Electronic Circuits

FETs vs. BJTs

Similarities:
Prof. Nizamettin AYDIN • Amplifiers
• Switching devices
• Impedance matching circuits
naydin@yildiz.edu.tr
Differences:
http://www.yildiz.edu.tr/~naydin • FETs are voltage controlled devices.
• BJTs are current controlled devices.
• FETs have a higher input impedance.
• BJTs have higher gains.
Dr. Gökhan Bilgin • FETs are less sensitive to temperature variations and are more easily
integrated on ICs.
gokhanb@ce.yildiz.edu.tr • FETs are generally more static sensitive than BJTs.

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JFET Construction
FET Types
There are two types of JFETs

•n-channel
•p-channel
•JFET: Junction FET
The n-channel is more widely used.
•MOSFET: Metal–Oxide–Semiconductor FET

D-MOSFET: Depletion MOSFET

E-MOSFET: Enhancement MOSFET

There are three terminals:

•Drain (D) and Source (S) are connected to the n-channel

•Gate (G) is connected to the p-type material

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JFET Operation: The Basic Idea JFET Operating Characteristics

JFET operation can be compared to a water spigot.
There are three basic operating conditions for a JFET:
The source of water pressure is the
accumulation of electrons at the
• VGS = 0, VDS increasing to some positive value
negative pole of the drain-source
voltage. • VGS < 0, VDS at some positive value
• Voltage-controlled resistor
The drain of water is the electron
deficiency (or holes) at the positive
pole of the applied voltage.

The control of flow of water is the

gate voltage that controls the width
of the n-channel and, therefore, the
flow of charges from source to
drain.

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Copyright 2000 N. AYDIN. All rights

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 JFET Operating Characteristics: VGS = 0 V JFET Operating Characteristics: Pinch Off
Three things happen when VGS = 0 and VDS is increased from 0 to a more positive
voltage
• The depletion region between p-gate If VGS = 0 and VDS is further
and n-channel increases as electrons increased to a more positive voltage,
from n-channel combine with holes then the depletion zone gets so large
from p-gate. that it pinches off the n-channel.

• Increasing the depletion region, This suggests that the current in the
decreases the size of the n-channel n-channel (ID) would drop to 0A,
which increases the resistance of the but it does just the opposite–as VDS
n-channel. increases, so does ID.

• Even though the n-channel resistance

is increasing, the current (ID) from
source to drain through the n-
channel is increasing. This is because
VDS is increasing.

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JFET Operating Characteristics:

Characteristics: Saturation JFET Operating Characteristics

At the pinch-off point:

• Any further increase in VGS does not As VGS becomes more negative, the
produce any increase in ID. VGS at depletion region increases.
pinch-off is denoted as Vp.

• ID is at saturation or maximum. It is
referred to as IDSS.

• The ohmic value of the channel is

maximum.

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JFET Operating Characteristics JFET Operating Characteristics:

Voltage--Controlled Resistor
Voltage
As VGS becomes more negative:
The region to the left of the
• The JFET experiences pinch-off point is called the
pinch-off at a lower voltage ohmic region.
(VP).
The JFET can be used as a
• ID decreases (ID < IDSS) even variable resistor, where VGS
though VDS is increased. controls the drain-source
resistance (rd). As VGS becomes
• Eventually ID reaches 0 A. more negative, the resistance
VGS at this point is called Vp (rd) increases.
or VGS(off)..
ro
rd =
Also note that at high levels of VDS the JFET reaches a breakdown situation. ID 2
 V 
increases uncontrollably if VDS > VDSmax.  1 − GS 
 VP 

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Copyright 2000 N. AYDIN. All rights

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 p-Channel JFETS p-Channel JFET Characteristics

The p-channel JFET behaves the As VGS increases more positively

same as the n-channel JFET,
except the voltage polarities and • The depletion zone
current directions are reversed. increases
• ID decreases (ID < IDSS)
• Eventually ID = 0 A

Also note that at high levels of VDS the JFET reaches a breakdown situation: ID
increases uncontrollably if VDS > VDSmax.

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N-Channel JFET Symbol JFET Transfer Characteristics

The transfer characteristic of input-to-output is not as straightforward in

a JFET as it is in a BJT.

In a BJT, β indicates the relationship between IB (input) and IC (output).

