IRLB8314PbF

HEXFET® Power MOSFET

Application
 Optimized for UPS/Inverter Applications VDSS 30 V
D
 Low Voltage Power Tools RDS(on) max
2.4
G (@ VGS = 10V) m
(@ VGS = 4.5V) 3.2
S
Benefits Qg (typical) 40 nC
 Best in Class Performance for UPS/Inverter Applications ID (Silicon Limited) 171
 Very Low RDS(on) at 4.5V VGS A
ID (Package Limited) 130A
 Ultra-Low Gate Impedance
 Fully Characterized Avalanche Voltage and Current
 Lead-Free, RoHS Compliant

S
D
G
TO-220Pak

G D S
Gate Drain Source

Standard Pack Orderable Part Number

Base part number Package Type
Form Quantity
IRLB8314PbF TO-220Pak Tube 50 IRLB8314PbF

Absolute Maximium Rating

Symbol Parameter Max. Units
VGS Gate-to-Source Voltage ± 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 171 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 130
IDM Pulsed Drain Current  664
PD @TC = 25°C Maximum Power Dissipation 125 W
PD @TC = 100°C Maximum Power Dissipation 63 W
Linear Derating Factor 0.83 W/°C
TJ Operating Junction and
-55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 1.2
RCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
RJA Junction-to-Ambient ––– 62

Notes  through  are on page 8

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 IRLB8314PbF

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 14 ––– mV/°C Reference to 25°C, ID = 1mA 
RDS(on) Static Drain-to-Source On-Resistance ––– 1.9 2.4 m VGS = 10V, ID = 68A 
––– 2.6 3.2 VGS = 4.5V, ID = 68A 
VGS(th) Gate Threshold Voltage 1.2 1.7 2.2 V VDS = VGS, ID = 100µA
VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C
––– ––– 1.0 VDS =24 V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 150 VDS =24V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 307 ––– ––– S VDS = 15V, ID =68A
Qg Total Gate Charge ––– 40 60
Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.8 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 13 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 8.7 ––– ID = 68A
Qgodr Gate Charge Overdrive ––– 11.5 –––
Qsw Switch Charge (Qgs2 + Qgd) 21.7
RG Gate Resistance ––– 1.7 ––– 
td(on) Turn-On Delay Time ––– 19 ––– VDD = 15V
tr Rise Time ––– 142 ––– ns ID = 68A
td(off) Turn-Off Delay Time ––– 32 ––– RG= 1.8
tf Fall Time ––– 72 ––– VGS = 4.5V
Ciss Input Capacitance ––– 5050 ––– VGS = 0V
Coss Output Capacitance ––– 890 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 500 ––– ƒ = 1.0MHz

Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy  180
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value  900
IAR Avalanche Current  68 A
EAR Repetitive Avalanche Energy  12.5 mJ

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 171
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 664
(Body Diode)  p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C,IS = 68A,VGS = 0V 
trr Reverse Recovery Time ––– 21 31 ns TJ = 25°C IF = 68A ,VDD=15V
Qrr Reverse Recovery Charge ––– 54 81 nC di/dt = 430A/µs 

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1000 1000
VGS VGS
TOP 10V TOP 10V
ID, Drain-to-Source Current (A) 5.5V 5.5V

ID, Drain-to-Source Current (A)

4.5V 4.5V
4.0V 4.0V
3.5V 3.5V
3.3V 3.3V
3.0V 3.0V
BOTTOM 2.8V BOTTOM 2.8V

100 100

2.8V

2.8V
 60µs PULSE WIDTH  60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
10 10
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics
1000 1.8

ID = 120A

RDS(on) , Drain-to-Source On Resistance

1.6 VGS = 10V
ID, Drain-to-Source Current (A)

100
T J = 175°C
1.4
(Normalized)

10 1.2
T J = 25°C

1.0
1

VDS = 15V 0.8

 60µs PULSE WIDTH
0.1
0.6
1.0 2.0 3.0 4.0 5.0 6.0 7.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

100000 14
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORT ED
ID = 68A VDS= 24V
C rss = C gd
12
VDS= 15V
VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd
10
C, Capacitance (pF)

10000
C iss 8

6
C oss

1000 4
C rss

0
100 0 20 40 60 80 100 120
0.1 1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

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1000 1000

100µsec

ID, Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

100 T J = 175°C 100

1msec
Limited by
Package
10 10

OPERATION IN THIS AREA

T J = 25°C LIMITED BY R (on)
DS
1 1 10msec
Tc = 25°C DC
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100

VSD , Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
180 2.5

160 Limited By Package

VGS(th) Gate threshold Voltage (V)

140 2.0
ID, Drain Current (A)

120

100
1.5
80 ID = 100µA
ID = 250µA
60 ID = 1.0mA
1.0
40

20
0.5
0
-75 -50 -25 0 25 50 75 100 125 150 175
25 50 75 100 125 150 175
T C , Case Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature

10
Thermal Response ( Z thJC ) °C/W

1
D = 0.50

0.20
0.1 0.10
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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800

RDS(on), Drain-to -Source On Resistance ( m )

10
I D

EAS, Single Pulse Avalanche Energy (mJ)

ID = 86A
T OP 14A
30A
8 600 BOTT OM 68A

6
400

4 T J = 125°C

200
2
T J = 25°C

0 0
2 6 10 14 18 25 50 75 100 125 150 175

VGS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature (°C)

Fig 12. Typical On-Resistance vs. Gate Voltage Fig 14. Maximum Avalanche Energy vs. Drain Current

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Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

V (B R )D S S

15V
tp

L D R IV E R
VDS

RG D .U .T +
VD D
-
IA S A
20V
tp 0 .0 1  IAS

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms
Id
Vds

Vgs

V g s (th )

Q gs1 Q gs2 Q gd Q godr

Fig 21a. Gate Charge Test Circuit Fig 21b. Gate Charge Waveform

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TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAM PLE: T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789 IN T E R N A T IO N A L PART N UM BER
ASSEM BLED O N W W 19, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "C " LO G O
D ATE C O D E
N o t e : "P " in a s s e m b ly lin e p o s it io n YEAR 0 = 2000
ASSEM BLY
in d ic a t e s "L e a d - F r e e " LO T C O D E W EEK 19
L IN E C

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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 IRLB8314PbF

Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-220 N/A
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.067mH, RG = 50, IAS = 68A, VGS =10V.
 Pulse width  400µs; duty cycle  2%.
 R is measured at TJ approximately 90°C.
 This value determined from sample failure population, starting T J =25°C,
L=0.5mH, RG = 50, IAS =60A, VGS =10V.
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is
130A. Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140).

IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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