Transistors

2SC1518
Silicon NPN epitaxial planar type

For high-frequency bias oscillation of tape recorders Unit: mm

5.9±0.2 4.9±0.2
For DC-DC converter

8.6±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
0.7±0.1
• Satisfactory operation performances and high efficiency with a low-

0.7+0.3
–0.2
voltage power supply

13.5±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 25 V 0.45+0.2 0.45+0.2
–0.1
–0.1

Collector-emitter voltage (Base open) VCEO 20 V (1.27) (1.27)

1: Emitter
Emitter-base voltage (Collector open) VEBO 5 V 2: Collector

(3.2)
1 2 3
Collector current IC 1 A 3: Base
2.54±0.15 EIAJ: SC-51
Peak collector current ICP 1.5 A TO-92L-A1 Package
Collector power dissipation PC 1 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 25 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 100 nA
Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0 1 µA
Forward current transfer ratio hFE1 * VCE = 2 V, IC = 500 mA 90 330 
hFE2 VCE = 2 V, IC = 1 A 50 100 
Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 50 mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 1.2 V
Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 150 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 12 20 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
hFE1 90 to 155 130 to 220 185 to 330

Publication date: November 2002 SJC00107BED 1

2SC1518

PC  Ta IC  VCE VCE(sat)  IC
1.2 1.2 100
IC / IB = 20

Collector-emitter saturation voltage VCE(sat) (V)

Ta = 25°C
Collector power dissipation PC (W)

1.0 1.0
10
IB = 5.0 mA

Collector current IC (A)

0.8 0.8 4.5 mA
4.0 mA
3.5 mA
0.6 0.6 1
3.0 mA
Ta = 75°C
2.5 mA
0.4 0.4 2.0 mA 25°C
1.5 mA −25°C
0.1
0.2 0.2 1.0 mA
0.5 mA

0 0 0.01
0 40 80 120 160 0 2 4 6 8 10 0.01 0.1 1 10
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A)

IC  I B VBE(sat)  IC IC  VBE(sat)
1.0 VCE = 2 V 100 1.6
IC / IB = 10
Ta = 25°C Ta = 25°C
Base-emitter saturation voltage VBE(sat) (V)

1.4
0.8
10 1.2
Collector current IC (A)

Collector current IC (A)

IC / IB = 20 10
1.0
0.6
25°C Ta = −25°C
1 0.8
75°C
0.4
0.6

0.1 0.4
0.2
0.2

0 0.01 0
0 1 2 3 4 5 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA) Collector current IC (A) Base-emitter saturation voltage VBE(sat) (V)

hFE  IC fT  I E Cob  VCB

600 200 VCB = 10 V 50
C (pF)

VCE = 2 V IE = 0
Ta = 25°C
180 f = 1 MHz
(Common base, input open circuited) ob

500 Ta = 25°C
Forward current transfer ratio hFE

Transition frequency fT (MHz)

160 40

140
400
120 30
Collector output capacitance

Ta = 75°C
300 100
25°C
−25°C 80 20
200
60

40 10
100
20

0 0 0
0.01 0.1 1 10 −1 −10 −100 1 10 100
Collector current IC (A) Emitter current IE (mA) Collector-base voltage VCB (V)

2 SJC00107BED
 2SC1518

ICBO  Ta ICEO  Ta Safe operation area

104 105 10
VCB = 25 V VCE = 20 V Single pulse
Ta = 25°C

104
103 ICP

Collector current IC (A)

1

ICEO (Ta = 25°C)

ICBO (Ta = 25°C)

IC
103

ICEO (Ta)
ICBO (Ta)

t = 50 ms
102
DC
102
0.1
10
10

1 1 0.01
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 0.1 1 10 100
Ambient temperature Ta (°C) Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

SJC00107BED 3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
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electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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• Any applications other than the standard applications intended.
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL