MDU1512 – Single N-Channel Trench MOSFET 30V

MDU1512
Single N-channel Trench MOSFET 30V, 100.0A, 3.4mΩ

General Description Features

The MDU1512 uses advanced MagnaChip’s MOSFET  VDS = 30V
Technology, which provides high performance in on-state  ID = 100.0A @VGS = 10V
resistance, fast switching performance and excellent  RDS(ON) (MAX)
quality. MDU1512 is suitable device for DC to DC < 3.4mΩ @VGS = 10V
converter and general purpose applications. < 5.0mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested

D
D D D D D D D D

G
S S S G G S S S

PowerDFN56
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C 64
o
TC=70 C 86.3
Continuous Drain Current (1) ID A
o
TA=25 C 30.4(3)
TA=70oC 24.2(3)
Pulsed Drain Current IDM 256 A
o
TC=25 C 69.4
o
TC=70 C 44.4
Power Dissipation PD W
o
TA=25 C 5.5(3)

TA=70oC 3.5(3)
Single Pulse Avalanche Energy (2) EAS 136 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

(1)
Thermal Resistance, Junction-to-Ambient Steady State RθJA 22.7 o
C/W
Thermal Resistance, Junction-to-Case Steady State RθJC 1.8

Apr. 2016. Version 1.5 1 MagnaChip Semiconductor Ltd.

 MDU1512 – Single N-Channel Trench MOSFET 30V
Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

MDU1512RH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free

Electrical Characteristics (TJ = 25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7
VDS = 30V, VGS = 0V - - 1
Drain Cut-Off Current IDSS o
TJ=55 C - - 5 μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 24A - 3.0 3.4
o
Drain-Source ON Resistance RDS(ON) TJ=125 C - 4.4 4.9 mΩ
VGS = 4.5V, ID = 20A - 4.2 5.0
Forward Transconductance gfs VDS = 5V, ID = 10A - 42 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 26.5 35.3 44.1
Total Gate Charge Qg(4.5V) VDS = 15V, ID = 24A, 12.6 16.8 21.0
nC
Gate-Source Charge Qgs VGS = 10V - 7.0 -
Gate-Drain Charge Qgd - 5.4 -
Input Capacitance Ciss 1615 2153 2691
VDS = 15V, VGS = 0V,
Reverse Transfer Capacitance Crss 157 209 261 pF
f = 1.0MHz
Output Capacitance Coss 337 449 561
Turn-On Delay Time td(on) - 12.2 -
Rise Time tr VGS = 10V, VDS = 15V, - 12.2 -
ns
Turn-Off Delay Time td(off) ID = 24A, RG = 3.0Ω - 39.4 -
Fall Time tf - 10.3 -
Gate Resistance Rg f=1 MHz - 1.0 2.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 24A, VGS = 0V - 0.8 1.1 V
Body Diode Reverse Recovery Time trr - 29.1 43.7 ns
IF = 24A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 21.2 31.8 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS =.29.0A, VDD = 27V, VGS = 10V.
3. T < 10sec.

Apr. 2016. Version 1.5 2 MagnaChip Semiconductor Ltd.

 MDU1512 – Single N-Channel Trench MOSFET 30V
50 8
VGS = 10V
3.5V

Drain-Source On-Resistance [mΩ]

4.0V
40
4.5V
ID, Drain Current [A]

30 VGS = 4.5V

4
VGS = 10V
20

3.0V 2
10

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 100

※ Notes : ※ Notes :
1. VGS = 10 V ID = 24.0A
1.6 2. ID = 20.0 A
Drain-Source On-Resistance

80
Drain-Source On-Resistance
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ],

60

1.2

40
1.0

20
0.8
TA = 25 ℃

0.6 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10

TJ, Junction Temperature [ C]

o VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

18 100
TA=25
※ Notes :
℃

VDS = 5V
15
ID, Drain Current [A]

12 10

25
-IS [A]

9 ℃

6 1

0 0.1
0 1 2 3 4 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VGS, Gate-Source Voltage [V] -VSD [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Apr. 2016. Version 1.5 3 MagnaChip Semiconductor Ltd.

 MDU1512 – Single N-Channel Trench MOSFET 30V
10 3000
※ Note : ID = 24A Ciss = Cgs + Cgd (Cds = shorted)
VDS = 15V Coss = Cds + Cgd
2500 Crss = Cgd
8 Ciss
VGS, Gate-Source Voltage [V]

2000

Capacitance [pF]
6

1500

4
1000 ※ Notes ;
Coss 1. VGS = 0 V
2. f = 1 MHz
2
500 Crss

0 0
0 4 8 12 16 20 24 28 32 36 40 0 5 10 15 20 25 30

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3
10
Operation in This Area
is Limited by R DS(on) 100
1 ms

2
10 ms
10
80
100 ms
ID, Drain Current [A]

ID, Drain Current [A]

1s
10s
Limited by Package
DC 60
1
10

40

0
10
20
Single Pulse
TJ=Max rated
TC=25 ℃

-1
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] ℃

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

1 1
10 10
ZJC(t), Thermal Response

ZJA(t), Thermal Response

D=0.5 0
0
10 10
D=0.5
0.2
0.2
0.1
0.05 0.1
-1 -1
10 10
0.05
0.02
0.02

-2
0.01 -2 0.01 * Notes :
10 ※ Notes : 10
Duty Factor, D=t 1/t2 single pulse Duty Factor, D=t1/t2
PEAK TJ = PDM * ZJC * RJC(t) + TC PEAK TJ = PDM * ZJA * RJA(t) + TA
single pulse

-3
10
-3 10
-4 -3 -2 -1 0 1 2 3
10
-4 -3
10 10
-2 -1
10 10
0 1
10 10
2
10
3 10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec] t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Fig.12 Transient Thermal Response

Curve (Junction-to-Case) Curve (Junction-to-Ambient)

Apr. 2016. Version 1.5 4 MagnaChip Semiconductor Ltd.

 MDU1512 – Single N-Channel Trench MOSFET 30V
Package Dimension

PDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified

MILLIMETERS
Dimension
Min Max
A 0.90 1.10
b 0.33 0.51
C 0.20 0.34
D1 4.50 5.10

D2 - 4.22

E 5.90 6.30
E1 5.50 6.10
E2 - 4.30
e 1.27BSC
H 0.41 0.71
K 0.20 -
L 0.51 0.71

α 0° 12°

Apr. 2016. Version 1.5 5 MagnaChip Semiconductor Ltd.

 MDU1512 – Single N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Apr. 2016. Version 1.5 6 MagnaChip Semiconductor Ltd.