 60 A IB = 2.4 A 1.3 V
IC = 60 A IB = 2.4 A T j = 100 oC 1.55 2 V
VBE( sat) ∗ Base-Emitter I C = 60 A IB = 2.4 A 2.1 V
Saturation Voltage I C = 60 A IB = 2.4 A T j = 100 oC 2.15 3 V
diC /dt Rate of Rise of VCC = 300 V RC = 0 tp = 3 µs 450 500 A/µs
On-state Collector I B1 = 3.6 A Tj = 100 o C
VCE (3 µs)•• Collecto r-Emitter VCC = 300 V R C = 5 Ω 4 7 V
Dynamic Voltage I B1 = 3.6 A T j = 100 o C
V CE (5 µs)•• Collector-Emitte r VCC = 300 V R C = 5 Ω 2.5 4 V
Dynamic Voltage I B1 = 3.6 A T j = 100 o C
ts Storage Time I C = 60 A VCC = 50 V 4.6 6 µs
tf Fall Time VBB = -5 V R BB = 0.3 Ω 0.4 0. 6 µs
tc Cross-over Time Vc lamp = 450 V I B1 = 2.4 A 1.2 2 µs
L = 0. 04 mH T j = 100 o C
VCEW Maximum Collector I CW off = 72 A I B1 = 2.4 A 450 V
Emitter Voltage VBB = -5 V VCC = 50 V
With ou t Snubber L = 35 µH RBB = 0.3 Ω
T j = 125 o C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction

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 ESM6045AV

Safe Operating Areas Thermal Impedance

Derating Curve Collector-emitter Voltage Versus

base-emitter Resistance

Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage

3/7
ESM6045AV

Reverse Biased SOA Foward Biased SOA

Reverse Biased AOA Forward Biased AOA

Switching Times Inductive Load Switching Times Inductive Load Versus

Temperature

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 ESM6045AV

Dc Current Gain Turn-on Switching Test Circuit

Turn-on Switching Waveforms

Turn-off Switching Test Circuit Turn-off Switching Waveforms

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ESM6045AV

ISOTOP MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322

G A

B
O

N
D

F
H

J
C
K

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 ESM6045AV

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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. ..

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