5.

BJT CHARACTERISTICS
Abhishek Mourya
RA1911004010350
ECE-F
OBJECTIVE
To study the input and output characteristics of a bipolar junction transistor in Common
Emitter configuration and to measure h-parameters

APPRATUS REQUIRED

SNo APPRATUS TYPE RANGE QUANTITY

1 Transistor BC147 1
2 Resistance 1k ohm, 10% 2
Tolerence, ½
Watt Rating
3 RPS (0-30V), 2A 2
Rating
4 Ammeter MC (1-30)mA, (0- 1
500) uA
5 Voltmeter MC (0-1)V, (0- 1
30)V
6 Breadboard and wires
PRELAB QUESTIONS
TINKERCAD CIRCUITS
 OBSERVATION

INPUT CHARACTERISTICS
I.) Vce = 0

Vbe(mV) Ib(uA)
200 0
400 0
582 18.4
638 162
657 343
669 531
677 723
683 917
688 1011
692 1311
696 1500
II.) Vce=5V

Vbe(mV) Ib(uA)
200 0
400 0
599 0
676 124
683 317
688 512
692 708
696 904
699 1100
702 1300
704 1500

OUTPUT CHARACTERISTICS
I.) Ib=18.4 uA

Vce Ic
0.0284 0
0.712 288
1.71 288
2.71 288
3.71 288
4.71 288
5.71 288
6.71 288
7.71 288
8.71 288
9.71 288

II.) Ib=162 uA

Vce Ic
 3.27 0
18.9 0.981
30.1 1.97
38.9 2.96
46.2 3.95
52.5 4.95
58.2 5.94
63.4 6.94
68.2 7.93
72.8 8.93
77.1 9.92

GRAPHS

MODEL GRAPHS

OBSERVATION GRAPH

INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
RESULT:
The input and output characteristics of BJT in CE configuration was verified and the graph was plotted