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    Gan & Gaas: With Ums Enable

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    Syed Muhammad Nasir Abbas
    The document describes radio frequency (RF) products and foundry solutions for wireless communications across multiple frequency bands, including: - Products such as amplifiers, low noise amplifiers, mixers, and switches for 5G, fixed wireless, backhaul, and indoor applications between 0.5-86 GHz. - Foundry solutions utilizing Gallium Nitride (GaN) and Gallium Arsenide (GaAs) technologies to provide integrated RF front-ends, high power amplifiers, and small form factor packages. - Building blocks and reference designs to enable the development of systems for sub-6 GHz, mmWave, V-band, E-band, and higher frequency applications.

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    Gan & Gaas: With Ums Enable

    Uploaded by

    Syed Muhammad Nasir Abbas
    98 views2 pages
    The document describes radio frequency (RF) products and foundry solutions for wireless communications across multiple frequency bands, including: - Products such as amplifiers, low noise amplifiers, mixers, and switches for 5G, fixed wireless, backhaul, and indoor applications between 0.5-86 GHz. - Foundry solutions utilizing Gallium Nitride (GaN) and Gallium Arsenide (GaAs) technologies to provide integrated RF front-ends, high power amplifiers, and small form factor packages. - Building blocks and reference designs to enable the development of systems for sub-6 GHz, mmWave, V-band, E-band, and higher frequency applications.

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    Upload UMS-FLYER

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    UMS-Flyer_5G_2021

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    The document describes radio frequency (RF) products and foundry solutions for wireless communications across multiple frequency bands, including: - Products such as amplifiers, low noise amplifiers, mixers, and switches for 5G, fixed wireless, backhaul, and indoor applications between 0.5-86 GHz. - Foundry solutions utilizing Gallium Nitride (GaN) and Gallium Arsenide (GaAs) technologies to provide integrated RF front-ends, high power amplifiers, and small form factor packages. - Building blocks and reference designs to enable the development of systems for sub-6 GHz, mmWave, V-band, E-band, and higher frequency applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    98 views2 pages

    Gan & Gaas: With Ums Enable

    Uploaded by

    Syed Muhammad Nasir Abbas
    The document describes radio frequency (RF) products and foundry solutions for wireless communications across multiple frequency bands, including: - Products such as amplifiers, low noise amplifiers, mixers, and switches for 5G, fixed wireless, backhaul, and indoor applications between 0.5-86 GHz. - Foundry solutions utilizing Gallium Nitride (GaN) and Gallium Arsenide (GaAs) technologies to provide integrated RF front-ends, high power amplifiers, and small form factor packages. - Building blocks and reference designs to enable the development of systems for sub-6 GHz, mmWave, V-band, E-band, and higher frequency applications.

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    of 2

    ENABLE

    WITH UMS

    GaN & GaAs


    Products &
    Foundry Mid band & 5G Test & Repeater V, E & D band
    Fixed Wireless
    solutions mmw radio Access Measurement & Indoor Radio Backhaul
    Fronthaul 26, 28, 39, 47 GHz

    Innovative design Technologies Products


    n New CHC6053 26/28GHz GaN n Integrated Front-End 26/28GHz
    5G OFDM compliant n GH15 High power up to 40GHz n Linear MPA & HPA up to 43.5GHz
    n System in Package (SiP) nG  H25 High power up to 20GHz
    n Linear High Power Amplifier n V & E-Band: MPA, LNA, Mixer
    n GH50 Power bar 50V to 6GHz
    n Very Low Noise Amplifier n Switches up to 26GHz
    n Fast & high isolation Switch GaAs n Power detector up to 44GHz
    n SWaP-C* technology mix n PPH15X Power up to 48GHz
    GaAs/GaN for MIMO n PH10 Low Noise up to 100GHz
    n PH15 Medium Power & Low
    Noise up to 90GHz
    n ULRC passive process
    Package
    n QFN from 3x3mm to 8x8mm
    n MSL 1, 2, 3
    n SiP / BGA

    SiP Front-End in QFN


    * Best in class SWaP-C : Size
    175GHz
    Weight & Power-Cost
    80GHz
    Hz
    60G
    z
    2GH
    4
    z
    GH
    39
    Hz
    28G
    Hz
    3.5GHz 6G

    Build your own solution with UMS


    www.ums-rf.com
    Building blocks for your projects
    BUILDING BLOCKS FOR SUB 6GHZ (FR1)
    MPA Freq (GHz) Gain (dB) IP3 (dBm) OP1dB (dBm) HPA Freq (GHz) Gain (dB) IP3 (dBm) Psat (dBm)

    CHA4220-QGG 0.5-20 17 28 20 CHA6652-QXG 21-27.5 20 41 33


    CHA4105-QDG 2-4 23 - 24 CHA6653-QXG 27-33.5 20 38 33
    CHA3024-QGG 2-22 15 28 18
    DOWN-CONVERTER Freq (GHz) Conv. Gain (dB) NF (dB) IP1dB

    GaN Internally CHR2295-99F 24-30 11 3.5 -10


    small signal
    matched / PAE % @ Freq
    Freq (GHz) Gain (dB) @ Power(W)
    unmatched (GHz)
    transistors
    freq (GHz)
    BUILDING BLOCKS FOR 37-43.5GHZ (FR2)
    CHK015AaQIA Up to 6 13@6 15 50@6 LNA Freq (GHz) Gain (dB) NF (dB) OP1dB (dBm)
    CHK8101a99F Up to 6 14@6 20 60@6
    CHA2595-QDG 27.5-43.5 19.5 2.3 11
    CHK9013-99F Up to 8 18@6 88 65@6
    CHA2494-QEG 34-44 22 3 12
    CHZ8012-QJA 2.6-3.4 16.5 12 54
    CHZ9012-QFA 2.7-3.4 16 65 55 MPA Freq (GHz) Gain (dB) IP3 (dBm) P-1dB (dBm)

    CHA3409-98F 25-45 23 26 19
    BUILDING BLOCKS FOR 6-8GHZ CHA3397-QDG 36-40.5 21 29 18
    CHA3398-QDG 36-43.5 22 29 18
    HPA Freq (GHz) Gain (dB) IP3 (dBm) Psat (dBm)

    CHA7060-QWA 5.7-8.5 20 46 40
    HPA Freq (GHz) Gain (dB) IP3 (dBm) Psat (dBm)

    LNA Freq (GHz) Gain (dB) IP3 (dBm) OP1dB (dBm) CHA5659-QXG 36-43.5 20 38.5 30
    CHA6194-QXG 37-40 20 38 31
    CHA3656-QAG 6-17 20 24 14

    UMS 2020 - Printed on PEFC paper - Smith Corporate : 01 69 59 11 30 - www.smithcorporate.fr


    MPA Freq (GHz) Gain (dB) IP3 (dBm) OP1dB (dBm)
    BUILDING BLOCKS FOR Q/V BAND
    CHA4350-QDG 5.5-11.7 26 32 24
    LNA Freq (GHz) Gain (dB) NF (dB) OP1dB (dBm)
    GaN Power Gain (dB) @ PAE % @ Freq CHA2159-99F 55-65 20 4 14
    Freq (GHz) Power (W)
    transistors Freq (GHz) (GHz)
    CHA2157-99F 55*-60 20 3.5 15
    CHK8013-99F Up to 10 17@6 14 70@6
    (*) tunable over 47-48GHz with narrow band impedance matching on PCB

    BUILDING BLOCKS FOR 24-30GHZ (FR2) Mixer Freq (GHz) Freq LO (GHz) Conv gain (dB) IP1dB (dBm)

    Gain RX/ Pout RX/ CHM1294-99F 25-35 11-19 -11 0


    NF RX
    RF Front End Freq (GHz) Gain TX Pout Tx CHM1298-99F 55-65 27.5-32.5 -12 0
    (dB)
    (dB) (dBm)

    CHC6053-QQA 24.25-30.5 18 / 33 10/32.5 3.5


    BUILDING BLOCKS FOR E-BAND
    LNA Freq (GHz) Gain (dB) NF (dB) OP1dB (dBm)
    LNA Freq (GHz) Gain (dB) NF (dB) OP1dB (dBm)
    CHA3688aQDG 12.5-30 26 2 14
    CHA2080-98F 71-86 22 3.5 10
    CHA2069-QDG 18-31 20 3 10.5
    CHA2362-98F 26-40 22 2 9
    MPA Freq (GHz) Gain (dB) IP3 (dBm) OP1dB (dBm)

    CHA3080-98F 71-76 16 25 19
    MPA Freq (GHz) Gain (dB) IP3 (dBm) OP1dB (dBm)
    CHA3090-98F 81-86 13 23 17
    CHA3395-QDG 21-30 24 32 20
    CHA3409-98F 25-45 23 26 19
    Mixer Freq (GHz) Freq LO (GHz) Conv gain (dB) IP1dB (dBm)
    CHA3396-QDG 27-33.5 22 30 19
    CHM1080-98F 71-86 34.5-44 -11 10

    Dyn. CHR1080a98F 71-86 34.5-44 8 -10


    Power Detector Freq (GHz) Loss (dB) Range(dB) Type

    CHE1260-QAG 10-27 1 30 Bidirection


    Additional building blocks on www.ums-rf.com
    CHE1270-QAG 10-44 - 30 Wideband

    UMS SAS – EMEA, UMS USA, Inc. - America, UMS - Asia,


    Ph: +33 1 69 86 32 00 Ph: +1 781 791 5078 Ph: +86 21 6103 1703
    mktsales@ums-rf.com philippe.labasse@ums-rf.com xavier.taltasse@ums-rf.com

    www.ums-rf.com Worldwide distributor: Richardson RFPD - www.richardsonrfpd.com

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