2SC535

Silicon NPN Epitaxial Planar

ADE-208-1047 (Z)
1st. Edition
Mar. 2001

Application

VHF amplifier, mixer, local oscillator

Outline

TO-92 (2)

1. Emitter
2. Collector
3. Base

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2
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2SC535
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4 V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

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 2SC535
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 30 — — V I C = 10 µA, IE = 0
voltage
Collector to emitter breakdown V(BR)CEO 20 — — V I C = 1 mA, RBE = ∞
voltage
Emitter to base breakdown V(BR)EBO 4 — — V I E = 10 µA, IC = 0
voltage
Collector cutoff current I CBO — — 0.5 µA VCB = 10 V, IE = 0
1
DC current transfer ratio hFE* 60 — 200 VCE = 6 V, IC = 1 mA
Base to emitter voltage VBE — 0.72 — V VCE = 6 V, IC = 1 mA
Collector to emitter saturation VCE(sat) — 0.17 — V I C = 20 mA, IB =4 mA
voltage
Gain bandwidth product fT 450 940 — MHz VCE = 6 V, IC = 5 mA
Collector output capacitance Cob — 0.9 1.2 pF VCB = 10 V, IE = 0, f = 1 MHz
Power gain PG 17 20 — dB VCE = 6 V, IC = 1 mA,
f = 100 MHz
Noise figure NF — 3.5 5.5 dB VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
Input admittance (typ) yie 1.3 + j5.3 mS VCE = 6 V, IC = 1 mA,
f = 100 MHz
Reverse transfer admittance yre –0.078 – j0.41 mS
(typ)
Foward transfer admittance yfe 32 – j10 mS
(typ)
Output admittance (typ) yoe 0.08 + j0.82 mS
Note: 1. The 2SC535 is grouped by h FE as follows.
B C
60 to 120 100 to 200

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2SC535

Maximum Collector Dissipation Curve Typical Output Characteristics

150 20
Collector power dissipation PC (mW)
300
275
250

Collector Current IC (mA)

16 225
200
175
100 150
12 125
100
P
75 C =1
8 00
mW
50 50
4
25 µA
IB = 0

0 50 100 150 0 4 8 12 16 20
Ambient Tmperature Ta (°C) Collector to Emitter Voltage VCE (V)

DC Current Transfer Ratio vs.

Collector Current
Typical Output Characteristics
120
5
50 VCE = 6 V
DC Current Transfer ratio hFE

100
40
Collector Current IC (mA)

4
80
3 30
60

2 20
40

1 10µA 20

IB = 0
0
0 4 8 12 16 20 0.1 0.2 0.5 1.0 2 5 10 20
Collector to Emitter Voltage VCE (V) Collector Current IC (mA)

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 2SC535

Typical Transfer Cahracteristics (1) Typical Transfer Cahracteristics (2)

20 5

VCE = 6 V VCE = 6 V
Collector Current IC (mA)

Collector Current IC (mA)

16 4

12 3

8 2

4 1

0 0
0.6 0.7 0.8 0.6 0.7 0.8
Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V)

Collector Output Capacitance vs.

Collector to Base Voltage
1.5
Collector Output Capacitance Cob (pF)

f = 1 MHz
IE = 0
1.3

1.1

0.9

0.7

0.5
0.3 1.0 3 10 30
Collector to Base Voltage VCB (V)

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2SC535
Gain Bandwidth Product vs.
Collector Current
1,000

Gain Bandwidth Product fT (MHz)

VCE = 6 V
800

600

400

200

0
0.1 0.2 0.5 1.0 2 5 10 20
Collector Current IC (mA)

Noise Figure vs. Collector Current

8
IC = 1 mA
f = 100 MHz
Rg = 50 Ω
Noise figure NF (dB)

0
0.2 0.5 1.0 2 5 10
Collector Current IC (mA)

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 2SC535

Noise Figure vs. Collector to

Noise Figure vs. Signal Source Resistance Emitter Voltage
8 8
VCE = 6 V VCE = 6 V
IC = 1 mA f = 100 MHz
f = 100 MHz Rg = 50 Ω

Noise figure NF (dB)

6
Noise figure NF (dB)

4 4

2 2

0 0
20 50 100 200 500 1,000 1 2 5 10 20
Signal Source Resistance Rg (Ω) Collecter to Emitter Voltage VCE (V)

Input Admittance Characteristics

18
yie = gie + jbie
16 VCE = 6 V
Input Suceptance bie (mS)