In a JFET, the relationship of VGS (input) and ID (output) is a little more

complicated:

2
 
I D = I DSS  1 −
VGS 
 
 V P 

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JFET Transfer Curve Plotting the JFET Transfer Curve

Using IDSS and Vp (VGS(off)) values found in a specification sheet, the transfer
curve can be plotted according to these three steps:

Step 1
2
 V 
I D = I DSS  1 − GS 
This graph shows the  VP 
Solving for VGS = 0V ID = IDSS
value of ID for a
given value of VGS.
Step 2
2
 V 
I D = I DSS  1 − GS 
 VP 
Solving for VGS = Vp (VGS(off)) ID = 0A

Step 3
2
 VGS 
Solving for VGS = 0V to Vp I D = I DSS  1 − 
 VP 

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Copyright 2000 N. AYDIN. All rights

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 JFET Specifications Sheet JFET Specifications Sheet
Electrical Characteristics
Maximum Ratings

more…

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Case and Terminal Identification Testing JFETs

• Curve Tracer
A curve tracer displays the ID versus VDS graph for
various levels of VGS.

• Specialized FET Testers

These testers show IDSS for the JFET under test.

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MOSFETs Depletion--Type MOSFET Construction

Depletion
MOSFETs have characteristics similar to JFETs and additional
characteristics that make then very useful.

There are two types of MOSFETs: The Drain (D) and Source (S)
connect to the to n-doped regions.
• Depletion-Type
Depletion- These n-doped regions are
• Enhancement--Type
Enhancement connected via an n-channel. This
n-channel is connected to the Gate
(G) via a thin insulating layer of
SiO2.

The n-doped material lies on a p-

doped substrate that may have an
additional terminal connection
called Substrate (SS).

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 Basic MOSFET Operation D-Type MOSFET in Depletion Mode

A depletion-type MOSFET can operate in two modes:

Depletion Mode
• Depletion mode
• Enhancement mode The characteristics
are similar to a JFET.

• When VGS = 0 V, ID = IDSS

• When VGS < 0 V, ID < IDSS
• The formula used to plot the transfer
curve still applies:
2
 V 
I D = I DSS  1 − GS 
 VP 
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D-Type MOSFET in Enhancement Mode p-Channel D-

D-Type MOSFET
Enhancement Mode

• VGS > 0 V
• ID increases above IDSS
• The formula used to plot
the transfer curve still
applies:
2
 V 
I D = I DSS  1 − GS 
 VP 

Note that VGS is now a positive polarity

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D-Type MOSFET Symbols Specification Sheet

Maximum Ratings

more…

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 Specification Sheet E-Type MOSFET Construction
Electrical Characteristics

• The Drain (D) and Source (S) connect

to the to n-doped regions. These n-
doped regions are connected via an n-
channel

• The Gate (G) connects to the p-doped

substrate via a thin insulating layer of
SiO2

• There is no channel

• The n-doped material lies on a p-doped

substrate that may have an additional
terminal connection called the
Substrate (SS)

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Basic Operation of the E-

E-Type MOSFET E-Type MOSFET Transfer Curve

The enhancement-
enhancement-type MOSFET operates only in the enhancement mode. To determine ID given VGS:
I D = k ( VGS − VT ) 2
• VGS is always positive

• As VGS increases, ID Where:

increases VT = threshold voltage
or voltage at which the
• As VGS is kept constant MOSFET turns on
and VDS is increased,
then ID saturates (IDSS) k, a constant, can be determined by using VDSsat can be calculated by:
and the saturation level, values at a specific point and the formula:
VDSsat is reached VDsat = VGS − VT
I D(ON)
k=
(VGS(ON) − VT) 2

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p-Channel E-Type MOSFETs MOSFET Symbols

The p-channel enhancement-

enhancement-type MOSFET is similar to the n-
channel, except that the voltage polarities and current directions
are reversed.

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Copyright 2000 N. AYDIN. All rights

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 Specification Sheet Specification Sheet
Electrical Characteristics
Maximum Ratings

more…

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Handling MOSFETs VMOS Devices

MOSFETs are very sensitive to static electricity. Because of the very thin
SiO2 layer between the external terminals and the layers of the device, VMOS (vertical MOSFET)
any small electrical discharge can create an unwanted conduction. increases the surface area of
the device.

Protection
Advantages
• Always transport in a static sensitive bag
• VMOS devices handle
• Always wear a static strap when handling MOSFETS higher currents by
• providing more surface
• Apply voltage limiting devices between the gate and source, such as area to dissipate the heat.
back-to-back Zeners to limit any transient voltage.
• VMOS devices also have
faster switching times.

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CMOS Devices Summary Table

CMOS (complementary
MOSFET) uses a p-channel
and n-channel MOSFET;
often on the same substrate as
shown here.

Advantages

• Useful in logic circuit designs

• Higher input impedance
• Faster switching speeds
• Lower operating power levels

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