Clear and neat answers are worthy!!!

Name: …………………………………………………….. ID NO: ……………………Section…………...

1. Write down the comparison between BJT and FET (at least two). [2pt]
2. Explain common collector input characteristics and find the parameters for common
collector characteristics (input impedance, output impedance, voltage gain, current
gain). [5p]
3. a) Find V BC and state the region of operation if V BE =0.75 V and V CE =−3 V [2pt]

b) Find IE, β and α, for IC=3mA and IB=30µA. [3pt]

4. For the voltage divider bias configuration given in the figure below, determine. [7pt]
a. I C VCC

b. V CC
c. V E
d. V CE
e. V B R1 RC 2.7k
f. R1 20uA 1 0 .6 V
B = 10 0
VB
VE
R2 6.8k RE 1.2k

5. For the network of figure below [8pt]

a. Determine r e VCC=12V
b. Find Zi
c. Calculate Z o (r 0 =∞)
d. Determine A v ( r 0=∞ )
e. Repeat parts (c) & (d) r 0 =50 KΩ Io
R2 470k RC 3k
C2
Vo
C1
10uF
Vi
10uF B = 10 0
ro=50k Zo
Zi
 Clear and neat answers are worthy!!!

6. For the JFET amplifier network in the figure given below with the parameters I DSS =12 mA ,
V p=−4 V ∧¿ y os =40 µS . Determine [10pt]
a. IDQ and VGSQ
b. r d
c. Zi 20V
d. Z o
Vo
e. A v=
Vi R1 RD 2.7 k C2
420 k
C1 Vo

RL
4k
7. For the
Vi R2 Rs Cs
combination network 180 k 2.7 k Zo
of Fig. given below, Zi
determine. [9pt]

16V
a. VB and VG.
b. VE.
c. IE, IC, ID and IB.
2.2k
d. VC, VS, and VD
40k
ID
e. VCE. VD
VG=VB ID S S = 6 m A
f. VDS.
Vp=-6V
IB
IC

B = 10 0
10k IE

1.2k