14
100 MHz Power Gain Test Circuit
12
150 200
10 f = 200 MHz 100
70
IN D.U.T. 8 150
f = 100 MHz 300 p 0.1 µ 50 MHz
OUT
Rg = 100 Ω 10 p 6 100 5 mA
max Rl = 550 Ω
70 3 mA
3k 4
500 2 mA
0.01 µ 2 50
IC = 1 mA
0.01 µ 0.01 µ
Unit R : Ω 0 2 4 6 8 10 12 14 16 18
VEE VCC C:F Input Conductance gie (mS)

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2SC535

Reverse Transfer Admittance Forward Transfer Admittance

Characteristics Characteristics
Reverse Transfer Conductance gre (mS) Forward Transfer Conductance gfe (mS)
–0.20 –0.16 –0.12 –0.08 –0.04 0 0 20 40 60 80 100 120

Reverse Transfer Suceptance bre (mS)

yfe = gfe + jbfe

Forward Transfer Suceptance bfe (mS)

yre = gre + jbre
VCE = 6 V VCE = 6 V
f = 50 MHz –20
–0.2 IC = 1 mA
70
–40 2 mA
100 –0.4 f = 50 MHz
–60 3 mA
150
–0.6 70
–80
200 5 mA 100
200 150
–0.8 –100
IC = 5 mA 3 2 1
–120
–1.0

Input Admittance vs. Collector

Output Admittance Characteristics to Emitter Voltage
2.4 10
yoe = goe + jboe
VCE = 6 V
Output Suceptance boe (mS)

bie
Input Admittance yie (mS)

2.0
5
IC = 1 mA 2 3 5
1.6 yie = gie + jbie
f = 200 MHz IC = 1 mA
1.2 f = 100 MHz
150 2
gie
0.8 100
70 1.0
0.4
50

0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 1 2 5 10 20
Output Conductance goe (mS) Collector to Emitter Voltage VCE (V)

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 2SC535
Reverse Transfer Admittance vs.
Input Admittance vs. Collector Current Collector to Emitter Voltage
–1.0 –0.1

Reverse Transfer Suceptance bre (mS)

Reverse Transfer Conductance gre (mS)

20
yie = gie + jbie
10 VCE = 6 V
Input Admittance yie (mS)

f = 100 MHz –5 bre –0.05

5
bie
yre = gre + jbre
2 IC = 1 mA
–0.2 f = 100 MHz –0.02

1.0
–0.1 –0.01
0.5 gie gre

0.2 –0.05 –0.005

0.1 0.2 0.5 1.0 2 5 10 1 2 5 10 20
Collector Current IC (mA) Collector to Emitter Voltage VCE (V)

Reverse Transrer Admittance vs. Forward Transfer Admittance vs.

Collector Current Collector to Emitter Voltage
–1.0 –0.1 100
Reverse Transfer Suceptance bre (mS)

Reverse Transfer Conductance gre (mS)

Forward Transfer Admittance yie (mS)

yfe = gfe + jbfe
bre IC = 1 mA
–0.5 –0.05
f = 100 MHz
50
yre = gre + jbre gfe
–0.2 VCE = 6 V –0.02
f = 100 MHz gre
–0.1 –0.01
20
–0.05 –0.005
–bfe
10
–0.02 –0.002

–0.01 –0.001 5
0.1 0.2 0.5 1.0 2 5 10 1 2 5 10 20
Collector Current IC (mA) Collector to Emitter Voltage VCE (V)

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2SC535

Forward Transrer Admittance vs. Output Admittance vs. Collector

Collector Current to Emitter Voltage
100 2.0 0.2
Forward Transrer Admittance yie (mS)

yfe = gfe + jbfe

VCE = 6 V

Output Conductance goe (mS)

Output Suceptance boe (mS)
50 f = 100 MHz goe
1.0 0.1
20 boe
gfe –bfe
10 0.5 0.05
yeo = goe + jboe
5 IC = 1 mA
f = 100 MHz
0.2 0.02
2

1 0.1 0.01
0.1 0.2 0.5 1.0 2 5 10 1 2 5 10 20
Collector Current IC (mA) Collector to Emitter Voltage VCE (V)

Output Admittance vs. Collector Current

2.0

1.0 boe
Output Admittance yoe (mS)

0.5

0.2

0.1
goe
0.05 yoe = goe + jboe
VCE = 6 V
f = 100 MHz
0.02
0.1 0.2 0.5 1.0 2 5 10
Collector Current IC (mA)

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 2SC535

Package Dimensions

As of January, 2001
Unit: mm

4.8 ± 0.4 3.8 ± 0.4

5.0 ± 0.2
2.3 Max
12.7 Min

0.60 Max
0.7

0.5Max 0.5Max

1.27
2.54

Hitachi Code TO-92 (2)

JEDEC Conforms
EIAJ Conforms
Mass (reference value) 0.25 g

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2SC535

Cautions

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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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